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    SPC Multicomp MP-19-70-1-TGG

    Rf/Coaxial, Sma Jack, Straight, 50 Ohm, Solder; Connector Type:Sma Coaxial; Connector Body Style:Edge Launch Jack; Coaxial Termination:Solder; Impedance:50Ohm; Coaxial Cable Types:-; Contact Material:Beryllium Copper; Product Range:-Rohs Compliant: Yes |Multicomp Pro MP-19-70-1-TGG
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    Newark MP-19-70-1-TGG Bulk 3,256 1
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    19-70-1 TGG Datasheets Context Search

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    multicomp sma

    Abstract: transistor D1710 brass jis c3604 SMA jack 19-70-TGG COPPER C3604 d1710 B196 C17300 JIS-C3604
    Text: REVISIONS PART NO. 19-70-TGG ECN # REV DESCRIPTION - A RELEASED DRAWN DATE Sumana 31/1/08 CHECKD DATE APPRVD DATE Suresh 31/1/08 G. C 15/2/08 Dimensions : Millimetres Inches This data sheet and its contents (the "Information") belong to the Premier Farnell Group


    Original     		PDF 19-70-TGG M10000686 19-70-TGG multicomp sma transistor D1710 brass jis c3604 SMA jack COPPER C3604 d1710 B196 C17300 JIS-C3604

    D0005M

    Abstract: G000557
    Text: IB M 1 1 S 1 3 2 0 B N IB M 1 1 S 1 3 2 0 B L 1M x 32 SODIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tCAC CAS Access Time 15ns 20ns t/VA Access Time From Address 30ns 35ns


    OCR Scan     		PDF 72-Pin 110ns 130ns 128ms 0000S5Û IBM11S1320BN IBM11S1320BL 1Mx32 03H7113 SA14-4452-01 D0005M G000557

    TGUI9680

    Abstract: tgui96 wram
    Text: TGUI9680 6.0 PRELIMINARY Electrical Specifications This section describes the specifications of the TGUI9680. The following topics are discussed: 6.1 Absolute Maximum Ratings 6.2 DC Specifications 6.3 AC Specifications 6.1 Absolute Maximum Ratings Table 6-1. Absolute Maximum Ratings


    OCR Scan     		PDF TGUI9680 TGUI9680. TGUI9680 TGG21 0DG0433 tgui96 wram

    NN5118160

    Abstract: No abstract text available
    Text: NN5116160A / NN5118160A series Fast Page Mode CMOS 1Mx 16bit Dynamic RAM NPN a< Preliminary Specification d e s c r ip t io n The NN5116160A/18160A series is a high performance CMOS Dynamic Random Access Memory orga­ nized as 1,048,576 words by 16 bits. The NN5116160A/18160A series is fabricated with advanced CMOS


    OCR Scan     		PDF NN5116160A NN5118160A 16bit NN5116160A/18160A NN5116 60AXX 128ms NN51181 NN5118160

    Nippon capacitors

    Abstract: No abstract text available
    Text: MM1M0J32L/MM1M0J36L CMOS 1Mx 32bit / 36bit Fast Page Mode Memory Module DESCRIPTION The MM1M0J32L/J36L is a 32 Megabit Dynamic Random Access Memory Module organized as 1,048,576 x 32 x 36 bits in a 72 lead single inline module. The module contains eight 1M x 4bit Dynamic Random Access


    OCR Scan     		PDF MM1M0J32L/MM1M0J36L 32bit 36bit MM1M0J32L/J36L MM1M0J13- 57REF MM1M0J32UMM1M0J36L x32blt/x36bit CIQCI02D2 Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: IB M 0 4 3 6 1 1 Q L A IB M 0 4 1 8 1 1 Q L A Preliminary 32K X 36 & 64K X 18 SRAM Features • Common I/O • 32K x 36 or 64K x 18 Organizations • Asynchronous Output Enable and Power Down Inputs • 0.5 Micron CMOS Technology • Synchronous Pipeline Mode Of Operation with


    OCR Scan     		PDF IBM043611QLA IBM041811QLA

    dq35j

    Abstract: Nippon capacitors
    Text: MM2M0J32L / MM2M0J36L CMOS 2M x 32bit / 36bit Fast Page Mode Memory Module DESCRIPTION The MM1M0J32L/J36L is a 64 Megabit Dynamic Random Access Memory Module organized as 2,097,152 x 32 x 36 bits in a 72 lead single inline module. The module contains sixteen 1M x 4bit Dynamic Random Access


    OCR Scan     		PDF MM2M0J32L MM2M0J36L 32bit 36bit MM1M0J32L/J36L MM2M0J32UMM2M0J36L x32biVx36blt dq35j Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: NN511663 / NN511666series Fast Page Mode _ _w / CMOS 64Kx 16bit Dynamic RAM NPNAV DESCRIPTION The NN511663/1666 series is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words by 16 bits. The NN511663/1666 series is fabricated with advanced CMOS technology and designed with innovative


    OCR Scan     		PDF NN511663 NN511666series 16bit NN511663/1666 NN511663/ NN511666aertes NN511663XXI

    Untitled

    Abstract: No abstract text available
    Text: = = = ¥ = = = r= 7 = IB M 0 4 3 6 1 1 R L A IB M 0 4 1 8 1 1 R L A Preliminary 32KX36&64KX18SRAM Features • 32K x 36 or 64K x 18 Organizations • 0.5 Micron CMOS Technology • Synchronous Pipeline Mode Of Operation with Self-Timed Late Write • Single Differential PECL Clock compatible with


    OCR Scan     		PDF 32KX36 64KX18SRAM IBM043611RLA IBM041811RLA 03H9039 SA14-4658-02

    Untitled

    Abstract: No abstract text available
    Text: NN51V16160A/ NN51V18160A series Fast Page Mode CMOS 1M x 16bit Dynamic RAM M x w D N /a x Preliminary Specification d e s c rip tio n The NN51V16160A/18160A series is a high performance CMOS Dynamic Random Access Memory orga­ nized as 1,048,576 words by 16 bits. The NN51V16160A/18160A series is fabricated with advanced CMOS


    OCR Scan     		PDF NN51V16160A/ NN51V18160A 16bit NN51V16160A/18160A 128ms NN51V18 60AXX

    Untitled

    Abstract: No abstract text available
    Text: IB M 0 4 1 8 1 A R L A B IB M 0 4 3 6 1 A R L A B Prelim inary 32K X 36 & 64K X 18 SRAM Features • 32K x 36 or 64K x 18 Organizations • Latched Outputs • 0.5 Micron CMOS Technology • Asynchronous Output Enable and Power Down Inputs • Synchronous Register-Latch Mode of Opera­


    OCR Scan     		PDF 77H9963 0G042Ã IBM04181ARLAB IBM04361ARLAB

    Untitled

    Abstract: No abstract text available
    Text: NN51V4260A series Fast Page Mode CMOS 256KX 16bit Dynamic RAM NPN a Preliminary Specification d e s c rip tio n The NN51V4260A series is a high performance CMOS Dynamic Random Access Memory organized as 262,144 words by 16 bits. The NN51V4260A series is fabricated with advanced CMOS technology and de­


    OCR Scan     		PDF NN51V4260A 256KX 16bit NN51V4260AL 0Q0G57T NNS1V4260A

    Z8070

    Abstract: No abstract text available
    Text: r ^ PIN GRID ARRAY SOCKETS Standard, Long Solder Tail & Low Profile RRËGI-DIPi m _ -m Series 510, 511, 515 • Series 510, 511, & 515 PG A sockets are available in three solder tail lengths: standard, long and low profile. • C hoice o f three low force clips to


    OCR Scan     		PDF ti771 0GD072 Z8070

    Untitled

    Abstract: No abstract text available
    Text: NN5116165A/ NN5118165A series EDO Hyper Page Mode CMOS 1Mx 16bit Dynamic RAM NPN)a( Preliminary Specification d e s c rip tio n The NN5116165A/18165A series is a high performance CMOS Dynamic Random Access Memory orga­ nized as 1,048,576 words by 16 bits. The NN5116165A/18165A series is fabricated with advanced CMOS


    OCR Scan     		PDF NN5116165A/ NN5118165A 16bit NN5116165A/18165A NN5116 65AXX 128ms NN51181

    CH9055A

    Abstract: CH9055
    Text: O CH9055 CHRONTEL PC Clock Generator Features • Generates up to 16 preset frequencies, 4 peripheral clocks, and buffers input reference frequency • Power down, slow down, stop clock, or output enable feature supporting “Green PC” applications • Smooth glitch-free frequency transitions


    OCR Scan     		PDF CH9055 x86-based AV9155 20-pin CH9055 CH9055A 84MHz 16MHz 24MHz CH9055A

    Untitled

    Abstract: No abstract text available
    Text: NN51V18165B series EDO Hyper Page Mode _ _ _ _ CMOS 1M x 16bit Dynamic RAM NPNA' DESCRIPTION The NN51V18165B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN51V18165B series is fabricated with advanced CMOS technology and designed with innovative


    OCR Scan     		PDF NN51V18165B 16bit NN51V18165BL 1005bSD NN51V181

    TUA4300P

    Abstract: No abstract text available
    Text: SIEMENS One-Chip Car Radio 1 Overview 1.1 Application TUA 4300P The TUA 4300P is a one-chip car radio system consist­ ing of AM/FM receiver, AM-up/down conversion, AGC amplifier/demodulator, FM-IF limiter amplifier/demodu­ lator and stereo decoder/noiseblanker.


    OCR Scan     		PDF 4300P 4300P 535b05 fi23SbDS P-LCC-68-1 12x45Â TUA4300P

    Untitled

    Abstract: No abstract text available
    Text: NN51V18160B seriesFast Page Mode CMOS 1M x 16bit Dynam ic RAM NPN>a< DESCRIPTION The NN51V18160B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN51V18160B series is fabricated with advanced CMOS technology and designed with innovative


    OCR Scan     		PDF NN51V18160B 16bit NN51V18160BL 0QQ11CH NN51V181 128ms

    nn5117805

    Abstract: No abstract text available
    Text: NN5117805A series EDO Hyper Page Mode CMOS 2M x 8bit Dynamic RAM Bv w N Preliminary Specification d e s c rip tio n The NN5117805A series is a high performance CMOS Dynamic Random Access Memory organized as 2,097,152 words by 8 bits. The NN5117805A series is fabricated with advanced CMOS technology and de­


    OCR Scan     		PDF NN5117805A NN5117805AL NN5117805AX' 128ms nn5117805

    HN62428P

    Abstract: No abstract text available
    Text: H I TA C H I / L O G I C / A R R A Y S / M E 11 SIE » • M M T b SO B D01 7 73 ñ IBS HN62428 Series- Preliminary - T - H 4 - IS M S ’ 8M 512K x 16-bit and (1M x 8-bit) Mask ROM ■ DESCRIPTION The Hitachi HN62428 Series is an 8-Megabit CMOS Mask


    OCR Scan     		PDF HN62428 16-bit) 16-bit 42-pin 44-lead HN62428) HN62428P

    NN514256

    Abstract: P26SJ-2A6 NNS14256 256Kx4bit
    Text: NN514256 series Fast Page Mode CMOS 256K x 4bit Dynamic RAM DESCRIPTION The NN514256 series is a high performance CMOS Dynamic Random Access Memory organized as 262,144 words by 4 bits. The NN514256 series is fabricated with advanced CMOS technology and designed


    OCR Scan     		PDF NN514256 256Kx NN5142S6 D00D2T0 NN514256XX P26SJ-2A6 NNS14256 256Kx4bit

    Untitled

    Abstract: No abstract text available
    Text: P 7 M-Cfbol 7/92 ^ O D U E H R 1 / \ ß~7V-/3-5l 2225-K Martin Avenue, Santa Clara, CA 95050 FAX C O M P O N E N T S r i . f X J ù~ì^U ' 0-s 408 492-1400 (408)492-1500 10 to 1200 MHz jo -8 Cascadable Amplifier AC1264 (Typical Values) High Gain .


    OCR Scan     		PDF 2225-K AC1264 TGGfl334 GDD0110

    NN511662

    Abstract: No abstract text available
    Text: NN511662 series EDO Hyper Page Mode CMOS 64Kx 16bit Dynamic RAM NPN/A> DESCRIPTION The NN511662 series is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words by 16 bits. The NN511662 series is fabricated with advanced CMOS technology and designed with innovative design tech­


    OCR Scan     		PDF NN511662 16bit NN511662L G0Q153Ö NNS11662 NN511662XX

    PTN hn624017

    Abstract: DP-42 HN624017F-17 HN624017FB-17 HN624017FP-17 HN624017P-17 HN624017TFP-17 Hitachi Scans-001 C1138
    Text: HN624017 Series Preliminary 16M 1M X 16-bit and (2M x 8-bit) M ask ROM • DESCRIPTION The Hitachi HN624017 is a 16-Megabit CMOS Mask Programmable Read Only Memory organized as 1,048,576 x 16-bit and 2,097,152 x 8-bit. The low power consumption of this device makes it ideal for


    OCR Scan     		PDF HN624017 16-bit) 16-Megabit 16-bit 42-pin and44-lead 44-lead PTN hn624017 DP-42 HN624017F-17 HN624017FB-17 HN624017FP-17 HN624017P-17 HN624017TFP-17 Hitachi Scans-001 C1138