Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel
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LMBT3904LT1G
3000/Tape
LMBT3904LT3G
10000/Tape
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270vdc
Abstract: "thermal fuse" ry
Text: MI-1AM M ilitary Input A tten u ator Modules Product Highlights The MI-IAM is an accessory product to Vicor’s Ml-Series of DC-DC converters that provides the EMI/RFI filtering and transient protection required in military applications. Designed for use
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270Vdc
MIL-STD-461
MIL-STD-810
MIL-STD-704A
MIL-STD1275A
MI-200
-4855-1A
125-C
"thermal fuse" ry
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TRANSISTOR SMD MARKING CODE 1AM
Abstract: smd transistor 1AM smd 1AM SMD TRANSISTOR MARKING 1am 1am smd 1am smd transistor SMD MARKING CODE 1am SMD 1am Transistor marking code SS SOT23 transistor transistor 1am
Text: General Purpose Transistor SMD Diodes Specialist MMBT3904-G NPN RoHS Device Features -Epitaxial planar die construction SOT-23 -As complementary type, the PNP 0.118(3.00) 0.110(2.80) transistor MMBT3904-G is recommended 3 0.055(1.40) 0.047(1.20) 1 2 0.006(0.15)
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MMBT3904-G
OT-23
MMBT3904-G
QW-BTR01
TRANSISTOR SMD MARKING CODE 1AM
smd transistor 1AM
smd 1AM
SMD TRANSISTOR MARKING 1am
1am smd
1am smd transistor
SMD MARKING CODE 1am
SMD 1am Transistor
marking code SS SOT23 transistor
transistor 1am
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TRANSISTOR SMD MARKING CODE 1AM
Abstract: smd transistor 1AM smd 1AM SMD MARKING CODE 1am MMBT3904-HF SMD TRANSISTOR MARKING 1am 1am smd marking code SS SOT23 MARKING SMD PNP TRANSISTOR 1am 1am smd transistor
Text: General Purpose Transistor SMD Diodes Specialist MMBT3904-HF NPN RoHS Device Features -Halogen Free -Epitaxial planar die construction SOT-23 0.118(3.00) 0.110(2.80) -As complementary type, the PNP 3 transistor MMBT3904-HF is recommended 0.055(1.40) 0.047(1.20)
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MMBT3904-HF
OT-23
MMBT3904-HF
QW-HTR02
TRANSISTOR SMD MARKING CODE 1AM
smd transistor 1AM
smd 1AM
SMD MARKING CODE 1am
SMD TRANSISTOR MARKING 1am
1am smd
marking code SS SOT23
MARKING SMD PNP TRANSISTOR 1am
1am smd transistor
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A114D
Abstract: A114F SE708 DT230B DT230F STB-568 GER4007 a114n DZ800 MA1703
Text: SILICON S IG N A L DIODES 100 M A T Y P E S Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec)
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MA1703
MA1704
SS321
SS322
SS324
SS325
SS334
SS337
SE708
DZ800
A114D
A114F
DT230B
DT230F
STB-568
GER4007
a114n
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PDF
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Untitled
Abstract: No abstract text available
Text: DIODES INC PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: 6/24/02 6/24/02 Discrete Semiconductor DCS/PCN-1011 Alert Type: PCN #: Specification Change, Marking Change, Assembly Site & Test Site PCN #:2002-1011 TITLE Specification Change, Marking Change MMBT3904
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DCS/PCN-1011
MMBT3904
com/datasheets/ds30036
QP502-1
QP502-1
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marking DIODE 2U 04
Abstract: marking 2U diode marking 2U 20 diode marking 2U 40 diode d490 D491 marking 2U 28 diode 2u schottky Barrier Diodes WSD490 WSD491
Text: W SD 490/W SD 491 Surface M o un t Schottkv B a rrie r Diode SCHOTTKV BARRIER R E C TIFIER S 1.0AM PERES 20-40VOLTS F eatu res: *L ow Turn-on Voltage *Fast S w itch in g *PN Ju n ction G uard Ring fo r T ransient and ESD P rotection M echanical D ata: *Case : SOT-346, M olded P lastic
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D490/WSD491
OT-346.
MIL-STD-202
20-40VOLTS
SC-59
SC-59
WSD490AVSD491
D490AVS
marking DIODE 2U 04
marking 2U diode
marking 2U 20 diode
marking 2U 40 diode
d490
D491
marking 2U 28 diode
2u schottky Barrier Diodes
WSD490
WSD491
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PDF
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Untitled
Abstract: No abstract text available
Text: HN1D03FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE h n i n n 3 F 11 m m m 'm m m mr v • ULTRA HIGH SPEED SWITCHING APPLICATION. U n it in mm • B u ilt in Anode Common and Cathode Common. TT. *j H unit x 2 .i± a i 1.25±0.1 • Low Forw ard Voltage
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HN1D03FU
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Untitled
Abstract: No abstract text available
Text: DU C o n te n ts S e rie s Page Surface Mount Devices •s g g s a Thick Film Chip Resistors RC 2 h U v 7JU5F 7 yiftifLtff Trimmable Chip Resistors RC Tr 6 51 7 T'tSfiiT' 7 h *7 — ? Chip Resistor Networks RAC 8 Chip Trimmer Potentiometers * 7 8 £ 3 i7 >
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PDF
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V06C HITACHI
Abstract: DHM3K20 DHM3HC80 hitachi rectifier U05B DHM3G80 DFM1SA DHM3FG80 DAM3A HITACHI DFG2A hitachi V03C
Text: Diodes Axial • it m. Lead Type v-vwmm* mm#*- m¿2&&r¿3>cy7 vyz^mm^ l«-?íf5o t t x - yy yya iFeatures ►Hitachi diodes are available for any kind of applications. The versatile lineup includes general use rectifier diodes, surge-absorbing devices, high-voltage
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AW01-06
AW01/AU01-07
V06C HITACHI
DHM3K20
DHM3HC80
hitachi rectifier U05B
DHM3G80
DFM1SA
DHM3FG80
DAM3A HITACHI
DFG2A
hitachi V03C
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BT3904
Abstract: 2N3903 MOTOROLA SOT-23 BT3904LT1
Text: M A X IM U M RATINGS Rating Symbol Value Collector-Emitter Voltage v CEO 40 Vdc Collector-Base Voltage v CBO 60 Vdc Emitter-Base Voltage v EBO 6.0 Vdc 'c 200 mAdc Symbol Max Unit Pd 225 mW 1.8 mW/°C r »j a 656 ° c /w pd 300 mW 2.4 m w rc r 0JA 417 ° c /w
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MMBT3904LT1*
OT-23
O-236AB)
BT3904LT1
BT3904
2N3903 MOTOROLA SOT-23
BT3904LT1
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Untitled
Abstract: No abstract text available
Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction
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SMB10
J-STD-020,
AEC-Q101
DO-214AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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SMBJ vishay
Abstract: No abstract text available
Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction
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SMB10
J-STD-020,
AEC-Q101
DO-214AA
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SMBJ vishay
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Untitled
Abstract: No abstract text available
Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Supressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction
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Original
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SMB10
J-STD-020,
DO-214AA
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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marking code 1bx
Abstract: No abstract text available
Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Supressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction
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Original
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SMB10
DO-214AA
J-STD-020,
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
marking code 1bx
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PDF
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Untitled
Abstract: No abstract text available
Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction
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Original
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SMB10
DO-214AA
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction
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Original
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SMB10
J-STD-020,
AEC-Q101
DO-214AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: SCRs ID200-ID203 ID300-ID301 1.6 Amp, Planar FEATU RES DESCRIPTION • • • • This Data Sheet describes Microsemi's line of hermetically sealed industrial SCRs designed for high-voltage, medium-current control applications. The Series is packaged in a TO-39 metal case with Microsemi's unique oxide passivated junctions to ensure
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OCR Scan
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ID200-ID203
ID300-ID301
ID201
ID200
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PDF
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Untitled
Abstract: No abstract text available
Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction
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Original
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SMB10
DO-214AA
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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ba38 diode
Abstract: rca tube OC 3 RADIOTRON ST-12 rca company Scans-0017340 if7g RCA tube
Text: DUPLEX-DIODE PENTODE Coated 2 .0 0 .0 6 F i lament V o lta g e C u rre n t d -c v o lt s amp. D ir e c t I n t e r e le c t r o d e C a p a c ita n c e s - Pentode U n it : 0 .0 0 7 max. put G r id to P la t e w ith sh ie ld -can 4 p jjf Input 9 ¿ i/jf
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OCR Scan
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ST-12
92C-4888
92C-6I24
ba38 diode
rca tube OC 3
RADIOTRON
rca company
Scans-0017340
if7g
RCA tube
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PDF
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Untitled
Abstract: No abstract text available
Text: l i 5E D POUEREX INC • 72^41,31 0DÜ3bhB 7 " F -â ? -ü mNEREX ED_ Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Dual SCft, SCR/Diode Isolated Modules
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OCR Scan
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1S697
BP107,
Amperes/100-2000
ED430825
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PDF
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CR02A
Abstract: No abstract text available
Text: POltiEREX INC H M B 1SE D R S • TSTMbSl QGG34T5 1 T Powerex, Inc., Hlllis Street, Yaungwood, Pennsylvania t5697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 72.75.15 CDL2_ 60 CDL7_ 60 Tentative SCR/Diode Light-Triggered
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OCR Scan
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QGG34T5
t5697
BP107
Amperes/100-1400
AX/10
MAX/10
CR02A
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PDF
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP b3E D • 7 [n 7 G ? b D012D11 51T «TS A J a m ^ z l— - y S uita ble i Type No. °ackaqe RP • : MIX-OSC M o s t S uitable ,F Arr'° o "c o n v • • Detector Narrow tana stop&gr» • Local Buffer Voltage Range CV LA1130
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OCR Scan
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D012D11
LA1130
SIP-16
LA1135
LA1135M
DIP-20S
MFP-20
LA1136N
LA1136NM
DIP24S
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PDF
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1am surface mount diode
Abstract: c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f
Text: ON Semiconductor Bipolar Transistors Bipolar Transistors Continued Plastic-Encapsulated Transistors (Continued) Plastic-Encapsulated Multiple Transistors Plastic-Encapsulated High-Voltage Amplifier Transistors (Case 29-04 Ñ TO-226AA (TO-92) Ñ PNP) hFE @ IC
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Original
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O-226AA
O-236AB
OT-23)
OT-223)
MMBTA42LT1
MMBT5551LT1
BSP52T1
1am surface mount diode
c845
2GM sot-23 transistor
G1 TRANSISTOR SOT 23 PNP
2F PNP SOT23
P1F marking
AS3 SOT223
p2f sot-223
c845 TO 92
SOT-223 P1f
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PDF
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