sd diode sod-323
Abstract: B0520LWS B0530WS B0540WS
Text: B0520LWS B0530WS/B0540WS Surface Mount Schottky Barrier Diode P b Lead Pb -Free Features: SCHOTTKY DIODE 500 mAMPERS 20-40 VOLTS * Low Forward Voltage Drop * Guard Ring Construction forTransient Protection * High Conductance 1 2 Mechanical Data: * Case: SOD-323
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B0520LWS
B0530WS/B0540WS
OD-323
MIL-STD-202,
OD-323
19-May-06
19-May-06
sd diode sod-323
B0520LWS
B0530WS
B0540WS
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PCM80PD02
Abstract: EN61000-3-3 pcm120
Text: AC-DC 50/80/120 Watts xppower.com PCM Series • 4000 VAC Isloation • Low Leakage Current • Single, Dual and Triple Outputs • Worldwide Medical Approvals • CCC Approved PCM80 • Both Line and Neutral Fused • Non-standard Connectors Available Specification
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PCM80)
PCM50:
PCM80:
PCM120:
PCM80/120:
VAC/60Hz
VAC/50Hz
fo-237
19-May-06
PCM80PD02
EN61000-3-3
pcm120
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AT73C239
Abstract: AT73C238 at73c
Text: Hibernate Mode in the AT73C238/AT73C239 1. Scope This application note decribes the hibernate mode for the AT73C238/AT73C239. 1.1 Power Management Reference Documents Table 1-1 gives the references of the documents and their denominations in this document.
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AT73C238/AT73C239
AT73C238/AT73C239.
AT73C239
19-May-06
AT73C238/AT73C239
AT73C238
at73c
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1N4005GP
Abstract: 1N4001GP
Text: 1N4001GP thru 1N4007GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 µA
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1N4001GP
1N4007GP
DO-204AL
DO-41)
MIL-S-19500
2002/95/EC
2002/96/EC
08-Apr-05
1N4005GP
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1N5394
Abstract: 1n5393
Text: 1N5391 thru 1N5399 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC
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1N5391
1N5399
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
DO-204AL,
08-Apr-05
1N5394
1n5393
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Untitled
Abstract: No abstract text available
Text: 1N4245GP thru 1N4249GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat *Glass Encapsulation
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1N4245GP
1N4249GP
MIL-S-19500
2002/95/EC
2002/96/EC
DO-204AL,
J-STD-002B
JESD22-B102D
08-Apr-05
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M100M
Abstract: M100A M100B M100D M100G M100J M100K
Text: M100A thru M100M Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC
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M100A
M100M
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
DO-204AL,
08-Apr-05
M100M
M100B
M100D
M100G
M100J
M100K
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Untitled
Abstract: No abstract text available
Text: GP08A thru GP08J Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat *Glass Encapsulation
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GP08A
GP08J
MIL-S-19500
2002/95/EC
2002/96/EC
DO-204AL
DO-41)
08-Apr-05
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BAS70WS
Abstract: No abstract text available
Text: BAS70WS Surface Mount Schottky Barrier Diode P b Lead Pb -Free Features: * LOW Turn-on Voltage * Fast Switching * PN Junction Guard for Transient and ESD Protection * Designed for Surface Mount Application SCHOTTKY DIODE 70 mAMPERES 70 VOLTS 1 2 Mechanical Data:
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BAS70WS
OD-323,
MIL-STD-202,
OD-323
OD-323
10kHz.
19-May-06
BAS70WS
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DO-204AL
Abstract: GI250-1 GI250-4 JESD22-B102D J-STD-002B
Text: GI250-1 thru GI250-4 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low leakage current ed* t n e Pat *Glass Encapsulation
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GI250-1
GI250-4
MIL-S-19500
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
19-May-06
DO-204AL
GI250-4
JESD22-B102D
J-STD-002B
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GP02-40
Abstract: 20E-3 DO-204AL GP02-20 JESD22-B102D J-STD-002B
Text: GP02-20 thru GP02-40 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifierr FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction ed* t n e Pat *Glass Encapsulation technique is covered by
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GP02-20
GP02-40
MIL-S-19500
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
08-Apr-05
GP02-40
20E-3
DO-204AL
JESD22-B102D
J-STD-002B
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IHLP-2525EZ-01
Abstract: No abstract text available
Text: IHLP-2525EZ-01 Vishay Dale Low Profile, High Current Inductor FEATURES • • • • • Shielded construction Frequency range below 1 MHz Lowest DCR/µH, in this package size Powdered iron composition provides soft saturation RoHS Handles high transient current spikes without hard COMPLIANT
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IHLP-2525EZ-01
08-Apr-05
IHLP-2525EZ-01
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Untitled
Abstract: No abstract text available
Text: F1779 Vishay Roederstein AC-Capacitors, Suppression Capacitors Class X2 AC 275 V Code pos. 9 = 2 (MKT) Dimensions in mm W Max. L Max. Product is completely lead (Pb)-free Product is RoHS compliant P LEAD LENGTH X (mm) CODE POS. A 30+5 B 40+5 C 50+5 E 60+5
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F1779
08-Apr-05
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BAS70WS
Abstract: No abstract text available
Text: BAS70WS Surface Mount Schottky Barrier Diode P b Lead Pb -Free Features: * LOW Turn-on Voltage * Fast Switching * PN Junction Guard for Transient and ESD Protection * Designed for Surface Mount Application Mechanical Data: * Case: SOD-323, * Plastic Material –UL Recognition Flammability Classification 94V-O
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BAS70WS
OD-323,
MIL-STD-202,
OD-323
OD-323
10kHz.
19-May-06
BAS70WS
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Untitled
Abstract: No abstract text available
Text: BYD13DGP thru BYD13MGP New Product Vishay General Semiconductor Avalanche Glass Passivated Junction Rectifier FEATURES • Cavity-free glass-passivated junction • Avalanche surge capability guaranteed • Low forward voltage drop ed* t n e Pat *Glass Encapsulation
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BYD13DGP
BYD13MGP
DO-204AL
DO-41)
MIL-S-19500
2002/95/EC
2002/96/EC
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 2 LOC DIST AD 00 ALL RIGHTS RESERVED. R E V IS IO N S LTR A DESCRIPTION REVISED PER E C 0 - 0 5 - 0 1 5 3 8 0 DATE DWN APVD 19MAY06 SK MS D D BUSHING KEY 2.
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19MAY06
M6250
M6200
19MAYO6
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 2 ALL RIGHTS RESERVED. LOC DIST AD 00 R E V IS IO N S LTR DESCRIPTION DATE ECO 05 0 1 2 2 1 2 DWN 19MAY06 APVD BSV RD D D C C NOTES: INSULATOR: THERMOPLASTIC POLYSTER,
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19MAY06
180ju!
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 - LOC DIST AD 00 ALL RIGHTS RESERVED. R E V IS IO N S P LTR A DESCRIPTION ECO 05 DATE 014280 DWN 19MAY06 APVD BSV MS D D 1 \ BUSH ING/GUARD: METAL BUTTON: THERMOPLASTIC
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19MAY06
17FEB04
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Untitled
Abstract: No abstract text available
Text: 3 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - 2 - ALL RIGHTS RESERVED. LOC DIST AD 00 REVISIONS LTR RECOMMENDED DESCRIPTION REVISED PER E C Q - 0 5 - 0 1 2 2 2 6 DATE DWN APVD 1 9 MAYO6 GS MS PANEL CUTOUT
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19MAY06
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 MAY ,2006- LOC ALL RIGHTS RESERVED. E REVISIONS DIST B P /l\ PACK IN ACCORDANCE WITH AMP SPEC 107-3275 A 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107- 3275
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19MAY06
31MAR2000
19MAYO6
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EX39
Abstract: URM43 500cyclesmin
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. MAY ,2006- LOC ALL RIGHTS RESERVED. E DIST R E V IS IO N S B LTR C NOTES: A PACK IN ACCORDANCE WITH AMP SPEC 107- 3275 A 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107-3275
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19MAYO6
RG58C/U,
41A/U,
URM43,
31MAR2000
EX39
URM43
500cyclesmin
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Untitled
Abstract: No abstract text available
Text: 3 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - 2 - ALL RIGHTS RESERVED. LOC DIST AD 00 REVISIONS LTR RECOMMENDED DESCRIPTION REVISED PER E C Q - 0 5 - 0 1 2 2 2 8 DATE DWN APVD 1 9 MAYO6 GS MS PANEL CUTOUT
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31MAR2000
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - 2 - ALL RIGHTS RESERVED. LOC DIST AD 00 REVISIONS LTR DESCRIPTION REVISED PER E C O - 0 5 - 0 1 2 26 9 DATE DWN APVD 1 9 MAYO6 GS MS NOTES: D D 1. MEETS
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19MAY06
RM0306
RM0305
RM0302
31MAR2000
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9445n
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION MAY ,2006- LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. E DIST R E V IS IO N S B LTR C NOTES: /l\ PACK IN ACCORDANCE WITH AMP SPEC 107-3275 /K 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107- 3275
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19MAYO6
19MAYO6
31MAR2000
9445n
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