W88AA
Abstract: scanlogic SL11R x1 x2 eprom d1 d2 d3 d4 d5 d6 LIN protocol basics using atmel uart low cost eeprom programmer circuit diagram SL11R 0xC00C
Text: SL11R SL11R USB Controller/ 16-Bit RISC Processor Data Sheet Cypress Semiconductor Corporation Document #: 38-08006 Rev. * • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 Revised December 3, 2001 SL11R Table of Contents 1.0 DEFINITIONS . 8
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SL11R
16-Bit
SL11R
Controller/16-Bit
W88AA
scanlogic SL11R
x1 x2 eprom d1 d2 d3 d4 d5 d6
LIN protocol basics using atmel uart
low cost eeprom programmer circuit diagram
0xC00C
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scanlogic SL11R
Abstract: SL11R SL11-R 99 mfu
Text: SL11R USB Controller/16-Bit RISC Proc essor Technical Reference Cypress Semiconductor 3901 North First Street San Jose, CA 95134 408-943-2600 http://www.cypress.com Cypress Semiconductor SL11R Hardware Specification Definitions . 8
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SL11R
Controller/16-Bit
SL11R
SL11R-IDE
scanlogic SL11R
SL11-R
99 mfu
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scanlogic SL11R
Abstract: SL11R d1510 SRAM16-BIT "USB Transceiver" 1mega OHM RESISTOR Atmel 0342 parallel port to usb 0xC00C
Text: SL11R USB Controller/16-Bit RISC Processor Technical Reference ScanLogic Corporation 8 New England Executive Park Burlington, MA 01803 http://www.scanlogic.com ScanLogic Corporation SL11R Hardware Specification DEFINITIONS. 7
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SL11R
Controller/16-Bit
SL11R
scanlogic SL11R
d1510
SRAM16-BIT
"USB Transceiver"
1mega OHM RESISTOR
Atmel 0342
parallel port to usb
0xC00C
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20 NAC 12 I T2
Abstract: Edd 44 EDI4161MEV-RP
Text: ^EDI EDI4161MEV-RP ELECTRONIC DESIGNS, INC. I • 1Megx16 EDO DRAM 1Megabitx 16 Dynamic RAM 3.3V, Extended Data Out Features EDI's ruggedized plastic 1Mx16 DRAM allows the user to capitalize on the cost advantage o f using a plastic compo 1 Meg x 16 bit CMOS Dynamic
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EDI4161MEV-RP
cycles/16ms
1Mx16
mili1MEV60MI
EDI4161MEV70MI
U--0315
018-J
01581USA
EDI4161MEV-RP
20 NAC 12 I T2
Edd 44
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Untitled
Abstract: No abstract text available
Text: W D EDI4161MEV-RP \ ELECTRONIC-DESIGN INC, 1 1 M e g X K EDO D RAM 7 Megabitx 16Dynamic RAM 33V, ExtendedData Out Features EDI's mggedized plastic 1 Mx16 DRAM allows the user to capitalize on the cost advantage of using a plastic compo- 1 Meg x 16 bit CMOS Dynamic
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EDI4161MEV-RP
16Dynamic
cycles/16ms
01581USA
EDI4161MEV-RP
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI4161MEV-RP ELECTRONIC DESIGNS, INC I • W e g x W EDO DRAM 1Megabitx 16Dynamic RAM 3.3V, Extended Data Out Features EDI's ruggedized plastic 1 M xl 6 DRAM allows the user to capitalize on the cost advantage of using a plastic com po 1 Meg x 16 bit CMOS Dynamic
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EDI4161MEV-RP
16Dynamic
EDI4161MEV-RP
1Q179
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Untitled
Abstract: No abstract text available
Text: o tt a s 1991 —— DPZ1 MX! 6A3 □ P M o 1 MEC X 16 FLASH EEPROM DENSE-STACK MODULE ADVANCED INFORMATION DESCRIPTION: The D PZ1M X 16A 3 "D EN SE-STA CK" module is a revolutionary new memory subsystem using DensePac Microsystems' ceramic Stackable Leadless Chip
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X16A3
120ns
150ns
170ns
200ns
250ns
125-C
30A067-00
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Untitled
Abstract: No abstract text available
Text: 3-D PACKAGING TECHNOLOGY The electronic industry is always trying to reduce the physical size of circuit design implementations. This is especially true today. Circuit designs have increased in complexity and sophistication beyond the ability of traditional
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I/02A.
I/02B
I/03B
I/03A
I/04A
I/05A
I/06A
I/07A
I/07B
I/06B
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1230A1
Abstract: No abstract text available
Text: 16 Megabit FLASH EEPROM D E N S E - P A C M I C K OS V S T M S \í DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 AD VAN CED IN FO RM ATIO N DESCRIPTION: The DP5Z1MM16PY/Í3/H3/J3/DP5Z1MW16PA3 "SLCC" devices are a revolutionary new memory subsystem using Dense-Pac Microsystems'
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DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3
DP5Z1MM16PY/
3/H3/J3/DP5Z1MW16PA3
50-pin
16-Megabits
DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3
120ns
150ns
200ns
30A162-21
1230A1
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