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    1AM TRANSISTOR Search Results

    1AM TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1AM TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1AM MMBT3904

    Abstract: transistors 1am transistor 1am
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction SOT-23 (3)C MARKING: 1AM 1AM Ｃｏｄｅ


    Original     		PDF OT-23 MMBT3904 MMBT3906 OT-23 1AM MMBT3904 transistors 1am transistor 1am

    LMBT3904LT1G

    Abstract: equivalent of 1AM 1am equivalent 1N916 1AM marking transistor sot-23 Marking 1am 1aM sot-23 transistor
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel


    Original     		PDF LMBT3904LT1G 3000/Tape LMBT3904LT3G 10000/Tape OT-23 LMBT3904LT1G equivalent of 1AM 1am equivalent 1N916 1AM marking transistor sot-23 Marking 1am 1aM sot-23 transistor

    1AM marking transistor

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel


    Original     		PDF LMBT3904LT1G 3000/Tape LMBT3904LT3G 10000/Tape OT-23 1AM marking transistor

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel


    Original     		PDF LMBT3904LT1G 3000/Tape LMBT3904LT3G 10000/Tape

    marking 1am

    Abstract: transistor 1am transistor marking 1am 1AM transistor 1AM marking transistor 1AM Y MMBT3904 MMBT3906 1AM 6 1aM sot-23 transistor
    Text: MMBT3904 Pb 0.2 Watts NPN Plastic-Encapsulate Transistors RoHS COMPLIANCE SOT-23 Features — As complementary type, the PNP transistor MMBT3906 is recommended — Epitaxial planar die construction — Marking: 1AM Dimensions in inches and millimeters Maximum Ratings


    Original     		PDF MMBT3904 OT-23 MMBT3906 100mA 100MHz MMBT3904) marking 1am transistor 1am transistor marking 1am 1AM transistor 1AM marking transistor 1AM Y MMBT3904 1AM 6 1aM sot-23 transistor

    1AM marking transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE


    Original     		PDF OT-23 MMBT3904 OT-23 MMBT3906 100mA 100MHz 1AM marking transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT3904 Plastic-Encapsulate Transistors TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE


    Original     		PDF OT-23 MMBT3904 MMBT3906 100mA 100MHz 10mAdc

    sot23 marking 1AM

    Abstract: MARKING 1AM 1AM marking transistor transistor 1am MMBT3904 SOT-23 1AM SOT23 1AM transistor transistor marking 1am 1AM sot-23 sot23 1am
    Text: MMBT3904 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — As complementary type the PNP transistor MMBT3906 is recommended — Epitaxial planar die construction MARKING: 1AM MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF MMBT3904 OT-23 OT-23 MMBT3906 100mA 100MHz 10mAdc sot23 marking 1AM MARKING 1AM 1AM marking transistor transistor 1am MMBT3904 SOT-23 1AM SOT23 1AM transistor transistor marking 1am 1AM sot-23 sot23 1am

    transistor marking 1am

    Abstract: transistor 1am MMBT3904 MMBT3906 MMBT3904 jiangsu 1AM F
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 SOT–23 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction MARKING: 1AM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 MMBT3904 MMBT3906 -55ENT transistor marking 1am transistor 1am MMBT3904 MMBT3904 jiangsu 1AM F

    LMBT3908LT1G

    Abstract: 1AM 6 1AM c
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a • Pb−Free Lead Finish S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.


    Original     		PDF AEC-Q101 LMBT3908LT1G S-LMBT3908LT1G LMBT3908LT3G S-LMBT3908LT3G 3000/Tape 10000/Tape LMBT3908LT1G 1AM 6 1AM c

    transistor 1am

    Abstract: 1AM transistor 1AM c 1aM sot-23 transistor 1AM sot 23 1AM MMBT3904 1AM+SOT-23
    Text: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 G D ­Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF MMBT3904 300mW, OT-23 MIL-STD-202, transistor 1am 1AM transistor 1AM c 1aM sot-23 transistor 1AM sot 23 1AM MMBT3904 1AM+SOT-23

    1AM c

    Abstract: 1AM marking transistor
    Text: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF MMBT3904 300mW, OT-23 MIL-STD-202, 1AM c 1AM marking transistor

    transistor 1am

    Abstract: 1AM marking transistor 1AM transistor transistor marking 1am 1AM marking transistor marking code 1am sot23 marking 1AM sot-23 Marking 1am 1AM F marking code 1am
    Text: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF MMBT3904 300mW, OT-23 MIL-STD-202, transistor 1am 1AM marking transistor 1AM transistor transistor marking 1am 1AM marking transistor marking code 1am sot23 marking 1AM sot-23 Marking 1am 1AM F marking code 1am

    1am marking sot-23

    Abstract: 1AM marking transistor
    Text: General Purpose Transistor MMBT3904-G NPN RoHS Device Features SOT-23 -Epitaxial planar die construction 0.120 (3.04) 0.110 (2.80) -As complementary type, the PNP 3 transistor MMBT3904-G is recommended 0.055 (1.40) 0.047 (1.20) 1 0.080 (2.04) 0.070 (1.78)


    Original     		PDF MMBT3904-G OT-23 MMBT3904-G QW-BTR01 1am marking sot-23 1AM marking transistor

    MMBT3904-HF

    Abstract: transistor 1am marking code SS SOT23 transistor 1AM marking transistor transistor marking 1am 1aM sot-23 transistor 1AM sot 23 transistor marking code 1am SS TRANSISTOR IN SOT 23 PACKAGING
    Text: General Purpose Transistor MMBT3904-HF NPN RoHS Device Halogen Free SOT-23 Features 0.118(3.00) -Epitaxial planar die construction 0.110(2.80) 3 -As complementary type, the PNP 0.055(1.40) transistor MMBT3904-HF is recommended 0.047(1.20) 1 2 0.006(0.15)


    Original     		PDF MMBT3904-HF OT-23 MMBT3904-HF QW-JTR02 OT-23 transistor 1am marking code SS SOT23 transistor 1AM marking transistor transistor marking 1am 1aM sot-23 transistor 1AM sot 23 transistor marking code 1am SS TRANSISTOR IN SOT 23 PACKAGING

    Untitled

    Abstract: No abstract text available
    Text: General Purpose Transistor MMBT3904-HF NPN RoHS Device Halogen Free SOT-23 Features 0.118(3.00) -Epitaxial planar die construction 0.110(2.80) 3 -As complementary type, the PNP 0.055(1.40) transistor MMBT3904-HF is recommended 0.047(1.20) 1 2 0.006(0.15)


    Original     		PDF MMBT3904-HF OT-23 MMBT3904-HF QW-JTR02

    TRANSISTOR SMD MARKING CODE 1AM

    Abstract: smd transistor 1AM smd 1AM SMD MARKING CODE 1am MMBT3904-HF SMD TRANSISTOR MARKING 1am 1am smd marking code SS SOT23 MARKING SMD PNP TRANSISTOR 1am 1am smd transistor
    Text: General Purpose Transistor SMD Diodes Specialist MMBT3904-HF NPN RoHS Device Features -Halogen Free -Epitaxial planar die construction SOT-23 0.118(3.00) 0.110(2.80) -As complementary type, the PNP 3 transistor MMBT3904-HF is recommended 0.055(1.40) 0.047(1.20)


    Original     		PDF MMBT3904-HF OT-23 MMBT3904-HF QW-HTR02 TRANSISTOR SMD MARKING CODE 1AM smd transistor 1AM smd 1AM SMD MARKING CODE 1am SMD TRANSISTOR MARKING 1am 1am smd marking code SS SOT23 MARKING SMD PNP TRANSISTOR 1am 1am smd transistor

    1AM transistor

    Abstract: No abstract text available
    Text: General Purpose Transistor MMBT3904-G NPN RoHS Device Features SOT-23 -Epitaxial planar die construction 0.118(3.00) 0.110(2.80) -As complementary type, the PNP 3 transistor MMBT3904-G is recommended 0.055(1.40) 0.047(1.20) 1 2 0.079(2.00) Collector 3 0.006(0.15)


    Original     		PDF MMBT3904-G OT-23 MMBT3904-G QW-BTR01 1AM transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT3904 TRANSISTOR NPN FEATURES z As complementary type, the PNP transistor MMBT3906 is Recommended z Epitaxial planar die construction 1. BASE 2. EMITTER 3. COLLECTOR


    Original     		PDF OT-23 OT-23 MMBT3904 MMBT3906 100mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1TRANSISTOR NPN FEATURES Power dissipation PCM: 0.2 Collector current ICM: 0.2 W(Tamb=25℃) A Collector-base voltage V(BR)CBO: V 60 Operating and storage junction temperature range


    Original     		PDF OT-23 MMBT3904LT1TRANSISTOR 100MHz MMBT3904LT1 10mAdc,

    marking code 1AM

    Abstract: 1am transistor MMBT3904LT3G equivalent of 1AM transistor marking 1am
    Text: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage


    Original     		PDF MMBT3904LT1 marking code 1AM 1am transistor MMBT3904LT3G equivalent of 1AM transistor marking 1am

    1AM marking transistor

    Abstract: transistor 1am transistor marking 1am MARKING 1AM sot23 marking 1AM MMBT3904LT1 1AM 1AM marking MMBT3904LT1 1AM transistor sot-23 Marking 1am
    Text: @vic MMBT3904LT1 SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.2 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF MMBT3904LT1 OT-23 OT-23 10mAdc, 10mAdc 100MHz MMBT3904LT1 1AM marking transistor transistor 1am transistor marking 1am MARKING 1AM sot23 marking 1AM MMBT3904LT1 1AM 1AM marking 1AM transistor sot-23 Marking 1am

    BF 194 transistor

    Abstract: BF 194 npn transistor BF 194 TRANSISTORS transistor bf 194 C22B BSY82 BFY50 BFY51 BFY52 BSY81
    Text: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors lc = 1 A inTO -39 ( - T O - 5 ) metal case Type Maximum ratings C haracteristics at Tamb f'Ù (ñ ) T , = 1am b 25 °C T = ÍÍ5 °C c a se (Tcase = 100 °C) T ,°C 200 200 200 200 200 200


    OCR Scan     		PDF BSY81 BSY82 BFY50 BFY51 BF 194 transistor BF 194 npn transistor BF 194 TRANSISTORS transistor bf 194 C22B BSY82 BFY50 BFY51 BFY52 BSY81

    transistor marking 1am

    Abstract: No abstract text available
    Text: TO SH IB A RN1412,RN1413 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN 1Am 17 1 3v r m g uRm N u -m 1u A•■ u m u 'm m Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. + 0.5 3.5-as ■ I 0.ÍÍ5


    OCR Scan     		PDF RN1412 RN1413 RN2412, RN2413 RN1412 transistor marking 1am