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Vishay Semiconductors 1N5627-TAP DIODE AVALANCHE 800V 3A SOD64
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N5627-TAP	Cut Tape	18,881		1	1 $1.61 10 $1.021 100 $1.61 1000 $0.48967 10000 $0.48967	Buy Now
	1N5627-TAP	Ammo Pack	15,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.39	Buy Now
Vishay Semiconductors 1N5627-TR DIODE AVALANCHE 800V 3A SOD64
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N5627-TR	Cut Tape	4,471		1	1 $1.61 10 $1.021 100 $1.61 1000 $0.48967 10000 $0.48967	Buy Now
	1N5627-TR	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.39	Buy Now
Vishay Semiconductors 1N5627GPHE3-54 DIODE GEN PURP 800V 3A DO201AD
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DigiKey	1N5627GPHE3-54	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Semiconductors 1N5627GP-E3-54 DIODE GEN PURP 800V 3A DO201AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N5627GP-E3-54	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies 1N5627-TAP AVALANCHE DIODE SOD64 STD - Ammo Pack (Alt: 1N5627-TAP)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	1N5627-TAP	Ammo Pack		13 Weeks	12,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	1N5627-TAP		9,278			1 $1.25 10 $0.936 100 $0.643 1000 $0.469 10000 $0.39	Buy Now
Newark	1N5627-TAP	Reel			12,500	1 - 10 - 100 - 1000 - 10000 $0.415	Buy Now
TTI	1N5627-TAP	Ammo Pack			12,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TME	1N5627-TAP		9,898		1	1 $0.831 10 $0.765 100 $0.665 1000 $0.466 10000 $0.432	Buy Now

EBV Elektronik	1N5627-TAP			14 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	1N5627-TAP		2,500		1	1 - 10 - 100 - 1000 - 10000 $0.54	Buy Now

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1N5627 Datasheets (37)

Part	Manufacturer	Description	Datasheet Type	PDF
1N5627	EIC Semiconductor	Glass Passivated Rectifier Diodes	Original	PDF
1N5627	General Semiconductor	DIODE STANDARD RECOVERY RECTIFIER 800V 3A 2DO-201AD	Original	PDF
1N5627	General Semiconductor	GLASS PASSIVATED JUNCTION RECTIFIER	Original	PDF
1N5627	Taitron Components	Rectifier Diode, Single, 800V, SOD-64, 2-Pin	Original	PDF
1N5627	Vishay Telefunken	Silicon Mesa Rectifiers	Original	PDF
1N5627	Central Semiconductor	Glass Passivated Rectifier 5.0 Amps, 200-800 Volts, GPR-3A Case	Scan	PDF
1N5627	General Electric	Semiconductor Data Book 1971	Scan	PDF
1N5627	General Electric	Semiconductor Data Handbook 1977	Scan	PDF
1N5627	General Instrument	Short Form Data 1976	Short Form	PDF
1N5627	Harris Semiconductor	3 Amp, 200V - 800V Diodes	Scan	PDF
1N5627	International Semiconductor	RECTIFIER DIODE	Scan	PDF
1N5627	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
1N5627	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
1N5627	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

1N5627	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
1N5627	Unknown	The Diode Data Book with Package Outlines 1993	Scan	PDF
1N5627	Powerex	Lead Mounted Rectifier	Scan	PDF
1N5627	Solid State	800 V, 3 A standard recovery rectifier	Scan	PDF
1N5627	Sun Wai Electronic Company	Silicon Rectifiers	Scan	PDF
1N5627	Telefunken Electronic	Sinterglass Rectifiers	Scan	PDF

1N5627 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
1N5625 Abstract: 1n5627 Text: 1N5624 thru 1N5627 Vishay Semiconductors Glass Passivated Junction Rectifier Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Capable of meeting environmental standards of	Original	1N5624 1N5627 MIL-S-19500 25any 18-Jul-08 1N5625 1n5627	PDF
Untitled Abstract: No abstract text available Text: 1N5624GP thru 1N5627GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current • High forward surge capability	Original	1N5624GP 1N5627GP MIL-S-19500 22-B106 DO-201AD AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: 1N5627+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.125¥ V(FM) Max.(V) Forward Voltage950m @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)	Original	1N5627 Voltage800 Voltage950m Current200u StyleDO-41	PDF
1N5624GP Abstract: 1N5627GP JESD22-B102D J-STD-002B 1n5626gp Text: 1N5624GP thru 1N5627GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation	Original	1N5624GP 1N5627GP DO-201AD MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 1N5627GP JESD22-B102D J-STD-002B 1n5626gp	PDF
1N5625GP Abstract: No abstract text available Text: 1N5624GP . 1N5627GP 3.0 Amp. Glass Passivated Junction Rectifier Current 3.0 A at 70º C Voltage 200V to 800 V DO-201AD DO-27 R FEATURES Glass passivated chip junction Hyperectifier structure for high reliability Cavity-free glass-passivated junction	Original	1N5624GP 1N5627GP DO-201AD DO-27) 2011/65/EU 2002/96/EC MIL-STD-750 J-STD-002 1N5625GP	PDF
diode 1n5624 Abstract: 1N5624 1N5625 1N5626 1N5627 Text: Certificate TH97/10561QM Certificate TW00/17276EM 1N5624 - 1N5627 GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 200 - 800 Volts Io : 3.0 Amperes D2A FEATURES : * * * * * * Glass passivated cavity-free junction Low forward voltage drop High reliability	Original	TH97/10561QM TW00/17276EM 1N5624 1N5627 UL94V-O MIL-STD-202, 50mVp-p diode 1n5624 1N5625 1N5626 1N5627	PDF
1N5620GP Abstract: 1N5624GP 1N5625GP 1N5626GP 1N5627GP Text: 1N5624GP. 1N5627GP 3 Amp. Glass Passivated Junction Rectifier Dimensions in mm. DO-201 AD Plastic Voltage 200 to 800 V. Current 3.0 A. at 70 °C. 9.1 ± 0.3 62.5 ± 0.5 Mounting instructions 1. Min. distance from body to soldering point, 4 mm.	Original	1N5624GP. 1N5627GP DO-201 1N5624GP 1N5625GP 1N5626GP 1N5620GP 1N5620GP 1N5624GP 1N5625GP 1N5626GP 1N5627GP	PDF
1N5624GP Abstract: 1N5627GP JESD22-B102 J-STD-002 Text: 1N5624GP thru 1N5627GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat • Low leakage current	Original	1N5624GP 1N5627GP DO-201AD MIL-S-19500 2002/95/EC 2002/96/EC 18-Jul-08 1N5627GP JESD22-B102 J-STD-002	PDF
Untitled Abstract: No abstract text available Text: 1N5624GP, 1N5625GP, 1N5626GP, 1N5627GP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES SUPERECTIFIER • Superectifier application structure for high reliability • Cavity-free glass-passivated junction	Original	1N5624GP, 1N5625GP, 1N5626GP, 1N5627GP 22-B106 DO-201AD AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU.	PDF
1N5624 Abstract: 1N5625 1N5626 1N5627 Text: 1N5624 thru 1N5627 Glass Passivated Junction Rectifier * d e t n Features e t a P Case Style G3 • • • • Cavity-free glass passivated junction High temperature metallurgically bonded construction Hermetically sealed package Capable of meeting environmental standards of	Original	1N5624 1N5627 MIL-S-19500 50mVp-p 1N5625 1N5626 1N5627	PDF
DIODE 1N5625 V Abstract: vishay 1N5625 DIODE 1N5625 1N5625 diode 1N5625 1N5625 Specifications 1N5626 Text: 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading	Original	1N5624, 1N5625, 1N5626, 1N5627 2002/95/EC 2002/96/EC OD-64 MIL-STD-750, 1N5624 1N5625 DIODE 1N5625 V vishay 1N5625 DIODE 1N5625 1N5625 diode 1N5625 Specifications 1N5626	PDF
1N5625 Abstract: 1N5624 Text: 1N5624 thru 1N5627 Vishay Semiconductors Glass Passivated Junction Rectifier Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Capable of meeting environmental standards of	Original	1N5624 1N5627 MIL-S-19500 08-Apr-05 1N5625	PDF
Untitled Abstract: No abstract text available Text: 1N5624 to 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current e2 949588 • High surge current loading • Lead Pb -free component	Original	1N5624 1N5627 2002/95/EC 2002/96/EC OD-64 MIL-STD-750, 1N5625 1N5626 1N5627	PDF
1N5625 Abstract: 1N5625 diode diode 1n5624 vishay 1N5625 1N5626 Text: 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading	Original	1N5624, 1N5625, 1N5626, 1N5627 2002/95/EC 2002/96/EC OD-64 MIL-STD-750, 1N5624 1N5625 1N5625 diode diode 1n5624 vishay 1N5625 1N5626	PDF

1N5624 Abstract: 1N5625 1N5626 1N5627 Text: 1N5624 THRU 1N5627 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts FEATURES N T E D * CASE STYLE G3 E P A T Forward Current - 3.0 Amperes 1.0 25.4 MIN 0.250 (6.3) 0.170 (4.3) DIA. 0.300 (7.6) MAX. 0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4)	Original	1N5624 1N5627 MIL-S-19500 inches10 50mVp-p 1N5625 1N5626 1N5627	PDF
1N5624GP Abstract: 1N5625GP 1N5626GP 1N5627GP Text: 1N5624GP THRU 1N5627GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts FEATURES D * DO-201AD N T E ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction	Original	1N5624GP 1N5627GP DO-201AD MIL-S-19500 50mVp-p 1N5625GP 1N5626GP 1N5627GP	PDF
diode 1n5624 Abstract: vishay 1N5625 9563 1N5624 1N5625 1N5626 1N5627 Text: 1N5624.1N5627 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current High surge current loading Applications 94 9588 Rectifier, general purpose	Original	1N5624. 1N5627 1N5624 1N5625 1N5626 D-74025 27-Sep-00 diode 1n5624 vishay 1N5625 9563 1N5624 1N5625 1N5626 1N5627	PDF
diode 1n5624 Abstract: 1N5624 with forward current 5 amp 1N5624 1N5625 1N5626 1N5627 Text: 1N5624 THRU 1N5627 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts FEATURES N T E D * CASE STYLE G3 E P A T Forward Current - 3.0 Amperes 1.0 25.4 MIN 0.250 (6.3) 0.170 (4.3) DIA. 0.300 (7.6) MAX. 0.052 (1.32) 0.048 (1.22) DIA. ♦ Glass passivated cavity-free junction	Original	1N5624 1N5627 MIL-S-19500 50mVp-p diode 1n5624 1N5624 with forward current 5 amp 1N5625 1N5626 1N5627	PDF
Untitled Abstract: No abstract text available Text: 57E D • rA Ü U H 345=1325 GD00L.75 bT2 « F Ü R S ~ m 1N5624GP.1N5627GP FAGOR ELECTRONICS 3 Amp Glass Passivated Junction Rectiier f V -■ •«• Dimensions in mm. - DO-27 A DO-201 AD Plastic -i— . -i V - •* V- Voltage 200 to 800 V.	OCR Scan	GD00L 1N5624GP. 1N5627GP DO-27 DO-201 DO-201AD DO-27A DO-201AE	PDF
IN5624 Abstract: 5627GP in5627 1N5620GP 1N5624GP 1N5627GP 5626GP IN5627GP Text: 7E D • 345=1325 GD00L.75 bT2 « F G R S — 1N5624GP. 1N5627GP FAGOR ELECTRONICS 3 Amp. Glass Passivated Tunction Rectiier Dimensions in mm. DO-27 A DO-201 AD - Plastic Mounting instructions 1. Min. distance from body to soldering point, 4 mm.	OCR Scan	GD00L 1N5624GP. 1N5627GP DO-27 DO-201 5624GP 562SGP 5626GP 5627GP C2-17 IN5624 5627GP in5627 1N5620GP 1N5624GP 1N5627GP IN5627GP	PDF
Untitled Abstract: No abstract text available Text: 1N5624GPTHRU 1N5627GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current DQ-201 AD FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgical^ bonded construction	OCR Scan	1N5624GPTHRU 1N5627GP DQ-201 MIL-S-19500	PDF
1n5624 Abstract: No abstract text available Text: 1N5624 THRU 1N5627 GLASS PASSIVATED SILICON RECTIFIER Voltage - 200 to 800 Volts Current - 3.0 Amperes FEATURES ♦ Glass passivated cavity-free junction ♦ High temperaturae metallurgical^ bonded con structed rectifiers ♦ Hermetically sealed package	OCR Scan	1N5624 1N5627 MIL-S-19500 IL-S-19500/432.	PDF
Untitled Abstract: No abstract text available Text: 1N5624GP.1N5627GP FAGOR 3 Amp. Glass Passivated Junction Rectifier Dimensions in mm. ò ou> g D0-201 AD Plastic Voltage 200 to 800 V. Current 3.0 A. at 70 °C. \J -3 ±0d\ _ 59.5 min._ Mounting instructions	OCR Scan	1N5624GP. 1N5627GP D0-201 1N5620GP	PDF
JANTX1N5624 Abstract: 1N5B26 Text: POWER SEMICONDUCTOR DIVISION JAN AND JANTX 1N5624 THRU 1N5627 PASSIVATED JUNCTION SILICON RECTIFIER VOLTAGE - 50 to 800 Volts T FEATURES 0.90 22.861 (5.84 OIA. .170 (4.32) \ i .320 (8.13) .200 (5.08) 7 •052 C l.32]DIA. .049 (1.24) CURRENT - 3.5 Amperes_	OCR Scan	1N5624 1N5627 MIL-STD-202, JANTX1N5624 1N5B26	PDF

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Vishay Semiconductors 1N5627-TAP

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1N5627 Datasheets (37)

1N5627 Datasheets Context Search

1N5625

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1N5624GP

1N5625GP

diode 1n5624

1N5620GP

1N5624GP

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1N5624

DIODE 1N5625 V

1N5625

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1N5625

1N5624

1N5624GP

diode 1n5624

diode 1n5624

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IN5624

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1n5624

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JANTX1N5624