Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    18W 12 TRANSISTOR Search Results

    18W 12 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    18W 12 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G6001528-Q3 T2G6001528-Q3 TQGaN25

    18w transistor

    Abstract: No abstract text available
    Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G6001528-Q3 T2G6001528-Q3 TQGaN25 18w transistor

    Untitled

    Abstract: No abstract text available
    Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G6001528-Q3 T2G6001528-Q3 TQGaN25

    Untitled

    Abstract: No abstract text available
    Text: <Silicon RF Power Modules > RA18H1213G RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to 1.30-GHz range. The battery can be connected directly to the drain of the


    Original     		PDF RA18H1213G 30GHz RA18H1213G 18-watt 30-GHz

    RA18H1213G-101

    Abstract: No abstract text available
    Text: <Silicon RF Power Modules > RA18H1213G RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to 1.30-GHz range. The battery can be connected directly to the drain of the


    Original     		PDF RA18H1213G RA18H1213G 18-watt 30-GHz RA18H1213G-101

    smd diode code 18W

    Abstract: 18w smd transistor smd transistor code 18W 04n60c2 Q67040-S4304 SMD Transistor 18W transistor SMD MARKING CODE 18w SDP06S60 SPB04N60C2 SPP04N60C2
    Text: SPP04N60C2 SPB04N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Ultra low gate charge VDS 600 V · Periodic avalanche rated RDS on 0.95 W Extreme d v/dt rated


    Original     		PDF SPP04N60C2 SPB04N60C2 P-TO263-3-2 P-TO220-3-1 Q67040-S4304 04N60C2 Q67040-S4305 smd diode code 18W 18w smd transistor smd transistor code 18W 04n60c2 Q67040-S4304 SMD Transistor 18W transistor SMD MARKING CODE 18w SDP06S60 SPB04N60C2 SPP04N60C2

    DM6030HK

    Abstract: MAAP-000079-PED000 DM4030LD MAAP-000079-PKG001 MAAP-000079-SMB001 AN3016 MAAP-000079-SMB004 MAAPGM0079-DIE diemat
    Text: Amplifier, Power, 18W 7.5-10.5 GHz MAAP-000079-PED000 Rev — Preliminary Datasheet Features ♦ 18 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 8-10V Operation


    Original     		PDF MAAP-000079-PED000 MAAP-000079-PED000 10-mil DM6030HK DM4030LD MAAP-000079-PKG001 MAAP-000079-SMB001 AN3016 MAAP-000079-SMB004 MAAPGM0079-DIE diemat

    Untitled

    Abstract: No abstract text available
    Text: Amplifier, Power, 18W 7.5-10.5 GHz MAAP-000079-PED000 Rev A Preliminary Datasheet Features ♦ 18 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 8-10V Operation


    Original     		PDF MAAP-000079-PED000 MAAP-000079-PED000 10-mil

    transistor marking code 18W

    Abstract: RA18H1213G RA18H1213G-101 f1270 Transistor 18W on
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA18H1213G RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to


    Original     		PDF RA18H1213G 30GHz RA18H1213G 18-watt 30-GHz transistor marking code 18W RA18H1213G-101 f1270 Transistor 18W on

    smd transistor code 18W

    Abstract: smd diode code 18W 04n60c2 transistor SMD MARKING CODE 18w 18w smd transistor SMD Transistor 18W 04N60 SPD04N60C2 04N60C SDP06S60
    Text: SPD04N60C2 SPU04N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Ultra low gate charge VDS 600 V · Periodic avalanche rated RDS on 0.95 W · Extreme dv/dt rated


    Original     		PDF SPD04N60C2 SPU04N60C2 P-TO251 P-TO252 Q67040-S4307 04N60C2 Q67040-S4306 smd transistor code 18W smd diode code 18W 04n60c2 transistor SMD MARKING CODE 18w 18w smd transistor SMD Transistor 18W 04N60 SPD04N60C2 04N60C SDP06S60

    QPP-022

    Abstract: No abstract text available
    Text: QPP-022 180W, 869-894MHz Class AB Power Stage QuikPAC Module Data General description: Features: The QPP-022 QuikPAC RF power module is a Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for cellular base stations. The power transistors are


    Original     		PDF QPP-022 869-894MHz QPP-022 H10549) H10895)

    26W TC-DEL LAMP

    Abstract: electronic ballast 18w cfl lamp 18w smd transistor ELECTRONIC BALLAST 18W SCHEMATIC 18w cfl circuit circuit diagram electronic ballast for 18W 4 pin TC-DEL smd 18w ELECTRONIC BALLAST LAMP IR2520 SCHEMATIC ELECTRONIC BALLAST DIAGRAM for PL-C 26W
    Text: Application Note AN-1062 IRPLMB1E - 25W 230VAC Small Size Ballast Using IR2520D By Cecilia Contenti Table of Contents Page Overview .1 Features .2


    Original     		PDF AN-1062 230VAC IR2520D IR2520D 26W TC-DEL LAMP electronic ballast 18w cfl lamp 18w smd transistor ELECTRONIC BALLAST 18W SCHEMATIC 18w cfl circuit circuit diagram electronic ballast for 18W 4 pin TC-DEL smd 18w ELECTRONIC BALLAST LAMP IR2520 SCHEMATIC ELECTRONIC BALLAST DIAGRAM for PL-C 26W

    RA18H1213G

    Abstract: RA18H1213G-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA18H1213G 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to


    Original     		PDF RA18H1213G 30GHz RA18H1213G 18-watt 30-GHz RA18H1213G-01

    MULTIWATT15 package

    Abstract: MULTIWATT15 TDA7481
    Text: TDA7481 18W MONO CLASS-D AMPLIFIER 18W OUTPUT POWER: RL = 8Ω/4Ω; THD = 10% HIGH EFFICIENCY WIDE SUPPLY VOLTAGE RANGE UP TO ±25V SPLIT SUPPLY OVERVOLTAGE PROTECTION ST-BY AND MUTE FEATURES SHORT CIRCUIT PROTECTION THERMAL OVERLOAD PROTECTION Multiwatt15


    Original     		PDF TDA7481 Multiwatt15 TDA7481 Multiwatt15 100nF MULTIWATT15 package

    33PFX4

    Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF
    Text: TO SHIBA 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm Output Power : Po = 80W Min. (f= 175MHz, V e e = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING


    OCR Scan     		PDF 2SC2782 175MHz, 2-13C1A 961001EAA2' 33PFX4 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF

    transistor 2sc2782

    Abstract: NPN 2SC2782
    Text: TOSHIBA 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS. U nit in mm ia 4 ± a 5 O utput Power : Po = 80W Min. (f = 175MHz, V c c = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL


    OCR Scan     		PDF 2SC2782 175MHz, 2-13C1A 961001EAA2' transistor 2sc2782 NPN 2SC2782

    Mitsubishi transistor databook

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3022 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dimensions in mm FEATURES •


    OCR Scan     		PDF 2SC3022 2SC3022 520MHz, Mitsubishi transistor databook

    2SC2628

    Abstract: NPN EPITAXIAL PLANAR TYPE 175mhz 1w 18W 12 transistor
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2628 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X


    OCR Scan     		PDF 2SC2628 2SC2628 175MHz 175MHz, NPN EPITAXIAL PLANAR TYPE 175mhz 1w 18W 12 transistor

    10w 900MA

    Abstract: F100-F113 18W 12 transistor f128 transistor F114f 18w transistor F-111
    Text: M IC R O -O H M CORPORATION M anufacturers of Quality Resistors W irew o u n d F u s e R e s is to rs S e r ie s F-100 G e n e ra l S p e cific a tio n s : Resistance Range: 0.20 - 200£2 Resistance Tolerance: 10%, 5% and 3% Blow Characteristics: Per table


    OCR Scan     		PDF F-100 50ppm/ 30ppm/ 10w 900MA F100-F113 18W 12 transistor f128 transistor F114f 18w transistor F-111

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2628 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X


    OCR Scan     		PDF 2SC2628 2SC2628 175MHz 175MHz,

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C2 78 2 VHF BAND POWER AMPLIFIER APPLICATIONS • U n it in mm 1 8 .4 ± Q 5 Output Power : Po = 80W Min. (f= 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SC2782 175MHz, 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: M IC R O -O H M CORPORATION M a n u fa c tu re rs o f Q uality R esistors Wirewound Fuse Resistors Series F-100 General Specifications: Resistance Range: 0.212 - 20011 Resistance Tolerance: 10%, 5% and 3% Blow Characteristics: Per table Continuous Operation: Per table


    OCR Scan     		PDF F-100 50ppm/Â 30ppm/Â

    TRANSISTOR J 5804

    Abstract: TRANSISTOR J 5804 EQUIVALENT TRANSISTOR J 5804 NPN j 5804 transistor 2SC2628 2sc262 8-32UNC-3A RF POWER TRANSISTOR NPN vhf
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTIO N OUTLINE DRAW ING 2SC 2628 is a silicon NPIM epitaxial planar typ e transistor designed fo r RF power am plifiers in V H F band m ob ile radio applications. Dimensions in mm C 1 .5 M A X


    OCR Scan     		PDF 2SC2628 2SC2628 TRANSISTOR J 5804 TRANSISTOR J 5804 EQUIVALENT TRANSISTOR J 5804 NPN j 5804 transistor 2sc262 8-32UNC-3A RF POWER TRANSISTOR NPN vhf

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON TDA7481 5 7 . KfflD g[Si llLi(gra©lii!lD(gi 18W MONO CLASS-D AMPLIFIER PR O D U C T PREVIEW 18W OUTPUT POWER: RL = 8i2; THD = 10% HIGH EFFICIENCY WIDE SUPPLY VOLTAGE RANGE (UP TO ±25V SPLIT SUPPLY OVERVOLTAGE PROTECTION ST-BY AND MUTE FEATURES


    OCR Scan     		PDF TDA7481 att15 TDA7481 Multiwatt15 100nF 10OnF