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    1B SOT 23 Search Results

    1B SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
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    1B SOT 23 Price and Stock

    TT Electronics plc SOT-DIV23LF-03-8870-1001-BB

    Resistor Networks & Arrays 887/1Kohm 0.1% 25ppm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SOT-DIV23LF-03-8870-1001-BB 4,900
    • 1 $2.14
    • 10 $1.9
    • 100 $1.45
    • 1000 $0.896
    • 10000 $0.869
    		Buy Now

    TT Electronics plc SOT-DIV23LF-03-1001-1001-BB

    Resistor Networks & Arrays 1K/1Kohm 0.1% 25ppm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SOT-DIV23LF-03-1001-1001-BB 2,445
    • 1 $2.2
    • 10 $1.95
    • 100 $1.49
    • 1000 $0.924
    • 10000 $0.895
    		Buy Now

    TT Electronics plc SOT-DIV23LF-03-5001-5001-BA

    Resistor Networks & Arrays 5K/5Kohm 0.5% 25ppm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SOT-DIV23LF-03-5001-5001-BA
    • 1 $4.09
    • 10 $3.66
    • 100 $2.93
    • 1000 $2.48
    • 10000 $2.48
    		Get Quote

    TT Electronics plc SOT-DIV23LF-03-2001-2001-BA

    Resistor Networks & Arrays 2K/2Kohm 0.5% 25ppm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SOT-DIV23LF-03-2001-2001-BA
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.15
    • 10000 $2.15
    		Get Quote

    TT Electronics plc SOT-DIV23LF-01-5001-5001-BA

    Resistor Networks & Arrays 5K/5Kohm 0.5% 25ppm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SOT-DIV23LF-01-5001-5001-BA
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.62
    • 10000 $1.62
    		Get Quote
    Find more 1B SOT 23 price and stock on Findchips.com

    1B SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FAIRCHILD SOT-23 MARK 1a

    Abstract: BC846 SOT23 NPN sot23 mark NF 847C BC846 BC846A BC846B BC847 BC847A fAIRCHILD BC847b
    Text: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA.


    Original     		PDF BC847A BC847B BC847C OT-23 BC846A BC846B BC847A BC847B BC846A FAIRCHILD SOT-23 MARK 1a BC846 SOT23 NPN sot23 mark NF 847C BC846 BC847 fAIRCHILD BC847b

    846a

    Abstract: BC847B, BC847C fAIRCHILD BC847b BC846B
    Text: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 mA to 50 mA.


    Original     		PDF BC846A BC846B BC847A BC847B BC847C BC846B 846a BC847B, BC847C fAIRCHILD BC847b

    PN2222A

    Abstract: PN2222 MMPQ2222 MMBT2222A NMT2222 PZT2222A SOIC-16
    Text: PN2222A MMBT2222A PZT2222A C C E E C C TO-92 BE SOT-23 B B SOT-223 Mark: 1P MMPQ2222 E B E B E B SOIC-16 E NMT2222 B C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch


    Original     		PDF PN2222A MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 SOIC-16 NMT2222 PN2222A PN2222 MMPQ2222 MMBT2222A NMT2222 PZT2222A SOIC-16

    bc847b mark

    Abstract: BC847b fAIRCHILD 847C BC846 BC846A BC846B BC847 BC847A BC847B BC847C
    Text: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA.


    Original     		PDF BC847A BC847B BC847C OT-23 BC846A BC846B BC847A BC847B BC846A bc847b mark BC847b fAIRCHILD 847C BC846 BC847 BC847C

    IC 7403

    Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
    Text: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch


    Original     		PDF MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 SOIC-16 NMT2222 IC 7403 MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N–P–N transistors Marking BC846 = 1D BC846A = 1A BC846B = 1B BC847 = 1H


    Original     		PDF OT-23 BC846 BC847 BC848 BC846 BC846A BC846B BC847A BC847B

    MMBT2222

    Abstract: No abstract text available
    Text: MMBT2222 MMBT2222 NPN General Purpose Amplifier • Sourced from process 19. C E B SOT-23 Mark: 1B Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Ratings 30 Units V VCBO VEBO Collector-Base Voltage


    Original     		PDF MMBT2222 OT-23 MMBT2222

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222 MMBT2222 NPN General Purpose Amplifier • Sourced from process 19. G S D SOT-23 Mark: 1B Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Ratings 30 Units V VCBO VEBO Collector-Base Voltage


    Original     		PDF MMBT2222 OT-23

    FAIRCHILD SOT-223 MARK

    Abstract: No abstract text available
    Text: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E B E B E B SOIC-16 E NMT2222 B C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.


    Original     		PDF PN2222A MMBT2222A MMPQ2222 NMT2222 PZT2222A PN2222A MMBT2222A OT-23 OT-223 FAIRCHILD SOT-223 MARK

    Dsei 2x101-12A

    Abstract: ixys dsei 1x31-06c ixys dsei 2x31-06c IXYS DSEI 2X121-02a ixys dsei 2x30-06c DSEI IXYS 2x31-12B 2x61-06c 2x121-02a 2x31-12B 2x31-10b
    Text: FRED Contents Package style/Bauform 1b TO-252 AA 1b 1 1a 1 TO-220 AC 1 1a TO-263 AA 1a 2 TO-247 AD 2 2a TO-247 AD 2b ISOPLUS 247 TM 2a/b 2a 2a 3 SOT-227 B, miniBLOC 3 1999 IXYS All rights reserved VRRM IFAV trr V A ns 600 600 600 6 8 8 35 35 35 600 1000


    Original     		PDF O-252 0-06A 0-10A 0-12A D1-16 D1-18 D1-20 0-02A Dsei 2x101-12A ixys dsei 1x31-06c ixys dsei 2x31-06c IXYS DSEI 2X121-02a ixys dsei 2x30-06c DSEI IXYS 2x31-12B 2x61-06c 2x121-02a 2x31-12B 2x31-10b

    aahb

    Abstract: SOT23-6 AAHB adnu MAX6509 MAX6509CAUK-T MAX6509HAUK-T MAX6510 MAX6510CAUT-T MAX6510HAUT-T 1B SOT23-6
    Text: 19-1617; Rev 1b; 9/00 Resistor-Programmable SOT Temperature Switches _Features ♦ ±0.5°C Threshold Accuracy ♦ ±4.7°C max Threshold Accuracy (-40°C to +125°C) ♦ Temperature Threshold Set by a 1% External Resistor ♦ Set-Hot or Set-Cold Option


    Original     		PDF MAX6509CAUK-T OT23-5 MAX6509HAUK-T MAX6509/MAX6510 aahb SOT23-6 AAHB adnu MAX6509 MAX6509CAUK-T MAX6509HAUK-T MAX6510 MAX6510CAUT-T MAX6510HAUT-T 1B SOT23-6

    AAHB

    Abstract: SOT23-6 AAHB "aahb" "window detector" adnu MAX6509 MAX6509CAUK-T MAX6509HAUK-T MAX6510 MAX6510CAUT-T
    Text: 19-1617; Rev 1b; 9/00 Resistor-Programmable SOT Temperature Switches _Features ♦ ±0.5°C Threshold Accuracy ♦ ±4.7°C max Threshold Accuracy (-40°C to +125°C) ♦ Temperature Threshold Set by a 1% External Resistor ♦ Set-Hot or Set-Cold Option


    Original     		PDF MAX6509CAUK-T OT23-5 MAX6509HAUK-T MAX6509/MAX6510 AAHB SOT23-6 AAHB "aahb" "window detector" adnu MAX6509 MAX6509CAUK-T MAX6509HAUK-T MAX6510 MAX6510CAUT-T

    RESISTOR SMD 2020

    Abstract: ids 2560 mmic e3 wifi amplifier circuit
    Text: E-pHEMT MMIC Product Features AE362 Application 0B 1B • 30 ~ 6000MHz • GaAs E-pHEMT MMIC • Higher linearity • Low Noise Figure • High Max input power • SOT-89 SMD Type package • Higher productivity • Lower manufacturing cost • Pb Free / RoHS Standard


    Original     		PDF AE362 6000MHz OT-89 OT-89 AE362 6000MHz RESISTOR SMD 2020 ids 2560 mmic e3 wifi amplifier circuit

    212 t sot-23

    Abstract: MMBZ27VCLT1 212 k sot-23
    Text: MOTOROLA Order this document by MMBZ15VDLT1/D SEMICONDUCTOR TECHNICAL DATA MMBZ15VDLT1 MMBZ27VCLT1 15 & 27 Volt SOT-23 Dual Monolithic Common Cathode Zeners Motorola Preferred Devices SOT–23 COMMON CATHODE DUAL ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 40 WATTS


    Original     		PDF MMBZ15VDLT1/D OT-23 236AB MMBZ15VDLT1 MMBZ27VCLT1 212 t sot-23 MMBZ27VCLT1 212 k sot-23

    MMBZ27VCLT1

    Abstract: MMBZ15VDLT1 MMBZ15VDLT3 212 s sot-23
    Text: MMBZ15VDLT1 Dual Common Cathode Series 15 & 27 VOLT SOT-23 Dual Monolithic Common Cathode Zeners Preferred Device Transient Voltage Suppressors for ESD Protection http://onsemi.com These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They


    Original     		PDF MMBZ15VDLT1 OT-23 r14153 MMBZ15VDLT1/D MMBZ27VCLT1 MMBZ15VDLT3 212 s sot-23

    MMBZ15VDLT1

    Abstract: MMBZ15VDLT3 MMBZ27VCLT1
    Text: MMBZ15VDLT1 Dual Common Cathode Series 15 & 27 VOLT SOT-23 Dual Monolithic Common Cathode Zeners Preferred Device Transient Voltage Suppressors for ESD Protection http://onsemi.com These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They


    Original     		PDF MMBZ15VDLT1 OT-23 r14153 MMBZ15VDLT1/D MMBZ15VDLT3 MMBZ27VCLT1

    FR SOT23-3

    Abstract: BC847CLT1G 1B SOT23-3 BC848ALT1G BC846 BC846A BC846ALT1 BC847 1G SOT-23 BC848
    Text: BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V COLLECTOR 3


    Original     		PDF BC846ALT1 BC846, BC847 BC848 BC846 BC847, BC850 BC848, BC849 FR SOT23-3 BC847CLT1G 1B SOT23-3 BC848ALT1G BC846 BC846A 1G SOT-23

    Untitled

    Abstract: No abstract text available
    Text: H E M iQ Q N P U S T O R PN2222A C< B' MMBT2222A PZT2222A TO-92 SOT-23 B SOT-223 Mark: 1P MMPQ2222 NMT2222 Mark: .1B SOIC-16 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Pro­


    OCR Scan     		PDF PN2222A MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 NMT2222 SOIC-16 PN2222A MMBT2222A

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG S EMICONDUCTOR IN C ' BCW69 D Q 0D 75 1b 3 | PNP EPITAXIAL SILICON TRANSISTOR c r -g r i? GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic . Collector-Emitfer Voltage Emitter-Base Voltage : Collector Current I C ollector Dissipation


    OCR Scan     		PDF BCW69 OT-23

    K 3115

    Abstract: transistor k30 KSC3125 KSC388 PC G 3115 samsung tv A12W k20a samsung tv test FC
    Text: SAMSUNG SEMICONDUCTOR INC KSC3125 14E D J ? cl b m 4 a OOO^^S 1 NPN EPITAXIAL SILICON TRANSISTOR T-31-1B TV FINAL PICTURE AMPLIFIER APPLICATION SOT-23 ABSOLUTE MAXIMUM RATINGS T,=25°C Characteristic Collector-Base Voltage Cottector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF KSC3125 T-31-15 KSC388 OT-23 K 3115 transistor k30 PC G 3115 samsung tv A12W k20a samsung tv test FC

    transistor 1f sot-23

    Abstract: sot23 AJ motorola sot 23 marking transistor marking code SOT-23 BC817B marking 1F transistor sot-23 transistor marking code SOT-23 2F marking 1P sot-23 sot 23 transistor 2f sot transistor pinout
    Text: oatrif ©® SOT 23 Microminiature Space Saving Alternatives for Discrete Devices • Packaging — M otorola standard shipping A wide variety of discrete components from method for SOT’s is in vials; additionally, in M otorola's repertoire of reliability-proven sem icon­


    OCR Scan     		PDF BCX70J BC81740 BC850B BC817B BCW72 BCX704 BC817-25 BCX70G BC847A BC817-16 transistor 1f sot-23 sot23 AJ motorola sot 23 marking transistor marking code SOT-23 marking 1F transistor sot-23 transistor marking code SOT-23 2F marking 1P sot-23 sot 23 transistor 2f sot transistor pinout

    Untitled

    Abstract: No abstract text available
    Text: SyrnSEMi SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR SOT — 23 MMBTA42LT1 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 03 W (Tamb=25 °C) Collector current Icm : 0.3 A Collector base voltage V ( br ) cbo


    OCR Scan     		PDF MMBTA42LT1 30MHz MMBTA42LT1 OT-23 950TPY 550REF 037TPY 022REF

    Untitled

    Abstract: No abstract text available
    Text: 5YM5EMI SEMICONDUCTOR SOT -23 Plastic Encapsulate Transistors BC 856ALT1, B LT1 TRANSISTOR BC8 57ALT1 , BLT1 CLT1 BC8 58ALT1 , BLT1 CLT1 PNP SOT — 23 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.2 W (Tamb=25 °C) Collector current


    OCR Scan     		PDF 856ALT1, 57ALT1 58ALT1 BC856 BC857 BC858 BC858 BC856 100MHz -10mA

    Untitled

    Abstract: No abstract text available
    Text: : S v î^ S e m i ; SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR BC807 -16LT1 BC807 -25LT1 BC8 0 7 -40LT1 TRANSISTOR SOT — 23 1. BASE 2. EMI H E R 3. COLLECTOR FEATURES Power dissipation 0.3 Pcm Collector current 1 cm : PNP W -0 .5 (Tamb=25 °C)


    OCR Scan     		PDF BC807 -16LT1 -25LT1 -40LT1 -10mA OT-23 950TPY 037TPY 550REF