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    1AV SERIES Search Results

    1AV SERIES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650M-F-COVER Murata Manufacturing Co Ltd PQU650M Series - 3x5 Fan Cover Kit, RoHs Medical Visit Murata Manufacturing Co Ltd
    9004FM/B Rochester Electronics LLC 9004 - NAND Gate, 9004 Series Visit Rochester Electronics LLC Buy
    100183FC Rochester Electronics LLC Multiplier, 100K Series, 8-Bit, ECL, CQFP24, CERPAK-24 Visit Rochester Electronics LLC Buy
    74AC521SC REEL Rochester Electronics LLC 74AC521 - Identity Comparator, AC Series, 8-Bit, Inverted Output, CMOS Visit Rochester Electronics LLC Buy
    MM74HC4538M-G Rochester Electronics LLC 74HC4538 - Monostable Multivibrator, HC/UH Series, 2-Func, CMOS Visit Rochester Electronics LLC Buy

    1AV SERIES Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1AV Series Unknown Basic Transistor and Cross Reference Specification Scan PDF

    1AV SERIES Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1AV Series

    Abstract: 1AV11F honeywell sensor circuit diagram 1AV12F 1AV13F 1AV11F
    Text: ISSUE 3 Installation Instructions for the 1AV Series 2 Vane Sensor PK 87573 WIRING DIAGRAMS WARNING PERSONAL INJURY • DO NOT USE these products as safety or emergency stop devices, or in any other application where failure of the product could result in personal injury.


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    87573-3-EN 1AV Series 1AV11F honeywell sensor circuit diagram 1AV12F 1AV13F 1AV11F PDF

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


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    GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a PDF

    1AV Series

    Abstract: 1AV11F 1AV chart 2 ISO 7637-1 MICRO SWITCH 1AV12F 1AV12F 1AV13F load dump pulse 1AV11F honeywell
    Text: 1AV SERIES CHART 2 NOTES OVER SPECIFIED VOLTAGE AND MAXIMUM TEMPERATURE RANGE OF SPECIFIC LISTINGS MECHANICAL CHARACTERISTICS / T V A / A SWITCH IS OFF RELEASED CONDITION WHEN VANE ACTUATOR (TOOTH) IS IN GAP LEFT RIGHT DIFFERENTIAL /S\ ABSOLUTE MAXIMUM RATINGS ARE THE


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    1AV3A

    Abstract: No abstract text available
    Text: Ö U AL IT Y TECHNOLOGIES CORP S7E P 74bbfl51 0 0 0 4 1 7 b OOfl • ö T Y Optoisolator Specifications_ H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor The HI 1AV series consists o f a gallium arsenide, infrared emitting


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    74bbfl51 H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A 0730-2P. H11AV2A 1AV3A PDF

    eh11a

    Abstract: 1AV Series H11AV1A H11AV1 H11AV2 H11AV3 H11AV2A H11AV3A 0730-2P 11AV2
    Text: Optoisolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e H I 1AV series consists o f a gallium arsenide, in fra re d em itting d io d e co u p led w ith a silicon p h o to tra n sisto r in a dual in-line


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    H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A 0730-2P. H11AV2A H11AV3A eh11a 1AV Series H11AV1A H11AV1 H11AV2 H11AV3 0730-2P 11AV2 PDF

    hall effect sensor tachometer

    Abstract: MICRO SWITCH 1AV3A hall sensor magnet 4 terminals 1AV3A 1AV2A 3AV2C 1AV Series 3AV1C 4AV12A 4AV11C
    Text: AV Van operated position sensors FEATURES TYPICAL DIMENSIONS . Hall effect sensor • Single digital output. . . current sinking or sourcing » Versatile mounting o 3 pin solder/quick-connect terminals or leadwires • 6 to 24 VDC power supply • Lower operating force


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    4AV11C V11C-T1 4AV12C 4AV11A 4AV12A hall effect sensor tachometer MICRO SWITCH 1AV3A hall sensor magnet 4 terminals 1AV3A 1AV2A 3AV2C 1AV Series 3AV1C 4AV12A PDF

    MICRO SWITCH 1AV3A

    Abstract: 3AV2C 1AV Series 4av11c-T1 hall effect vane sensor 4AV11A-T1 hall sensor magnet 4 terminals 3AV1C 4AV11C 3AV1c HONEYWELL HALL EFFECT VANE SENSOR
    Text: HONEYWELL INC/ AV MICRO nE MSS1ÖBQ DQ10ÛQD T d Van operated position sensors N- t s *i3> FEATURES TYPICAL DIMENSIONS . Hall effect sensor • S/ng/e digital output. . . current sinking or sourcing » Versatile mounting o 3 pin solder/quick-connect terminals or


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    4AV11C 4AV12C 4AV11A 4AV12Â V11C-T1 MICRO SWITCH 1AV3A 3AV2C 1AV Series 4av11c-T1 hall effect vane sensor 4AV11A-T1 hall sensor magnet 4 terminals 3AV1C 3AV1c HONEYWELL HALL EFFECT VANE SENSOR PDF

    1AV Series

    Abstract: No abstract text available
    Text: FU JI 2SK2762-01L,S t ìiu M s ir t ó u t ì FAP-IIS Series > Features - N-channel MOS-FET 800V 4Q 4A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VG S = ± 30V Guarantee Repetitive Avalanche Rated


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    2SK2762-01L 1AV Series PDF

    2SK2522-01MR

    Abstract: No abstract text available
    Text: F U JI S T D g Q E 2SK2522-01MR N-channel MOS-FET FAP-II Series 200V > Features - 0 ,1 8 H 18A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 30V Guarantee Avalanche Proof > Applications


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    2SK2522-01MR 20KjQ) PDF

    2SK2652-01

    Abstract: 526A TA6A
    Text: F U JI 2SK2652-01 N-channel MOS-FET FAP-IIS Series 900V > Features - 2 ,5 ß 6A > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated TO-3P 4.5 > Applications


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    2SK2652-01 00D4b71 526A TA6A PDF

    EFL 233

    Abstract: 2SK2757-01 n4570
    Text: F U JI ölüMeulßäUG 2SK2757-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 0 ,9 Q 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated


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    2SK2757-01 O-220AB EFL 233 n4570 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¡a s H a r r i s S E M I C O N D U C T O R F m S L 1 1 U U D , } F m S L 1 1 U U R “ Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features • Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


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    1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: FU JI 2SK2690-01 N-channel MOS-FET tìU ,s iE u itìu e FAP-IIIB Series 60V > Features - 0,0lß 80A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier


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    2SK2690-01 PDF

    HTG 7000

    Abstract: 609 200A DO-200AA R23A14B R23A16A R23A18A international rectifier 07221-D
    Text: 4855452 INTERNATIONAL RECTIFIER IO R 73C 07218 Data Sneet No. PD-2.Î47 INTERNATIONAL RECTIFIER 73 D DE 1 4ÔSS4SS 0DD7E1Û 3 | R23A SERIES 1800-1200 VOLTS RANGE 635 AMP AVG HOCKEY PUK DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS PART NUMBER VRRM* VR ” M


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    14fi554S2 000721fl R23A18A R23A16A R23A14B R23A1SB Lias54SE DO-200AA HTG 7000 609 200A international rectifier 07221-D PDF

    H11AV1A harris

    Abstract: H11AV2A
    Text: HARRI S SEMI COND 37E SECTOR 43G2271 D D G2 7 1 b ô 2 I HAS optoelectronic speculations- T -H Î-S 3 Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A G a A s In f ra re d E m ittin g D io d e & N P N S ilic o n P h o to - T ra n s is to r


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    43G2271 H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A 0730-2P. 92CS-42662 92CS-429S1 H11AV1A harris H11AV2A PDF

    1AV3A

    Abstract: H11AV1A H11AV1 H11AV2A H11AV2 H11AV3 H11AV3A 1av3 0730-2P ic 5304 1a
    Text: G E SOLI» 01 STATE 3>E § 3 f l ? 5 0 ö l ODIITDb O ptoelectronic specifications . Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A G a As Infrared Emitting D iode & N P N Silicon Photo-T ransistor T he G E Solid State 1AV series consists of a gallium arsenide, infrared


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    H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A 0730-2P. H11AV2A H11AV2 1AV3A H11AV1A H11AV1 H11AV3 H11AV3A 1av3 0730-2P ic 5304 1a PDF

    pj 939 diode

    Abstract: diode PJ 41 MG pj 939 diode SS 12 pj 889 diode
    Text: H A F R R I F S S L 1 3 A D , S E M I C O N D U C T O R F 1 3 A R Description Features 9A, 100V, Tds ON = 0-180i2 • Total Dose - Meets Pre-RAD Specifications to 1 00K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/m g/cm 2 with


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    1-800-4-HARRIS pj 939 diode diode PJ 41 MG pj 939 diode SS 12 pj 889 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: MIVR 42051 mn NEGATIVE VOLTAGE REGULATORS Designed for use in general purpose applications ABSOLUTE MAXIMUM RATINGS FEATURES • • • Output current to 5 amps Output voltage to -34V Internal short circuit protection Ratings Symbol Value Unit ^OUT 5 A Power Dissipation


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    22-PIN PDF

    HALL 95A

    Abstract: diode 60S05 95a hall ZD 103 ma 60S05 60S8
    Text: 60S SER IES Micro/semi Corp. f The diode e xp e ns SCOTTSDALE, A Z F o r m o re in fo rm a tio n call: 6 0 2 941-6300 DESCRIPTION/FEATURES • ECONOMICAL 6 AMP Iq MOLDED DEVICE OFFERS CAPABILITY OF STUDMOUNTED RECTIFIERS • 400 AMPS SURGE PROVIDES HIGH


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    60S05 60WARD HALL 95A diode 60S05 95a hall ZD 103 ma 60S05 60S8 PDF

    Untitled

    Abstract: No abstract text available
    Text: H a r r is S E M I C O N D U C T O R FSF250D, FSF250R " M • Single Event W rW • ■ Package Features • 24A, 200V, rDS ON = 0.110ft Total Dose ^ Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 • M TO-254AA - Meets Pre-RAD Specifications to 100K RAD (Si)


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    FSF250D, FSF250R O-254AA 36MeV/mg/cm2 110ft 1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 70A, 100V, rDS ON = 0.022£i The Discrete Products Operation ot Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


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    FSJ160D, FSJ160R 36MeV/mg/cm2 MIL-STD-750, MIL-S-19500, 100ms; 500ms; PDF

    75307

    Abstract: kp-03 lambda LAS 14 AU 75307*p lambda* lis
    Text: HUF75307P3, HUF75307D3, HUF75307D3S HARRIS S E M I C O N D U C T O R 13A, 55V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs January 1998 MM Features • 13A, 55V • Ultra Low On-Resistance, ro s O N = 0 .0 9 0 i2 • Diode Exhibits Both High Speed and Soft Recovery


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    HUF75307P3, HUF75307D3, HUF75307D3S TB334, 1-800-4-HARRIS 75307 kp-03 lambda LAS 14 AU 75307*p lambda* lis PDF

    75333p

    Abstract: No abstract text available
    Text: HUF75333G3, HUF75333P3, HUF75333S3, HUF75333S3S HARRIS S E M I C O N D U C T O R 56A, 55V, 0.016 Ohm, N-Channel, UltraFET Power MOSFETs January 1998 MM Features • 56A, 55V • Ultra Low On-Resistance, ros ON = • Diode Exhibits Both High Speed and Soft Recovery


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    HUF75333G3, HUF75333P3, HUF75333S3, HUF75333S3S TB334, HUF75333 1-800-4-HARRIS 75333p PDF

    Untitled

    Abstract: No abstract text available
    Text: fffj h a rris FSF150D, FSF150R S E M I C O N D U C T O R " W J " W • ■ Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs March 1995 Features Package • 25A N o te1 , 100V, rDS(ON) = 0.070Q TO-254AA • Total Dose Meets Pre-Rad Specifications to 10OkRAD(Si)


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    FSF150D, FSF150R O-254AA 10OkRAD 36MeV/mg/cm2 for3E13 1-800-4-HARRIS PDF