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    1N1147 Search Results

    1N1147 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N1147 EDAL Industries SILICON HIGH VOLTAGE RECTIFIERS Scan PDF
    1N1147 EDAL Industries 67mA Iout, 12kV Vrrm General Purpose Silicon Rectifier Scan PDF
    1N1147 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N1147 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N1147 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N1147 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N1147 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N1147 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    1N1147 Semitronics 67mA Iout, 12kV Vrrm General Purpose Silicon Rectifier Scan PDF
    1N1147+JAN Defense Electronics Supply Center 67mA Iout, 12kV Vrrm General Purpose Silicon Rectifier Scan PDF

    1N1147 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N1149

    Abstract: 1N1149 JAN 1N1147 1N1147 JAN
    Text: INCH-POUND MIL-S-19500/254B 21 March 2005 SUPERSEDING MIL-S-19500/254A EL 6 February 1968 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, TYPES 1N1147 AND 1N1149, JAN Inactive for new design after 7 June 1999. This specification is approved for use by all Departments


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    PDF MIL-S-19500/254B MIL-S-19500/254A 1N1147 1N1149, MIL-PRF-19500. 1N1149 1N1149 JAN 1N1147 JAN

    Untitled

    Abstract: No abstract text available
    Text: 1N1147+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current67m @Temp (øC) (Test Condition)75 V(RRM)(V) Rep.Pk.Rev. Voltage12k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3.5 V(FM) Max.(V) Forward Voltage60 @I(FM) (A) (Test Condition)50m @Temp. (øC) (Test Condition)50


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    PDF 1N1147 Current67m Voltage12k Voltage60 Current10u Current200u

    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


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    1N1148

    Abstract: 1N1146 1N1143A 1N1149 lN114 Edal
    Text: 4SE T> • EDAL INDUSTRIES INC 30^571^ 0000271 351 ■ EDL 7 ^ ó i-ó J +3 / B. PIY S ee-T ab le 25 See T able AMPS V O See T able F57G STYLE STAMP 25 E d al, P o la r it y symbol, P/N EQUIY. TO P/N 1N1143A 1N1146 1N1147 1N1148 1N1149 — _ EXCEPT


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    PDF 1N1143A 1N1146 LN1147 1N1148 1N1149 IN1149WN IN1149 lN114 Edal

    1N1148

    Abstract: 1N1149 N 4148 1N1143A Edal
    Text: EDAL INDUSTRIES INC 4SE D m 30TS71L. 0 0 0 0 2 7 1 321 « E D L y^oi-oj » +3/ B. pry See- Table See Table 25 AMPS V O See Table STYLE STAMP 25 F57G Edal, Polarity symbol, P/N EQUTV. TO P/N 1N1143A 1N1146 1N1147 1N1148 1N1149 - EXCEPT PIV KV o (Amps)- 6.0


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    PDF 30TS71L. 1n1143a 1n1147 1n1148 1n1149 Manufacturer1n1143a 1N1149 N 4148 Edal

    1N1149

    Abstract: AS4A 1N1147
    Text: MIL SPECS I OODDiaS 7 | INCH-POUND NOTICE OF VALIDATION MIL-S-19500/254A ER NOTICE 1 29 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N1147 AND 1N1149 Military specification MIL-S-19500/254A(EL), dated 6 February 1968 has been reviewed and determined to be valid for use in


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    PDF 00D0ias MIL-S-19500/254A 1N1147 1N1149 MIL-5-19500/254A MIL-S-19500/254 1NU49 961-A 1N1149 AS4A

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


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    PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82

    1N2637

    Abstract: 1N1752 L0750 1N1148 IN175 1N1109 1N1133 1N1239 1N1746 1N2389
    Text: microsemi corp/ r p 14E D I bllb04D ODGQOHS n J lc RO A MICROS EMI COMPANY T - 01 - a t High Voltage Cartridge Rectifiers Fuse Type Maximum reverse current @ 25° C and rated voltage, 10 pA D.C. LENGTH PART NO. JEOEC PART NO. PRV VOLTS DC FORWARD DROP ' VOLTS


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    PDF bllb04D IN1108 1N1109 TN1110 1N11U M1t12 1N1t13 1N1133 1N1745 1N1134 1N2637 1N1752 L0750 1N1148 IN175 1N1239 1N1746 1N2389

    SEM 5027A

    Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
    Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES


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    1N1373R

    Abstract: 10191RA 1N600 1N1052 1N1059 3AF1 1N1056 1N1695 ZENER 18-2 5t HVC1800
    Text: JEDEC TO SARKES TARZIAN RECTIFIER CROSS REFERENCE Jedec No. S. T. Type No. 1N248 1N248A 1N248B 1N248C 1N249 1N249A 1N249B 1N249C 1N250 1N250A 1N250B 1N250C ST3A10P ST410P ST410P ST410P ST3A10P ST410P ST410P ST420P ST3A20P ST420P ST420P ST420P 1N253 1N254 1N255


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    PDF 1N248 1N248A 1N248B 1N248C 1N249 1N249A 1N249B 1N249C 1N250 1N250A 1N1373R 10191RA 1N600 1N1052 1N1059 3AF1 1N1056 1N1695 ZENER 18-2 5t HVC1800

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


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    PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17