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    1A 300V TRANSISTOR Search Results

    1A 300V TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    H5N3004P-E Renesas Electronics Corporation Nch Single Power Mosfet 300V 25A 93Mohm To-3P Visit Renesas Electronics Corporation
    H5N3008P-E Renesas Electronics Corporation Nch Single Power Mosfet 300V 40A 69Mohm To-3P Visit Renesas Electronics Corporation
    H5N3003P-E Renesas Electronics Corporation Nch Single Power Mosfet 300V 40A 69Mohm To-3P Visit Renesas Electronics Corporation
    H5N3011P-E Renesas Electronics Corporation Nch Single Power Mosfet 300V 88A 48Mohm To-3P Visit Renesas Electronics Corporation
    RJK3008DPK-00#T0 Renesas Electronics Corporation Nch Single Power Mosfet 300V 40A 93Mohm To-3P Visit Renesas Electronics Corporation

    1A 300V TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT957 300V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > -300V • • IC = -1A high Continuous Collector Current • • ICM = -2A Peak Pulse Current Case: SOT223 Case material: molded plastic. “Green” molding compound.


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    FZT957 OT223 -300V -240mV FZT857 J-STD-020 MIL-STD-202, DS33191 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT857 300V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data •      BVCEO > 300V IC = 3.5A High Continuous Collector Current ICM = 5A Peak Pulse Current Very Low Saturation Voltage VCE sat < 155mV @ 1A


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    FZT857 OT223 155mV FZT957 AEC-Q101 DS33177 PDF

    FZT957QTA

    Abstract: FZT957
    Text: A Product Line of Diodes Incorporated Green FZT957 300V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -300V IC = -1A high Continuous Collector Current ICM = -2A Peak Pulse Current


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    FZT957 OT223 -300V -240mV FZT857 AEC-Q101 OT223 J-STD-020 FZT957 DS33191 FZT957QTA PDF

    FZT857

    Abstract: FZT957 FZT958 DSA003675
    Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT957 FZT958 ISSUE 3 - JANUARY 1996 FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteristics specified up to 1 Amp


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    OT223 FZT957 FZT958 FZT957 FZT857 FZT958 -100mA, 50MHz FZT857 DSA003675 PDF

    voltage regulators 300v dc

    Abstract: LCC3 transistors 1A 300V TRANSISTOR NPN Transistor 450v 1A npn transistors 300V 0,5a transistor 5w
    Text: 2N3439 2N3440 HIGH VOLTAGE NPN TRANSISTORS MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HIGH VOLTAGE 0.89


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    2N3439 2N3440 2N3439" 2N3439CECC 2N3439CSM4 2N3439CSM4-JQR-B 2N3439CSM4R 10/20m voltage regulators 300v dc LCC3 transistors 1A 300V TRANSISTOR NPN Transistor 450v 1A npn transistors 300V 0,5a transistor 5w PDF

    1A 300V TRANSISTOR

    Abstract: 300V transistor npn 2a NTE94 300V regulator TRANSISTOR 187
    Text: NTE94 Silicon NPN Transistor High Voltage Switch Description: The NTE94 is a silicon NPN transistor in a TO3 type case designed for medium to high voltage inverters, converters, regulators, and switching circuits. Features: D High Collector–Emitter Voltage: VCEO = 300V


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    NTE94 NTE94 200mA, 1A 300V TRANSISTOR 300V transistor npn 2a 300V regulator TRANSISTOR 187 PDF

    ZTX957

    Abstract: TO-1 amps pnp transistor DSA003780
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX957 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -710 -850 mV IC=-1A, VCE=-10V* Static Forward Current Transfer Ratio


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    ZTX957 -100mA, 50MHz -500mA, -50mA -100V -10mA, 100ms ZTX957 TO-1 amps pnp transistor DSA003780 PDF

    1A 300V TRANSISTOR

    Abstract: No abstract text available
    Text: KSC5402D/KSC5402DT NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • • D-PAK High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time


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    KSC5402D/KSC5402DT O-220 1A 300V TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time


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    KSC5338D/KSC5338DW O-220 O-220 PDF

    NPN Transistor 1.5A 300V

    Abstract: QS 100 NPN Transistor 200H NPN Transistor VCEO 1000V
    Text: KSC5402D/KSC5402DT NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • • D-PAK High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time


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    KSC5402D/KSC5402DT O-220 NPN Transistor 1.5A 300V QS 100 NPN Transistor 200H NPN Transistor VCEO 1000V PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time


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    KSC5338D/KSC5338DW O-220 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC5502 NPN Planar Silicon Transistor High Voltage Power Switch Mode Application • • • Small Variance in Storage Time Wide Safe Operating Area Suitable for ElectronicBallast Application Equivalent Circuit C B 1 TO-220 E 1.Base Absolute Maximum Ratings *


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    KSC5502 O-220 KSC5502 PDF

    J5502

    Abstract: KSC5502TU KSC5502 transistor npn 12V 1A Collector Current NPN Transistor 600V TO-220 vbe 12v, vce 600v NPN Transistor
    Text: KSC5502 NPN Planar Silicon Transistor High Voltage Power Switch Mode Application • Small Variance in Storage Time • Wide Safe Operating Area • Suitable for Electronic Ballast Application Equivalent Circuit C B 1 TO-220 E 1.Base Absolute Maximum Ratings *


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    KSC5502 O-220 KSC5502 J5502 KSC5502TU transistor npn 12V 1A Collector Current NPN Transistor 600V TO-220 vbe 12v, vce 600v NPN Transistor PDF

    JANS2N2484

    Abstract: JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373
    Text: JANS QUALIFIED BI-POLAR TRANSISTORS* Part # JANS QUALIFIED BI-POLAR TRANSISTORS* Type Voltage hFE @ Ic Rated Ic Package JANS QUALIFIED BI-POLAR TRANSISTORS* JANS QUALIFIED BI-POLAR TRANSISTORS* Part # Slash Sheet Type Voltage hFE @ Ic Rated Ic Package JANS2N930


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    JANS2N930 JANS2N930UB JANS2N2218 JANS2N2218A JANS2N2218AL JANS2N2219 JANS2N2219A JANS2N2219AL JANS2N2221A JANS2N2221AL JANS2N2484 JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373 PDF

    A1KA

    Abstract: No abstract text available
    Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT957 FZT958 ISSUE 3 - JANUARY 1996 FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteristics specified up to 1 Amp


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    OT223 FZT957 FZT958 FZT957 FZT857 FZT958 100ms A1KA PDF

    E80276

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM50E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50E2Y/E3Y-H • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 600V hFE DC current gain. 75


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    QM50E2Y/E3Y-H E80276 E80271 E80276 PDF

    nte175

    Abstract: NTE38
    Text: NTE38 PNP & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high– speed switching and linear amplifier applications for high–voltage operational amplifiers, switching


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    NTE38 NTE175 NTE38: 200mA NTE175: NTE38 875mA nte175 PDF

    pnp 500v

    Abstract: vbe 10v, vce 500v NPN Transistor NTE175 NTE38
    Text: NTE38 PNP & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch TO66 Type Package Description: The NTE38 (PNP) and NTE175 (NPN) are complementary silicon transistors in a TO66 type package designed for high−speed switching and linear amplifier applications for high−voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.


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    NTE38 NTE175 NTE38: 200mA NTE175: NTE38 875mA pnp 500v vbe 10v, vce 500v NPN Transistor NTE175 PDF

    Untitled

    Abstract: No abstract text available
    Text: nP48 SEM ICONDUCTOR FORWARD INTEKNADQNAL ELECTRONICS LTD, TECHNICAL DATA NPN HIGH VOLTAGE AND SWITCHING APPLICATIONS HIGH SUSTAINING VOLTAGE Vce(sus : 300V) 1A RATED COLLECTOR CURRENT EPITAXIAL SILICON TRANSISTOR Package: TO-220 ABSOLUTE MAXIMUM RATINGS at Tamb=25'c


    OCR Scan
    O-220 300mA 200mA PDF

    SILICON TRANSISTOR CORP

    Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060
    Text: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP T*VS*07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V


    OCR Scan
    8E54022 FE20-120 30MHz fTTo40M 50MHz 2N4863 2N5662 N5663 2N5333 SILICON TRANSISTOR CORP STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 -JA N U A R Y 1996 FEATURES * * 1 Am p continuous current Up to 2 Am ps peak current * * Very lo w saturation voltage Excellent gain characteristics specified up to 1 Am p COMPLEMENTARY TYPES -


    OCR Scan
    OT223 FZT957 FZT857 FZT958 FZT957 FZT958 -500mA, -100mA, 50MHz PDF

    LB-008

    Abstract: lc08a LB 125 transistor Triple Diffused
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION • • • • • Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time


    OCR Scan
    KSC5338D/KSC5338DW O-220 LB-008 lc08a LB 125 transistor Triple Diffused PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 - JANUARY 1996 FEATURES * * 1 A m p continuous current Up to 2 A m p s peak current * * Very low saturation voltage Excellent gain characteristics specified up to 1 A m p C O M PLEM EN TAR Y TYPES -


    OCR Scan
    OT223 FZT957 FZT857 FZT958 -300V -300V, -10mA, -100mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION * * * * * TO-220 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time


    OCR Scan
    KSC5338D/KSC5338DW O-220 T0-220 C35sià PDF