1N6377

Abstract: 1N6373 1N6381 1N6382 1N6385 1N6389 ICTE15C MPTE-45 ICTE-12 equivalent MPTE-15
Contextual Info: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com ICTE5.0 to ICTE15C MPTE-5 to MPTE-45 1N6373 to 1N6381 and 1N6382 to 1N6389

1N6389

Abstract: 1N6373 1N6381 1N6382 1N6383 1N6384 ICTE-10C ICTE-36C MPTE-45C
Contextual Info: 1N6382 - 1N6389 Series ICTE-10C - ICTE-36C, MPTE-8C - MPTE-45C 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have

TVS 36C

Abstract: diode zener 22c MPTE-45 ICTE 1N6373 1N6381 1N6382 1N6383 1N6384 1N6389
Contextual Info: 1N6382 - 1N6389 Series ICTE-10C - ICTE-36C, MPTE-8C - MPTE-45C 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have

1N6373

Abstract: 1N6381 1N6382 1N6383 1N6384 1N6389 ICTE-10C ICTE-36C MPTE-45C
Contextual Info: 1N6382 - 1N6389 Series ICTE-10C - ICTE-36C, MPTE-8C - MPTE-45C 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have

Contextual Info: 1N6382 Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC -65 Maximum Operating Temp (øC)175õ V(BR) Nom.(V)Rev.Break.Voltage9.4 @I(R) (A) (Test Condition)1m V(RWM) (V) Work.Pk.Rev.Voltage8 I(PPM) Max.(A)Pk.Pulse Current100

N6385

Contextual Info: G eneral S e m i c o n d u c t o r _ ^ ^ - ._ ICTE5.0 thru ICTE15C 1 N6373 thru 1N 6377 & 1N6382 thru 1 N6385 TRANsZoRB Transient Voltage S uppressors Stand Off Voltage 5.0 to 15V Peak Pulse Power 1500W • Plastic package has Underwriters Laboratory

Contextual Info: Transient Voltage Suppressors Part Number TVS JANTXV1N5632A LC8.0 LC8.0A LCE8.0 LCE8.0A SMCG8.0 SMCG8.0A SMCJ8.0 SMCJ8.0A 1N6039 1N6357 1N6365 1N6374 1N6382 ICT-8 ICTE-8 MPT-8 MPT-8C MPTE-8 MPTE-8C 1.5KCD10 1.5KE10 1N5633 1N6271 CD6271 1N6143 1N6143US JAN1N6143

28 volt transzorb

Contextual Info: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386 Vishay Semiconductors formerly General Semiconductor TRANSZORB Transient Voltage Suppressors Case Style 1.5KE d e d n nge e t x E e Ra Features g a t l Vo 1.0 25.4 MIN. 0.210 (5.3) 0.190 (4.8)

Contextual Info: 1N6382 − 1N6389 Series ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have

1N6373

Abstract: 88356 1N6382 1N6378 1N6386 ICTE18C
Contextual Info: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386 Vishay Semiconductors formerly General Semiconductor TRANSZORB Transient Voltage Suppressors Case Style 1.5KE d e d n nge e t x E e Ra Features g a t l Vo 1.0 25.4 MIN. 0.210 (5.3) 0.190 (4.8)

1N6373

Abstract: 1N6381 1N6382 1N6385 1N6389 ICTE15C MPTE-45
Contextual Info: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. 92253 Tel: 760-564-8656 • Fax: 760-564-2414 ICTE5.0 to ICTE15C MPTE-5 to MPTE-45 1N6373 to 1N6381 and 1N6382 to 1N6389 GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR STANDOFF VOLTAGE- 5.0 to 45.0V

Contextual Info: ICTE5.0 thru ICTE15C 1N6373 thru 1N6377 & 1N6382 thru 1N6385 TRANSZORB Transient Voltage Suppressors Stand Off Voltage 5.0 to 15V Peak Pulse Power 1500W Case Style 1.5KE 1.0 25.4 MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) Features • Plastic package has Underwriters Laboratory

diode 1n6376 data sheet

Abstract: 1N6377 88356 1N6382 3 Volt transzorb ICTE ICTE-15 Transient Voltage Suppressors transzorb symbol 1N6373
Contextual Info: ICTE5.0 thru ICTE15C, 1N6373 thru 1N6377 & 1N6382 thru 1N6385 Vishay Semiconductors formerly General Semiconductor TRANSZORB Transient Voltage Suppressors Stand Off Voltage 5.0 to 15V Peak Pulse Power 1500W Case Style 1.5KE 1.0 25.4 MIN. 0.210 (5.3) 0.190 (4.8)

Contextual Info: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

Contextual Info: MPTE/1 N6 3 7 3 - 1 N 6 3 8 9 series MPTE SERIES 1500 WATT AXIAL TRANSIENT VOLTAGE SUPPRESSORS 01.016*0.050 The MPTE series 1500 W transient suppressors are designed specifically for the protection of CMOS, NMOS. BiMOS, and other intergrated circuits available today for TTL,

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

Contextual Info: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s P T E / 1 N 6 3 7 3 ~~ 1N63^ O Y O Q M Control over power 01.O16±O.O5O im s ib ie Prolection FEATURES When no problems exist, Oydom TVS • Qass passivated junction Diodes are totally invisible to the circuits

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . DIODES Diodes - Protect Against Transient Voltage Surge and ESD T VS and ESD Protection Diodes for TVS and ESD Protection Featured Products Tr a n s Z o r b A v a l a n c h e Tr a n s i e n t Vo l t a g e S u p p r e s s o r s

XD 105 94V-0

Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

1N623

Abstract: 1N6377 1N6281A 1N6284 1N6269A MPTE-15 1N6267 1N6267A 1N6273 1N6383
Contextual Info: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. 92253 Tel: 760-564-8656 Fax: 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com JEDEC AND INDUSTRY STANDARD DEVICES MANUFACTURED JEDEC JEDEC

E223026

Abstract: SMD BR 17
Contextual Info: MDE Semiconductor, Inc. Single Minded Focus on Surge Suppression Solutions October 28, 2005 To whom it may concern: Product Description: Transient Voltage Suppressors TVS Diodes Manufacture / Vendor: MDE Semiconductor, Inc. LEAD FREE COMPONENTS 1. Axial lead Device: Plating component is 100% Sn, meeting the lead free standards.

Contextual Info: ICTE5.0 thru ICTE18C 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors Major Ratings and Characteristics VWM 5.0 V to 18 V PPPM 1500 W PD 6.5 W IFSM 200 A Tj max. 175 °C Case Style 1.5KE Features Mechanical Data • Glass passivated chip junction

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9