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    Toshiba America Electronic Components 1SV323,H3F

    Varactor Diodes Variable Cap Diode 10V Vr 4.3 0.4ohm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1SV323,H3F 31,073
    • 1 $0.19
    • 10 $0.107
    • 100 $0.063
    • 1000 $0.059
    • 10000 $0.056
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    Verical 1SV323,H3F 3,000 102
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    • 1000 $0.034
    • 10000 $0.0326
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    Arrow Electronics 1SV323,H3F Cut Strips 3,000 16 Weeks 1
    • 1 $0.1242
    • 10 $0.0738
    • 100 $0.041
    • 1000 $0.034
    • 10000 $0.0326
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    Toshiba America Electronic Components 1SV325,H3F

    Varactor Diodes ESC VARICAP DIODE IR=3nA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1SV325,H3F 4,691
    • 1 $0.38
    • 10 $0.236
    • 100 $0.131
    • 1000 $0.089
    • 10000 $0.057
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    Toshiba America Electronic Components 1SV324TPH3F

    Varactor Diodes VARICAP DIODE
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    Mouser Electronics 1SV324TPH3F 3,988
    • 1 $0.42
    • 10 $0.261
    • 100 $0.176
    • 1000 $0.114
    • 10000 $0.068
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    Verical 1SV324TPH3F 2,700 280
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    • 1000 $0.403
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    Toshiba America Electronic Components 1SV322(TPH3,F)

    Varactor Diodes Var Cap 10V Vr 29.5 pF 0.4 Ohm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1SV322(TPH3,F) 3,461
    • 1 $0.41
    • 10 $0.309
    • 100 $0.192
    • 1000 $0.104
    • 10000 $0.078
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    Verical 1SV322(TPH3,F) 2,953 335
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    • 1000 $0.403
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    HUBER+SUHNER 32061SE-29171SVCR3-29171SVCR3-2.5

    RF Cable Assemblies VITA 67.3 SMPS(f) to VITA 67.3 SMPS(f)
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    Mouser Electronics 32061SE-29171SVCR3-29171SVCR3-2.5
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    • 10 $413.56
    • 100 $413.56
    • 1000 $413.56
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    Find more 1SV32 price and stock on Findchips.com

    1SV32 Datasheets (50)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    1SV32 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SV32 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SV322 Kexin Variable Capacitance Diode (TCXO/VCO) Original PDF
    1SV322 Toshiba Variable Capacitance Diodes; Surface Mount Type: Y; Package: USC; Number of Pins: 2; Application Scope: VCXO Original PDF
    1SV322 TY Semiconductor Variable Capacitance Diode (TCXO/VCO) - SOD-323 Original PDF
    1SV322 Toshiba Diode Silicon Epitaxial Planer Type Scan PDF
    1SV322 Toshiba Scan PDF
    1SV322 Toshiba Scan PDF
    1SV322TPH3 Toshiba 1SV322TPH3 - Diode VAR Cap Single 10V 26.5pF 2-Pin USC T/R Original PDF
    1SV322(TPH3,F) Toshiba 1SV322 - DIODE VARACTOR 10V 1-1E1A Original PDF
    1SV322TPH3F Toshiba 1SV322TPH3F - Diode VAR Cap Single 10V 26.5pF 2-Pin USC T/R Original PDF
    1SV323 Toshiba Variable Capacitance Diodes; Surface Mount Type: Y; Package: ESC; Number of Pins: 2; Application Scope: VCXO Original PDF
    1SV323 Toshiba Diode Silicon Epitaxial Planner Type Scan PDF
    1SV323 Toshiba Scan PDF
    1SV323,H3F Toshiba 1SV323 - Variable Capacitance Diodes Original PDF
    1SV323(TH3,F,T) Toshiba 1SV323 - DIODE VARACTOR 10V 1-1G1A Original PDF
    1SV323TH3FT Toshiba 1SV323 - Varactor Diodes VARICAP DIODE Original PDF
    1SV323TPH3 Toshiba 1SV323TPH3 - Diode VAR Cap Single 10V 26.5pF 2-Pin ESC T/R Original PDF
    1SV323(TPH3,F) Toshiba 1SV323 - Diode VAR Cap Single 10V 26.5pF 2-Pin ESC T/R Original PDF
    1SV324 Kexin Variable Capacitance Diode (TCXO/VCO) Original PDF

    1SV32 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    1SV324

    Abstract: Diode smd marking 44 C4V4 marking V8
    Text: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV324 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V=4.3 Typ. Low Series Resistance:rs=0.4 +0.1 2.6-0.1 1.0max (Typ.) 0.475 0.375 +0.05 0.1-0.02


    Original     		1SV324 OD-323 1SV324 Diode smd marking 44 C4V4 marking V8 PDF

    1SV325

    Abstract: No abstract text available
    Text: 20010110 1SV325 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 1 ～ 4V Ta = 27℃ AMBIENT TEMPERATURE:


    Original     		1SV325 593E-15 00E-04 672E-11 00E-10 PDF

    1SV323

    Abstract: No abstract text available
    Text: 20010110 1SV323 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 1 ～ 4V Ta = 27℃ AMBIENT TEMPERATURE:


    Original     		1SV323 668E-15 00E-04 787E-11 00E-10 PDF

    1SV329

    Abstract: No abstract text available
    Text: 1SV329 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV329 VCO for UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.8 typ. • Low series resistance: rs = 0.55 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C)


    Original     		1SV329 1SV329 PDF

    1SV323

    Abstract: No abstract text available
    Text: 1SV323 東芝ダイオード シリコンエピタキシャルプレーナ形 1SV323 ○ TCXO/VCO 用 • 容量比が大きい。 単位: mm : C1 V/C4 V = 4.3 標準 • 直列抵抗が小さい。 : rs = 0.4 Ω (標準) • 2 端子小型外囲器なので､セットの小型化に適しています。


    Original     		1SV323 1SV323 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SV322 TOSHIBA 1 S V3 2 2 TOSHIBA DIODE T C X O /V C O • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C i V /C 4V = 4.3 Typ. : rs = 0.4 O (Typ.) Low Series Resistance Useful for Small Size Tuner. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		1SV322 500mVrms PDF

    1SV324

    Abstract: No abstract text available
    Text: TO SH IBA 1SV324 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 324 TCXO/VCO Unit in mm • High Capacitance Ratio : C 1V /C 4V = 4.3 Typ. • Low Series Resistance : rs = 0.4 fl (Typ.) • Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		1SV324 1SV324 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SV324 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV324 TCXO/VCO Unit: mm • High capacitance ratio: C1 V/C4 V = 4.3 typ. · Low series resistance: rs = 0.4 Ω (typ.) · Useful for small size tuner. Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		1SV324 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SV325 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV325 TCXO/VCO Unit: mm • High capacitance ratio: C1 V/C4 V = 4.3 typ. · Low series resistance: rs = 0.4 Ω (typ.) · Useful for small size tuner. Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		1SV325 PDF

    1S553T

    Abstract: 1S553 1S1923 1S1924 1S361 1S362 1S363 1S553T-HP 1S766 1S767
    Text: & 1S362 1S363 1S553T-HP tt « 1S2139-B 1S2139-C 1S2339 1S2790 1SV29 isno 1SV31 1SV32 1SV33 1SY49 1SV52 1SV53-A 1SV53-B 1SV54 1SY54-G 1SV56 1SV57 1SV71 1SV72 1SV73 1SV74 1SV89 1SV100 1SV101 1SV102 1SV103 3SV114 1SV123 1SV124 1SV125 Vrm Vr C t ,C j * p F


    OCR Scan     		30GHz 1S361 50GHz 1S362 70GHz 1S363 fc-90GHz 1S553T-HP 1S766 1SV89 1S553T 1S553 1S1923 1S1924 1S766 1S767 PDF

    1SV324

    Abstract: No abstract text available
    Text: 1SV324 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 324 T C X O /V C O • • High Capacitance Ratio : C i V /C 4V = 4.3 Typ. : rs = 0.4 O (Typ.) Low Series Resistance Useful for Small Size Tuner. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		1SV324 1SV324 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SV322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV322 TCXO/VCO Unit: mm • High capacitance ratio: C1 V/C4 V = 4.3 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		1SV322 PDF

    1SV329

    Abstract: No abstract text available
    Text: 1SV329 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV329 VCO for UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.8 typ. • Low series resistance: rs = 0.55 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C)


    Original     		1SV329 1SV329 PDF

    1SV322

    Abstract: 1-1e1a
    Text: 1SV322 東芝ダイオード シリコンエピタキシャルプレーナ形 1SV322 ○ TCXO/VCO 用 • 容量比が大きい。 単位: mm : C1 V/C4 V = 4.3 標準 • 直列抵抗が小さい。 : rs = 0.4 Ω (標準) • 2 端子小型外囲器なので､セットの小型化に適しています。


    Original     		1SV322 1SV322 1-1e1a PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SV324 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V=4.3 Typ. Low Series Resistance:rs=0.4 +0.1 2.6-0.1 1.0max (Typ.) 0.475 0.375 +0.05 0.1-0.02 Useful for Small Size Tuner


    Original     		1SV324 OD-323 PDF

    1SV323

    Abstract: No abstract text available
    Text: 1SV323 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV323 TCXO/VCO Unit: mm • High capacitance ratio: C1 V/C4 V = 4.3 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		1SV323 1SV323 PDF

    1SV322

    Abstract: No abstract text available
    Text: 1SV322 TOSHIBA 1 S V3 2 2 TOSHIBA DIODE T C X O /V C O • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C i V /C 4V = 4.3 Typ. : rs = 0.4 O (Typ.) Low Series Resistance Useful for Small Size Tuner. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		1SV322 1SV322 PDF

    1SV325

    Abstract: 7672E
    Text: TO SH IBA 1SV325 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV3 2 5 TCXO/VCO Unit in mm • High Capacitance Ratio : C 1V /C 4V = 4.3 Typ. • Low Series Resistance : rs = 0.4 fl (Typ.) • Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		1SV325 1SV325 7672E PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SV328 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV328 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.8 typ. · Low series resistance: rs = 0.55 Ω (typ.) · Useful for small size tuner. Maximum Ratings (Ta = 25°C) Characteristics


    Original     		1SV328 PDF

    1SV329

    Abstract: No abstract text available
    Text: 1SV329 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV329 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.8 typ. · Low series resistance: rs = 0.55 Ω (typ.) · Useful for small size tuner. Maximum Ratings (Ta = 25°C) Characteristics


    Original     		1SV329 1SV329 PDF

    1SV322

    Abstract: No abstract text available
    Text: 1SV322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV322 TCXO/VCO Unit: mm • High capacitance ratio: C1 V/C4 V = 4.3 typ. · Low series resistance: rs = 0.4 Ω (typ.) · Useful for small size tuner. Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		1SV322 1SV322 PDF

    1SV328

    Abstract: C4 marking diode
    Text: 1SV328 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV328 VCO for UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.8 typ. • Low series resistance: rs = 0.55 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C)


    Original     		1SV328 1SV328 C4 marking diode PDF

    1SV329

    Abstract: toshiba marking format
    Text: TO SH IBA 1SV329 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV3 2 9 VCO FOR UHF BAND RADIO Unit in mm • High Capacitance Ratio : C1V /C 4V = 2.8 Typ. • Low Series Resistance : rs = 0.55 • ü, (Typ.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		1SV329 Capac329 1SV329 toshiba marking format PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 1SV322 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V3 2 2 TCXO/VCO Unit in mm • High Capacitance Ratio : C 1V /C 4V = 4.3 Typ. • Low Series Resistance : rs = 0.4 fl (Typ.) • Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		1SV322 PDF