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    17N80C3 Price and Stock

    Infineon Technologies AG SPP17N80C3XKSA1

    MOSFET N-CH 800V 17A TO220-3
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    Infineon Technologies AG SPB17N80C3ATMA1

    MOSFET N-CH 800V 17A TO263-3
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    DigiKey SPB17N80C3ATMA1 Digi-Reel 1,725 1
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    Mouser Electronics SPB17N80C3ATMA1 4,301
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    New Advantage Corporation SPB17N80C3ATMA1 78,000 1
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    Infineon Technologies AG SPW17N80C3FKSA1

    MOSFET N-CH 800V 17A TO247-3
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    DigiKey SPW17N80C3FKSA1 Tube 369 1
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    Rochester Electronics SPW17N80C3FKSA1 10,328 1
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    Infineon Technologies AG SPA17N80C3XKSA1

    MOSFET N-CH 800V 17A TO220-3
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    DigiKey SPA17N80C3XKSA1 Tube 165 1
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    Mouser Electronics SPA17N80C3XKSA1 514
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    Infineon Technologies AG SPW17N80C3A

    MOSFET N-CH 800V 17A TO247-3
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    DigiKey SPW17N80C3A Tube 240
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    17N80C3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    17N80C3

    Abstract: 17n80c 17n80 SPP17N80C3 SPB17N80C3
    Text: 17N80C3 17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature New revolutionary high voltage technology Product Summary  Worldwide best R DS on in TO 220 VDS 800 V  Ultra low gate charge RDS(on) 290 m Periodic avalanche rated


    Original     		SPP17N80C3 SPB17N80C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4353 17N80C3 17N80C3 17n80c 17n80 SPP17N80C3 SPB17N80C3 PDF

    17n80c3

    Abstract: SPA17 17n80
    Text: 17N80C3 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220-3-1 • Periodic avalanche rated


    Original     		SPP17N80C3 SPA17N80C3 PG-TO-220-3-31: P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 SPA17N80C3 17N80C3 17N80C3 SPA17 17n80 PDF

    17n80c3

    Abstract: 17n80 spa17n80c3 17N80C SPB17N80C3 UJ14 Q67040-S4441
    Text: Final data 17N80C3, 17N80C3 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 • Ultra low gate charge P-TO220-3-31 VDS 800 V RDS(on) 0.29 Ω ID 17 A P-TO263-3-2 P-TO220-3-1


    Original     		SPP17N80C3, SPB17N80C3 SPA17N80C3 P-TO-220-3-31: SPP17N80C3 SPA17N80C3 P-TO220-3-1 P-TO263-3-2 Q67040-S4353 17n80c3 17n80 17N80C UJ14 Q67040-S4441 PDF

    MOSFET 17N80c3

    Abstract: 17n80
    Text: 17N80C3 CoolMOS Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPP17N80C3 PG-TO220-3 17N80C3 MOSFET 17N80c3 17n80 PDF

    MOSFET 17N80c3

    Abstract: smd transistor marking d10 17n80c3 17N80C3 mosfet SPB17N80C3 640 smd transistor marking smd G47
    Text: 17N80C3 CoolMOS Power Transistor Product Summary Features • new revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 91 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPB17N80C3 PG-TO263 17N80C3 MOSFET 17N80c3 smd transistor marking d10 17n80c3 17N80C3 mosfet SPB17N80C3 640 smd transistor marking smd G47 PDF

    Untitled

    Abstract: No abstract text available
    Text: 17N80C3 CoolMOS Power Transistor Product Summary Features • new revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 91 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPB17N80C3 PG-TO263 17N80C3 PDF

    17n80

    Abstract: 17n80c3 Q67040-S4359 to247 f SPW17N80C3 17n80c
    Text: 17N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 800 V RDS(on) 0.29 Ω ID 17 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPW17N80C3 P-TO247 Q67040-S4359 17N80C3 17n80 17n80c3 Q67040-S4359 to247 f SPW17N80C3 17n80c PDF

    17N80C3

    Abstract: SPP17N80C3 17n80 17n80c SPB17N80C3
    Text: 17N80C3 17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 800 V RDS(on) 290 mΩ


    Original     		SPP17N80C3 SPB17N80C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4353 17N80C3 17N80C3 SPP17N80C3 17n80 17n80c SPB17N80C3 PDF

    17n80

    Abstract: 17n80c SPW17N80C3A 17N80C3
    Text: 17N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 800 V RDS(on) 0.29 Ω ID 17 A P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPW17N80C3 P-TO247 Q67040-S4359 17N80C3 17n80 17n80c SPW17N80C3A 17N80C3 PDF

    17n80c3

    Abstract: 17n80 Q67040-s4354 17n80c Q67040-S4441 Q67040-S4353 spa17n80c3
    Text: Preliminary data 17N80C3, 17N80C3 17N80C3 Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge ID • Periodic avalanche rated


    Original     		SPP17N80C3, SPB17N80C3 SPA17N80C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP17N80C3 17n80c3 17n80 Q67040-s4354 17n80c Q67040-S4441 Q67040-S4353 spa17n80c3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPB17N80C3 PG-TO263 SPB17N80C3 Q67040-S4354 17N80C3 PDF

    17N80C3

    Abstract: No abstract text available
    Text: 17N80C3 17N80C3 Cool MOS Power Transistor Feature VDS 800 V RDS on 0.29 Ω ID 17 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 PG-TO220-3-31 PG-TO220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPP17N80C3 SPA17N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4353 17N80C3 17N80C3 PDF

    17n80c3

    Abstract: No abstract text available
    Text: 17N80C3 CoolMOS Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPP17N80C3 PG-TO220-3 17N80C3 17n80c3 PDF

    17n80c3

    Abstract: UJ14
    Text: 17N80C3 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPP17N80C3 SPA17N80C3 PG-TO-220-3-31: P-TO220-3-31 PG-TO220-3-31 PG-TO220 SPA17N80C3 Q67040-S4353 17n80c3 UJ14 PDF

    SPW17N80C3 INFINEON

    Abstract: SPW17N80C3 17n80c
    Text: 17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 247 • Ultra low gate charge VDS 800 V RDS(on) 0.29 Ω •=Periodic avalanche rated


    Original     		SPW17N80C3 P-TO247 Q67040-S4359 17N80C3 SPW17N80C3 INFINEON SPW17N80C3 17n80c PDF

    17n80

    Abstract: No abstract text available
    Text: 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 800 V RDS(on) 0.29 Ω ID 17 A PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type


    Original     		SPW17N80C3 PG-TO247 SPW17N80C3 Q67040-S4359 17N80C3 17n80 PDF

    MOSFET 17N80c3

    Abstract: 17n80c3 17n80c 17n80 JESD22 SPW17N80C3
    Text: 17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPW17N80C3 PG-TO247-3 17N80C3 MOSFET 17N80c3 17n80c3 17n80c 17n80 JESD22 SPW17N80C3 PDF

    17n80c3

    Abstract: No abstract text available
    Text: Final data 17N80C3, 17N80C3 17N80C3 Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge ID • Periodic avalanche rated


    Original     		SPP17N80C3, SPB17N80C3 SPA17N80C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP17N80C3 Q67040-S4353 17n80c3 PDF

    MOSFET 17N80c3

    Abstract: Diode S17 DS800 PG-TO-247-3 SPW17N80C3 17n80c
    Text: 17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPW17N80C3 PG-TO247-3 17N80C3 MOSFET 17N80c3 Diode S17 DS800 PG-TO-247-3 SPW17N80C3 17n80c PDF

    17n80c3

    Abstract: 17n80 SPA17N80C3 17n80c diode 400V 4A TO220 HEATSINK DATASHEET PG-TO220 SMD BR 17 PG-TO220-3-31 SPP17N80C3
    Text: 17N80C3 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPP17N80C3 SPA17N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4353 17N80C3 17n80c3 17n80 SPA17N80C3 17n80c diode 400V 4A TO220 HEATSINK DATASHEET PG-TO220 SMD BR 17 SPP17N80C3 PDF

    MOSFET 17N80c3

    Abstract: 17n80 17n80c3 17n80c MOSFET 17N80c3 Data sheet JESD22 SPW17N80C3 spw17n80 PG-TO247-3
    Text: 17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPW17N80C3 PG-TO247-3 17N80C3 009-134-A O-247 PG-TO247-3 MOSFET 17N80c3 17n80 17n80c3 17n80c MOSFET 17N80c3 Data sheet JESD22 SPW17N80C3 spw17n80 PDF

    spa17n80c3

    Abstract: 17n80c3
    Text: 17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 800 V RDS(on) 0.29 Ω •=Periodic avalanche rated


    Original     		SPA17N80C3 P-TO220-3-31 17N80C3 P-TO220-3-31 Q67040-S4441 spa17n80c3 17n80c3 PDF

    17n80c3

    Abstract: No abstract text available
    Text: 17N80C3 17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 800 V RDS(on) 0.29 Ω


    Original     		SPP17N80C3 SPB17N80C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4353 Q67040-S4354 17n80c3 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF