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    1SS416 Price and Stock

    Toshiba America Electronic Components 1SS416CT,L3F

    DIODE SCHOTTKY 30V 100MA CST2
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    DigiKey 1SS416CT,L3F Digi-Reel 74,686 1
    • 1 $0.16
    • 10 $0.109
    • 100 $0.16
    • 1000 $0.04994
    • 10000 $0.03927
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    1SS416CT,L3F Cut Tape 74,686 1
    • 1 $0.16
    • 10 $0.109
    • 100 $0.16
    • 1000 $0.04994
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    1SS416CT,L3F Reel 50,000 10,000
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    Avnet Americas 1SS416CT,L3F Reel 20 Weeks 10,000
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    Mouser Electronics 1SS416CT,L3F 26,015
    • 1 $0.16
    • 10 $0.109
    • 100 $0.056
    • 1000 $0.045
    • 10000 $0.035
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    Toshiba America Electronic Components 1SS416,L3M

    DIODE SCHOTTKY 30V 100MA SOD923
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    DigiKey 1SS416,L3M Cut Tape 32,647 1
    • 1 $0.15
    • 10 $0.102
    • 100 $0.15
    • 1000 $0.04633
    • 10000 $0.03635
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    1SS416,L3M Digi-Reel 32,647 1
    • 1 $0.15
    • 10 $0.102
    • 100 $0.15
    • 1000 $0.04633
    • 10000 $0.03635
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    1SS416,L3M Reel 20,000 10,000
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    Avnet Americas 1SS416,L3M Reel 10,000 12 Weeks 10,000
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    • 10000 $0.0306
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    Mouser Electronics 1SS416,L3M 22,523
    • 1 $0.15
    • 10 $0.102
    • 100 $0.052
    • 1000 $0.042
    • 10000 $0.033
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    EBV Elektronik 1SS416,L3M 13 Weeks 1
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    Toshiba America Electronic Components 1SS416(TL3,T)

    Diode Small Signal Schottky 35V 0.2A 2-Pin fSC - Tape and Reel (Alt: 1SS416(TL3,T))
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    Avnet Americas 1SS416(TL3,T) Reel 10,000
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    Toshiba America Electronic Components 1SS416(TL4,D)

    Diode Small Signal Schottky 35V 0.1A 2-Pin fSC - Tape and Reel (Alt: 1SS416(TL4,D))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 1SS416(TL4,D) Reel 16 Weeks 8,000
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    Rochester Electronics 1SS416(TL4,D) 176,000 1
    • 1 $0.0406
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    • 100 $0.0382
    • 1000 $0.0345
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    Toshiba America Electronic Components 1SS416,L3M(T

    Diode Small Signal Schottky Si 35V 0.1A 2-Pin SOD-923 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 1SS416,L3M(T 89,301 652
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    • 1000 $0.0422
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    1SS416,L3M(T 1,658 466
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    • 1000 $0.0524
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    Newark 1SS416,L3M(T Cut Tape 10,000 5
    • 1 $0.233
    • 10 $0.18
    • 100 $0.075
    • 1000 $0.045
    • 10000 $0.045
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    Chip1Stop 1SS416,L3M(T Cut Tape 89,301
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    • 100 $0.0437
    • 1000 $0.0338
    • 10000 $0.029
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    1SS416,L3M(T Cut Tape 1,658
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    • 100 $0.0576
    • 1000 $0.0419
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    Find more 1SS416 price and stock on Findchips.com

    1SS416 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS416 Toshiba Diode Silicon Epitaxial Schottky Barrier Type Original PDF
    1SS416,L3M Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 30V 100MA FSC Original PDF
    1SS416CT Toshiba 1SS416 - DIODE 0.1 A, 35 V, SILICON, SIGNAL DIODE, CST2, 1-1P1A, 2 PIN, Signal Diode Original PDF
    1SS416CT Toshiba Japanese - Diodes Original PDF
    1SS416CT Toshiba Diodes Original PDF
    1SS416CT,L3F Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 30V 100MA FSC Original PDF
    1SS416CT(TPL3) Toshiba Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 100MA CST2 Original PDF
    1SS416CT(TPL3) Toshiba 1SS416 - Schottky (Diodes & Rectifiers) Hi-Speed 30V 100mA Original PDF
    1SS416(TL3,T) Toshiba Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 100MA FSC Original PDF
    1SS416(TL3,T) Toshiba 1SS416 - Diode Small Signal Schottky 35V 0.2A 2-Pin fSC Original PDF
    1SS416(TL4,D) Toshiba Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 0.1A FSC Original PDF
    1SS416(TL4,D) Toshiba 1SS416 - X34 PB-F FSC SBDIODE(LF), IF = 5MA Original PDF
    1SS416TS Toshiba 1SS416 - DIODE 0.1 A, 35 V, SILICON, SIGNAL DIODE, FSC2, 1-1X1A, 2 PIN, Signal Diode Original PDF

    1SS416 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1SS416

    Abstract: No abstract text available
    Text: 1SS416 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416 High Speed Switching Application Unit: mm 0.6±0.05 A Characteristic Maximum peak reverse voltage Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200


    Original     		PDF 1SS416 1SS416

    1SS416

    Abstract: No abstract text available
    Text: 1SS416 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS416 ○ 高速スイッチング用 単位: mm 0.6±0.05 ん 頭 逆 逆 電 電 定格 単位 圧 VRM 35 V 圧 VR 30 V せ ん 頭 順 電 流 IFM 200 mA 平 均


    Original     		PDF 1SS416 1SS416

    Untitled

    Abstract: No abstract text available
    Text: 1SS416CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT Unit: mm High Speed Switching Application Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200


    Original     		PDF 1SS416CT

    Untitled

    Abstract: No abstract text available
    Text: 1SS416 Schottky Barrier Diode Silicon Epitaxial 1SS416 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode SOD-923 1: Cathode 2: Anode fSC Start of commercial production 1 2003-06 2014-07-08 Rev.3.0 1SS416 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 )


    Original     		PDF 1SS416 OD-923

    1SS416

    Abstract: No abstract text available
    Text: 1SS416 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416 High Speed Switching Application Unit: mm 0.6±0.05 Symbol Rating Unit 0.07 M A Maximum peak reverse voltage VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200 mA Average forward current


    Original     		PDF 1SS416 1SS416

    1SS416TS

    Abstract: No abstract text available
    Text: 1SS416TS 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS416TS ○ 高速スイッチング用 単位: mm z 2 端子小型外囲器なので高密度実装に最適です。 z 順方向電圧が低い。 : VF = 0.24V 標準 @IF = 5mA


    Original     		PDF 1SS416TS 20mmx20mm, 1SS416TS

    1SS416CT

    Abstract: No abstract text available
    Text: 1SS416CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT Unit: mm High Speed Switching Application Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200


    Original     		PDF 1SS416CT 1SS416CT

    Untitled

    Abstract: No abstract text available
    Text: 1SS416 Schottky Barrier Diode Silicon Epitaxial 1SS416 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode fSC SOD-923 1: Cathode 2: Anode fSC Start of commercial production 1 2003-06 2014-04-14 Rev.2.0 1SS416 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )


    Original     		PDF 1SS416 OD-923)

    Untitled

    Abstract: No abstract text available
    Text: 1SS416TS TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416TS High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF = 0.24V typ. @IF = 5mA 0.6±0.05 Reverse voltage VRM 35 V VR 30 V Maximum (peak) forward current IFM


    Original     		PDF 1SS416TS

    1SS416CT

    Abstract: No abstract text available
    Text: 1SS416CT 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS416CT ○ 高速スイッチング用 単位: mm 絶対最大定格 Ta = 25°C 項目 せ ん 頭 逆 逆 電 電 記号 定格 単位 圧 VRM 35 V 圧 VR 30 V


    Original     		PDF 1SS416CT 1SS416CT

    Untitled

    Abstract: No abstract text available
    Text: 1SS416 Schottky Barrier Diode Silicon Epitaxial 1SS416 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode fSC SOD-923 1: Cathode 2: Anode fSC 1 2014-02-13 Rev.1.0 1SS416 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )


    Original     		PDF 1SS416 OD-923)

    1SS416

    Abstract: No abstract text available
    Text: 1SS416 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416 High Speed Switching Application Unit: mm 0.6±0.05 Symbol Rating Unit 0.07 M A Maximum peak reverse voltage VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200 mA Average forward current


    Original     		PDF 1SS416 1SS416

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    DF2S3.6SC

    Abstract: TC7SZ34FU FSV 052 TC7SZ34F TC7SZ17FU 1SS421 TC7SZ02F TC7SZ08FU 1SS417 TC7SZ00AFS
    Text: 【正誤表】 下記内容に誤記載がありましたので正誤表を添付させていただきます。 •資料名: 汎用小信号面実装対応素子 （トランジスタ、 ダイオード、 セルパック） ■資料番号： BCJ0052E


    Original     		PDF BCJ0052E RN1310 RN2310 RN1303 RN2303 RN1302 RN2302 RN1304 RN2307 DF2S3.6SC TC7SZ34FU FSV 052 TC7SZ34F TC7SZ17FU 1SS421 TC7SZ02F TC7SZ08FU 1SS417 TC7SZ00AFS

    LT 543 common cathode

    Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current


    Original     		PDF 2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


    Original     		PDF TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558

    CMZB220

    Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
    Text: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード


    Original     		PDF SCJ0004R TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CMZB220 CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B

    CMG03

    Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF SCE0004I TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 CMG03 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01

    2fu smd transistor

    Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG02 O-220SM CRG01 CRG04 CMG03 2fu smd transistor 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B

    S78DM12Q

    Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
    Text: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power


    Original     		PDF SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300

    DF2S3.6SC

    Abstract: CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS
    Text: 東芝半導体製品総覧表 2010 年 1 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004O TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 DF2S3.6SC CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS