Untitled
Abstract: No abstract text available
Text: P REVISED PER ECO 11 005033 19APR11 RK HMR P P
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19APR11
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TO-277
Abstract: ss12p3
Text: New Product SS12P2L, SS12P3L Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Guardring for overvoltage protection
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SS12P2L,
SS12P3L
AEC-Q101
2002/95/EC
2002/96/EC
J-STD-020,
O-277A
2011/65/EU
2002/95/EC.
TO-277
ss12p3
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TO-277
Abstract: V810 to-277A
Text: New Product V8P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A TMBS eSMP® Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement
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V8P10
O-277A
AEC-Q101
2002/95/EC
2002/96/EC
J-STD-020,
2011/65/EU
2002/95/EC.
2011/65/EU.
TO-277
V810
to-277A
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Untitled
Abstract: No abstract text available
Text: New Product S1PB thru S1PM Vishay General Semiconductor High Current Density Surface Mount Glass Passivated Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated chip junction eSMP Series
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AEC-Q101
J-STD-020,
DO-220AA
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
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is s106 diode
Abstract: No abstract text available
Text: New Product SS10P5, SS10P6 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifier FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Guardring for overvoltage protection
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SS10P5,
SS10P6
J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
O-277A
2011/65/EU
2002/95/EC.
is s106 diode
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SS5P4H
Abstract: No abstract text available
Text: New Product SS5P3, SS5P4 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Low forward voltage drop, low power losses
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Original
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PDF
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AEC-Q101
2002/95/EC
2002/96/EC
J-STD-020,
O-277A
2011/65/EU
2002/95/EC.
2011/65/EU.
SS5P4H
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MSS1P6HM3
Abstract: No abstract text available
Text: New Product MSS1P5, MSS1P6 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 0.65 mm eSMP Series • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency
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AEC-Q101
2002/95/EC
2002/96/EC
J-STD-020,
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
MSS1P6HM3
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J-STD-002
Abstract: V12P10
Text: New Product V12P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A TMBS eSMP® Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automatic placement
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V12P10
AEC-Q101
O-277A
2002/95/EC
2002/96/EC
J-STD-020,
11-Mar-11
J-STD-002
V12P10
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MSS1P6HM3
Abstract: J-STD-002
Text: New Product MSS1P5, MSS1P6 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 0.65 mm eSMP Series • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency
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J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
11-Mar-11
MSS1P6HM3
J-STD-002
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AXP 188
Abstract: btp 128 550 BDP 162 DO-220AA J-STD-002 AXP 209 btp 129 MARKIN CODE 324 arp
Text: New Product TPSMP6.8 thru TPSMP43A Vishay General Semiconductor High Power Density Surface Mount PAR Transient Voltage Suppressors FEATURES ® • Junction passivation optimized design passivated anisotropic rectifier technology eSMP Series • TJ = 185 °C capability suitable for high reliability
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TPSMP43A
DO-220AA
J-STD-020,
11-Mar-11
AXP 188
btp 128 550
BDP 162
DO-220AA
J-STD-002
AXP 209
btp 129
MARKIN CODE
324 arp
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J-STD-002
Abstract: MSS1P2L MicroSMP
Text: New Product MSS1P2L, MSS1P3L Vishay General Semiconductor Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 0.65 mm eSMP Series • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency
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J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
11-Mar-11
J-STD-002
MSS1P2L MicroSMP
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SS10PH10
Abstract: J-STD-002 SS10PH9
Text: New Product SS10PH9, SS10PH10 Vishay General Semiconductor High Current Density Surface Mount High Voltage Schottky Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Guardring for overvoltage protection
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SS10PH9,
SS10PH10
J-STD-020
AEC-Q101
O-277A
2002/95/EC
2002/96/EC
11-Mar-11
SS10PH10
J-STD-002
SS10PH9
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J-STD-002
Abstract: No abstract text available
Text: New Product SS5P3, SS5P4 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Low forward voltage drop, low power losses
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Original
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PDF
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AEC-Q101
O-277A
J-STD-020,
2002/95/EC
2002/96/EC
11-Mar-11
J-STD-002
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J-STD-002
Abstract: No abstract text available
Text: New Product SS3P3L, SS3P4L Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Low forward voltage drop, low power losses
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Original
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PDF
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AEC-Q101
O-277A
J-STD-020,
2002/95/EC
2002/96/EC
11-Mar-11
J-STD-002
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DO-220AA
Abstract: J-STD-002
Text: New Product SS1P3, SS1P4 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement eSMP Series • Low forward voltage drop, low power losses
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Original
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PDF
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J-STD-020,
AEC-Q101
DO-220AA
2002/95/EC
2002/96/EC
DO-220AA
11-Mar-11
J-STD-002
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J-STD-002
Abstract: No abstract text available
Text: New Product SS3P5L, SS3P6L Vishay General Semiconductor Low VF High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Low forward voltage drop, low power losses
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PDF
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AEC-Q101
O-277A
J-STD-020,
2002/95/EC
2002/96/EC
11-Mar-11
J-STD-002
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DO-220AA
Abstract: J-STD-002 S1PB
Text: New Product S1PB thru S1PM Vishay General Semiconductor High Current Density Surface Mount Glass Passivated Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated chip junction eSMP Series
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J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
DO-220AA
11-Mar-11
DO-220AA
J-STD-002
S1PB
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DFSDM
Abstract: SAM9M10 K 2141 AC97 ARM926EJ-S AT91SAM ISO7816 NBC 3111 hc 541 rfid reader id-20
Text: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU • Memories • • • • – DDR2 Controller 4-bank DDR2/LPDDR, SDR/LPSDR – External Bus Interface supporting 4-bank DDR2/LPDDR, SDR/LPSDR, Static
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ARM926EJ-STM
64-KByte
6355C
19-Apr-11
DFSDM
SAM9M10
K 2141
AC97
ARM926EJ-S
AT91SAM
ISO7816
NBC 3111
hc 541
rfid reader id-20
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sod-80 zener diode color band
Abstract: zener diode color codes zener diodes color codes TZMC10 TZMC11 TZMC12 TZMC13 TZMC15 TZMC16 MINI-MELF DIODE BLACK CATHODE
Text: TZM-Series Vishay Semiconductors Small Signal Zener Diodes Features • • • • • • • • Very sharp reverse characteristic Low reverse current level Very high stability Low noise TZMC - VZ-tolerance ± 5 % TZMB - VZ-tolerance ± 2 % AEC-Q101 qualified
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AEC-Q101
2002/95/EC
2002/96/EC
OD-80
GS08/2
GS18/10K
10K/box
11-Mar-11
sod-80 zener diode color band
zener diode color codes
zener diodes color codes
TZMC10
TZMC11
TZMC12
TZMC13
TZMC15
TZMC16
MINI-MELF DIODE BLACK CATHODE
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Untitled
Abstract: No abstract text available
Text: New Product VSSA210 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES • Low profile package TMBS • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop
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VSSA210
J-STD-020,
2002/95/EC
2002/96/EC
DO-214AC
2002/95/EC.
2011/65/EU.
JS709A
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MIL-T-10727
Abstract: No abstract text available
Text: 4 2 TH IS DRAWING IS U N P U B LIS H E D . COPYRIGHT REUEASED FOR PUBUICATION - - 50 AUU RIGHTS RESERVED. By - R EVISIO N S LTR E1 1 D ESC R IPTIO N REVISED PER ECO -00 82 2 8 DATE DWN APVD 19APR1 JR PD D C O N T IN U O U S STR IP ON REE LS . 0 0 0 0 8 0 MIN TIN PER M I L - T - 1 0 7 2 7
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19APR1
MIL-T-10727
25SEP2007
MIL-T-10727
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TE CONNECTIVITY. 2011 LOC REVISIONS DIST D LTR DESCRIPTION ECR-1 1 - 0 0 8 2 8 8 DATE DWN APVD 19APR1 AW WK DATE CODE TE GO ROB EDGE 3 3 .6 9 -5 PL .78 .85 .905 'P 0 .4 0
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19APR1
05JUN2006
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gree
Abstract: No abstract text available
Text: THIS D R A WI N G IS UNPUBLISHED. RELEASED ALL COPYRIGHT FOR PUBLICATION RIGHTS LOC AR RESERVED. REVISIONS DIST 00 LTR D3 . 19 6 P L A CE S DESCRIPTION DWN DATE HMR 19APR11 RK REVISED PER ECO-11-005294 APVD POSITION 2 MATERIAL: H OUS I NG - HI GH TEMP T H E R M O P L A S T I C , B L A C K , U L 9 4 V - 0
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ECO-11-005294
19APR11
27JULY2005
27JULY2005
S-6339I9
gree
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Untitled
Abstract: No abstract text available
Text: [ I L°c G | DIST 14- pR ^V yC N G MAC?E IN T H IR D A N Ç L E P R O J E C T IO N t H I S Ö k A W fN G IS U N P U B L IS H E D . C o p y r ig h t — R E V IS I O N S & £ L 0 A # g : l> F < m P U B L I C A T I O N BY p F /ZO NE LTR M1 DESCRIPTION 19APR11
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ECO-11-005294
19APR11
8-34541-S
1x2-3454
-3454-M
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