Untitled
Abstract: No abstract text available
Text: LM2483 LM2483 180V Triple Bias Clamp Literature Number: SNOSA33B October 25, 2011 LM2483 180V Triple Bias Clamp General Description Features The LM2483 driver is an Integrated 180V triple bias clamp circuit for DC recovery of each of the AC coupled outputs of
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LM2483
LM2483
SNOSA33B
LM126X
LM2426
1080i
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reverse bias diode characterstics
Abstract: rfl1n18 AN7254 AN7260 RFL1N20 TB334
Text: RFL1N18, RFL1N20 Semiconductor 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 180V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
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RFL1N18,
RFL1N20
TA09289.
25VDSS
AN7254
AN7260.
reverse bias diode characterstics
rfl1n18
AN7260
RFL1N20
TB334
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Untitled
Abstract: No abstract text available
Text: RFK25N18, RFK25N20 Semiconductor Data Sheet October 1998 25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs File Number 1500.3 Features • 25A, 180V and 200V These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such
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RFK25N18,
RFK25N20
TA09594.
RFK25N18
-204AE
AN7254
AN7260.
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Untitled
Abstract: No abstract text available
Text: w vys S RFM12N18, RFM12N20, RFP12N18, RFP12N20 Semiconductor y y 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 12A, 180V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
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RFM12N18,
RFM12N20,
RFP12N18,
RFP12N20
250S2
TB334
TA09293.
75BVnss
75BVncc
50BVd
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Untitled
Abstract: No abstract text available
Text: OBSOLETE LM2483 www.ti.com SNOSA33C – NOVEMBER 2002 – REVISED APRIL 2013 LM2483 180V Triple Bias Clamp Check for Samples: LM2483 FEATURES DESCRIPTION • • • The LM2483 driver is an Integrated 180V triple bias clamp circuit for DC recovery of each of the AC
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LM2483
SNOSA33C
LM2483
LM2426
LM126X
1080i
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PDF
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Untitled
Abstract: No abstract text available
Text: W vys S RFL1N18, RFL1N20 S e m ico n d ucto r 7 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Description Features 1A, 180V and 200V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
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OCR Scan
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RFL1N18,
RFL1N20
TA09289.
AN7254
AN7260.
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PDF
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Untitled
Abstract: No abstract text available
Text: RFL1N18, RFL1N20 S E M I C O N D U C T O R 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 180V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
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Original
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RFL1N18,
RFL1N20
TA09289.
TB334
75VDSS
50VDSS
25VDSS
AN7254
AN7260.
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PDF
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Untitled
Abstract: No abstract text available
Text: DXT696BK 180V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN TO252 Features Mechanical Data • BVCEO > 180V IC = 0.5A high Continuous Collector Current ICM = 1A Peak Pulse Current High gain device > 500 at IC =100mA Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2
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DXT696BK
100mA
AEC-Q101
J-STD-020
MIL-STD-202,
DS36574
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DIODE N20
Abstract: No abstract text available
Text: RFL1N18, RFL1N20 HARRIS S E M I C O N D U C T O R 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1 A, 180V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
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RFL1N18,
RFL1N20
TA09289.
AN7260.
RFL1N20
DIODE N20
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n925
Abstract: No abstract text available
Text: Ordering number : EN2583A smyo i i No.2583A _ S B 8 - 1 8 Schottky Barrier Diode Twin Type • Cathode Common 180V, 8A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers)
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EN2583A
N92583-3/3
n925
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SB100-18
Abstract: EN2580B
Text: SB100-18 Ordering number : EN2580B SANYO Semiconductors DATA SHEET SB100-18 Schottky Barrier Diode Twin Type • Cathode Common 180V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • •
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SB100-18
EN2580B
SB100-18
EN2580B
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Untitled
Abstract: No abstract text available
Text: LM 2483 LM2483 180V Triple Bias Clamp Te x a s In s t r u m e n t s Literature Number: SNOSA33B * O cto b e r 25, 2011 e x a s LM2483 In s t r u m e n t s 180V Triple Bias Clamp General Description Features T he L M 2483 d riv e r is an Integrated 18 0 V triple b ia s clam p
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LM2483
SNOSA33B
LM2483
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SB05-18V
Abstract: No abstract text available
Text: Ordering number:EN5683 SB05-18V Schottky Barrier Diode 180V, 500mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1289 [SB05-18V] Features · Low forward voltage (VF max=0.85V).
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EN5683
SB05-18V
500mA
SB05-18V]
SB05-18V
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SB05-18M
Abstract: No abstract text available
Text: Ordering number:EN2655A SB05-18M Schottky Barrier Diode 180V, 500mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1158 [SB05-18M] Features · Low forward voltage (VF max=0.85V).
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EN2655A
SB05-18M
500mA
SB05-18M]
SC-51
SB05-18M
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sy 360 diode
Abstract: SB50-18
Text: SB50-18 Ordering number : EN2579C SANYO Semiconductors DATA SHEET SB50-18 Schottky Barrier Diode Twin Type • Cathode Common 180V, 50A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • •
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SB50-18
EN2579C
sy 360 diode
SB50-18
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EN2580
Abstract: SB100-18
Text: SB100-18 Ordering number : EN2580B SANYO Semiconductors DATA SHEET SB100-18 Schottky Barrier Diode Twin Type • Cathode Common 180V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • •
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SB100-18
EN2580B
EN2580
SB100-18
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN4709 SBA120-18J Schottky Barrier Diode Twin Type • Cathode Common 180V, 12A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1178A [SBA120-18J] Features · Low forward voltage (VF max=0.85V).
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EN4709
SBA120-18J
SBA120-18J]
O-220ML
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Untitled
Abstract: No abstract text available
Text: O rd e rin g n u m b e r : EN2582A N0.2582A _ S B 1 2 - 1 8 Schottky B arrier Diode Twin Type • Cathode Common 180V, 12A Rectifier A pplications • High frequency rectification (switching regulators, converters, choppers)
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EN2582A
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RFK25N20
Abstract: AN7254 AN7260 RFK25N18
Text: RFK25N18, RFK25N20 Data Sheet October 1998 25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,
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RFK25N18,
RFK25N20
TA09594.
RFK25N18
O-204AE
RFK25N20
AN7254
AN7260
RFK25N18
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN2584A N0.2584A _ S B 3 0 - 1 8 Schottky Barrier Diode Twin Type • Cathode Common 180V, 3A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers) Features • Low forward voltage (Vp max = 0.85V)
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EN2584A
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN2583B SB80-18 Schottky Barrier Diode Twin Type • Cathode Common 180V, 8A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1160 [SB80-18] Features · Low forward voltage (VF max=0.85V).
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EN2583B
SB80-18
SB80-18]
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN4709 SBA120-18J Schottky Barrier Diode Twin Type • Cathode Common 180V, 12A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1178A [SBA120-18J] Features · Low forward voltage (VF max=0.85V).
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EN4709
SBA120-18J
SBA120-18J]
O-220ML
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PDF
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sb50
Abstract: No abstract text available
Text: Ordering number:EN2684B SB50-18K Schottky Barrier Diode Twin Type • Cathode Common 180V, 5A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1199B [SB50-18K] Features · Low forward voltage (VF max=0.85V).
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EN2684B
SB50-18K
1199B
SB50-18K]
O-220MF
sb50
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PDF
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SB30-18
Abstract: EN2584B
Text: Ordering number:EN2584B SB30-18 Schottky Barrier Diode Twin Type • Cathod Common 180V, 3A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1159B [SB30-18] Features · Low forward voltage (VF max=0.85V).
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EN2584B
SB30-18
1159B
SB30-18]
O-220AB
SC-46
SB30-18
EN2584B
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