diode 5082-3080

Abstract: 1N5767 5082-3080 1N5957
Contextual Info: PIN DIODE 1N5767 5082 - 3080 SERIES 1N5957 S E R IE S Features • • • • Useful attenuation from 1 i*A to 100 m A bias. Capacitance below 0.4 pF. Low distortion in switches and attenuators. Rugged Microsemi construction. Description The 1N5767 and 1N5957 PIN diodes are

MT29KZZZ4D4RGFAK-5 W

Contextual Info: Microsemi PIN Diodes — Part Number i Microsemi I UPP9401 UM9401 UM9401F UM9401SM UM9402 UM9415 UM9415SM UM9301 UM9301SM 1N5767 1N5957 UM6601 UM6001 UM7301 UM7301SM UM7001 UM7001SM UM7501 UM6201 UM9441 UM7101 UM7101SM UM9601 UM9603 UM9605 UM9607 UPP1001 UM9701

Contextual Info: PIN DIODE 1N5767 5082 - 3080 SERIES 1N5957 SERIES Features • • • • Useful attenuation from 1 mA to 100 mA bias. Capacitance below 0.4 pF. Low distortion in switches and attenuators. Rugged Microsemi construction. Description The 1N5767 and 1N5957 PIN diodes are

5082-3080

Abstract: 1N5767 1N5957SERIES diode 5082-3080 1N5957
Contextual Info: 1N5767 5082-3080 SERIES 1N5957SERIES KEY FEATURES DESCRIPTION Both switch and attenuator applications. The 1N5957 is primarily used as an attenuator PIN diode and is particularly suitable wherever current controlled, wide dynamic range resistance elements are required. The 1N5957 has also been

Contextual Info: 1N5913B - 1N5957B SILICON ZENER DIODES DO - 41 VZ : 3.3 - 240 Volts PD : 1.5 Watts FEATURES : * * * * Complete Voltage Range 3.3 to 200 Volts High peak reverse power dissipation High reliability Low leakage current 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0)

Contextual Info: 1N5957 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 100 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.3.5 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.400f Carrier Lifetime (S)1.5u @I(F) (test) (A)10m @I(R) (A) (Test Condition)

1N5913A

Abstract: 1N5914A 1N5915A 1N5916A 1N5917A 1N5918A 1N5957A
Contextual Info: 1N5913A - 1N5957A SILICON ZENER DIODES DO - 41 V Z : 3.3 - 240 Volts P D : 1.5 Watts FEATURES : * * * * Complete Voltage Range 3.3 to 200 Volts High peak reverse power dissipation High reliability Low leakage current 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0)

1N5913B

Abstract: 1N5914B 1N5915B 1N5916B 1N5957B
Contextual Info: Certificate TH97/10561QM 1N5913B - 1N5957B Certificate TW00/17276EM SILICON ZENER DIODES DO - 41 VZ : 3.3 - 240 Volts PD : 3 Watts 1.00 25.4 MIN. 0.108 (2.74) 0.079 (1.99) FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation

1N5913A

Abstract: 1N5914A 1N5915A 1N5916A 1N5957A
Contextual Info: Certificate TH97/10561QM 1N5913A - 1N5957A Certificate TW00/17276EM SILICON ZENER DIODES DO - 41 VZ : 3.3 - 240 Volts PD : 3 Watts 1.00 25.4 MIN. 0.108(2.74) 0.079 (1.99) FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation

zener 1n5921A

Abstract: 1N5913A 1N5914A 1N5915A 1N5957A
Contextual Info: TH97/2478 1N5913A - 1N5957A TH09/2479 IATF 0060636 SGS TH07/1033 SILICON ZENER DIODES DO - 41 VZ : 3.3 - 240 Volts PD : 3 Watts 1.00 25.4 MIN. 0.108 (2.74) 0.078 (1.99) FEATURES : * Complete Voltage Range 3.3 to 240 Volts * High peak reverse power dissipation

1N5913A

Abstract: 1N5914A 1N5915A 1N5916A 1N5917A 1N5918A 1N5957A
Contextual Info: 1N5913A - 1N5957A SILICON ZENER DIODES DO - 41 VZ : 3.3 - 240 Volts PD : 1.5 Watts FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0)

1N SERIES DIODE

Abstract: 1N5767 diode 5082-3080 1N5957 2000Q 1N5957SERIES unitrode diode iN5957
Contextual Info: PIN DIODE 1N5767 5082 - 3080 SERIES 1N5957 SERIES Features • • • • Useful attenuation from 1 i*Ato 100 mA bias. Capacitance below 0.4 pF. Low distortion in sw itches and attenuators. Rugged Unitrode construction. Description The 1N5767 and 1N5957 PIN diodes are

Contextual Info: 1N5913A - 1N5957A SILICON ZENER DIODES DO - 41 V Z : 3.3 - 240 Volts P D : 1.5 Watts FEATURES : * * * * Complete Voltage Range 3.3 to 200 Volts High peak reverse power dissipation High reliability Low leakage current 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0)

Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com 1N5913A - 1N5957A SILICON ZENER DIODES

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­

TRANSISTOR J 5804 NPN

Abstract: TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621
Contextual Info: PART NUMBER INDEX ni CR O S E M I CO RP / UIATERTOUN PART NU M BER I N 5614, 1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, I N 5622, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, JTXV JTXV JTXV JTXV JTXV JTXV JTXV JTXV 1N5767 1N5802 1N5802, J, JTX, JTXV

1N5913A

Abstract: 1N5914A 1N5915A 1N5916A 1N5917A D041
Contextual Info: 5YHSEMI SEMICONDUCTOR 1N5913A - 1 N5957A SILICON ZENER DIODES D O -41 Vz : 3.3 - 240 Volts Pd : 1.5 Watts FEATURES : * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) Complete Voltage Range 3.3 to 200 Volts High peak reverse power dissipation High reliability