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    Toshiba America Electronic Components 1SS382TE85LF

    DIODE ARRAY GEN PURP 80V 100MA
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    DigiKey 1SS382TE85LF Cut Tape 15,362 1
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    1SS382TE85LF Digi-Reel 15,362 1
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    1SS382TE85LF Reel 12,000 3,000
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    Mouser Electronics 1SS382TE85LF 4,067
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    Bristol Electronics 1SS382TE85LF 3,465
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    Quest Components 1SS382TE85LF 2,772
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    EBV Elektronik 1SS382TE85LF 13 Weeks 1
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    Win Source Electronics 1SS382TE85LF 145,900
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    Toshiba America Electronic Components 1SS382(TE85L,F)

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    Quest Components 1SS382(TE85L,F) 11,276
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    Avnet Asia 1SS382(TE85L,F) 24 Weeks 3,000
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    Chip One Stop 1SS382(TE85L,F) Cut Tape 3,040
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    Toshiba America Electronic Components 1SS382

    DIODE ARRAY GP 80V 100MA USQ
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    Win Source Electronics 1SS382 145,700
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    Toshiba America Electronic Components 1SS382(TE85L)

    Rectifier Diode Switching 85V 0.1A 4ns 4-Pin USQ T/R
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    Win Source Electronics 1SS382(TE85L) 145,000
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    1SS382 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS382 Toshiba Japanese - Diodes Original PDF
    1SS382 Toshiba Diode - Silicon Epitaxial Pin Type Original PDF
    1SS382 Toshiba DIODE (ULTRA HIGH SPEED SWITCHING APLICATION) Scan PDF
    1SS382 Toshiba DIODE Scan PDF
    1SS382TE85LF Toshiba 1SS382TE85LF - Diode Switching 85V 0.3A 4-Pin USQ T/R Original PDF

    1SS382 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm l Small package l Composed of 2 independent diodes. l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : Trr = 1.6ns (typ.) Maximum Ratings (Ta = 25°C)


    Original     		1SS382 100mA PDF

    1SS382

    Abstract: No abstract text available
    Text: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm Small package Composed of 2 independent diodes. Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : Trr = 1.6ns (typ.) Maximum Ratings (Ta = 25°C)


    Original     		1SS382 1SS382 PDF

    1SS382

    Abstract: No abstract text available
    Text: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm l Small package l Composed of 2 independent diodes. l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : Trr = 1.6ns (typ.) Maximum Ratings (Ta = 25°C)


    Original     		1SS382 1SS382 PDF

    1SS382

    Abstract: No abstract text available
    Text: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : Trr = 1.6ns (typ.) Absolute Maximum Ratings (Ta = 25°C)


    Original     		1SS382 1SS382 PDF

    1SS382

    Abstract: No abstract text available
    Text: 1SS382 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS382 ○ 超高速スイッチング用 単位: mm z 4 端子超小型外囲器に独立したダイオードを 2 個搭載しており 超高密度実装に最適です。 z 順方向電圧が低い。


    Original     		1SS382 100mA 1SS382 PDF

    1SS382

    Abstract: No abstract text available
    Text: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : Trr = 1.6ns (typ.) Absolute Maximum Ratings (Ta = 25°C)


    Original     		1SS382 1SS382 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : Trr = 1.6ns (typ.) Absolute Maximum Ratings (Ta = 25°C)


    Original     		1SS382 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm Small package Composed of 2 independent diodes. Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : Trr = 1.6ns (typ.) Maximum Ratings (Ta = 25°C)


    Original     		1SS382 961001EAA2' PDF

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24 PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    LT 543 common cathode

    Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current


    Original     		2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor PDF

    CMZB220

    Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
    Text: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード


    Original     		SCJ0004R TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CMZB220 CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B PDF

    HN4C06J

    Abstract: te85l F 1SS302 2SC4117 SUFFIX TE85L Toshiba 2SK2145 HN1B04FE rn4983 US6 KEC RN1306
    Text: Small-Signal Multi-Chip Discrete Devices Transistors and Diodes PRODUCT GUIDE Contents What Is a Multi-Chip Discrete Device? • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 2


    Original     		PDF

    CMG03

    Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		SCE0004I TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 CMG03 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01 PDF

    2fu smd transistor

    Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG02 O-220SM CRG01 CRG04 CMG03 2fu smd transistor 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B PDF

    DF2S3.6SC

    Abstract: CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS
    Text: 東芝半導体製品総覧表 2010 年 1 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		SCJ0004O TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 DF2S3.6SC CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS PDF

    smd diode Lz zener

    Abstract: CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2011/9 SCE0004L Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		SCE0004L TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 smd diode Lz zener CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B PDF

    1SS382

    Abstract: No abstract text available
    Text: TOSHIBA 1SS382 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS382 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION 2.1 ± 0.1 • • • • Small Package Composed of 2 independentdiodes. Low Forward Voltage : Vp 3 = 0.92V (TYP.) Fast Reverse Recovery Time : trr= 1.6ns (TYP.)


    OCR Scan     		1SS382 961001EAA2' 1SS382 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS382 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS382 ULTRA HIGH SPEED SWITCHING APPLICATION • • • • Small Package Composed of 2 independentdiodes. Low Forward Voitage : Vy 3 = 0.9 2V (TYP.) Fast Reverse Recovery Time ; trr = 1.6ns (TYP,)


    OCR Scan     		1SS382 961001EAA2' PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS382 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS382 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION 2.1 ± 0.1 • • • • j1. 25± Small Package Composed of 2 independentdiodes. Low Forward Voltage : Vp 3 = 0.92V (TYP.) Fast Reverse Recovery Time : trr= 1.6ns (TYP.)


    OCR Scan     		1SS382 961001EAA2' PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS382 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS382 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION 2.1 ± 0.1 • • • • j1. 25± Small Package Composed of 2 independentdiodes. Low Forward Voltage : Vp 3 = 0.92V (TYP.) Fast Reverse Recovery Time : trr= 1.6ns (TYP.)


    OCR Scan     		1SS382 961001EAA2' PDF