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    180N Search Results

    180N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NP180N04TUJ-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive, MP-25ZT, /Embossed Tape Visit Renesas Electronics Corporation
    NP180N04TUK-E1-AY Renesas Electronics Corporation Nch Single Power MOSFET 40V 180A 1.05mohm MP-25ZT/7pin TO-263 Automotive Visit Renesas Electronics Corporation
    NP180N04TUJ-E2-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP180N04TUG-E2-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP180N055TUK-E1-AY Renesas Electronics Corporation Nch Single Power MOSFET 55V 180A 1.4mohm MP-25ZT/7pin TO-263 Automotive Visit Renesas Electronics Corporation
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    180N Price and Stock

    Diodes Incorporated AH180N-ZG-7

    MAGNETIC SWITCH OMNIPOLAR SOT553
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    DigiKey AH180N-ZG-7 Cut Tape 74,424 1
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    AH180N-ZG-7 Digi-Reel 74,424 1
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    AH180N-ZG-7 Reel 72,000 3,000
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    Avnet Asia AH180N-ZG-7 8 Weeks 3,000
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    Avnet Silica AH180N-ZG-7 3,000 10 Weeks 3,000
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    New Advantage Corporation AH180N-ZG-7 3,000 1
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    Goford Semiconductor G180N06S2

    MOSFET 2N-CH 60V 8A 8SOP
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    DigiKey G180N06S2 Digi-Reel 3,990 1
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    G180N06S2 Cut Tape 3,990 1
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    Sumida Corporation CDRH6D38NP-180NC

    FIXED IND 18UH 1.5A 92 MOHM SMD
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    DigiKey CDRH6D38NP-180NC Cut Tape 3,954 1
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    CDRH6D38NP-180NC Digi-Reel 3,954 1
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    CDRH6D38NP-180NC Reel 3,000 1,000
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    CIT Relay & Switch LP2203F180NZA

    SWITCH PUSH DPDT 100MA 30VDC
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    DigiKey LP2203F180NZA Bag 1,000 1
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    Mueller Electric Company AI-50180N

    16-14 NYLON INSULATED .250 X 0.0
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    DigiKey AI-50180N Bag 829 1
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    Newark AI-50180N Bulk 1,000 1
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    RS AI-50180N Bulk 790 8 Weeks 1
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    Bisco Industries AI-50180N 1,000
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    180N Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    180NQ International Rectifier Schottky Rectifier Original PDF
    180NQ035 International Rectifier 35V 180A Schottky Discrete Diode in a D-67 HALF-Pak package Original PDF
    180NQ035 International Rectifier Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 35V 180A HALF-PAK Original PDF
    180NQ035 Microsemi Schottky Rectifier Scan PDF
    180NQ035 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    180NQ035-1 SMC Diode Solutions Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 35V 180A PRM1-1 Original PDF
    180NQ040 International Rectifier 40V 180A Schottky Discrete Diode in a D-67 HALF-Pak package Original PDF
    180NQ040 Microsemi Schottky Rectifier Scan PDF
    180NQ040 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    180NQ040-1 SMC Diode Solutions Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 40V 180A PRM1-1 Original PDF
    180NQ045 International Rectifier 45V 180A Schottky Discrete Diode in a D-67 HALF-Pak package Original PDF
    180NQ045 International Rectifier Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 45V 180A HALF-PAK Original PDF
    180NQ045 Microsemi Schottky Rectifier Scan PDF
    180NQ045 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    180NQ045-1 SMC Diode Solutions Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 45V 180A PRM1-1 Original PDF
    180NQ045R International Rectifier 45V 180A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package Original PDF
    180NQ045R International Rectifier Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 45V 180A HALF-PAK Original PDF
    180NQ045R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    180NQ... Series International Rectifier SCHOTTKY RECTIFIER 180 Amp Original PDF

    180N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    I 508 V

    Abstract: 180N15P IXTK180N15P
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXTK 180N15P VDSS ID25 = 150 V = 180 A Ω RDS on ≤ 11 mΩ N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V V VDSS VGSM Continuous


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    PDF 180N15P I 508 V 180N15P IXTK180N15P

    Untitled

    Abstract: No abstract text available
    Text: Pulse Jack SMT Power Inductors Power Beads - PA3779.XXXHL Series Electronics Current Rating: Over 86 Apk Inductance Range: 180nH to 350nH Height: 8.0 mm Max Footprint: 11.4mm x 7.0mm Max Halogen Free Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C 7


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    PDF PA3779 180nH 350nH 141HL 181HL 241HL

    680-W

    Abstract: 180N15P IXFN180N15P
    Text: PolarHTTM HiPerFET IXFN 180N15P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150 V V VDSS VGSM Continuous


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    PDF 180N15P 03-23-06-C 680-W 180N15P IXFN180N15P

    1N914

    Abstract: M2764A M27C64A
    Text: M2764A NMOS 64 Kbit 8Kb x 8 UV EPROM NOT FOR NEW DESIGN • FAST ACCESS TIME: 180ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 35mA max ■ TTL COMPATIBLE DURING READ and PROGRAM ■ FAST PROGRAMMING ALGORITHM ■


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    PDF M2764A 180ns M2764A M27C64A 1N914

    Delta Electronics dps -300HB A

    Abstract: Delta Electronics dps -350MB A Delta Electronics DPS 350MB SFX12V Delta Electronics dps 100 Delta Electronics DPS-300HB
    Text: w w w. d e l t a w w. c o m DPS-180NB Series 80 W x 52 (H) x 210 (L) mm FEATURES Output V1 V2 V3 V4 V5 ELECTRICAL SPECIFICATIONS ENVIRONMENTAL FlexATX Complies with SFX12V V2.1 Remote On/Off High Reliability Low Acoustic Noise Built-in EMI Filter Meets IEC 60950: 1999/UL 60950 3rd Edition


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    PDF DPS-180NB SFX12V 1999/UL 115Vac 2100Vac 100mS 500mS, Delta Electronics dps -300HB A Delta Electronics dps -350MB A Delta Electronics DPS 350MB Delta Electronics dps 100 Delta Electronics DPS-300HB

    180N055T

    Abstract: No abstract text available
    Text: Advance Technical Information IXTQ 180N055T IXTA 180N055T IXTP 180N055T Trench Gate Power MOSFET VDSS ID25 = 55 V = 180 A Ω = 4.0 mΩ RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


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    PDF 180N055T O-220 180N055T

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM IXTP 180N055T IXTQ 180N055T VDSS = 55 V ID25 = 180 A Ω RDS on = 4.0 mΩ TO-220 (IXTP) Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C 55 V VGS Continuous ±20 V ID25 TC = 25°C; Note 1


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    PDF ISOPLUS220TM 180N055T 180N055T O-220 O-220) 123B1 728B1 065B1 IXTP180N055T

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 180N06 IXFX 180N06 VDSS ID25 RDS on Single Die MOSFET = 60 V = 180 A = 5 mW trr £ 200 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS


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    PDF 180N06 180N06 247TM O-264

    180N10

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFX 180N10 IXFK 180N10 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 100 100 V V VGS VGSM Continuous Transient


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    PDF 180N10 180N10 247TM O-264

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFK 180N07 IXFX 180N07 HiPerFETTM Power MOSFETs RDS on Single MOSFET Die Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings VGS VGSM 70 70 V V Continuous Transient ±20 ±30 V


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    PDF 180N07 180N07 247TM O-264

    HCF4585B

    Abstract: HCC4585B HCC4585BF HCF4585BC1 HCF4585BEY HCF4585BM1
    Text: HCC/HCF4585B 4-BIT MAGNITUDE COMPARATOR . . . . . EXPANSION TO 8, 12, 16 . 4 N BITS BY CASCADING UNITS MEDIUM-SPEED OPERATION : COMPARES TWO 4-BIT WORDS IN 180ns typ. AT 10V STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS 5V, 10V, AND 15V PARAMETRIC RATINGS


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    PDF HCC/HCF4585B 180ns 100nA HCC4585BF HCF4585BM1 HCF4585BEY HCF4585BC1 HCC4585B HCF4585B HCC4585B HCC4585BF HCF4585BC1 HCF4585BEY HCF4585BM1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A Ω = 8 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGS


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    PDF 180N10 OT-227 E153432 125OC

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Multilayer Chip Inductors for High Frequency Applications HK series HK1608R18J-T Features Item Summary 180nH(±5%), 300mA, 8, 0603 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 4000pcs Products characteristics table


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    PDF HK1608R18J-T 180nH( 300mA, 4000pcs 50MHz 300mA 400MHz

    180n15p

    Abstract: 180N15 PLUS247 IXFX180N15P
    Text: PolarTM HiPerFET Power MOSFET IXFK 180N15P IXFX 180N15P VDSS = 150 V ID25 = 180 A RDS on ≤ 11 m Ω ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


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    PDF 180N15P -55ombs 180n15p 180N15 PLUS247 IXFX180N15P

    Untitled

    Abstract: No abstract text available
    Text: VS-180NQ045PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 180 A FEATURES • 150 °C TJ operation Lug terminal anode • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability


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    PDF VS-180NQ045PbF E222165 VS-180NQ. 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    HCF4585B

    Abstract: No abstract text available
    Text: HCF4585B 4-BIT MAGNITUDE COMPARATOR • ■ ■ ■ ■ ■ ■ ■ EXPANSION TO 8, 12, 16.4 N BITS BY CASCADING UNIT MEDIUM SPEED OPERATION : COMPARES TWO 4-BIT WORDS IN 180ns Typ. at 10V STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO


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    PDF HCF4585B 180ns 100nA JESD13B HCF4585B

    180N10

    Abstract: 125OC
    Text: IXFK 180N10 IXFX 180N10 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mΩ trr ≤ 250 ns Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 100 100 V


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    PDF 180N10 125OC 180N10 125OC

    180N06

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 180N06 IXFX 180N06 VDSS ID25 RDS on Single Die MOSFET = 60 V = 180 A = 5 mW trr £ 200 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS


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    PDF 180N06 180N06 247TM O-264

    ixfn 180n20

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 180N20 VDSS ID25 RDS on trr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data S Symbol Test Conditions VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 200


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    PDF 180N20 OT-227 ixfn 180n20

    TSOP 2-44

    Abstract: km68
    Text: KM68V4000AL / AL-L CMOS SRAM 5 12Kx8 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e : 70,100ns m ax. • Low power dissipation - S tandb y(C M O S ) : 180n W (M ax.) L Version : 5 4n W (M ax.) L-L Version -O p era tin g


    OCR Scan
    PDF V4000AL 512Kx8 100ns 180nW 144mW/MHz KM68V4000ALG/ALG-L 525mii) KM68V4000ALT/ALT-L KM68V4000ALR/ALR-L KM68V4000AL/AL-L TSOP 2-44 km68

    180NQ

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER bSE D WÊÊ 4Ö55452 DOlTMm Slb M I N R PD-2.227A International Rectifier i s o n q . s e r i e s SCHOTTKY RECTIFIER 180 Amp Major Ratings and Characteristics Description/Features Characteristics 180NQ. Units lF AV Rectangular


    OCR Scan
    PDF 180NQ. 180Apk TJ-125Â D-379 D-380 180NQ

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK1266 2SK1266 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • • • • Low ON resistance Rds on : RDs (on) l = 0.08il (typ.) High switching rate : tf= 180ns (typ.) No secondary breakdown For low voltage driving (VGs = 4V)


    OCR Scan
    PDF 2SK1266 180ns 2SKi266

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM44C1000AL 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • P e rfo rm a n c e range: tR A C tcAC KM44C1OOOAL- 7 70ns 2 0 ns KM 44C 1 OOOAL- 8 80ns I 2 0 ns 1 50 ns 25ns i 180ns K M 4 4 C 1 0 0 0 A L -1 0 10 0ns tRC


    OCR Scan
    PDF KM44C1000AL KM44C1OOOAL- 180ns 20-LEAD

    2SK1267

    Abstract: SC-65
    Text: Power F-MOS FET 2SK1267 2SK1267 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistan ce Rds on : R DS (on) 1 = 0 .07ft (typ.) Unit: mm • High switching rate : tf= 180ns (typ.) 1 5 .5 m ax . • No secondary breakdown 13.5max.


    OCR Scan
    PDF 2SK1267 180ns 0D171ba -25tH 2SK1267 SC-65