SI4310
Abstract: Si4310BDY
Text: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21
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Si4310BDY
2002/95/EC
SO-14
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SI4310
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Untitled
Abstract: No abstract text available
Text: Si4340DY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
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Si4340DY
2002/95/EC
SO-14
Si4340DY-T1-E3
Si4340DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Si4340DDY
Abstract: No abstract text available
Text: Si4340DDY Vishay Siliconix Dual N-Channel 20 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () 0.0085 at VGS = 10 V 0.0115 at VGS = 4.5 V 0.0070 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A)a 14.8 12.8
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Si4340DDY
2002/95/EC
SO-14
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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5499
Abstract: 71193
Text: Package Information Vishay Siliconix SOIC NARROW : 14ĆLEAD MILLIMETERS 14 13 12 11 10 9 Dim A A1 B C D E e H L Ø 8 E 2 3 4 5 6 7 D A 0.25 (GAGE PLANE) 1 H INCHES Min Max Min Max 1.35 1.75 0.053 0.069 0.10 0.20 0.004 0.008 0.38 0.51 0.015 0.020 0.18 0.23
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14LEAD
T-05766--Rev.
19-Sep-05
08-Apr-05
5499
71193
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Untitled
Abstract: No abstract text available
Text: ST7263B LOW SPEED USB 8-BIT MCU FAMILY WITH UP TO 32K FLASH/ROM, DFU CAPABILITY, 8-BIT ADC, WDG, TIMER, SCI & I²C Memories – 4, 8, 16 or 32 Kbytes Program Memory: High Density Flash HDFlash , FastROM or ROM with Readout and Write Protection – In-Application Programming (IAP) and In-Circuit programming (ICP)
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ST7263B
128byte
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72f63
Abstract: 1165 JRC NE555 pulse generator SDIP32-SO24 IT12223 Loctite 2642 wd 969 usb STMicroelectronics trace code st72f63b Electronic ballast HID
Text: ST7263B LOW SPEED USB 8-BIT MCU FAMILY WITH UP TO 32K FLASH/ROM, DFU CAPABILITY, 8-BIT ADC, WDG, TIMER, SCI & I²C Memories – 4, 8, 16 or 32 Kbytes Program Memory: High Density Flash HDFlash , FastROM or ROM with Readout and Write Protection – In-Application Programming (IAP) and In-Circuit programming (ICP)
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ST7263B
128byte
72f63
1165 JRC
NE555 pulse generator
SDIP32-SO24
IT12223
Loctite 2642
wd 969 usb
STMicroelectronics trace code st72f63b
Electronic ballast HID
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DO204AC
Abstract: DO-204AC RGP15M rgp15g RGP15J
Text: RGP15A thru RGP15M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV VRRM IFSM trr IR VF Tj max. 1.5 A 50 V to 1000 V 50 A 150 ns, 250 ns, 500 ns 5.0 µA 1.3 V 175 °C ted* n e t Pa
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RGP15A
RGP15M
DO-204AC
DO-15)
MIL-S-19500
DO-204AC,
19-Sep-05
DO204AC
DO-204AC
RGP15M
rgp15g
RGP15J
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Untitled
Abstract: No abstract text available
Text: DG300B, DG301B, DG302B, DG303B Vishay Siliconix CMOS Analog Switches DESCRIPTION FEATURES The DG300B, DG303B family of monolithic CMOS switches feature three switch configuration options SPST, SPDT, and DPST for precision applications in communications,
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DG300B,
DG301B,
DG302B,
DG303B
DG303B
PLUS-40
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: BA157GP thru BA159GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV VRRM IFSM trr IR VF Tj max. 1.0 A 400 V to 1000 V 20 A 150 ns, 250 ns, 500 ns 5.0 µA 1.3 V 175 °C d* e t n Pate
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BA157GP
BA159GP
DO-204AL
DO-41)
MIL-S-19500
DO-204AL
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: RGP15A thru RGP15M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV VRRM IFSM trr IR VF Tj max. 1.5 A 50 V to 1000 V 50 A 150 ns, 250 ns, 500 ns 5.0 µA 1.3 V 175 °C ted* n e t Pa
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RGP15A
RGP15M
DO-204AC
DO-15)
MIL-S-19500
DO-204AC,
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4340DY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
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Si4340DY
2002/95/EC
SO-14
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: DG300B, DG301B, DG302B, DG303B Vishay Siliconix CMOS Analog Switches DESCRIPTION FEATURES The DG300B, DG303B family of monolithic CMOS switches feature three switch configuration options SPST, SPDT, and DPST for precision applications in communications,
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DG300B,
DG301B,
DG302B,
DG303B
DG303B
PLUS-40
2011/65/EU
2002/95/EC.
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: ST7263B LOW SPEED USB 8-BIT MCU FAMILY WITH UP TO 32K FLASH/ROM, DFU CAPABILITY, 8-BIT ADC, WDG, TIMER, SCI & I²C • ■ ■ ■ ■ Memories – 4, 8, 16 or 32 Kbytes Program Memory: High Density Flash HDFlash , FastROM or ROM with Readout and Write Protection
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ST7263B
128byte
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ignition module
Abstract: RGP02-17E RGP02-17 rgp02
Text: RGP02-12E thru RGP02-20E Vishay General Semiconductor Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 0.5 V VRRM 1200 V to 2000 V IFSM 20 A trr 300 ns IR 5.0 µA Tj max. 175 °C DO-204AL (DO-41) Features Mechanical Data • Superectifier structure for High Reliability
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RGP02-12E
RGP02-20E
DO-204AL
DO-41)
MIL-S-19500
DO-204AL,
UL-94V-0
J-STD-002B
JESD22-B102D
ignition module
RGP02-17E
RGP02-17
rgp02
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 2 LOC ALL RIGHTS RESERVED. FB REVISIONS DIST 00 LTR A DESCRIPTION REVISED ECR —05 —001 799 D DATE DWN APVD 19SEP05 c.w S.Y AS SHOWN : - 6 PITCH - ±0.1
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19SEP05
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 4 TH IS DRAWING IS U N P U B LIS H E D . RELEASED FOR PUBLICATION A L L RIGHTS COPYRIGHT 2 3 — - LOC RESERVED. AD BY TYCO ELECTRONICS CORPORATION. REVISIONS □ IS T 00 LTR D E SC RIPTIO N H POSITION # PH OS APVD JDP DD 19SEP05 REVISED PER EC 0 S 1 2 - 0 2 7 3 - 0 5
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19SEP05
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Untitled
Abstract: No abstract text available
Text: 4 TH IS DRAWING IS U N P U B LIS H E D . RELEASED FOR PUBLICATION A L L RIGHTS COPYRIGHT 2 3 — - LOC RESERVED. AD BY TYCO ELECTRONICS CORPORATION. REVISIONS D IST 00 LTR D E SC RIPTIO N H DWN DATE REVISED PER EC 0S12 - 0 2 7 3 - 0 5 APVD JDP DD 19SEP05
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19SEP05
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS U N P U B LIS H E D . COPYRIGHT 2 3 RELEASED FOR PUBLICATION — - A LL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. LOC □ 1ST AD 00 R E V IS IO N S P LTR D ESC R IPTIO N H R E V IS E D PER DATE PHOS APVD JDP DD 19SEP05 EC 0 S 1 2 - 0 2 7 3 - 0 5
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19SEP05
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 3 RELEASED BY TYCO ELECTRONICS CORPORATION. 2 FOR PUBLICATION LOC A LL RIGHTS RESERVED. R E VIS IO N S CE 16 LTR DESCRIPTION DATE A DWN APVD KH JD 19SEP05 1A MAXIMUM CONNECTOR INSERTION LOSS IS 0.5 dB D PLUS CABLE ATTENUATION OF 1.5 dB/km
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19SEP05
1300nm.
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 3 RELEASED BY TYCO ELECTRONICS CORPORATION. 2 FOR PUBLICATION LOC A LL RIGHTS RESERVED. R E VIS IO N S CE 16 LTR DESCRIPTION DWN DATE A APVD KH JD 19SEP05 1A MAXIMUM CONNECTOR INSERTION LOSS IS 0.5 dB D PLUS CABLE ATTENUATION OF 1.5 dB/km
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19SEP05
1300nm.
31MAR2000
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HD-20
Abstract: No abstract text available
Text: 7 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED A LL C O P YR IG H T - B Y TYCO ELE C TR O N IC S FO R 5 4 2 3 P U B L IC A T IO N R IG H T S LOC RESERVED. D IS T 00 GP C O RP O RA TIO N. R E V IS IO N S LTR A REVISED PER DWN D E S C R IP T IO N DATE
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ECO-06-028339
3/JAN/07
19SEP05
HD-20
31MAR2000
HD-20
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Untitled
Abstract: No abstract text available
Text: 7 8 T H IS D R A W IN G 15 U N P U B L IS H E D . RELEASED ALL C O P YR IG H T 2006 BY TYCO ELE C TR O N IC S FO R P U B L IC A T IO N R IG H T S lo c RESERVED. GP 0 0 C O RP O RA TIO N. R E V IS IO N S d is t ' — P~~| L fR I D E S C R IP T IO N I RELEASED PER EC 0 S 1 3 - 0 2 2 1 - 0 5
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19SEP05
13MAR06
us012439
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. LOC DIST AD R E V IS IO N S 39 LTR S1 1, D r .o i 6i - 0.41 r.o i oi 1, D c A\ 1 ,3 1, 2, 50, 51 ,99,1 00 1 , 2, 40, 41, 79, 80 1 , 2, 35, 36, 69, 70 1 , 2, 32, 33, 64. 65 1 , 2, 27, 28. 54. 55 1, 2, 50, 51 ,99,1 00 1, 2, 40,
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Untitled
Abstract: No abstract text available
Text: 4 TH IS DRAWING IS U N P U B LIS H E D . RELEASED FOR PUBLICATION A L L RIGHTS COPYRIGHT 2 3 — - LOC RESERVED. D IST AD BY TYCO ELECTRONICS CORPORATION. R E V IS IO N S 00 LTR D E SC RIPTIO N H DATE REVISED PER EC 0 S 1 2 - 0 2 7 3 - 0 5 APVD DWN JDP DD
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19SEP05
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