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    1AM SOT TRANSISTOR Search Results

    1AM SOT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    1AM SOT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1AM MMBT3904

    Abstract: transistors 1am transistor 1am
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction SOT-23 (3)C MARKING: 1AM 1AM Ｃｏｄｅ


    Original     		PDF OT-23 MMBT3904 MMBT3906 OT-23 1AM MMBT3904 transistors 1am transistor 1am

    1AM marking transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE


    Original     		PDF OT-23 MMBT3904 OT-23 MMBT3906 100mA 100MHz 1AM marking transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT3904 Plastic-Encapsulate Transistors TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE


    Original     		PDF OT-23 MMBT3904 MMBT3906 100mA 100MHz 10mAdc

    sot23 marking 1AM

    Abstract: MARKING 1AM 1AM marking transistor transistor 1am MMBT3904 SOT-23 1AM SOT23 1AM transistor transistor marking 1am 1AM sot-23 sot23 1am
    Text: MMBT3904 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — As complementary type the PNP transistor MMBT3906 is recommended — Epitaxial planar die construction MARKING: 1AM MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF MMBT3904 OT-23 OT-23 MMBT3906 100mA 100MHz 10mAdc sot23 marking 1AM MARKING 1AM 1AM marking transistor transistor 1am MMBT3904 SOT-23 1AM SOT23 1AM transistor transistor marking 1am 1AM sot-23 sot23 1am

    transistor marking 1am

    Abstract: transistor 1am MMBT3904 MMBT3906 MMBT3904 jiangsu 1AM F
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 SOT–23 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction MARKING: 1AM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 MMBT3904 MMBT3906 -55ENT transistor marking 1am transistor 1am MMBT3904 MMBT3904 jiangsu 1AM F

    marking 1am

    Abstract: transistor 1am transistor marking 1am 1AM transistor 1AM marking transistor 1AM Y MMBT3904 MMBT3906 1AM 6 1aM sot-23 transistor
    Text: MMBT3904 Pb 0.2 Watts NPN Plastic-Encapsulate Transistors RoHS COMPLIANCE SOT-23 Features — As complementary type, the PNP transistor MMBT3906 is recommended — Epitaxial planar die construction — Marking: 1AM Dimensions in inches and millimeters Maximum Ratings


    Original     		PDF MMBT3904 OT-23 MMBT3906 100mA 100MHz MMBT3904) marking 1am transistor 1am transistor marking 1am 1AM transistor 1AM marking transistor 1AM Y MMBT3904 1AM 6 1aM sot-23 transistor

    transistor 1am

    Abstract: 1AM transistor 1AM c 1aM sot-23 transistor 1AM sot 23 1AM MMBT3904 1AM+SOT-23
    Text: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 G D ­Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF MMBT3904 300mW, OT-23 MIL-STD-202, transistor 1am 1AM transistor 1AM c 1aM sot-23 transistor 1AM sot 23 1AM MMBT3904 1AM+SOT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel


    Original     		PDF LMBT3904LT1G 3000/Tape LMBT3904LT3G 10000/Tape

    marking code 1AM

    Abstract: 1am transistor MMBT3904LT3G equivalent of 1AM transistor marking 1am
    Text: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage


    Original     		PDF MMBT3904LT1 marking code 1AM 1am transistor MMBT3904LT3G equivalent of 1AM transistor marking 1am

    1AM c

    Abstract: 1AM marking transistor
    Text: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF MMBT3904 300mW, OT-23 MIL-STD-202, 1AM c 1AM marking transistor

    transistor 1am

    Abstract: 1AM marking transistor 1AM transistor transistor marking 1am 1AM marking transistor marking code 1am sot23 marking 1AM sot-23 Marking 1am 1AM F marking code 1am
    Text: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF MMBT3904 300mW, OT-23 MIL-STD-202, transistor 1am 1AM marking transistor 1AM transistor transistor marking 1am 1AM marking transistor marking code 1am sot23 marking 1AM sot-23 Marking 1am 1AM F marking code 1am

    MMBT3904LT3G

    Abstract: 1N916 MMBT3904LT1 MMBT3904LT1G MMBT3904LT3 1AM 6 marking code 1AM
    Text: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage


    Original     		PDF MMBT3904LT1 MMBT3904LT1/D MMBT3904LT3G 1N916 MMBT3904LT1 MMBT3904LT1G MMBT3904LT3 1AM 6 marking code 1AM

    LMBT3908LT1G

    Abstract: 1AM 6 1AM c
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a • Pb−Free Lead Finish S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.


    Original     		PDF AEC-Q101 LMBT3908LT1G S-LMBT3908LT1G LMBT3908LT3G S-LMBT3908LT3G 3000/Tape 10000/Tape LMBT3908LT1G 1AM 6 1AM c

    MMBT3904LT3G

    Abstract: MMBT3904LT1 1AM 1N916 MMBT3904LT1 MMBT3904LT1G MMBT3904LT3
    Text: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage


    Original     		PDF MMBT3904LT1 MMBT3904LT1/D MMBT3904LT3G MMBT3904LT1 1AM 1N916 MMBT3904LT1 MMBT3904LT1G MMBT3904LT3

    MMBT3904LT1G

    Abstract: MMBT3904LT3G MMBT3904LT1 MARKING 1AM 1N916 sot-23 Marking 1am
    Text: MMBT3904LT1G General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO 40 Vdc Collector −Base Voltage


    Original     		PDF MMBT3904LT1G MMBT3904LT1/D MMBT3904LT1G MMBT3904LT3G MMBT3904LT1 MARKING 1AM 1N916 sot-23 Marking 1am

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904L, SMMBT3904L General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • http://onsemi.com Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique


    Original     		PDF MMBT3904L, SMMBT3904L MMBT3904LT1/D

    mmbt3904l

    Abstract: MMBT3904LT3G SMMBT3904LT1G transistor marking code 1am
    Text: MMBT3904L, SMMBT3904L General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • http://onsemi.com Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique


    Original     		PDF MMBT3904L, SMMBT3904L AEC-Q101 OT-23 O-236) MMBT3904LT1/D mmbt3904l MMBT3904LT3G SMMBT3904LT1G transistor marking code 1am

    MMBT3904LT3G

    Abstract: sot-23 Marking 1am
    Text: MMBT3904L, SMMBT3904L General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • http://onsemi.com Compliant S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and


    Original     		PDF MMBT3904L, SMMBT3904L AEC-Q101 OT-23 O-236) MMBT3904LT1/D MMBT3904LT3G sot-23 Marking 1am

    Untitled

    Abstract: No abstract text available
    Text: PZT3904T1G, SPZT3904T1G General Purpose Transistor NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−223 CASE 318E


    Original     		PDF PZT3904T1G, SPZT3904T1G PZT3904T1/D

    MMBT3904LT1G

    Abstract: MMBT3904LT3G MMBT3904LT1G equivalent 1N916 sot-23 Marking 1am
    Text: MMBT3904LT1G General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage


    Original     		PDF MMBT3904LT1G MMBT3904LT1/D MMBT3904LT1G MMBT3904LT3G MMBT3904LT1G equivalent 1N916 sot-23 Marking 1am

    MMBT3904LT1G

    Abstract: MMBT3904LT3G 1N916 MMBT3904LT
    Text: MMBT3904LT1G General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage


    Original     		PDF MMBT3904LT1G MMBT3904LT1/D MMBT3904LT1G MMBT3904LT3G 1N916 MMBT3904LT

    SPZT3904T1G

    Abstract: transistor marking 1am
    Text: PZT3904T1G, SPZT3904T1G General Purpose Transistor NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−223 CASE 318E


    Original     		PDF PZT3904T1G, SPZT3904T1G AEC-Q101 OT-223 PZT3904T1/D transistor marking 1am

    Untitled

    Abstract: No abstract text available
    Text: PZT3904T1G General Purpose Transistor NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF PZT3904T1G AEC-Q101 PZT3904T1/D

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT3904LT1 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR W（Tamb=25℃） ２．４ １．３ Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃


    Original     		PDF OT-23 MMBT3904LT1 MMBT3904LT1 100MHz 037TPY 950TPY 550REF 022REF