ASI10539
Abstract: ASI3003 147 B transistor
Text: ASI3003 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 3003 is a common base transistor capable of providing 3.0 W Class-C RF output power @ 3.0 GHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 6.0 dB min. at 3 W / 3,000 MHz
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ASI3003
ASI10539
ASI3003
147 B transistor
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MSC3003
Abstract: No abstract text available
Text: MSC3003 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MSC3003 is a common base transistor capable of providing 3.0 W Class-C RF output power @ 3.0 GHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 6.0 dB min. at 3 W / 3,000 MHz
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MSC3003
MSC3003
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ASI10538
Abstract: ASI3001
Text: ASI3001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 3001 is a common base transistor capable of providing 1 W Class-C RF output power @ 3000 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 8.5 dB typ. at 1.0 W / 3,000 MHz
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ASI3001
ASI10538
ASI3001
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SD1831
Abstract: No abstract text available
Text: SD1831 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI SD1831 is a common base transistor capable of providing 1 W Class-C RF output power @ 3000 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 8.5 dB typ. at 1.0 W / 3,000 MHz
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SD1831
SD1831
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NEC JAPAN 282 110 01
Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the
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2SC4570
2SC4570
SC-70)
2SC4570-T1
NEC JAPAN 282 110 01
NEC 2561
TYP 513 309
2SC4570-T1
2SC4570-T2
date sheet ic 7483
marking 929 922
nec 5261
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CMPT5551
Abstract: transistor NF marking code
Text: Central CMPT5551 TM Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier
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CMPT5551
CMPT5551
OT-23
100oC
100MHz
transistor NF marking code
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JC700
Abstract: transistor k 790
Text: MSC83305 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC83305 is a common base transistor designed for Class C amplifier applications in the 1.0 – 3.0 GHz frequency range PACKAGE STYLE .250 2L FLG A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 5.0 dB typ. at 4.5 W / 3.0 GHz
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MSC83305
MSC83305
JC700
transistor k 790
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CIL TRANSISTOR 188
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CIL 187 TO-92 Plastic Package Intended For Low Voltage , High Current Output Pair Application Complementary CIL 188 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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C-120
CIL187
Rev060901
CIL TRANSISTOR 188
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2sd1187
Abstract: ed general semiconductor 4-00J1
Text: 2SD1187 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 187 HIGH POWER SWITCHING APPLICATIONS DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 15.9MAX. . ¿3.2 ±0.2 pi • Low Collector-Emitter Saturation Voltage
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2SD1187
2sd1187
ed general semiconductor
4-00J1
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2sd1187
Abstract: 2SD118
Text: TOSHIBA 2SD1187 2 S D 1 187 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SW ITCHING APPLICATIONS DC-DC CONVERTER A N D DC-AC INVERTER APPLICATIONS • INDUSTRIAL APPLICATIONS Unit in mm 15.9MAX. . ^3.2 ±0.2 Low Collector-Emitter Saturation Voltage : V qe sat = 0-5V
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2SD1187
2sd1187
2SD118
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2Sd1187
Abstract: No abstract text available
Text: TOSHIBA 2SD1187 2 S D 1 187 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH PO W ER SWITCHING APPLICATIONS DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 5 .9 M A X . ' • Low Collector-Emitter Saturation Voltage : V ç e sat = 0.5V
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2SD1187
2Sd1187
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2SD118
Abstract: 2SD1187
Text: 2SD1187 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 187 Unit in mm HIGH POWER SWITCHING APPLICATIONS DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS • SYMBOL VCBO v CEO v EBO ic Ib Pc Tj Tstg RATING 100 80 5 10 2 80 150 -5 5 -1 5 0
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2SD1187
2SD118
2SD1187
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ac187
Abstract: Transistor AC 187 AC 187 npn transistor TO 1 ac188 valvo Transistor AC 188 AC 188 valvo transistoren valvo transistor valvo germanium
Text: NICHT FÜR N E U E N T W I C K L U N G E N AC 187 GERMANIUM - NPN - NF - TRANSISTOR für Endstufen, mit AC 188 als komplementäres Paar Mechanische Daten: Gehäuse: Metall, JEDEC TÜ-1, 1 A 3 DIN 41 871 Alle Elektroden sind vom Gehbluse isoliert. Farbpunkt: Kollektorseite
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Transistor AC 187
Abstract: AC187K ac187 AC 187 npn transistor TO 1 ac188k Transistor AC 187 k valvo valvo transistor valvo germanium valvo transistoren
Text: NICHT FÜR N E U E N T W I C K L U N G E N AC 187 K GERMANIUM - NPN - NF - TRANSISTOR für Endstufen, in Verbindung mit AC 188 K als komplementäres Paar Mechanische D a t e n : GehKuse: Metall JEDEC TO-1 bzw. 1 A 3 nach DIN 41 871 in Kdhlklotz Alle Elektroden sind
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transistor tl 187
Abstract: BD187 TRANSISTOR 187 TRANSISTOR BD 187 BD185 BD189 TL 187 TRANSISTOR NPN TL 187 TRANSISTOR BE 187 TRANSISTOR BD transistor
Text: MOTOROLA 6367254 SC -CXSTRS/R F> MOTOROLA SC ^ XSTRS/R ßF^t.3ti7as4 96D 8 0 5 6 3 F> D BD185 BD187 BD189 MOTOROLA m SEM ICO NDUCTO R TECHNICAL DATA PLASTIC M E D IU M POWER SILICON NPN TRANSISTOR 4 AMPERE POWER TRANSISTOR . . . designed for use in 5 to 1 0 W att audio amplifiers utilizing
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the
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2SC4570
2SC4570
SC-70)
4570-T
PACK878
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Untitled
Abstract: No abstract text available
Text: ^ 3 3 -0 5 Philips Components Data sheet status Preliminary specification date of Issue June 1992 LZE18100R NPN silicon microwave power transistor MAINTENANCE TYPE PHILIPS INTERNATIONAL 711ÜÖEb OÜ4b322 27T « P H I N St.E D FEATU RES DESCRIPTION • Interdigitated structure giving a
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LZE18100R
FO-57C
711DflEb
DD4b323
FO-57C.
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b 514 transistor
Abstract: 2SC SERIES SC marking code NPN transistor 2SC SERIES TRANSISTORS 2SC4102 2SC3906K TRANSISTOR 2SC transistor DJ marking 2SA1514K 2SA1579
Text: 2SC3906K 2SC4102 Transistor, NPN Features Dimensions Units : mm available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) package 2SC3906K (SMT3) package marking: 2SC3906K and 2SC4102; T * , where ★ is hFE code high breakdown voltage, Vqeo = 120 V complementary pair with 2SA1514K
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2SC3906K
2SC4102
SC-59)
SC-70)
2SC4102;
2SA1514K
2SA1579
2SC3906K
b 514 transistor
2SC SERIES
SC marking code NPN transistor
2SC SERIES TRANSISTORS
2SC4102
TRANSISTOR 2SC
transistor DJ marking
2SA1579
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE MAINTENANCE TYPE □ taE D • bbS3T31 0 0 1 5 0 4 5 I 1 I ' M06075B400Z _ V PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended fo r use in military and professional applications. It operates only in pulsed conditions and is recommended fo r IFF applications.
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bbS3T31
M06075B400Z
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AC 187 npn transistor TO 1
Abstract: Transistor AC 188 transistor lt 186 Transistor AC 187 2SC3906K
Text: 2SC3906K 2SC4102 Transistor, NPN Features Dimensions Units : mm available In SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) package package marking: 2SC3906K and 2SC4102; T * . where ★ is hFE code high breakdown voltage, Vceo = 120 V complementary pair with 2SA1514K
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2SC3906K
2SC4102
SC-59)
SC-70)
2SC4102;
2SA1514K
2SA1579
2SC3906K
AC 187 npn transistor TO 1
Transistor AC 188
transistor lt 186
Transistor AC 187
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transistor 1211
Abstract: transistor su 312 transistor zo 109
Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
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2SC5005
2SC5005
Collect69
transistor 1211
transistor su 312
transistor zo 109
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Untitled
Abstract: No abstract text available
Text: Central" CMPT5551 Sem iconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage am plifier
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CMPT5551
CMPT5551
OT-23
100MHz
00D1A37
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KSAB12
Abstract: e3 TRANSISTOR
Text: KSC1623 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSC • Complement to KSAB12 ABSOLUTE MAXIMUM RATINGS TA- 2 5 t : Characteristic Sym bol Collector-Base Voltage Collector-Em ltter Voltage Emitter-Base Voltage Collector Current
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KSC1623
KSAB12
KSAB12
e3 TRANSISTOR
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KSC2310
Abstract: J-Z9-23
Text: SAMSUNG S EM I C O N D U C T O R INC 14 E 0 KSC2310 17^4142 OOOb'ilt 4 | NPN EPITAXIAL SILICON TRANSISTOR T -Z 9 -2 3 HIGH VOLTAGE POWER AMPLIFIER • Collactor— B«m Voltage Vc*o»200V TO-92L • Currant Gain-Bandwidth Product fT-100MHz OVp ABSOLUTE MAXIMUM RATINGS Ta=25°C)
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KSC2310
100MHz
J-Z9-23
O-92L
lc-100/iA,
J-Z9-23
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