IR 50SQ100
Abstract: vishay Axial DO-204AR VS-50SQ100 VS-50SQ080TR ir 50sq080
Text: VS-50SQ. Series, VS-50SQ.-M3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 5 A FEATURES • 175 °C TJ operation • Low forward voltage drop Cathode • High frequency operation Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-50SQ.
DO-204AR
DO-204AR
2002/95/EC
11-Mar-11
IR 50SQ100
vishay Axial DO-204AR
VS-50SQ100
VS-50SQ080TR
ir 50sq080
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vishay Axial DO-204AR
Abstract: No abstract text available
Text: VS-50SQ.G Series, VS-50SQ.G-M3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 5 A FEATURES • 175 °C TJ operation • Low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-50SQ.
DO-204AR
DO-204AR
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
vishay Axial DO-204AR
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vishay Axial DO-204AR
Abstract: No abstract text available
Text: VS-50SQ.G Series, VS-50SQ.G-M3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 5 A FEATURES • 175 °C TJ operation • Low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-50SQ.
DO-204AR
DO-204AR
2002/95/EC
11-Mar-11
vishay Axial DO-204AR
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Untitled
Abstract: No abstract text available
Text: SiHG24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation Two • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V 0.145 Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) •
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SiHG24N65E
2002/95/EC
O-247AC
11-Mar-11
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DAP 07
Abstract: D1564 LLP1010-6M
Text: VBUS054DD-HS4 www.vishay.com Vishay Semiconductors 4-Line BUS-Port ESD Protection FEATURES • Ultra compact LLP1010-5L package 5 • Low package height < 0.4 mm 4 • 4-line USB ESD-protection 6 • Low leakage current • Low load capacitance CD = 0.8 pF
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VBUS054DD-HS4
LLP1010-5L
2002/95/EC
2002/96/EC
VBUS054DD-HS4
2002/95/EC.
2011/65/EU.
JS709A
DAP 07
D1564
LLP1010-6M
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Untitled
Abstract: No abstract text available
Text: SQM25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 150 RDS(on) () at VGS = 10 V 0.052 ID (A) • TrenchFET Power MOSFET 25
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SQM25N15-52
AEC-Q101
2002/95/EC
O-263
O-263
SQM25N15-52-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation • 10 MHz to 4 GHz Frequency Range • Zero Bias Schottky • Large Signal Power Detector, greater than -10 dBm • +30 dBm Max Input Signal • 100 pF Video Capacitance • Operating Temperature: -20°C to 70°C
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CPDETLS-4000
19-Sep-11
549-CPDETLS-4000
CPDETLS-4000
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IR 50SQ100
Abstract: ir 50sq080 vs50sq100 vishay Axial DO-204AR vs-50sq100tr VS-50SQ vs-50sq100
Text: VS-50SQ. Series, VS-50SQ.-M3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 5 A FEATURES • 175 °C TJ operation • Low forward voltage drop Cathode • High frequency operation Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-50SQ.
DO-204AR
DO-204AR
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
IR 50SQ100
ir 50sq080
vs50sq100
vishay Axial DO-204AR
vs-50sq100tr
VS-50SQ
vs-50sq100
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ir 80sQ045
Abstract: VS-80SQ045 80sq040 80SQ045 80SQ03 vishay Axial DO-204AR vs80sq040 VS-80S ir 80sq040 DO-204AR Package
Text: VS-80SQ. Series, VS-80SQ.-M3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 8 A FEATURES • 175 °C TJ operation • Low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-80SQ.
DO-204AR
DO-204AR
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
ir 80sQ045
VS-80SQ045
80sq040
80SQ045
80SQ03
vishay Axial DO-204AR
vs80sq040
VS-80S
ir 80sq040
DO-204AR Package
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90SQ045TR
Abstract: VS-90SQ VS-90SQ045TR vishay Axial DO-204AR VS-90SQ040 DO204AR
Text: VS-90SQ. Series, VS-90SQ.-M3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 9 A FEATURES • 150 °C TJ operation • Low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-90SQ.
DO-204AR
DO-204AR
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
90SQ045TR
VS-90SQ
VS-90SQ045TR
vishay Axial DO-204AR
VS-90SQ040
DO204AR
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Untitled
Abstract: No abstract text available
Text: VS-MBR340, VS-MBR340-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-MBR340,
VS-MBR340-M3
2002/95/EC
DO-201AD
VS-MBR340.
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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31DQ10TR
Abstract: VS-31DQ10
Text: VS-31DQ09, VS-31DQ09-M3, VS-31DQ10, VS-31DQ10-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3.3 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy
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VS-31DQ09,
VS-31DQ09-M3,
VS-31DQ10,
VS-31DQ10-M3
DO-201AD
2002/95/EC
11-Mar-11
31DQ10TR
VS-31DQ10
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Untitled
Abstract: No abstract text available
Text: VS-80SQ. Series, VS-80SQ.-M3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 8 A FEATURES • 175 °C TJ operation • Low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-80SQ.
DO-204AR
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-31DQ09, VS-31DQ09-M3, VS-31DQ10, VS-31DQ10-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3.3 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy
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VS-31DQ09,
VS-31DQ09-M3,
VS-31DQ10,
VS-31DQ10-M3
2002/95/EC
DO-201AD
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: SiHF30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Generation Two
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SiHF30N60E
2002/95/EC
O-220
11-Mar-11
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DAP 07
Abstract: No abstract text available
Text: VBUS054DD-HS4 www.vishay.com Vishay Semiconductors 4-Line BUS-Port ESD Protection FEATURES • Ultra compact LLP1010-5L package 5 • Low package height < 0.4 mm 4 • 4-line USB ESD-protection 6 • Low leakage current • Low load capacitance CD = 0.8 pF
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VBUS054DD-HS4
LLP1010-5L
2002/95/EC
2002/96/EC
VBUS054DD-HS4
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
DAP 07
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Untitled
Abstract: No abstract text available
Text: VS-80SQ. Series, VS-80SQ.-M3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 8 A FEATURES • 175 °C TJ operation • Low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical
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Original
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VS-80SQ.
DO-204AR
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: F O - 551 I I - C 4 3 À. HONEYWELL P A R T N U MBE R .417±.010 R EV DOCUMENT 8 0081848 2X 0.172 HOLE CHECK C H A N G E D BY 19SEP11 CMH NMN BZV6-2RQ9 1.00 2.125±.030 ACROSS FLATS B B 0.50 X .18 WIDE HARDENED STEEL ROLLER 14NPT THREAD 2.953±.060 OPERATING
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19SEP11
14NPT
240VAC
15JAN58
28JAN58
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Untitled
Abstract: No abstract text available
Text: 4 F O - 551 I I - C 3 À HONEYWELL P A R T N U MBE R REV DOCUMENT 6 0081848 CHECK C H A N G E D BY 19SEP11 CMH NMN BZV6-2RQ39 B B N O TES 1 - 3X 6 - 32 UNC X .219 TERMINAL SCREW AND CUP WASHER RELEASE NO: PR-8488 2 - SEALED FOR NEMA 1 AND IP 40 RATING. ELECTRICAL
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19SEP11
BZV6-2RQ39
PR-8488
-L74-
29FEB80
11MAR80
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Untitled
Abstract: No abstract text available
Text: F O - 551 I I - C 4 3 À. HONEYWELL P A R T N U MB E R .417±.010 2X 0.172 HOLE R EV DOCUMENT 8 0081848 CHECK C H A N G E D BY 19SEP11 CMH NMN BZV6-2RQ81 2.125±.030 B B 0.50 X .19 WIDE CORROSION RESISTANT STEEL ROLLER 2.953±.060 OPERATING POSITION 1 /2 -1 4 NPT THREAD
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19SEP11
BZV6-2RQ81
SR7398
1/4A-250
240VAC
29MAR58
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Untitled
Abstract: No abstract text available
Text: F O - 551 I I - C 4 3 À. HONEYWELL P A R T N U MB E R .417±.010 2X 0.172 HOLE R EV DOCUMENT 8 0081848 CHECK C H A N G E D BY 19SEP11 CMH NMN BZV6-2RQ8 1.00 2.125±.030 ACROSS FLATS B B .015 MAX PRETRAVEL 0.50 X .19 WIDE HARDENED STEEL ROLLER HEX, NUT .750 ACROSS FLATS.
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19SEP11
240VAC
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Untitled
Abstract: No abstract text available
Text: 4 F O - 551 I I - C 3 À. HONEYWELL PART NUMBER ,417±.010 2X0.172 HOLE BZV6-2RQ REV DOCUMENT 8 0081848 CHECK C H A N G E D BY 19SEP11 CMH NMN 1.00 2.125±.030 A CRO SS FLATS 1.625 B B HARDENED STEEL PLUNGER HEX, NUT .750 A C R O SS FLATS 1/2-14 NPT THREAD
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19SEP11
SR-7228
15JAN58
28JAN58
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Untitled
Abstract: No abstract text available
Text: 4 FO-551 I I-C 3 HONEYWELL PART NUMBER BZV6-2RQ2 , LIGHT HEX, NUT .500 ACROSS FLATS À 417±.010 ,135±.030— — .58 REV DOCUMENT 9 0081848 CHECK C H A N G E D BY 19SEP11 CMH NMN 1.00 ACROSS FLATS 2.125±.030 -2 X 0 .1 7 2 HOLE ROLLER LEVER MAY BE POSITIELY LOCKED AT
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FO-551
19SEP11
240VAC
28JAN58
21JAN58
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Untitled
Abstract: No abstract text available
Text: 4 F O - 551 I I - C 3 HONEYWELL P A R T N U MBE R BZV6-2RQ62 À .417±.010 LIGHT HEX NUT .500 ACROSS FLATS R EV DOCUMENT 9 0081848 CHECK C H A N G E D BY 19SEP11 CMH NMN 2.125±.030 2X 0.172 HOLE B LEVER IS SHOWN IN ITS FREE POSITION AT ONE EXTREME OF ITS ADJUSTABLE
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BZV6-2RQ62
19SEP11
240VAC
11JAN60
14JAN60
SR8728
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