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    MHT5002

    Abstract: ST 2N3053 D28A9 D11C211B20 DC5501 DC6112B MD20 MM4645 MT75 BFS86
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. t - 40°c * - 45°C H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    PDF NPN110. USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 MHT5002 ST 2N3053 D28A9 D11C211B20 DC5501 DC6112B MD20 MM4645 MT75 BFS86

    2SC114 transistor

    Abstract: transistor 2SC114 2SC114 BSS43 D28A9 FZJ 101 FZJ 131 VX3866 MHT5001 usaf516es047m
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    PDF NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2SC114 transistor transistor 2SC114 2SC114 BSS43 D28A9 FZJ 101 FZJ 131 VX3866 MHT5001 usaf516es047m

    In5062

    Abstract: in 5062 1N4007W 1N4007 toshiba diode 1n4007 toshiba SCR 1 c106d 1N4004 toshiba 1N5059 diode scr 2n6396 1N4007 rectifier diode
    Text: 9097250 TOSHIBA CDI S C R E T E /O P T O TOSHIBA -CDISCRETE/OPTOJ 9 0D 16494 DE § /3 □OlkMTM 7 Diodes Switching Diode DO-35) VB(V) lo(MA) 2 5 (3 0 ) 50 1N4152 1N4150 1N 4151 1N 4153 \ 150 200 70 1N4150 1N 4606 50 70 75 1 N 914, A , B 1 N 916, A , B 1 N 4149


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    PDF DO-35) 1N4152 1N4150 DLN914, DLN916, DLN4149 DLN4446 DLN4447 DLN4448 In5062 in 5062 1N4007W 1N4007 toshiba diode 1n4007 toshiba SCR 1 c106d 1N4004 toshiba 1N5059 diode scr 2n6396 1N4007 rectifier diode

    1N4007 TOSHIBA

    Abstract: diode 1n4007 toshiba IN5625 IN5060 diode scr C106D MAC525-6 1N4004 toshiba C122B 1n914 surface mount diode 1N4148 surface mount
    Text: 9097250 T OS H I B A CD I S C R E T E / O P T O > TOSHIBA iDISCRETE/0PT0> 90D 16494 D Tzòt~ ts DE l'iO'iTSSO 001b4TM 7 T 'O -b 'O ? Diodes Switching Diode DO-35 VB(V) 2 5 (3 0 ) lo(MA) 1N4152 1N4150 150 70 50 1N4151 1N4153 200 1N4150 1N4606 50 70 75 1N914, A, B


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    PDF 001b4TM DO-35) 1N4152 1N4150 1N4151 1N4153 1N914, 1N916, 1N4149 1N4446 1N4007 TOSHIBA diode 1n4007 toshiba IN5625 IN5060 diode scr C106D MAC525-6 1N4004 toshiba C122B 1n914 surface mount diode 1N4148 surface mount

    IN5062

    Abstract: IN5625 scr C106B LN4007 diode in5061 in5625 diode in5626 IN5060 IN5624 IN5060 diode
    Text: Diodes Switching Diode DO-35 V„(V) 25(30) lo(MA) 1N4152 1N4150 150 70 50 1N4151 1N4153 200 1N4150 1N4606 50 70 75 1N914, A, B 1N916, A, B 1N4149 1N4446 1N4447 1N4448 1N4449 1N4148 Surface M ount Diode V„(V) 30 Iq(MA) DLN4152 150 75 DLN914, A, B DLN916, A, B


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    PDF DO-35) 1N4152 1N4150 1N4151 1N4153 1N914, 1N916, 1N4149 1N4446 1N4447 IN5062 IN5625 scr C106B LN4007 diode in5061 in5625 diode in5626 IN5060 IN5624 IN5060 diode