12v battery overcharge protection circuit diagram intel
Abstract: fds4410 CMSH3-40 MAX1667* charge inhibited 1N5819 2N7002 MAX1667 MAX1667EAP ac-dc 18V Charger 1n5819 equivalent
Text: 19-1488; Rev 0; 7/99 Chemistry-Independent, Level 2 Smart Battery Charger _Features ♦ Charges Any Battery Chemistry: Li+, NiCd, NiMH, Lead Acid, etc. The MAX1667 is available in a 20-pin SSOP with a 2mm profile height. ♦ Greater than 95% Efficiency
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MAX1667
20-pin
11-Bit
MAX1667
12v battery overcharge protection circuit diagram intel
fds4410
CMSH3-40
MAX1667* charge inhibited
1N5819
2N7002
MAX1667EAP
ac-dc 18V Charger
1n5819 equivalent
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winbond wpce773la0dg
Abstract: VT1702S G1454R41U ICS9LPRS480BKLFT SCD1U25V3KX-GP MMBT3904-4-GP c5696 WPCE773LA0DG 1gp transistor winbond 25x16
Text: 5 4 3 2 SJM50-PU Block Diagram 1 SYSTEM DC/DC Project code: 91.4FC01.001 PCB P/N : 48.4FC01.0SB REVISION : 08256-SB 40 TPS51125 INPUTS OUTPUTS 5V_S5 8A 3D3V_S5(6A) 5V_AUX_S5 DCBATOUT D AMD Giffin CPU S1G2 (35W) Thermal Sensor CLK GEN. SMSC 31 Video RAM 4,5,6,7
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SJM50-PU
4FC01
08256-SB
TPS51125
TPS51124
EMC2103
ICS9LPRS480BKLFT
638-Pin
uFCPGA638
winbond wpce773la0dg
VT1702S
G1454R41U
ICS9LPRS480BKLFT
SCD1U25V3KX-GP
MMBT3904-4-GP
c5696
WPCE773LA0DG
1gp transistor
winbond 25x16
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SI 18751
Abstract: No abstract text available
Text: Product Datasheet August 7, 2007 DC - 12 GHz Discrete power pHEMT TGF2021-08 Key Features and Performance • • • • • • • Frequency Range: DC - 12 GHz > 39 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications
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TGF2021-08
600-1000mA
600mA
1920mA)
TGF2021-08
DC-12
0007-inch
SI 18751
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Untitled
Abstract: No abstract text available
Text: bq24296M SLUSBU3 – FEBRUARY 2014 I2C Controlled 3A Single Cell USB Charger With Narrow VDC Power Path Management and Adjustable Voltage USB OTG 1 Features • • 1 • • • • • • • 90% High Efficiency Switch Mode 3A Charger 3.9V-6.2V Single Input USB-compliant Charger
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bq24296M
100mA,
150mA,
500mA,
900mA,
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GP200AAHC
Abstract: No abstract text available
Text: Data Sheet Model No.: GP200AAHC Fast Charge Charge control required Voltage (V) 1.6 Type : Rechargeable Nickel Metal Hydride Cylindrical Cell Nominal Dimension (with Sleeve) : Applications : Recommended discharge current 190 to 5700mA 1.4 Nominal Voltage
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GP200AAHC
5700mA
1900mAh
1920mAh
380mA
190mA
950mA
1900mA
950mA
GP200AAHC
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HP-3465A
Abstract: SCR c106 PIN CONFIGURATION SCHEMATIC 1000w power amp scr firing circuit 1000w power amplifier circuit diagram SCR CR106 power supply AMPLIFIER 1800w SCR C103 1000w power amp schematic 4 SCR firing
Text: INSTRUCTION MANUAL FOR 83-470-001 Revision E MODEL SERIAL NUMBER LAMBDA EMI 405 ESSEX ROAD, NEPTUNE, NJ 07753 TEL: 732 922-9300 FAX: (732) 922-9334 TCR 1 Phase OPERATION SYSTEM MANUAL Table of Contents I GENERAL INFORMATION 1.1 1.2 II 3.2 3.3 4 4 5 5 Turn-On Check Out Procedure
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13evice
220VAC
50-60Hz
100VAC
277VAC
50/60Hz
HP-3465A
SCR c106 PIN CONFIGURATION
SCHEMATIC 1000w power amp
scr firing circuit
1000w power amplifier circuit diagram
SCR CR106
power supply AMPLIFIER 1800w
SCR C103
1000w power amp schematic
4 SCR firing
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CMSH3-40
Abstract: No abstract text available
Text: 19-1488; Rev 1; 5/03 Chemistry-Independent, Level 2 Smart Battery Charger _Features ♦ Charges Any Battery Chemistry: Li+, NiCd, NiMH, Lead Acid, etc. In addition to the feature set required for a Level 2 charger, the MAX1667 generates interrupts to signal the host
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MAX1667
MO150.
CMSH3-40
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Untitled
Abstract: No abstract text available
Text: 16Mx64 bits PC133 SDRAM Unbuffered DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16635AT6 Series Revision History Revision No. • 1.1 • • History Draft Date Changed SPD Datas - BYTE127 to FF Changed DC Characteristics-ll - tCK to 15ns from min in Test condition.
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16Mx64
PC133
8Mx16
HYM71V16635AT6
BYTE127
800mA
720mA
1920mA
1760mA
Byte93
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upc 1009
Abstract: No abstract text available
Text: Advance Product Information June 7, 2005 DC - 12 GHz Discrete power pHEMT TGF2021-08 Key Features and Performance • • • • • • • Frequency Range: DC - 12 GHz > 39 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications
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Original
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PDF
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TGF2021-08
600-1000mA
600mA
1920mA)
TGF2021-08
DC-12
0007-inch
upc 1009
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LS 177.22
Abstract: upc 1158 DC-12 TGF2021-08 44074 upc 2561 vd
Text: Product Datasheet August 7, 2007 DC - 12 GHz Discrete power pHEMT TGF2021-08 Key Features and Performance • • • • • • • Frequency Range: DC - 12 GHz > 39 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications
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Original
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PDF
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TGF2021-08
600-1000mA
600mA
1920mA)
TGF2021-08
DC-12
0007-inch
LS 177.22
upc 1158
44074
upc 2561 vd
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oz8681l
Abstract: OZ8681 RT8207AGQW 8681l P0603BDG 92hd80 RTL8111D MEK100-05-DPS RS880M RS880
Text: 1 2 3 4 PCB STACK UP A LAYER LAYER LAYER LAYER LAYER LAYER 1 2 3 4 5 6 5 6 7 8 01 LX89 SYSTEM DIAGRAM : TOP :GND : IN1 : IN2 : VCC : BOT DDR3-SODIMM1 DDR3 channel A DDR3-SODIMM2 CPU THERMAL SENSOR AMD Champlain PAGE 6,7 35mm X 35mm S1G4 Processor DDR3 channel B
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318MHz
5W/35W
ICS9LPRS476AKLFT--
SLG8SP628VTR--
RTM880N-796
RS880
528pin
RTL8111D
VDD10
oz8681l
OZ8681
RT8207AGQW
8681l
P0603BDG
92hd80
RTL8111D
MEK100-05-DPS
RS880M
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NPCE781BA0DX
Abstract: nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U
Text: 5 4 3 2 1 D D Berry DG15 Discrete/UMA Schematics Document Arrandale Intel PCH C C 2010-02-03 REV : A00 DY :None Installed UMA:UMA platform installed PARK:DIS PARK platform installed M96:DIS M96 platform installed VRAM_1G:VRAM 128M*16 installed Colay :Manual modify BOM
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512MB
64Mx16b
C995R
GPIO45
650ms
NPCE781BA0DX
nuvoton NPCE781BA0DX
92HD79B1a5
92HD79B1
NPCE781
TPS51611
NPCE781B
UP7534BRA8
npce781ba
G7922R61U
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pd16m
Abstract: A7B1 A10B1 A8b2 DM4M a0b1 U16-31 A6B1 U32A1 U34-36
Text: Enhanced Memory Systems Inc. Features DM4M32SJ 4Mb x 32 Enhanced DRAM SIMM Product Specification Architecture The DM4M32SJ achieves 4Mb x 32 density by mounting 32 4M x 1 EDRAMs, packaged in 28-pin plastic SOJ packages on both sides of the multilayer substrate. Four buffers
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DM4M32SJ
DM4M32SJ
28-pin
C32-33
pd16m
A7B1
A10B1
A8b2
DM4M
a0b1
U16-31
A6B1
U32A1
U34-36
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MM1414CVBE
Abstract: MM1414C MM1414CV 1 to 4 Cells Lithium Battery Safety IC
Text: PRODUCT SPECIFICATION 1. SCOPE This specification describes the electrical, mechanical and environmental parameters for this battery pack consisting of a Lithium Ion cell 25.9V/ 9600 mAh, with protection safety circuit with gas gauge. 2. Dimensions:
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5000mA
480mA
1920mA
9600mAh
990373D
MM1414CVBE
MM1414C
MM1414CV
1 to 4 Cells Lithium Battery Safety IC
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NPCE781BA0DX
Abstract: NPCE781 NPCE781B DML D01 RT8209E RT8223BGQW RT8209EGQW-GP BCM57780 RT8209EGQW APX9132H
Text: 5 4 3 2 Project code: 91.4HD01.001 PCB P/N : 48.4GX01.0SA PCB 版版 : 09919 SA REVISION : PCB STACKUP SYSTEM JV42-DN Block Diagram DDR3 800/1066/1333MHz CRT AMD Champlain CPU S1G4 45W D 16,17 DDR3 20 TOP LCD VCC 4,5,6,7 HDMI S IN OUT AMD RS880M CPU I/F
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JV42-DN
800/1066/1333MHz
638-Pin
uFCPGA638
4HD01
4GX01
RT8223
800/1066/1333MHz
RT8209E
16X16
NPCE781BA0DX
NPCE781
NPCE781B
DML D01
RT8209E
RT8223BGQW
RT8209EGQW-GP
BCM57780
RT8209EGQW
APX9132H
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PS 229
Abstract: texas 7441 UPC 494 Application Note UPC 574 DC-12 TGF2021-08
Text: Advance Product Information September 19, 2005 DC - 12 GHz Discrete power pHEMT TGF2021-08 Key Features and Performance • • • • • • • Frequency Range: DC - 12 GHz > 39 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications
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Original
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PDF
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TGF2021-08
600-1000mA
600mA
1920mA)
TGF2021-08
DC-12
TGF2021-08l
0007-inch
PS 229
texas 7441
UPC 494 Application Note
UPC 574
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BQ24296MRGER
Abstract: No abstract text available
Text: bq24296M SLUSBU3 – FEBRUARY 2014 I2C Controlled 3A Single Cell USB Charger With Narrow VDC Power Path Management and Adjustable Voltage USB OTG 1 Features • • 1 • • • • • • • 90% High Efficiency Switch Mode 3A Charger 3.9V-6.2V Single Input USB-compliant Charger
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Original
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PDF
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bq24296M
100mA,
150mA,
500mA,
900mA,
BQ24296MRGER
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1n5819 equivalent
Abstract: schottky diode sb 5400 CMSH3-40 fds4410 1N5819 2N7002 MAX1667 MAX1667EAP MAX1647 CS-7 thermistor
Text: 19-1488; Rev 1; 5/03 Chemistry-Independent, Level 2 Smart Battery Charger _Features ♦ Charges Any Battery Chemistry: Li+, NiCd, NiMH, Lead Acid, etc. The MAX1667 is available in a 20-pin SSOP with a 2mm profile height. ♦ Greater than 95% Efficiency
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Original
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PDF
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MAX1667
20-pin
11-Bit
MO150.
1n5819 equivalent
schottky diode sb 5400
CMSH3-40
fds4410
1N5819
2N7002
MAX1667EAP
MAX1647
CS-7 thermistor
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Nippon capacitors
Abstract: 24C02N
Text: HB56U W1672EJN Series, HB56UW1664EJN Series 16777216-word x 72-bit High Density Dynamic RAM Module 16777216-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-643A Z Rev. 1.0 Jun. 9, 1997 Description The HB56UW1672EJN Series, HB56UW1664EJN Series belong to 8-byte DIMM (Dual in-line Memory
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OCR Scan
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PDF
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HB56U
W1672EJN
HB56UW1664EJN
16777216-word
72-bit
64-bit
ADE-203-643A
HB56UW1672EJN
Nippon capacitors
24C02N
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