Untitled
Abstract: No abstract text available
Text: F214 Rev 19MAY14 EJH–107–01–F–D–TH EJH–120–01–L–D–SM (2,54 mm) .100" EJH SERIES SHROUDED IDC EJECTOR HEADERS SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?EJH (2,54 mm) .100" pitch Mates with:
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19MAY14)
EJH-01
EJH-02
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Untitled
Abstract: No abstract text available
Text: MCS 0402 AT, MCT 0603 AT, MCU 0805 AT, MCA 1206 AT - Professional www.vishay.com Vishay Beyschlag Professional Thin Film Chip Resistors FEATURES • Operating temperature up to 175 °C for 1000 h • Rated dissipation P85 up to 0.4 W for size 1206 • AEC-Q200 qualified
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AEC-Q200
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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DG1408
Abstract: DG1408E
Text: DG1408 www.vishay.com Vishay Siliconix 3.2 Ω, 8-Channel, ± 15 V, +12 V, ± 5 V Precision Multiplexers DESCRIPTION FEATURES The DG1408 is a precision analog multiplexer comprising eight single-ended channels. Built on a new CMOS process, the Vishay Siliconix DG1408 offers low on-resistance of
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DG1408
DG1408
25electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
DG1408E
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Untitled
Abstract: No abstract text available
Text: CHP, HCHP www.vishay.com Vishay Sfernice High Stability Resistor Chips < 0.25 % at Pn at 70 °C during 1000 h Thick Film Technology FEATURES • CHP: Standard passivated version for industrial, professional and military applications Available • Robust terminations
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MIL-R-55342
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si8410DB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () MAX. ID (A) a 0.037 at VGS = 4.5 V 5.7 0.041 at VGS = 2.5 V 5.4 0.047 at VGS = 1.8 V 5.0 0.068 at VGS = 1.5 V 4.2 Qg (TYP.) D 3 1 m m m 1m
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Si8410DB
841xx
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SQ4917EY www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET -60 RDS(on) (Ω) at VGS = -10 V 0.0480 RDS(on) (Ω) at VGS = -4.5 V 0.0612 ID (A) per leg -8 Configuration
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SQ4917EY
AEC-Q101
SQ4917EY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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DG1408E
Abstract: No abstract text available
Text: DG1408 www.vishay.com Vishay Siliconix 3.2 Ω, 8-Channel, ± 15 V, +12 V, ± 5 V Precision Multiplexers DESCRIPTION FEATURES The DG1408 is a precision analog multiplexer comprising eight single-ended channels. Built on a new CMOS process, the Vishay Siliconix DG1408 offers low on-resistance of
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DG1408
DG1408
25electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
DG1408E
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si8487DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si8487DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si1016CX www.vishay.com Vishay Siliconix N- and P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n- and p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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Si1016CX
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si8802DB www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si8802DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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WSBS8518
Abstract: No abstract text available
Text: WSBS8518 Vishay Dale Power Metal Strip 电池分流电阻，超低阻值 100 Ω, 125 μΩ, 与 250 μΩ Power Metal Strip® Battery Shunt Resistor, Very Low Value (100 μΩ, 125 μΩ, and 250 μΩ) 特点 • 功率大体积小 • 专利的加工工艺使电阻具有极低阻值。
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WSBS8518
AEC-Q200
2011/65/EU
2002/95/ECã
2002/95/EC
2011/65/EUã
JS709A
02-Oct-12
WSBS8518
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Untitled
Abstract: No abstract text available
Text: IHLP-1212AE-11 www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Frequency range up to 1.0 MHz • Lowest DCR/ H, in this package size • Handles high transient current spikes without saturation
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IHLP-1212AE-11
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: DG2501, DG2502, DG2503 www.vishay.com Vishay Siliconix 200 Ω, Low Leakage, Low Parasitic and Low Charge Injection, Quad SPST Analog Switches DESCRIPTION FEATURES The DG2501, DG2502, and DG2503 are monolithic quad single-pole single-throw SPST analog switches that
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DG2501,
DG2502,
DG2503
DG2503
DG2501
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Untitled
Abstract: No abstract text available
Text: VS-240U R 60DM16 www.vishay.com Vishay Semiconductors Standard Recovery Diodes (Stud Version), 320 A FEATURES • Diffused diode • Wide current range • High voltage ratings up to 600 V • High surge current capabilities • Stud cathode and stud anode version
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VS-240U
60DM16
DO-205AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si8410DB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) MAX. ID (A) a 0.037 at VGS = 4.5 V 5.7 0.041 at VGS = 2.5 V 5.4 0.047 at VGS = 1.8 V 5.0 0.068 at VGS = 1.5 V 4.2 Qg (TYP.) D 3 1 m m m 1m
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Si8410DB
841xx
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: WSBS8518 Vishay Dale パワーメタルストリップ バッテリーシャント抵抗器 超低抵抗 100 µ Ω125 µ Ω、および 250 µ Ω 特徴 • 出力対抵抗器サイズの比率が大幅に向上 • 当社独自の加工技術により、抵抗値を大幅に低
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WSBS8518
AEC-Q200
g/1000
2002/95/EC
2011/65/EU
JS709A
02-Oct-12
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IHLP-1212AB-11
Abstract: No abstract text available
Text: IHLP-1212AB-11 www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Excellent DC/DC energy storage up to 1 MHz to 2 MHz. Filter inductor applications up to SFR see table below • Lowest DCR/ H, in this package size
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IHLP-1212AB-11
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
IHLP-1212AB-11
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Untitled
Abstract: No abstract text available
Text: IHLP-1212BZ-11 www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Excellent DC/DC energy storage up to 1 MHz to 2 MHz. Filter inductor applications up to SFR see table below • Lowest DCR/ H, in this package size
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IHLP-1212BZ-11
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si8497DB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si8497DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-10BQ030PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1.0 A FEATURES • Small foot print, surface mountable • Very low forward voltage drop Cathode Anode • High frequency operation • Guard ring for enhanced ruggedness and long term
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VS-10BQ030PbF
J-STD-020,
VS-10BQ030PbF
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: WSBS8518 www.vishay.com Vishay Dale Power Metal Strip Battery Shunt Resistor, Very Low Value 100 , 125 μ, and 250 μ FEATURES • High power to resistor size ratio • Proprietary processing technique produces extremely low resistance values
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WSBS8518
AEC-Q200
g/1000
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiA466EDJ www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) a 0.0095 at VGS = 10 V 25 0.0111 at VGS = 6 V 25 0.0130 at VGS = 4.5 V 25 VDS (V) 20 Qg (TYP.) 6.3 nC S 4 05 2. m m m 3 G Bottom View 5m
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SiA466EDJ
SC-70
SC-70-6L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: RPH 100 www.vishay.com Vishay Sfernice Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES • • • • • • • High power rating Low thermal radiation of the case Wide ohmic value range Easy mounting High overload capabilities
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-10BQ030PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1.0 A FEATURES • Small foot print, surface mountable • Very low forward voltage drop Cathode Anode • High frequency operation • Guard ring for enhanced ruggedness and long term
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VS-10BQ030PbF
J-STD-020,
VS-10BQ030PbF
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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