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    1SS294 Price and Stock

    Toshiba America Electronic Components 1SS294,LF

    DIODE SCHOTTKY 40V 100MA S-MINI
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    DigiKey 1SS294,LF Cut Tape 7,111 1
    • 1 $0.2
    • 10 $0.139
    • 100 $0.2
    • 1000 $0.06954
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    1SS294,LF Digi-Reel 7,111 1
    • 1 $0.2
    • 10 $0.139
    • 100 $0.2
    • 1000 $0.06954
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    1SS294,LF Reel 6,000 3,000
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    Avnet Americas 1SS294,LF Reel 16 Weeks 3,000
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    • 10000 $0.0351
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    Mouser Electronics 1SS294,LF 8,910
    • 1 $0.2
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    • 100 $0.087
    • 1000 $0.07
    • 10000 $0.037
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    TTI 1SS294,LF Reel 3,000
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    Micro Commercial Components 1SS294-TP

    DIODE SCHOTTKY 40V 100MA SOT23
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    DigiKey 1SS294-TP Bulk
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    Toshiba America Electronic Components 1SS294S,LF

    X34 PB-F S-MINI SHOTTKY BARRIER DIODE (LF), IFM=300MA - Tape and Reel (Alt: 1SS294S,LF)
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    Avnet Americas 1SS294S,LF Reel 3,000
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    Toshiba America Electronic Components 1SS294(TE85LF)

    Diode Small Signal Schottky 45V 0.1A 3-Pin S-Mini T/R - Tape and Reel (Alt: 1SS294(TE85L,F))
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    Avnet Americas 1SS294(TE85LF) Reel 32 Weeks 3,000
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    Avnet Asia 1SS294(TE85LF) 32 Weeks 3,000
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    Toshiba America Electronic Components 1SS294(TE85L,F)

    Schottky Diodes & Rectifiers LV High Speed 0.54V 5uA IR 45V VRM
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    Mouser Electronics 1SS294(TE85L,F) 7,246
    • 1 $0.44
    • 10 $0.324
    • 100 $0.183
    • 1000 $0.093
    • 10000 $0.064
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    Verical 1SS294(TE85L,F) 50,722 463
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    • 1000 $0.1579
    • 10000 $0.1454
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    Quest Components 1SS294(TE85L,F) 40,629
    • 1 $0.65
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    • 10000 $0.195
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    EBV Elektronik 1SS294(TE85L,F) 27 Weeks 3,000
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    Find more 1SS294 price and stock on Findchips.com

    1SS294 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS294 EIC Semiconductor Schottky Barrier Diodes Original PDF
    1SS294 Kexin Low Voltage High Speed Switching Original PDF
    1SS294 Toshiba Japanese - Diodes Original PDF
    1SS294 Toshiba DIODE SCHOTTKY DIODE 45V 0.1A 3(1-3G1B) Original PDF
    1SS294 Toshiba Diode - Silicon Epitaxial Schottoky Barrier Type Original PDF
    1SS294 TY Semiconductor Low Voltage High Speed Switching - SOT-23 Original PDF
    1SS294 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS294 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS294 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan PDF
    1SS294 Toshiba DIODE Scan PDF
    1SS294,LF Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 40V 100MA SMINI Original PDF
    1SS294S,LF Toshiba 1SS294S - X34 PB-F S-MINI SHOTTKY BARRIER DIODE (LF), IFM=300MA Original PDF
    1SS294T5LFT Toshiba 1SS294 - Schottky (Diodes & Rectifiers) Diode Original PDF
    1SS294T5LT Toshiba 1SS294T5LT - Diode Small Signal Schottky 45V 0.1A 3-Pin S-Mini T/R Original PDF
    1SS294TE85L Toshiba 1SS294 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS294TE85L2 Toshiba 1SS294 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS294(TE85L,F) Toshiba 1SS294 - Diode Small Signal Schottky 45V 0.1A 3-Pin S-Mini T/R Original PDF
    1SS294TE85R Toshiba 1SS294 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS294TE85R2 Toshiba 1SS294 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF

    1SS294 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS294 TO SHIBA TO SHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.5 2 . 5 - 0 .3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59 •


    OCR Scan     		1SS294 SS294 SC-59 O-236MOD SC-59 PDF

    1SS294

    Abstract: No abstract text available
    Text: 1SS294 SILICON EPITAXIAL PLANAR TYPE LOW VOLTAGE HIGH SPEED SWITCHING. Unit in mm . Low Forward Voltage V f =0 .54V Typ. . Low Reverse Current lR=5MA(Max.) . Small Package SC-59 +0.5 2.5 -0.3 +0.25 1.5-0.15 1 0.3 - MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC


    OCR Scan     		1SS294 SC-59 100mA 1SS294 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS294 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage: VF 3 = 0.54 V(Typ). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A(Max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low reverse current: IR = 5


    Original     		1SS294 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse surrent : IR = 5µA (max) l Small package : SC−59 Maximum Ratings (Ta = 25°°C) Characteristic


    Original     		1SS294 236MOD 100mA PDF

    NMR14

    Abstract: BLM21PG600SN1 TANTAL 16V Tantal 22uF/16V B3FS-1002 sw dip-4 DPC 31 SW-DIP-4 1SS294 B3F-1002
    Text: 5 4 3 2 1 D D SCL 3.3V 3.3V 3 2 1 JP1 XJ8C-0311 DPC R1 GPIO7 SW5 R2 10k R3 10k U2 10k B3FS-1002 8 7 6 5 GPIO6 SW4 VCC WP SCL SDA A0 A1 A2 GND 1 2 3 4 3.3V M24C32-WBN6 B3FS-1002 CP1 3.3V 3.3V D1 1SS294 0.1uF R4 1.5k RESET GPIO5 SW1 B3FS-1002 R8 R6 R7 1K R9


    Original     		XJ8C-0311 B3FS-1002 M24C32-WBN6 1SS294 22uF/16V B3F-1002 30MHz XG8T-1031 NMR14 BLM21PG600SN1 TANTAL 16V Tantal 22uF/16V B3FS-1002 sw dip-4 DPC 31 SW-DIP-4 1SS294 B3F-1002 PDF

    1SS294

    Abstract: No abstract text available
    Text: 1SS294 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS294 ○ 低電圧高速スイッチング用 単位: mm : SC-59 : VF 3 = 0.54V (標準) : IR = 5 A (最大) z 外形が小さい。 z 順電圧が小さい。 z 逆電流が小さい。


    Original     		1SS294 SC-59 236MOD 100mA 1SS294 PDF

    1SS294

    Abstract: No abstract text available
    Text: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse surrent : IR = 5µA (max) l Small package : SC−59 Maximum Ratings (Ta = 25°°C) Characteristic


    Original     		1SS294 SC-59 1SS294 PDF

    1SS294

    Abstract: No abstract text available
    Text: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse surrent : IR = 5 A (max) z Small package : SC−59 Absolute Maximum Ratings (Ta = 25°C)


    Original     		1SS294 SC-59 O-236MOD 1SS294 PDF

    1SS294

    Abstract: No abstract text available
    Text: TOSHIBA 1SS294 TOSHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING. • • • + 0.5 2.5 -0.3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5/j A (Max.) Small Package : SC-59


    OCR Scan     		1SS294 SC-59 O-236MOD 1SS294 PDF

    TOSHIBA DIODE

    Abstract: 1SS294
    Text: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF 3 = 0.54V (typ.) Low reverse surrent : IR = 5µA (max) Small package : SC−59 Maximum Ratings (Ta = 25°°C) Characteristic


    Original     		1SS294 SC-59 TOSHIBA DIODE 1SS294 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS294 TOSHIBA TOSHIBA DIODE 1SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LOW VOLTAGE HIGH SPEED SWITCHING. + 0.5 2 . 5 - 0.3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : I r = 5/¿A (Max.) Small Package : SC-5Ô + 0.25 1. 5 - 0.15


    OCR Scan     		1SS294 O-236MOD SC-59 PDF

    transistor XM

    Abstract: marking 724 diode diode marking code xm sot-23 marking code 1SS294 Semtech
    Text: 1SS294 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features • Small surface mounting type • Low reverse current • Low forward voltage 3 1 Absolute Maximum Ratings Ta = 25 OC Parameter Marking Code: "XM" SOT-23 Plastic Package 2 Symbol Value Unit


    Original     		1SS294 OT-23 transistor XM marking 724 diode diode marking code xm sot-23 marking code 1SS294 Semtech PDF

    XJ8C-0311

    Abstract: R3012 R2533 XG8W-0231 NEC TANTAL NMR14 TANTAL R 1SS294 B3F-1002 DPC 31
    Text: 5 4 3 SCL 3.3V 3.3V DPC R2 10k R1 10k 10k DPC U2 8 7 6 5 JP5 D JP1 XG8W-0231 2 R3 + + R6 1K 1 1 JP2 XJ8C-0311 3 2 1 3.3V 2 1 2 3 VCC WP SCL SDA A0 A1 A2 GND 1 2 3 4 D 3.3V M24C32-WBN6 R33 10k XJ8C-0311 CP1 D1 1SS294 0.1uF CMB_STATE R5 1.5k RESET JP4 10k 2


    Original     		XG8W-0231 XJ8C-0311 M24C32-WBN6 1SS294 12pF/10pF 30MHz 22uF/16V XJ8C-0311 R3012 R2533 XG8W-0231 NEC TANTAL NMR14 TANTAL R 1SS294 B3F-1002 DPC 31 PDF

    NEC TANTAL

    Abstract: Tantal 22uF/16V 10uF/16V tantal CP24 LT1761ES5-3.3 tantal NMR14 1SS294 DD10 DD11
    Text: 5 4 3.3V A0 A1 A2 GND R1 10k 8 7 6 5 VCC WP SCL SDA 2 1 3.3V U2 1 2 3 4 3 3.3V D1 1SS294 R3 ST M24C32 R5 1.5k CP1 10k P 0.1uF 3.3V R4 47 C2 12pF C1 12pF C3 22uF/16V Y1 30MHz R6 D N D 1K DPC 5V 2.5V 3.3V R7 1K R13 4 3 2 1 R10 1.5K 1% R11 39(1%) R12 39(1%)


    Original     		1SS294 M24C32 22uF/16V 30MHz VDD25 VDD33 IDED10 IDED11 IDED12 NEC TANTAL Tantal 22uF/16V 10uF/16V tantal CP24 LT1761ES5-3.3 tantal NMR14 1SS294 DD10 DD11 PDF

    1SS294

    Abstract: SOT23 DIODE marking CODE AV
    Text: Certificate TH97/10561QM 1SS294 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE SOT-23 PRV : 45 Volts Io : 100 mA 0.100 0.013 1.40 0.95 0.50 0.35 Small surface mounting type Low forward voltage Low reverse current Pb / RoHS Free 3 1 2 1.65 1.20 3.0 2.2 3.10


    Original     		TH97/10561QM 1SS294 OT-23 TW00/17276EM OT-23 1SS294 SOT23 DIODE marking CODE AV PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS294 TO SHIBA TOSHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING. + 0.5 2.5-0.3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59 • • •


    OCR Scan     		1SS294 SS294 SC-59 PDF

    SMD SOT23 A9

    Abstract: diode MARKING A9 transistor marking A9 Diodes smd A9 1ss294 A9 SOT-23 smd diode a9 smd A9 st 2901 marking a9 1SS294
    Text: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS294 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage: VF 3 = 0.54 V(Typ). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A(Max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1


    Original     		1SS294 OT-23 SMD SOT23 A9 diode MARKING A9 transistor marking A9 Diodes smd A9 1ss294 A9 SOT-23 smd diode a9 smd A9 st 2901 marking a9 1SS294 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse surrent : IR = 5µA (max) Small package : SC−59 Maximum Ratings (Ta = 25°°C) Characteristic


    Original     		1SS294 SC-59 O-236MOD 25used PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS294 Features • • • • • Halogen free available upon request by adding suffix "-HF" Low Current Leakage.


    Original     		1SS294 OT-23 150mW OT-23 100mA 300mA 150mW PDF

    1SS294

    Abstract: No abstract text available
    Text: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse surrent : IR = 5 A (max) z Small package : SC−59 Absolute Maximum Ratings (Ta = 25°C)


    Original     		1SS294 SC-59 O-236MOD 1SS294 PDF

    1S1585

    Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
    Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80


    OCR Scan     		OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241 PDF

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 PDF

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF