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    1SS308 Search Results

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    1SS308 Price and Stock

    Toshiba America Electronic Components 1SS308(TE85L,F

    DIODE ARRAY GP 80V 100MA SMV
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    DigiKey 1SS308(TE85L,F Cut Tape 10,031 1
    • 1 $0.35
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    • 1000 $0.08971
    • 10000 $0.08971
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    1SS308(TE85L,F Digi-Reel 10,031 1
    • 1 $0.35
    • 10 $0.217
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    • 1000 $0.08971
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    1SS308(TE85L,F Reel 9,000 3,000
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    Mouser Electronics 1SS308(TE85L,F 7,542
    • 1 $0.29
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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1SS308(TE85L,F) 8,428
    • 1 $0.595
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    • 10000 $0.1785
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    Chip One Stop 1SS308(TE85L,F) Cut Tape 552
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    • 1000 $0.0662
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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1SS308(TE85L) 6,152
    • 1 $0.68
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    1SS308 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS308 Kexin Ultra High Speed Switching Application Original PDF
    1SS308 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
    1SS308 TY Semiconductor Ultra High Speed Switching Application - SOT-153 Original PDF
    1SS308 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS308 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS308 Toshiba Toshiba Shortform Catalog Scan PDF
    1SS308 Toshiba DIODE SILICON EPITAXIAL PLANAR TYPE Scan PDF
    1SS308 Toshiba DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) Scan PDF
    1SS308TE85L Toshiba 1SS308 - DIODE 0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS308(TE85L,F Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY GP 80V 100MA SC74A Original PDF
    1SS308TE85LF Toshiba 1SS308TE85LF - Diode Switching 85V 0.1A 5-Pin SMV T/R Original PDF
    1SS308(TE85L,F) Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SW 80V 100MA SMV Original PDF
    1SS308TE85R Toshiba 1SS308 - DIODE 0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF

    1SS308 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    marking A1

    Abstract: 1SS308
    Text: Diodes SMD Type Ultra High Speed Switching Applications 1SS308 Unit: mm 4 5 Features Low forward voltage: VF 3 = 0.92V (typ.) Fast reverse recovery time:trr = 1.6ns(typ.) 1 Small total Capacitance:CT = 2.2pF(typ.) 2 3 A bsolute M axim um R atings T a = 25


    Original
    1SS308 marking A1 1SS308 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS308 Unit: mm 4 5 Features Low forward voltage: VF 3 = 0.92V (typ.) Fast reverse recovery time:trr = 1.6ns(typ.) 1 Small total Capacitance:CT = 2.2pF(typ.) 2 3 A bsolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage


    Original
    1SS308 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS308 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS308 Ultra High Speed Switching Applications l Small package : SC-74A l Low forward voltage : VF 3 = 0.92V (typ.) Unit: mm l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 2.2pF (typ.)


    Original
    1SS308 SC-74A 100mA PDF

    1SS308

    Abstract: No abstract text available
    Text: 1SS308 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS308 ○ 超高速度スイッチング用 : : : : 外形が小さい。 順方向特性が良い。 逆回復時間が短い。 端子間容量が小さい。 SC-74A VF 3 = 0.92V (標準)


    Original
    1SS308 SC-74A 100mA 1SS308 PDF

    1SS308

    Abstract: No abstract text available
    Text: 1SS308 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS308 Ultra High Speed Switching Applications z Small package : SC-74A z Low forward voltage : VF 3 = 0.92V (typ.) Unit: mm z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.)


    Original
    1SS308 SC-74A 1SS308 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS308 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS308 Ultra High Speed Switching Applications Unit in mm Small package : SC-74A Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)


    Original
    1SS308 SC-74A 961001EAA2' PDF

    1SS308

    Abstract: No abstract text available
    Text: 1SS308 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS308 Ultra High Speed Switching Applications Small package : SC-74A Low forward voltage : VF 3 = 0.92V (typ.) Unit: mm Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)


    Original
    1SS308 SC-74A 1SS308 PDF

    1SS308

    Abstract: No abstract text available
    Text: 1SS308 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS308 Ultra High Speed Switching Applications z Small package : SC-74A z Low forward voltage : VF 3 = 0.92V (typ.) Unit: mm z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.)


    Original
    1SS308 SC-74A 1SS308 PDF

    4558 dd

    Abstract: 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN
    Text: F5/F6 Type No. 1 1 öS Max. Rating V r V SMV/SM6 USV/US8 Structure P(mW)* IO(mA) SMV/SM6 USVAJS6 Connection Mark 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 HN1D02F HN1D02FU 80 100 300


    OCR Scan
    1SS308 1SS181 1SS309 1SS184 HN1D01F HN1D01FU HN1D02F HN1D02FU 1SS184X2 4558 dd 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN PDF

    1SS309

    Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
    Text: - 1 74 nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)


    OCR Scan
    1SS309 MA122 MA123 30MAX ES1100 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 PDF

    1SS309

    Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 DA6PC
    Text: 17 4 - - nï m it « s fe aï V r rm Vr V (V) (fliA) 80 80 300 300 Io ,If* I fm <°C) (nA) I fsm cc> (A) 1SS308 1SS309 DA-3N DA-3P DA-4N * ') *s y * y -y y 85 85 35 35 35 DA-4P DA-6NC DA-6PC DA-8N DA-8P * * * * * y y y •) ') V y y * y î? y & y 35 35 35


    OCR Scan
    1SS309 MA123 E1388 11MIN -16UNF' 48MAX DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 DA6PC PDF

    628B

    Abstract: 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
    Text: - 1 74 - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)


    OCR Scan
    1SS309 IMP11 DAP202Kia LB1105M MA6S121 MA6S718 100MHz) MA122 MA123 628B DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 PDF

    1SS308

    Abstract: No abstract text available
    Text: TOSHIBA 1SS308 1 SS308 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIONS. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-74A : V f 3 = 0.92V (Typ.)


    OCR Scan
    1SS308 SC-74A 961001EAA2' 1SS308 PDF

    1SS308

    Abstract: No abstract text available
    Text: 1SS308 SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. + 0.2 . Small Package SC-59 MOD 2.8-0.3 . Low Forward Voltage V f = 0.92V Typ. 1 .6 - 0 1 f02 . Fast Reverse Recovery Time trr= l »6ns(Typ.) . Small Total Capacitance CT= 2 .2pF(Typ.)


    OCR Scan
    1SS308 SC-59 100mA 1SS308 PDF

    PC802

    Abstract: DAP803 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803
    Text: 1 74 - - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N * * s ' * s y y -y y Vr V) (V) (fliA) 80 80 300 300 85 85 35 35 35 fe aï V r rm Io ,If* I fm <°C) (nA) I fsm cc> (A) Vpmax IR'JWl m * iS Æ ism tÉ (WJAfc I Rmax fk ñ (V) I F <mA) ( ß A) V f (V) <°C)


    OCR Scan
    1SS309 MA6S121 MA6S718 100MHz) MA122 MA123 PC802 DAP803 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS308 1SS308 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. + 0.2 2 . 8 - 0 .3 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance +0.2 : SC-74A : Vp 3 = 0.92V (Typ.)


    OCR Scan
    1SS308 SC-74A 961001EAA2' PDF

    DAP801

    Abstract: DA-6NC DAP803 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802
    Text: - 1 74 nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' * s * y y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)


    OCR Scan
    1SS309 25MAX 24MIN 25M1N 25MIN 51IAX 12MIN DAP801 DA-6NC DAP803 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 PDF

    DA-4P

    Abstract: 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
    Text: 174 - - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N * * s ' * s y y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m * iSÆismtÉ (WJAfc I Rmax fk ñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)


    OCR Scan
    1SS309 MA122 MA123 EI494 DA-4P DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 PDF

    V8580

    Abstract: No abstract text available
    Text: TO SHIBA 1SS308 1SS308 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. + 0.2 2.8-0.3 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance +0.2 1 . 6 - 0.1 : SC-74A


    OCR Scan
    1SS308 SC-74A 961001EAA2' V8580 PDF

    DAN802

    Abstract: DAP803 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN803 DAP401
    Text: - 1 74 nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)


    OCR Scan
    1SS309 MA6S718 100MHz) MA122 MA123 HI629 DAN802 DAP803 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN803 DAP401 PDF

    644b

    Abstract: 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
    Text: - 1 74 nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)


    OCR Scan
    1SS309 LB1105M MA6S121 MA6S718 100MHz) MA122 MA123 644b DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 PDF

    ic vrm

    Abstract: No abstract text available
    Text: TOSHIBA 1SS308 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS3Q8 ULTRA HIGH SPEED SWITCHING APPLICATIONS. U n it in mm + 0.2 1 .8 -0.3 + 0.2 .6 • Sm a ll Package : SC-74A • Low Forw ard Voltage : V jr 3 = 0.92V (Typ.) • Fa st Reverse Recovery Tim e :


    OCR Scan
    1SS308 SC-74A 961001EAA2' ic vrm PDF

    644b

    Abstract: 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
    Text: - 174 - nï m fe aï Vpmax m* iS Æ ism tÉ WJAfc I Rmax fkñ (V I F <mA) ( ß A) V f (V) IR'JWl it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ') *s y * y -y y V r rm Vr (V) (V) (fliA) 80 80 300 300 85 85 35 35 35 Io ,If* I fm <°C) (nA) I fsm cc> (A) <°C)


    OCR Scan
    1SS309 DAN202KtB IMP11 DAP202Kia LB1105M MA6S121 MA6S718 100MHz) MA122 MA123 644b DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 PDF

    DA-6NC

    Abstract: PC802 628B 644b 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801
    Text: 174 - - nï m it « s 1SS308 1SS309 D A -3 N D A -3 P D A -4 N * * ' *s y y -y y D A -4 P D A -6 N C D A -6 P C D A -8 N D A -8 P * * * * * y y y •) ') DAN401 D AN 403 DAN 601 DAN 801 D AN 802 n n a D n — — — — — V y Vr V ) (V ) (fliA) 80 80


    OCR Scan
    1SS309 DAN202KtB IMP11 DAP202Kia LB1105M MA6S121 MA6S718 100MHz) MA122 MA123 DA-6NC PC802 628B 644b DAN-10 DAN401 DAN403 DAN601 DAN801 PDF