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    1SV277 Search Results

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    1SV277 Price and Stock

    Toshiba America Electronic Components 1SV277TPH3F

    DIODE VARICAP VCO UHF USC
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    DigiKey 1SV277TPH3F Cut Tape 2,465 1
    • 1 $0.42
    • 10 $0.259
    • 100 $0.42
    • 1000 $0.10883
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    1SV277TPH3F Digi-Reel 2,465 1
    • 1 $0.42
    • 10 $0.259
    • 100 $0.42
    • 1000 $0.10883
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    1SV277TPH3F Reel 3,000
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    • 10000 $0.09177
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    Avnet Americas 1SV277TPH3F Reel 20 Weeks 3,000
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    • 10000 $0.0745
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    Mouser Electronics 1SV277TPH3F 2,910
    • 1 $0.31
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    • 100 $0.143
    • 1000 $0.096
    • 10000 $0.065
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    Toshiba America Electronic Components 1SV277(TPH3,F)

    Varactor Diode, 4.9Pf, 10V, Sod-323 Rohs Compliant: Yes |Toshiba 1SV277(TPH3,F)
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    Newark 1SV277(TPH3,F) Cut Tape 5
    • 1 $0.437
    • 10 $0.271
    • 100 $0.129
    • 1000 $0.102
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    1SV277(TPH3,F) Reel 3,000
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    EBV Elektronik 1SV277(TPH3,F) 3,000 21 Weeks 3,000
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    New Advantage Corporation 1SV277(TPH3,F) 3,000 1
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    • 10000 $0.0919
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    Toshiba America Electronic Components 1SV277

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 1SV277 2,625 10
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    • 10 $0.525
    • 100 $0.2625
    • 1000 $0.105
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    Quest Components 1SV277 2,100
    • 1 $0.7
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    • 100 $0.21
    • 1000 $0.14
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    Toshiba America Electronic Components 1SV277-TPH3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 1SV277-TPH3 2,625 10
    • 1 -
    • 10 $0.525
    • 100 $0.2625
    • 1000 $0.105
    • 10000 $0.105
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    Quest Components 1SV277-TPH3 2,100
    • 1 $0.7
    • 10 $0.7
    • 100 $0.21
    • 1000 $0.14
    • 10000 $0.14
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    1SV277 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SV277 Kexin Variable Capacitance Diode (VCO for UHF Band Radio) Original PDF
    1SV277 Toshiba variable capacitance diode Original PDF
    1SV277 TY Semiconductor Variable Capacitance Diode (VCO for UHF Band Radio) - SOD-323 Original PDF
    1SV277 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    1SV277 Toshiba Variable capacitance silicon diode using as VCO for UHF band radio Scan PDF
    1SV277 Toshiba DIODE VAR CAP SINGLE 10V 4PF 2(1-1E1A) Scan PDF
    1SV277 Toshiba VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE Scan PDF
    1SV277TPH3 Toshiba 1SV277TPH3 - Diode VAR Cap Single 10V 4pF 2-Pin USC T/R Original PDF
    1SV277(TPH3) Toshiba DIODE VAR CAP SINGLE 10V 4PF 2(1-1E1A) T/R Scan PDF
    1SV277TPH3F Toshiba 1SV277 - Varactor Diodes 10V C1=4.0-4.9pF Original PDF

    1SV277 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1SV277

    Abstract: No abstract text available
    Text: 1SV277 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV277 VCO for UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.3 typ. • Low series resistance: rs = 0.42 Ω (typ.) • Small package Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SV277 1SV277

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SV277 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V = 2.30Typ. Low Series Resistance:rs = 0.42 +0.1 2.6-0.1 1.0max Typ.) 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25


    Original     		PDF 1SV277 OD-323 30Typ.

    Untitled

    Abstract: No abstract text available
    Text: 1SV277WT BAND SWITCHING DIODE PINNING Applications • Low loss band switching in VHF television tuners • Surface mount band-switching circuits PIN DESCRIPTION 1 Cathode 2 Anode 2 1 T Top View Marking Code: "T" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF 1SV277WT OD-523 OD-523

    1SV277

    Abstract: No abstract text available
    Text: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV277 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V = 2.30Typ. Low Series Resistance:rs = 0.42 +0.1 2.6-0.1 1.0max Typ.) 0.375 +0.05 0.1-0.02


    Original     		PDF 1SV277 OD-323 30Typ. 1SV277

    1SV277

    Abstract: No abstract text available
    Text: 1SV277 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV277 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.3 typ. • Low series resistance: rs = 0.42 Ω (typ.) • Small package Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SV277 1SV277

    Untitled

    Abstract: No abstract text available
    Text: 1SV277WT BAND-SWITCHING DIODE Features PINNING • Small plastic SMD package DESCRIPTION PIN • Continuous reverse voltage: max. 35 V 1 Cathode • Continuous forward current: max.100 mA 2 Anode • Low diode capacitance: max.1.2 pF 2 1 • Low diode forward resistance: max. 0.7 Ω


    Original     		PDF 1SV277WT OD-523 OD-523

    Untitled

    Abstract: No abstract text available
    Text: 1SV277 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV277 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.3 typ. · Low series resistance: rs = 0.42 Ω (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 1SV277

    Untitled

    Abstract: No abstract text available
    Text: 1SV277 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV277 VCO for UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.3 typ. • Low series resistance: rs = 0.42 Ω (typ.) • Small package Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SV277

    1SV277

    Abstract: No abstract text available
    Text: 1SV277 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 1SV277 ○ UHF 帯無線 VCO 用 単位: mm • 容量変化比が大きい。 : C1V/C4V = 2.3 標準 • 直列抵抗が小さい。 : rs = 0.42 Ω (標準) • 2 端子小型外囲器なので､チューナの小型化に適しています。


    Original     		PDF 1SV277 1SV277

    100MHZ

    Abstract: marking code TS
    Text: 1SV277WT BAND-SWITCHING DIODE Features PINNING • Small plastic SMD package • Continuous reverse voltage: max. 35V 1 Cathode • continuous forward current:max.100mA 2 Anode • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω.


    Original     		PDF 1SV277WT 100mA OD-523 OD-523 100MHZ marking code TS

    1SV277

    Abstract: No abstract text available
    Text: 1SV277 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV277 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.3 typ. · Low series resistance: rs = 0.42 Ω (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 1SV277 1SV277

    1SV277

    Abstract: No abstract text available
    Text: 20010110 1SV277 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 0.5V ～ 4 V


    Original     		PDF 1SV277 508E-16 00E-04 466E-12 00E-09

    100MHZ

    Abstract: No abstract text available
    Text: 1SV277WT BAND-SWITCHING DIODE Features PINNING • Small plastic SMD package • Continuous reverse voltage: max. 35V 1 Cathode • continuous forward current:max.100mA 2 Anode • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω.


    Original     		PDF 1SV277WT 100mA OD-523 OD-523 100MHZ

    marking code 62z

    Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
    Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX


    Original     		PDF HVD141/142 HZU16 HZU10 HZU18 HZU11 HZU20 HZU12 HZU22 HZU13 HZU24 marking code 62z philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent

    tcxo philips 4322

    Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
    Text: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The


    Original     		PDF

    SV277

    Abstract: No abstract text available
    Text: 1SV277 TO SHIBA 1 SV277 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.3 Typ. Low Series Resistance : rs = 0.42H (Typ.) Small Package M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SV277 SV277 SV277

    1SV277

    Abstract: No abstract text available
    Text: 1SV277 TOSHIBA 1 SV2 7 7 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.3 Typ. Low Series Resistance : rs = 0.420 (Typ.) Small Package 0 ± 0 .0 5 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SV277 1SV277

    Untitled

    Abstract: No abstract text available
    Text: 1SV277 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE 1 SV2 7 7 Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.3 Typ. Low Series Resistance : rs = 0.420 (Typ.) Small Package 0 ± 0 .0 5


    OCR Scan     		PDF 1SV277

    1SV277

    Abstract: 900E
    Text: 1SV277 TO SH IBA 1 SV2 7 7 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.3 Typ. Low Series Resistance : rs = 0.420 (Typ.) Small Package 0 ± 0 .0 5


    OCR Scan     		PDF 1SV277 1SV277 900E

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV277 V C O FOR UHF B A N D R A D IO • • • High Capacitance Ratio : C i v /,C4 V = 2.3 Typ. Low Series Resistance : rs = 0.42O (Typ.) Small Package M A X IM U M RATIN G S (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 1SV277

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SV277 1 SV2 7 7 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C iy /C 4y = 2.3 Typ. • Low Series Resistance : rs = 0.420 (Typ.) • Small Package 0± 0.05 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SV277

    Untitled

    Abstract: No abstract text available
    Text: 1SV277 TO SHIBA 1 SV277 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.3 Typ. Low Series Resistance : rs = 0.42H (Typ.) Small Package 0±0.05 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SV277 SV277

    1SV277

    Abstract: No abstract text available
    Text: 1SV277 TO SHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 7 7 Unit in mm VCO FOR UHF BAND RADIO • High Capacitance Ratio : C iy /C 4 Y = 2.3 Typ. • Low Series Resistance : rs = 0.420 (Typ.) • Small Package 0± 0.05 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SV277 470MHz 1SV277

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SV277 TOSHIBA VARIABLE CAPACITANCE DIODE U• v V W 9 SILICON EPITAXIAL PLANAR TYPE 7 7 * VCO FOR UHF BAND RADIO U nit in mm • High Capacitance Ratio : C i y / C 4 v = 2.3 Typ. • Low Series Resistance • Sm all Package : r$ = 0 .4 2 il (Typ.)


    OCR Scan     		PDF 1SV277