Untitled
Abstract: No abstract text available
Text: SDB1040 Semiconductor Schottky Barrier Diode Applications • Portable equipment battery applications • SMPS applications Features • • • • Low power rectified High reliability Low forward voltage: VF=0.5V Typ. @ IF=1A Low reverse current: IR=4 ㎂ Typ. @ VR=40V
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SDB1040
OD-123
KSD-D6B001-000
150onents
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SB10W05Z
Abstract: No abstract text available
Text: Ordering number : EN3876A Schottky Barrier Diode Twin Type • Cathode Common SB10W05Z 50V, 1A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • Low forward voltage (VF max=0.55V). • Fast reverse recovery time (trr max=10ns).
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EN3876A
SB10W05Z
SB10W05Z
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STTH102
Abstract: STTH102RL
Text: STTH102 HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 200 V Tj (max) 175 °C VF (max) 0.78 V trr (max) 20 ns FEATURES AND BENEFITS • ■ ■ ■ Very low conduction losses Negligible switching losses Low forward and reverse recovery times
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STTH102
DO-41
STTH102,
STTH102
STTH102RL
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t0606
Abstract: No abstract text available
Text: O rdering num ber : EN1920A SB 10-05 NO.1920A Schottky Barrier Diode 50V, 1A Rectifier A p p lic a tio n s • High frequency rectification switching regulators, converters, choppers F e a tu r e s • Low forward voltage (Vp = 0.55V max) • Fast reverse recovery time (trr = 10ns max)
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EN1920A
t0606
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STPR2420CT
Abstract: No abstract text available
Text: STPR2420CT ULTRA-FAST RECOVERY RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS A1 IF AV 2 x 12 A VRRM 200 V Tj (max) 150°C VF (max) 0.99 V trr (max) 30 ns K A2 FEATURES SUITED FOR SMPS LOW LOSSES LOW FORWARD AND REVERSE RECOVERY TIME HIGH SURGE CURRENT CAPABILITY
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STPR2420CT
O-220AB
O-220AB,
STPR2420CT
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Untitled
Abstract: No abstract text available
Text: y — IN T E G R A T E D C IR C U IT S UC1610 UC3610 UNITRODE DUAL Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection makes this
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UC1610
UC3610
UC3610
ambient40V
UC1611
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RD10
Abstract: WTV3585
Text: WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead Pb -Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change
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WTV3585
03-Apr-07
RD10
WTV3585
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Untitled
Abstract: No abstract text available
Text: 1N5817~1N5819 1.0A Schottky rectifier Features 1. Low power loss, high efficiency 2. High current capability 3. Low forward voltage 4. Plastic material – UL recognition flammability classification 94V – 0 Applications For use in low voltage, high frequency inverters, free wheeling,
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1N5817
1N5819
1N5817
1N5818
1-Jun-2004
DO-41
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Untitled
Abstract: No abstract text available
Text: UC1610 UC2610 UC3610 Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array • Exceptional Efficiency This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection
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UC1610
UC2610
UC3610
UC3610DW
UC3610DWTR
UC3610N
UC3610Q
UC3610QTR
SSYA008
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DIODE T25 4 do
Abstract: DIODE T25 4 SMD 547 DIODE smd diode 547 TVS006B05 TVS006B12 TVS006B15 TVS006B24 DIODE T25 DIODE SMD T25
Text: TVS DIODE ARRAY SPEER ELECTRONICS, INC. 05-00 300 WATT SMD TVS ARRAY FEATURES APPLICATIONS -I/O Transient Protection -JEDEC SO-08 Package / UL 94V-0 -Protects five I/O Lines -Low Leakage Current -Low Operating & Clamping Voltages -Solid-State Technology - Working Voltages: 5V, 12V, 15V, and 24V
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SO-08
HBMperIEC1000-4-2)
DIODE T25 4 do
DIODE T25 4
SMD 547 DIODE
smd diode 547
TVS006B05
TVS006B12
TVS006B15
TVS006B24
DIODE T25
DIODE SMD T25
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SMD 547 DIODE
Abstract: DIODE SMD T25 smd diode 547 TVS001B05 TVS001B12 TVS001B15 TVS001B24
Text: TVS DIODE ARRAY SPEER ELECTRONICS, INC. 05-00 300 WATT SMD TVS ARRAY FEATURES APPLICATIONS -I/O Transient Protection -JEDEC SO-14 Package / UL 94V-0 -Protects Eight I/O Lines -Low Leakage Current -Low Operating & Clamping Voltages -Solid-State Technology - Working Voltages: 5V, 12V, 15V, and 24V
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SO-14
HBMperIEC1000-4-2)
Tempe33)
SMD 547 DIODE
DIODE SMD T25
smd diode 547
TVS001B05
TVS001B12
TVS001B15
TVS001B24
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Untitled
Abstract: No abstract text available
Text: UC1610 UC2610 UC3610 UNITRODE Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection
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UC1610
UC2610
UC3610
capC1610
UC3610
100mA
030S4
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smd 1C
Abstract: S2659 25040A smd diode 1c
Text: IC IC SMD Type 40V N-Channel PowerTrench MOSFET KDS4470 Features 12.5 A, 40 V. RDS ON = 9m @ VGS = 10 V Low gate charge (45 nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25
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KDS4470
smd 1C
S2659
25040A
smd diode 1c
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Untitled
Abstract: No abstract text available
Text: IC IC MOSFET SMD Type Product specification KDS4470 Features 12.5 A, 40 V. RDS ON = 9m @ VGS = 10 V Low gate charge (45 nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25
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KDS4470
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R8120P2
Abstract: Fast Recovery Diodes Cross Reference ISL9R8120P2
Text: ISL9R8120P2 / ISL9R8120S3S 8A, 1200V Stealth Diode General Description Features The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft
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ISL9R8120P2
ISL9R8120S3S
ISL9R8120S3S
O-220
R8120P2
R8120P2
Fast Recovery Diodes Cross Reference
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4501ss
Abstract: rd15 WTK4501 RD 15 4501s
Text: WTK4501 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 30 VOLTAGE DRAIN CURRENT 7 AMPERES 7,8 DRAIN P b Lead Pb -Free 2 GATE 5,6 DRAIN P-CHANNEL DRAIN SOURCE VOLTAGE -30 VOLTAGE DRAIN CURRENT -5.3 AMPERES 3 SOURCE 1 1 SOURCE Features:
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WTK4501
07-May-07
4501ss
rd15
WTK4501
RD 15
4501s
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BYV541V-200
Abstract: BYV541V BYV54V BYV54V-200
Text: BYV54V BYV541V HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES n n n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED : Insulating voltage = 2500 VRMS
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BYV54V
BYV541V
BYV541V-200
BYV54V-200
BYV541V-200
BYV541V
BYV54V
BYV54V-200
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BYV255V
Abstract: TTP250
Text: BYV255V HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES n n n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED : Insulating voltage = 2500 VRMS Capacitance = 55 pF
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BYV255V
BYV255V
TTP250
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vogt inductors IL 050 321 31 01
Abstract: vogt IL 050 321 31 01 VJ1812Y104KXCAT bc 036 47uf capacitor MUR120T3 vogt inductors 5073NW1K000J12AFX IRS2540 vogt -t3 MRC10
Text: IRPLLED1 IRPLLED1 350mA to 1.5A High Voltage LED Driver using IRS2540 Table of Contents Page 1. Introduction……………………………………………………………….….1 2. Constant Current
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350mA
IRS2540
27www
RD-0608
28www
vogt inductors IL 050 321 31 01
vogt IL 050 321 31 01
VJ1812Y104KXCAT
bc 036 47uf capacitor
MUR120T3
vogt inductors
5073NW1K000J12AFX
IRS2540
vogt -t3
MRC10
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k1560g3
Abstract: TA49410
Text: ISL9K1560G3 15A, 600V Stealth Dual Diode General Description Features The ISL9K1560G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft
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ISL9K1560G3
ISL9K1560G3
k1560g3
TA49410
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k860p3
Abstract: TA49409
Text: ISL9K860P3 8A, 600V Stealth Dual Diode General Description Features The ISL9K860P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft
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ISL9K860P3
ISL9K860P3
k860p3
TA49409
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K460P3
Abstract: K460p TA49408 200a gto preliminary
Text: ISL9K460P3 4A, 600V Stealth Dual Diode General Description Features The ISL9K460P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft
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ISL9K460P3
ISL9K460P3
K460P3
K460p
TA49408
200a gto preliminary
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Untitled
Abstract: No abstract text available
Text: SBM3045VDC UlTRA LOW VF SCHOTTKY RECTIFIER VOLTAGE 45 Volts 30 Amperes CURRENT FEATURES 0.189 4.8 0.137(4.4) 0.409(10.4) 0.387(9.80) • Ultra Low forward voltage drop, low power losses 0.055(1.4) 0.047(1.2) 0.357(9.1) 0.335(8.5) 0.418(10.6) 0.378(9.60) • High efficiency operation
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SBM3045VDC
2011/65/EU
MIL-STD-750,
2013-REV
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Untitled
Abstract: No abstract text available
Text: BYV54V BYV541V HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS ■ VERY LOW FORWARD LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ HIGH SURGE CURRENT CAPABILITY ■ HIGH AVALANCHE ENERGY CAPABILITY ■ INSULATED: Insulating voltage = 2 5 0 0 V rms
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BYV54V
BYV541V
BYV541V-200
BYV54V-200
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