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    19N60C5 Search Results

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    19N60C5 Price and Stock

    IXYS Corporation IXKC19N60C5

    MOSFET N-CH 600V 19A ISOPLUS220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXKC19N60C5 Tube 50
    • 1 -
    • 10 -
    • 100 $4.126
    • 1000 $4.126
    • 10000 $4.126
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    TME IXKC19N60C5 1
    • 1 $5.03
    • 10 $3.59
    • 100 $3.59
    • 1000 $3.59
    • 10000 $3.59
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    New Advantage Corporation IXKC19N60C5 408 1
    • 1 -
    • 10 -
    • 100 $13.41
    • 1000 $12.52
    • 10000 $12.52
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    IXYS Integrated Circuits Division IXKC19N60C5

    MOSFET DIS.19A 600V N-CH ISOPLUS220 COOLMOS THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXKC19N60C5 508
    • 1 $10.04366
    • 10 $10.04366
    • 100 $9.1306
    • 1000 $9.1306
    • 10000 $9.1306
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    19N60C5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXKC 19N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 19 A VDSS = 600 V RDS on max = 0.125 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original     		PDF 19N60C5 ISOPLUS220TM E72873

    19n60

    Abstract: No abstract text available
    Text: IXKC 19N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 19 A VDSS = 600 V RDS on) max = 0.125 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original     		PDF 19N60C5 ISOPLUS220TM E72873 20090209b 19n60

    19n60

    Abstract: No abstract text available
    Text: IXKC 19N60C5 Advanced Technical Information ID25 = 19 A VDSS = 600 V RDS on max = 0.125 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM


    Original     		PDF 19N60C5 ISOPLUS220TM E72873 19n60

    19n60

    Abstract: No abstract text available
    Text: IXKC 19N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 19 A VDSS = 600 V RDS on max = 0.125 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original     		PDF 19N60C5 ISOPLUS220TM E72873 19n60

    19n60

    Abstract: No abstract text available
    Text: IXKC 19N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 19 A VDSS = 600 V RDS on) max = 0.125 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original     		PDF 19N60C5 ISOPLUS220TM E72873 20090209b 19n60

    19n60

    Abstract: 19n60c5 E72873
    Text: IXKC 19N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 19 A VDSS = 600 V RDS on) max = 0.125 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original     		PDF 19N60C5 ISOPLUS220TM E72873 20080523a 19n60 19n60c5 E72873

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2