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    Microchip Technology Inc 1N5552

    DIODE GEN PURP 600V 3A AXIAL
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    Microchip Technology Inc JAN1N5552

    DIODE GEN PURP 600V 3A AXIAL
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    Semtech Corporation 1N5552

    DIODE GEN PURP 600V 5A AXIAL
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    Microchip Technology Inc 1N5552E3

    DIODE GEN PURP 600V 5A B AXIAL
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    Microchip Technology Inc 1N5552US

    DIODE GEN PURP 600V 3A D-5B
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    1N5552 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N5552 Defense Supply Center Columbus SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, Original PDF
    1N5552 General Semiconductor GLASS PASSIVATED JUNCTION RECTIFIER Original PDF
    1N5552 General Semiconductor DIODE STANDARD RECOVERY RECTIFIER 600V 3A 2G4 Original PDF
    1N5552 Microsemi Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE STD REC GLASS B-PKG AXIAL Original PDF
    1N5552 Semtech Rectifier Diode, Standard Recovery Rectifier, Single, 600V, Case Style, 2-Pin Original PDF
    1N5552 Sensitron Semiconductor HIGH CURRENT AXIAL LEAD RECTIFIERS : 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER Original PDF
    1N5552 Taitron Components Rectifier Diode, Single, 600V, Case Style, 2-Pin Original PDF
    1N5552 Voltage Multipliers 600 V rectifier 5.0 A forward current, 2000 ns recovery time Original PDF
    1N5552 BKC International General Purpose Rectifiers / Switching Rectifiers Scan PDF
    1N5552 Central Semiconductor Glass Passivated Rectifier, 3.0 Amps, 200 Thru 1000 Volts, GPR-3A Case Scan PDF
    1N5552 Microsemi 5 Amp, General Purpose Rectifiers Scan PDF
    1N5552 Microsemi Rectifiers Scan PDF
    1N5552 Microsemi Data Book 1983 Scan PDF
    1N5552 Microsemi Rectifier Scan PDF
    1N5552 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N5552 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N5552 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    1N5552 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N5552 Solid State Devices General Purpose Rectifiers (Shortform Guide) Scan PDF
    1N5552C.TR Semtech Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURP 600V 5A AXIAL Original PDF

    1N5552 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1n5551

    Abstract: 1n5552
    Text: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency


    Original
    1N5550 1N5552 MIL-STD-750, 1N5551 1N5552 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 126, REV D JAN JANTX JANTXV HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount packaging


    Original
    1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US 1N5550 1N5551 1N5552 1N5553 1N5554 PDF

    1N5552US

    Abstract: No abstract text available
    Text: Web Datasheet- Power Rectifier Web Datasheet POWER RECTIFIER PART NUMBER: 1N5552US PACKAGE STYLE:MELF-B CONFIGURATION:SINGLE ALL RATINGS ARE @ Tc = 25 °C UNLESS OTHERWISE SPECIFIED. Disclaimer MAXIMUM RATINGS / Conditions SYMBOL MAX PIV 600 Volts MAXIMUM DC OUTPUT CURRENT @ Tc=55 °C


    Original
    1N5552US 1N5552US PDF

    1N5552 package

    Abstract: 1N5550 1N5551 1N5552
    Text: 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 3.0 Amperes E D * FEATURES ♦ Glass passivated cavity-free junction ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed package


    Original
    1N5550 1N5552 MIL-S-19500 50mVp-p 1N5552 package 1N5551 1N5552 PDF

    1N5550

    Abstract: 1N5551 1N5552
    Text: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode \ Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency


    Original
    1N5550 1N5552 MIL-STD-750, 1N5550 1N5551 D-74025 28-Jan-03 1N5551 1N5552 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5550 1N5551 1N5552 1N5553 1N5554 200 V - 1,000 V Rectifiers 5.0 A Forward Current 2000 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED 3 ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Working Number Reverse Voltage Average Rectified Current Reverse


    Original
    1N5550 1N5551 1N5552 1N5553 1N5554 50VDC PDF

    88518

    Abstract: 1N5550 1N5552 package 1N5551 1N5552
    Text: 1N5550 thru 1N5552 Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Rectifiers Case Style G4 0.180 4.6 0.115 (2.9) DIA. 1.0 (25.4) MIN. * d e t nFeatures e t a P Reverse Voltage 200 to 1000V Forward Current 3.0A • • •


    Original
    1N5550 1N5552 MIL-S-19500 MIL-STD-750, 50mVp-p 04-Dec-02 88518 1N5552 package 1N5551 1N5552 PDF

    1N5552 package

    Abstract: 1N5550 1N5551 1N5552
    Text: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency


    Original
    1N5550 1N5552 MIL-STD-750, 1N5550 1N5551 D-74025 11-Aug-04 1N5552 package 1N5551 1N5552 PDF

    1n5552 jan

    Abstract: No abstract text available
    Text: 1N5552+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time2.0u @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.2


    Original
    1N5552 Voltage600 Current25u 1n5552 jan PDF

    1N5552 package

    Abstract: 1N5550 1N5551 1N5552
    Text: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency


    Original
    1N5550 1N5552 MIL-STD-750, 1N5550 1N5551 08-Apr-05 1N5552 package 1N5551 1N5552 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5550 1N5553 1N5551 1N5554 1N5552 GLASS PASSIVATED SILICON RECTIFIERS 3.0 AMP, 200 THRU 1000 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5550 series types are silicon rectifiers mounted in a hermetically sealed, glass passivated package designed for general


    Original
    1N5550 1N5553 1N5551 1N5554 1N5552 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5550 thru 1N5552 Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Rectifiers Case Style G4 0.180 4.6 0.115 (2.9) DIA. 1.0 (25.4) MIN. * d e t nFeatures e t a P Reverse Voltage 200 to 1000V Forward Current 3.0A • • •


    Original
    1N5550 1N5552 MIL-S-19500 50mVp-p 11-Feb-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5552+JANTXV Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time2.0u @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.2


    Original
    1N5552 Voltage600 Current25u PDF

    1N5551

    Abstract: 1N5552 1N5553 JANTXV 1N5550 1N5553 1N5554
    Text: 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 126, REV F JAN SJ JANTX SX JANTXV SV HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount packaging


    Original
    1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US 1N5550 1N5551 1N5552 1N5553 1N5554 1N5551 1N5552 1N5553 JANTXV 1N5550 1N5553 1N5554 PDF

    1N5552 package

    Abstract: 1N5550 1N5551 1N5552
    Text: 1N5550 THRU 1N5552 Glass Passivated Junction Rectifier Case Style G4 1.0 25.4 MIN. 0.180 (4.6) 0.115 (2.9) DIA. * d e t n e t Pa Features • • • • Cavity-free glass passivated junction High temperature metallurgically bonded construction Hermetically sealed package


    Original
    1N5550 1N5552 MIL-S-19500 MIL-STD-750, 50mVp-p 1N5552 package 1N5551 1N5552 PDF

    1n5551 diode

    Abstract: 1N5551 3SM4 1N5550 1N5552 1N5554 3sm6 3SM8 1N5553
    Text: RECTIFIER, up to 1kV, 5A, 2µs January 7, 1998 1997 SEMTECH CORP. 1N5550 1N5551 1N5552 1N5553 1N5554 3SM2 3SM4 3SM6 3SM8 3SM0 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com 652 MITCHELL ROAD NEWBURY PARK CA 91320 RECTIFIER, up to 1kV, 5A, 2µs


    Original
    1N5550 1N5551 1N5552 1N5553 1N5554 1n5551 diode 1N5551 3SM4 1N5550 1N5552 1N5554 3sm6 3SM8 1N5553 PDF

    Untitled

    Abstract: No abstract text available
    Text: RECTIFIER, up to 1kV, 5A, 2 jis January 7, 1998 1N5550 1N5551 1N5552 1N5553 1N5554 3SM2 3SM4 3SM6 3SM8 3SM0 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED STANDARD RECOVERY RECTIFIER DIODE QUICK REFERENCE DATA


    OCR Scan
    1N5550 1N5551 1N5552 1N5553 1N5554 TEL805-498-2111 1N5550 1N5551 1N5552 1N5553 PDF

    Untitled

    Abstract: No abstract text available
    Text: 200 V -1,000 V Rectifiers 1N5550 1N5551 1N5552 1N5553 1N5554 5.0 A Forward Current 2000 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED MIL-PRF-19500/420 JAN JANTX JANTXV ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Working Part Number Reverse Reverse


    OCR Scan
    1N5550 1N5551 1N5552 1N5553 1N5554 MIL-PRF-19500/420 50VDC 1N5551 PDF

    Untitled

    Abstract: No abstract text available
    Text: B K C INTERNATIONAL 3DE D • 1 1 7 *n fl3 DGÜ03GS 7 ■ " " p O V O °j 1N5550 Series • General Purpose Rectifiers in “B” Body Package Type 1N5550 1N5551 1N5552 1N5553 1N5554 Peak Inverse Voltage MIN. PIV Minimum Reverse Breakdown Voltage @ 50 pA


    OCR Scan
    1N5550 1N5550 1N5551 1N5552 1N5553 1N5554 DO-34 DO-35 DO-41 LL-41 PDF

    w1853

    Abstract: No abstract text available
    Text: 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 3 . 0 Amperes FEATURES ♦ ♦ ♦ ♦ Glass passivated cavity-free junction High temperature m etallurgical^ bonded construction Hermetically sealed package


    OCR Scan
    1N5550 1N5552 MIL-S-19500 MIL-STD-750, w1853 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 3 . 0 Amperes FEATURES ♦Glass passivated cavity-free junction ♦ High temperature metallurgical^ bonded construction ♦ Hermetically sealed package


    OCR Scan
    1N5550 1N5552 MIL-S-19500 MIL-STD-750, PDF

    Untitled

    Abstract: No abstract text available
    Text: LOW VOLTAGE RECTIFIERS 2,000nS RECOVERY AXIAL LEADED HERMETICALLY SEALED MIL-S-19500/420 1N5550 1N5551 1N5552 1N5553 VRWM = 200-1000V , = 5 OA / I 1N5554 JANTX JANTXV RR 1N5550 thru 1N5554 A B C D .185Max 4.7 .180(4.57) Max .115(2.92) Min .042(1.07) Max


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    000nS MIL-S-19500/420 1N5550 1N5551 1N5552 1N5553 00-1000V 1N5554 1N5550 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 3.0 Amperes FEATURES ♦ ♦ ♦ ♦ Glass passivated cavity-free junction High temperature metallurgical^ bonded construction Hermetically sealed package


    OCR Scan
    1N5550 1N5552 MIL-S-19500 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER V oltage - 2 0 0 to 600 Volts C u rre n t - 3 .0 Amperes FEATURES ♦ ♦ ♦ ♦ Glass passivated cavity-free junction High temperature metallurgically bonded Hermetically sealed package Capable of meeting


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    1N5550 1N5552 IL-STD-750 1N5554 PDF