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    Toshiba America Electronic Components 1SV276(TPH3)

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    Bristol Electronics 1SV276(TPH3) 1,671
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    Quest Components 1SV276(TPH3) 1,336
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    Toshiba America Electronic Components 1SV276

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1SV276 6,080
    • 1 $1.6
    • 10 $1.6
    • 100 $1.6
    • 1000 $1.6
    • 10000 $0.48
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    1SV276 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SV276 Kexin Variable Capacitance Diode (VCO for UHF Band Radio) Original PDF
    1SV276 Toshiba variable capacitance diode Original PDF
    1SV276 TY Semiconductor Variable Capacitance Diode (VCO for UHF Band Radio) - SOD-323 Original PDF
    1SV276 Toshiba DIODE VAR CAP SINGLE 10V 15PF 2(1-1E1A) Scan PDF
    1SV276 Toshiba Variable Capacitance Diode Silicon Epitaxial Planar Type Scan PDF
    1SV276 Toshiba Variable capacitance silicon diode using as VCO for UHF band radio Scan PDF
    1SV276TPH3 Toshiba 1SV276TPH3 - Diode VAR Cap Single 10V 15pF 2-Pin USC T/R Original PDF
    1SV276(TPH3) Toshiba DIODE VAR CAP SINGLE 10V 15PF 2(1-1E1A) T/R Scan PDF
    1SV276TPH3F Toshiba 1SV276 - Varactor Diodes 10V C1=15-17pF Original PDF

    1SV276 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1SV276

    Abstract: No abstract text available
    Text: 20010110 1SV276 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz~3 GHz REVERSE VOLTAGE RANGE: VR = 0.5V ~ 4 V


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    PDF 1SV276 55E-16 00E-04 485E-11 00E-09

    Untitled

    Abstract: No abstract text available
    Text: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. · Low series resistance: rs = 0.22 Ω (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics


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    PDF 1SV276

    1SV276

    Abstract: No abstract text available
    Text: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.0 typ. • Low series resistance: rs = 0.22 Ω (typ.) • Small package Absolute Maximum Ratings (Ta = 25°C)


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    PDF 1SV276 1SV276

    1SV276

    Abstract: No abstract text available
    Text: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. · Low series resistance: rs = 0.22 Ω (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics


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    PDF 1SV276 1SV276

    1SV276

    Abstract: No abstract text available
    Text: 1SV276 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 1SV276 ○ UHF 帯無線 VCO 用 単位: mm • 容量変化比が大きい。 : C1V/C4V = 2.0 標準 • 直列抵抗が小さい。 : rs = 0.22 Ω (標準) • 2 端子小型外囲器なので、チューナの小型化に適しています。


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    PDF 1SV276 1SV276

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SV276 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V = 2.0Typ. Low Series Resistance:rs = 0.22 +0.1 2.6-0.1 1.0max Typ.) 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25


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    PDF 1SV276 OD-323 Capacitanc75

    marking tl

    Abstract: diode marking tl diode smd marking 22 1SV276
    Text: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV276 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V = 2.0Typ. Low Series Resistance:rs = 0.22 +0.1 2.6-0.1 1.0max Typ.) 0.375 +0.05 0.1-0.02


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    PDF 1SV276 OD-323 10max marking tl diode marking tl diode smd marking 22 1SV276

    02 diode R-1

    Abstract: 1SV276
    Text: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. • Low series resistance: rs = 0.22 Ω (typ.) • Small package Maximum Ratings (Ta = 25°C)


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    PDF 1SV276 02 diode R-1 1SV276

    1SV276

    Abstract: No abstract text available
    Text: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.0 typ. • Low series resistance: rs = 0.22 Ω (typ.) • Small package Absolute Maximum Ratings (Ta = 25°C)


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    PDF 1SV276 1SV276

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


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    PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


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    PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    TA4029CTC

    Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
    Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8


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    PDF BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X

    tcxo philips 4322

    Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
    Text: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The


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    PDF

    JDV2S31CT

    Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。


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    PDF BCJ0003F BCJ0003E JDV2S31CT 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000

    Untitled

    Abstract: No abstract text available
    Text: 1SV276 TO SHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.0 Typ. Low Series Resistance : rs = 0.22H (Typ.) Small Package M A X IM U M RATINGS (Ta = 25°C)


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    PDF 1SV276

    Untitled

    Abstract: No abstract text available
    Text: 1SV276 T O SH IB A TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE 1 S V2 7 6 Unit in mm High Capacitance Ratio : C iy /C 4 v = 2.0 Typ. Low Series Resistance : r$ = 0.22il (Typ.) Small Package MAXIMUM RATINGS (Ta = 25°C)


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    PDF 1SV276

    1SV276

    Abstract: No abstract text available
    Text: 1SV276 TOSHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.0 Typ. Low Series Resistance : rs = 0.220 (Typ.) Small Package M A X IM U M RATINGS (Ta = 25°C)


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    PDF 1SV276 1SV276

    Untitled

    Abstract: No abstract text available
    Text: 1SV276 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 7 6 VCO FOR UHF BAND RADIO Unit in mm • High Capacitance Ratio : C iy /C 4y = 2.0 Typ. • Low Series Resistance : rs = 0.220 (Typ.) • Small Package 0 ± 0 .0 5 MAXIMUM RATINGS (Ta = 25°C)


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    PDF 1SV276

    1SV276

    Abstract: 300E
    Text: 1SV276 TOSHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.0 Typ. Low Series Resistance : rs = 0.220 (Typ.) Small Package 0 ± 0 .0 5 M A X IM U M RATINGS (Ta = 25°C)


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    PDF 1SV276 1SV276 300E

    1SV276

    Abstract: No abstract text available
    Text: 1SV276 TO SHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iy /C 4 Y = 2.0 Typ. Low Series Resistance : rs = 0.220 (Typ.) Small Package 0± 0.05 M A X IM U M RATINGS (Ta = 25°C)


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    PDF 1SV276 470MHz

    Untitled

    Abstract: No abstract text available
    Text: 1SV276 TO SHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.0 Typ. Low Series Resistance : rs = 0.22H (Typ.) Small Package 0±0.05 M A X IM U M RATINGS (Ta = 25°C)


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    PDF 1SV276

    marking 16

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV276 VCO FOR UHF BAND RADIO • • • High C apacitance Ratio : C j V ''C 4 V = 2.0 Typ. Low Series R esistance : r s = 0.22Sl (Typ.) Sm all Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 1SV276 marking 16

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    Abstract: No abstract text available
    Text: 1SV276 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE 1 SV2 7 6 Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.0 Typ. Low Series Resistance : rs = 0.220 (Typ.) Small Package MAXIMUM RATINGS (Ta = 25°C)


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    PDF 1SV276