QPP-211
Abstract: No abstract text available
Text: QPP-211 120W, 1805-1880MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-211 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for cellular base stations. The
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QPP-211
1805-1880MHz
QPP-211
H10537)
H10894)
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QPP-212
Abstract: 328-01
Text: QPP-212 120W, 1805-1880MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-212 QuikPAC RF power module is a Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for cellular base stations. The power transistors are
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QPP-212
1805-1880MHz
QPP-212
H10537)
H10894)
328-01
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1800 ldmos
Abstract: MAPLST1819-090CF MAPLST1820-090CF
Text: RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 90W, 26V 5/14/04 MAPLST1820-090CF Preliminary Package Style Features Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier
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MAPLST1820-090CF
1805-1880MHz
1930-1990MHz
1880MHz,
900mA:
P-240
MAPLST1819-090CF
1800 ldmos
MAPLST1819-090CF
MAPLST1820-090CF
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1800 ldmos
Abstract: electrolytic capacitor 470 P-237 MAPLST1820-030CF component of 30w amplifier
Text: RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 30W, 26V 5/14/04 MAPLST1820-030CF Preliminary Package Style Features Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier
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MAPLST1820-030CF
1805-1880MHz
1930-1990MHz
1900MHz)
P-237
1800 ldmos
electrolytic capacitor 470
P-237
MAPLST1820-030CF
component of 30w amplifier
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Untitled
Abstract: No abstract text available
Text: RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 60W, 26V 5/14/04 MAPLST1820-060CF Preliminary Package Style Features Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier
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MAPLST1820-060CF
1805-1880MHz
1930-1990MHz
1880MHz,
900mA:
P-238
MAPLST1819-060CF
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RF 207
Abstract: QPP-207 xemod
Text: QPP-207 25W, 1805-1880MHz Class AB Driver Stage Preliminary QuikPAC Module Data General description: Features: The QPP-207 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The
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QPP-207
1805-1880MHz
QPP-207
H10890)
RF 207
xemod
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1805-1880MHz 10w
Abstract: 1805-1880MHz power module 1805-1880mhz module
Text: XD010-22S 10W, 1805-1880MHz GSM/EDGE Driver Amplifier Preliminary QuikPAC Module Data General description: Features: The XD010-22S QuikPAC 10W power module is a 2-stage Class A/AB amplifier module for use in the driver stages of GSM/EDGE RF power amplifiers for cellular base stations. The
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XD010-22S
1805-1880MHz
H12048)
XD010-22S
EDS-102930
1805-1880MHz 10w
1805-1880MHz power module
1805-1880mhz module
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XD010-22S
Abstract: xemod
Text: XD010-22S 10W, 1805-1880MHz GSM/EDGE Driver Amplifier Advanced QuikPAC Module Data General description: Features: The XD010-22S QuikPAC 10W power module is a 2-stage Class A/AB amplifier module for use in the driver stages of GSM/EDGE RF power amplifiers for cellular base stations. The power transistors are
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XD010-22S
1805-1880MHz
XD010-22S
H12048)
xemod
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QPP-210
Abstract: No abstract text available
Text: QPP-210 60W, 1805-1880MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-210 QuikPAC RF power module is a Class AB amplifier stage designed for use in the driver and output stages of linear RF power amplifiers for cellular base stations. The power transistors are
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QPP-210
1805-1880MHz
QPP-210
H10537)
H10894)
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1800 ldmos
Abstract: MAPLST1819-060CF MAPLST1820-060CF
Text: RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 60W, 26V 5/24/04 MAPLST1820-060CF Preliminary Package Style Features Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier
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MAPLST1820-060CF
1805-1880MHz
1930-1990MHz
1880MHz,
900mA:
P-238
MAPLST1819-060CF
1800 ldmos
MAPLST1819-060CF
MAPLST1820-060CF
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QPP-208
Abstract: XEMOD 5W amplifier tone
Text: QPP-208 25W, 1805-1880MHz Class AB Driver Stage Preliminary QuikPAC Module Data General description: Features: The QPP-208 QuikPAC RF power module is a Class AB amplifier stage designed for use in the driver and output stages of linear RF power amplifiers for cellular base stations. The power
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QPP-208
1805-1880MHz
QPP-208
H10890)
XEMOD
5W amplifier tone
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XEMOD
Abstract: QPP-209 12.5W bypass transistor RF MODULE 1805-1880MHz power module
Text: QPP-209 60W; 1805-1880MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-209 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the driver or output stage of linear RF power amplifiers for cellular base stations.
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QPP-209
1805-1880MHz
QPP-209
H10537)
H10894)
XEMOD
12.5W bypass transistor
RF MODULE
1805-1880MHz power module
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UPF18030-095
Abstract: ultrarf 2200PF 470PF 47UF MMBTA64 MRF19030
Text: UPF18030-095 30W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers
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UPF18030-095
MRF19030
UPF18030-095
ultrarf
2200PF
470PF
47UF
MMBTA64
MRF19030
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SPB2026Z
Abstract: SPB-2026Z TL 188 TRANSISTOR PIN DIAGRAM SPB-2026
Text: Advanced Information SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is
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SPB-2026Z
10mil
EDS-105436
SPB-2026Z
SPB2026Z
TL 188 TRANSISTOR PIN DIAGRAM
SPB-2026
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Untitled
Abstract: No abstract text available
Text: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is
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SPB-2026Z
SPB-2026Z
10mil
EDS-105436
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SPB-2026Z
Abstract: SPB-2026 2W High Linearity Amplifier spb2026z
Text: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is
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SPB-2026Z
10mil
EDS-105436
SPB-2026Z
SPB-2026
2W High Linearity Amplifier
spb2026z
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Untitled
Abstract: No abstract text available
Text: Model X3DC18E2S Rev B Doherty Combiner b Description The X3DC18E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC18E2S is designed particularly for Doherty Amplifier applications, where tightly controlled phase and amplitude imbalance as
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X3DC18E2S
X3DC18E2S
20log
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X3DC18E2S
Abstract: No abstract text available
Text: Model X3DC18E2S Rev B PRELIMINARY Doherty Combiner b Description The X3DC18E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC18E2S is designed particularly for Doherty Amplifier
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X3DC18E2S
X3DC18E2S
RF-35,
RO4350
20log
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315 MHz Power Amplifier
Abstract: No abstract text available
Text: Model X3DC18E2S RevA Doherty Combiner b Description The X3DC18E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC18E2S is designed particularly for Doherty Amplifier applications, where tightly controlled phase and amplitude imbalance as
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X3DC18E2S
X3DC18E2S
RF-35,
RO4350
20log
315 MHz Power Amplifier
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SPB-2026
Abstract: zo 107 TL 188 TRANSISTOR PIN DIAGRAM SPB2026Z SPB-2026Z SPB2026 0722 ER39 SOF-26 ML200D
Text: SPB-2026Z Product Description 0.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is
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SPB-2026Z
SPB-2026Z
SOF-26
EDS-105436
SPB-2026
zo 107
TL 188 TRANSISTOR PIN DIAGRAM
SPB2026Z
SPB2026
0722
ER39
ML200D
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C17-C19
Abstract: ultrarf 10UF MMBTA64 MRF18060 UPF18060 240089
Text: UPF18060 60W, 1.88GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the frequency band 1805 to 1880 GHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers
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UPF18060
88GHz,
MRF18060
C17-C19
ultrarf
10UF
MMBTA64
MRF18060
UPF18060
240089
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Untitled
Abstract: No abstract text available
Text: PI1843AG-21H PI1843AG21H 1805MHz TO 1880MHz SINGLE JUNCTION DROP-IN ISOLATOR Package: Drop-in, 1inx1in Product Description Features The PI1843AG-21H is a small, low cost drop-in isolator designed for applications in high performance linear power amplifiers for wireless infrastructure base stations. These isolators feature a robust construction for high
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PI1843AG-21H
PI1843AG21H
1805MHz
1880MHz
PI1843AG-21H
-70dBc
DS100916
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Untitled
Abstract: No abstract text available
Text: PI1843AA-21H PI1843AA-21H 1805MHz to 1880MHz Single Junction Drop-In Isolator 1805MHZ TO 1880MHZ SINGLE JUNCTION DROP-IN ISOLATOR Package: Drop-in, 1inx1.25in Product Description Features The PI1843AA-21H is a low cost, drop-in isolator designed for applications in high
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PI1843AA-21H
1805MHz
1880MHz
PI1843AA-21H
DS090625
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Untitled
Abstract: No abstract text available
Text: PI1843AA-21H PI1843AA-21H 1805MHz to 1880MHz Single Junction Drop-In Isolator 1805MHZ TO 1880MHZ SINGLE JUNCTION DROP-IN ISOLATOR Package: Drop-in, 1inx1.25in Product Description Features The PI1843AA-21H is a low cost, drop-in isolator designed for applications in high
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PI1843AA-21H
1805MHz
1880MHz
PI1843AA-21H
-70IMD
25dBrward
DS100916
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