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    19DEC2002 Search Results

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    Catalog Datasheet MFG & Type Document Tags PDF

    M27W032

    Abstract: No abstract text available
    Text: M27W032 32 Mbit 2Mb x16 3V Supply FlexibleROM Memory FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 90ns at VCC = 3.0 to 3.6V


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    M27W032 110ns 0020h TSOP48 888Eh M27W032 PDF

    Untitled

    Abstract: No abstract text available
    Text: M27W032 32 Mbit 2Mb x16 3V Supply FlexibleROM Memory PRELIMINARY DATA FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 90ns at VCC = 3.0 to 3.6V


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    M27W032 110ns 0020h TSOP48 888Eh PDF

    Untitled

    Abstract: No abstract text available
    Text: M27W032 32 Mbit 2Mb x16 3V Supply FlexibleROM Memory PRELIMINARY DATA FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 90ns at VCC = 3.0 to 3.6V


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    M27W032 110ns 0020h TSOP48 888Eh PDF

    Untitled

    Abstract: No abstract text available
    Text: M27W032 32 Mbit 2Mb x16 3V Supply FlexibleROM Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 90ns at VCC = 3.0 to 3.6V


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    M27W032 110ns 0020h 888Eh TSOP48 PDF

    VFBGA60

    Abstract: 7FF00
    Text: M58WR128ET M58WR128EB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


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    M58WR128ET M58WR128EB 54MHz 100ns VFBGA60 VFBGA60 7FF00 PDF

    VFBGA60

    Abstract: CR10 M58WR128EB M58WR128ET
    Text: M58WR128ET M58WR128EB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


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    M58WR128ET M58WR128EB 54MHz 100ns VFBGA60 VFBGA60 CR10 M58WR128EB M58WR128ET PDF

    Untitled

    Abstract: No abstract text available
    Text: REV. 05 DATE 10-03-99 17-12-01 DESCRI PT I ON Temperature range -55C inslead of -25C CONVERSION PDM - BEC 9.3573 K.N. NL BY C'K'D' W IR IN G FACE - ID < O _l t— EC LU — LU O CL or Q IU Q. 3 ID — CE 13 LJ CAT. NUMBER U T G 6 104SN UTG6125SN UTG6128SN


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    104SN UTG6125SN UTG6128SN UTG6U12SN UTG6202 UTG622 004DRAWING 19-Dec-2002 PDF

    Untitled

    Abstract: No abstract text available
    Text: REV. DATE A I— — DESCRIPTION 17-12-01 BY CONVERSION PDM - BEC 9.357] C'K'D' NL U J< O _l CE LU LU O UTG6 104PN UTG6125PN CL 3 O CE 13 LU - — < Q CE U LU Q_ L J — UTG6128PN U TG6U12PN UTG61619PN U TG 61823PN UTG62028P UTG622 - z> cc - ce LU - O CD LU CE <


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    104PN UTG6125PN UTG6128PN TG6U12PN UTG61619PN 61823PN UTG62028P UTG622 L94-V0 19-Dec-2002 PDF

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION LOC DIST AF 50 ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. REVISIONS LTR DESCRIPTION N DWN DATE REVISED PER 0 G 3 A - 0 0 1 6 - 0 3 14FEB03 APVD JR GP D D C O N T IN U O U S 1 -.267-


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    0G3A-0016-03 14FEB03 19DEC2002 31MAR2000 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 3 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 2 LOC DIST AF 50 ALL RIGHTS RESERVED. R EV IS IO N S LTR P1 1 D C O N T IN U O U S STANDARD '2' -.2 67- REVERSE 4 R E E LIN G O FF TO P OF R EEL W IR E B A R R E L UP


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    14NOV05 19DEC2002 19DEC2002 31MAR2000 PDF