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    Rectron Semiconductor 1N5391

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    Diotec Semiconductor AG 1N5391

    Diode - DO-15 - 50V - 1.5A
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    Rectron Semiconductor 1N5391-T

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    1N5391S Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N5391S Diodes 1.5A RECTIFIER Original PDF
    1N5391S Diodes Short Form Selection Guide Original PDF
    1N5391S Lite-On Technology 50V, 1.5A plastic silicon rectifier Original PDF
    1N5391S Taiwan Semiconductor 1.5 AMPS. Silicon Rectifiers Original PDF
    1N5391S Taiwan Semiconductor 1.5 AMPS. Silicon Rectifiers Original PDF
    1N5391S Taiwan Semiconductor 1.5 AMPS. Silicon Rectifiers Original PDF
    1N5391S Vishay Siliconix 1.5A Rectifier Original PDF
    1N5391/S Vishay Telefunken 1.5A Rectifier Original PDF
    1N5391S-A Diodes RECTIFIER STANDARD SINGLE 1.5A 50V 50 50A-ifsm 5uA-ir 1.1V-vf DO-41 5K/AMMO Original PDF
    1N5391S-B Diodes RECTIFIER STANDARD SINGLE 1.5A 50V 50 50A-ifsm 5uA-ir 1.1V-vf DO-41 1K/BULK Original PDF
    1N5391S-T Diodes RECTIFIER STANDARD SINGLE 1.5A 50V 50 50A-ifsm 5uA-ir 1.1V-vf DO-41 5K/REEL-13 Original PDF

    1N5391S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N5399S

    Abstract: 1N5391S
    Text: 1N5391S THRU 1N5399S GENERAL PURPOSE PLASTIC SILICON RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.5 Ampere Features • Low cost • High current capability • Plastic package has Underwriters Laboratory Flammabiliy Classification 94V-O ctilizing Flame Retardant


    Original     		PDF 1N5391S 1N5399S DO-41 MIL-STD-202, 1N5399S

    Untitled

    Abstract: No abstract text available
    Text:   SENSITRON SEMICONDUCTOR  1N5391S –  1N5399S 1.5A SILICON RECTIFIER Data Sheet 2579, Rev. —  Features     Diffused Junction                                                            


    Original     		PDF 1N5391S 1N5399S DO-41 MIL-STD-202,

    1N5391S

    Abstract: 1N5399S
    Text: 1N5391S THRU 1N5399S GENERAL PURPOSE PLASTIC SILICON RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.5 Ampere Features • Low cost • High current capability • Plastic package has Underwriters Laboratory Flammabiliy Classification 94V-O ctilizing Flame Retardant


    Original     		PDF 1N5391S 1N5399S DO-41 MIL-STD-202, 1N5399S

    Untitled

    Abstract: No abstract text available
    Text: 1N5391S - 1N5399S 1.5 AMPS Silicon Rectifiers DO-41 Features High current capability, Low VF High reliability & Current capability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing code & prefix "G" on datecode


    Original     		PDF 1N5391S 1N5399S DO-41 MIL-STD-202, 1N5391S

    Untitled

    Abstract: No abstract text available
    Text: 1N5391S thru 1N5399S Taiwan Semiconductor CREAT BY ART FEATURES Silicon Rectifiers - High efficiency, Low VF - High current capability - High reliability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition


    Original     		PDF 1N5391S 1N5399S 2011/65/EU 2002/96/EC DO-204AL DO-41) JESD22-B102 D1406002

    1n5399s

    Abstract: No abstract text available
    Text:   SENSITRON SEMICONDUCTOR  1N5391S –  1N5399S 1.5A SILICON RECTIFIER Data Sheet 2579, Rev. —  Features     Diffused Junction                                                            


    Original     		PDF 1N5391S 1N5399S DO-41 MIL-STD-202, 1n5399s

    Untitled

    Abstract: No abstract text available
    Text: 1N5391S - 1N5399S Pb 1.5 AMPS Silicon Rectifiers DO-41 RoHS COMPLIANCE Features High current capability, Low VF High reliability & Current capability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing code & prefix "G" on datecode


    Original     		PDF DO-41 1N5391S 1N5399S DO-41 MIL-STD-202, 260/10s 1N539XS 1N5392S1N5399S 1N5391S 50mVp-p

    1N5399S

    Abstract: 1N5391S
    Text: 1N5391S THRU 1N5399S GENERAL PURPOSE PLASTIC SILICON RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.5 Ampere Features • Low cost • High current capability • Plastic package has Underwriters Laboratory Flammabiliy Classification 94V-O ctilizing Flame Retardant


    Original     		PDF 1N5391S 1N5399S DO-41 MIL-STD-202, 1N5399S

    1N5391S

    Abstract: 1N5399S
    Text: 1N5391S THRU 1N5399S 1.5 AMPS. Silicon Rectifiers Voltage Range 50 to 1000 Volts Current 1.5 Amperes DO-41 Features Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Cases: Molded plastic Epoxy: UL 94V-O rate flame retardant


    Original     		PDF 1N5391S 1N5399S DO-41 MIL-STD-202, 260oC/10 25ambient 1N5392S-1N5399S 1N5399S

    1N5399S

    Abstract: 1N5391S
    Text: LITE-ON SEMICONDUCTOR 1N5391S thru 1N5399S REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.5 Amperes PLASTIC SILICON RECTIFIERS DO-41 FEATURES Low cost Diffused junction Low forward voltage drop Low reverse leakage current High current capability The plastic material carries UL recognition 94V-0


    Original     		PDF 1N5391S 1N5399S DO-41 DO-41 1N5399S

    Untitled

    Abstract: No abstract text available
    Text: 1N5391S THRU 1N5399S 硅整流二极管 General Purpose Rectifier •外形尺寸和印记 Features ● Io 1.5A ●VRRM 50V-1000V ●耐正向浪涌电流能力高 ●High surge current capability ■用途 Outline Dimensions and Mark DO-204AL DO-41 .205(5.21)


    Original     		PDF 1N5391S 1N5399S 0V-1000V DO-204AL DO-41 300us 22-Sep-11 21yangjie

    1N5391S

    Abstract: 1N5399S
    Text: 1N5391S - 1N5399S 1.5 AMPS. Silicon Rectifiers DO-41 Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: Pure tin plated, lead free., solderable


    Original     		PDF 1N5391S 1N5399S DO-41 MIL-STD-202, oC/10 1N5392S-1N5399S 1N5391S 1N5399S

    Untitled

    Abstract: No abstract text available
    Text: 1N5391S - 1N5399S Pb 1.5 AMPS Silicon Rectifiers DO-41 RoHS COMPLIANCE Features High current capability, Low VF High reliability & Current capability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing code & prefix "G" on datecode


    Original     		PDF 1N5391S 1N5399S DO-41 MIL-STD-202, 1N539XS 1N5392S1N5399S 1N5391S 50mVp-p

    1N5391S

    Abstract: 1N5399S
    Text: LITE-ON SEMICONDUCTOR 1N5391S thru 1N5399S REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.5 Amperes PLASTIC SILICON RECTIFIERS DO-41 FEATURES Low cost Diffused junction Low forward voltage drop Low reverse leakage current High current capability The plastic material carries UL recognition 94V-0


    Original     		PDF 1N5391S 1N5399S DO-41 DO-41 300us 01-Dec-2000, KDAC02 1N5399S

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    smd marking 911 zener

    Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
    Text: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.


    Original     		PDF M5263B, ZMM5264B, ZMM5265B, ZMM5266B, ZMM5267B, ZMM56, ZMM62, ZMM68, ZMM75, smd marking 911 zener d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    I251

    Abstract: n5392 1N5391S 1N5399S
    Text: E TAIWAN 1N5391S - 1N5399S SEMICONDUCTOR 1.5 AMPS. Silicon Rectifiers tò RoHS DO-41 COM PLIANCE 1 ,1 C 7 '2 . n .0 8 0 ¡2 .0 ; DW . -J E J - Features o •> ■> ❖ <r 1 .3 ÌZ5.-1I M IN. I-p. h .205 -fi.2} High efficiency. Law VF High current capability


    OCR Scan     		PDF 1N5391S 1N5399S DO-41 mil-STD-202. 1N5391STHRU1N5399S) I251 n5392 1N5399S

    1N5391S

    Abstract: 1N5399S
    Text: IM 1N5391S - 1N5399S TAIWAN SEMICONDUCTOR 1.5 AMPS. Silicon Rectifiers DO-41 RoHS COMPLIANCE Features .205 5.2 .166 (4.2) High current capability, Low VF. -0- High reliability & Current capability. High surge current capability. Low power loss, high efficiency.


    OCR Scan     		PDF 1N5391S 1N5399S DO-41 1N539XS MIL-STD-202, 260oC/10 1N5399S)

    Untitled

    Abstract: No abstract text available
    Text: 1N5391S 1N5399S THRU SILICON RECTIFIERS FEATURES: DO-2Q4AL DO-41 • Low cost • • • • 0.107(2.7) 0.080(2.0) DIA. High surge current capability Low leakage current Low forward voltage drop Diffused junction MECHANICAL DATA Case : Molded plastic use UL 94V-0 recognized flame


    OCR Scan     		PDF 1N5391S 1N5399S DO-41 MIL-STD-202,