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    1CS MARKING Search Results

    1CS MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
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    1CS MARKING Price and Stock

    Marathon Special Products MS601-5-XP-1C

    Marking Strips - 601 (801) Series - Double Row - XP (General Purpose Laminate) - 5 Terminals.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MS601-5-XP-1C 1,044
    • 1 -
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    • 100 $0.99
    • 1000 $0.824
    • 10000 $0.75
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    Marathon Special Products MS600-3-1C

    Marking Strips - 600 (800) Series - Double Row - 3 Terminals.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MS600-3-1C 530
    • 1 -
    • 10 $7.37
    • 100 $1.56
    • 1000 $1.56
    • 10000 $1.56
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    Marathon Special Products MS601-4-XP-1C

    Marking Strips - 601 (801) Series - Double Row - XP (General Purpose Laminate) - 4 Terminals.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MS601-4-XP-1C 500
    • 1 -
    • 10 $2.758
    • 100 $1.063
    • 1000 $0.785
    • 10000 $0.685
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    Marathon Special Products MS602-12-XP-1C

    Marking Strips - 602 (802) Series - Double Row - XP (General Purpose Laminate) - 12 Terminals.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MS602-12-XP-1C 412
    • 1 -
    • 10 $26.37
    • 100 $4.37
    • 1000 $3.61
    • 10000 $3.61
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    Marathon Special Products MS600-12-XP-1C

    Marking Strips - 600 (800) Series - Double Row - XP (General Purpose Laminate) - 12 Terminals.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MS600-12-XP-1C 404
    • 1 -
    • 10 $13.04
    • 100 $6.18
    • 1000 $6.18
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    1CS MARKING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: OPERATING CHARACTERISTICS AT 25° C AMBIENT LED CHARACTER 1S 1T 1CS LUMINOUS I NT E N S I T Y PEAK WAVELENGTH DOMINANT WAVELENGTH VI EWING ANGLE 2 0 1 / 2 FORWARD VOLTAGE REV MIN TYP MAX UNITS TEST CONDITION 2500 4200 7200 mcd I f = 20 mA nm 518 nm 520 527 535


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    85TOLERANCES: PDF

    5Cs transistor

    Abstract: transistor 5cs 3036
    Text: Yuan Dean Scientific CO.,LTD 49TM Series ISDN S0INTERFACE TRANSFORMER SURFACE MOUNT, DUAL, 2000Vrms FEATURES MEETS THE PULSE WAVEFORM TEMPLATE OF CCITT 1.430 WHEN RECOMMENDED TRANSFORMER AND CHIP PAIR ARE USED. ● DEVELOPED FOR ENHANCED EMC PERFORMANCE. ● EXCELLENT LONGITUDINAL BALANCE.


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    2000Vrms 10KHz/100mV 100KHz/20mV 100KHz/100mV 49TM-XXXXXNL 49TM-3031* 49TM-3032* 49TM-3033* 49TM-3034* 49TM-3035* 5Cs transistor transistor 5cs 3036 PDF

    56TH-122L1

    Abstract: 56TH-122B1 162C1 56th transformer ratio 20 to 1 datasheet
    Text: Yuan Dean Scientific CO.,LTD 56TH Series T1/CEPT/ISDN-PRI TRANSFORMER REINFORCED INSULATION,3KVrms,SMT Part Number: FEATURES •Dual Surface Mount Package Contains Both Transmit. • Models Matched To Leading Transceiver Ics • Meet 3kv Reinforced Insulation


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    ---------------------10KHz/20mV --------100KHz/1V --100KHz/1V 25-Operating 56TH-122A1 56TH-122B1 56TH-162C1 56TH-122D1 56TH-152E1 56TH-122A2 56TH-122L1 56TH-122B1 162C1 56th transformer ratio 20 to 1 datasheet PDF

    512M 29

    Abstract: 1g mcp OneNAND mcp "NOR Flash" 16-BANK UtRAM Density sram 128m mrs marking
    Text: NOR-Flash Code Information 1/5 Last Updated : August 2009 K8XXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 - De-Multiplexed Burst 12 : 512, 16Bank 26 : 128M, 8M / 16Bank / 66) 27 : 128M, 8M / 16Bank / 77) 28 : 128M, 8M / 16Bank 29 : 128M, 8M / 16Bank / 88)


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    16Bank 16Bank 512M 29 1g mcp OneNAND mcp "NOR Flash" 16-BANK UtRAM Density sram 128m mrs marking PDF

    HYUD16162

    Abstract: HYUD16162B HY64UD16162B HY64UD16162B-DF60E HY64UD16162B-DF60I HY64UD16162B-DF70E HY64UD16162B-DF70I
    Text: HY64UD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Dec. 3. ’02 Preliminary 1.1 DC Spec.변경 Apr. 21. ‘03 This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not


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    HY64UD16162B 16Mbit HYUD16162B HYUD16162 HYUD16162B HY64UD16162B-DF60E HY64UD16162B-DF60I HY64UD16162B-DF70E HY64UD16162B-DF70I PDF

    HYUD16162B

    Abstract: HY64UD16162B HY64UD16162B-DF60E HY64UD16162B-DF60I HY64UD16162B-DF70E HY64UD16162B-DF70I
    Text: HY64UD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Dec. 3. ’02 Preliminary Initial This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not


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    HY64UD16162B 16Mbit 16bits. HYUD16162B HYUD16162B HY64UD16162B-DF60E HY64UD16162B-DF60I HY64UD16162B-DF70E HY64UD16162B-DF70I PDF

    HYUD16162B

    Abstract: HYUD16162
    Text: HY64UD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Dec. 3. ’02 Preliminary 1.1 DC Spec.변경 Apr. 21. ‘03 This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not


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    HY64UD16162B 16Mbit HYUD16162B HYUD16162B HYUD16162 PDF

    1CS MARKING

    Abstract: TCS1
    Text: HY64UD16162M Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul.18. ’ 01 Preliminary Oct. 07. ‘ 01


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    HY64UD16162M HYUD16162M 1CS MARKING TCS1 PDF

    HY64UD16162B

    Abstract: HYUD16162
    Text: HY64UD16162B-DF P xxx Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Dec. 3. ’02 Preliminary 1.1 DC Spec.변경 Apr. 21. ’03 1.2 Add to Lead Free Product Mar. 09. ‘04


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    HY64UD16162B-DF HY64UD16162B-DFxxxP HY64UD16162B-DFPxxx DESCR162B HY64UD16162B HYUD16162 PDF

    50T-1221A

    Abstract: 50-T1221A 50T-1222C 50T-1221
    Text: Yuan Dean Scientific CO.,LTD 50T Series T1 CARRIER INTERFACE TRANSFORMER FEATURES Part Number: •FOR T1/CEPT TELECOM APPLICATIONS •PROVIDE 1500Vrms ISOLATION •COMPACT SINGLE AND DUAL PACKAGES •DESIGNED TO MEET CCITT 7 & FCC •RECOGNIZED BY UL 1950.


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    1500Vrms -------------------100KHz/200mV -------100KHz/200mV Capacitance--100KHz/200mV 50T-1221B 50T-1221D 50T-1221A 50T-1221C 50T-1221A 50-T1221A 50T-1222C 50T-1221 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY64UD16162B- P Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Dec. 3. ’02 Preliminary 1.1 DC Spec.변경 Apr. 21. ’03 1.2 Add to Lead Free Product Mar. 09. ‘04 This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not


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    HY64UD16162B- 16Mbit HY64UD16162B HYUD16162B PDF

    Untitled

    Abstract: No abstract text available
    Text: HY64UD16322M Series Document Title 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul. 18. ’ 01 Preliminary Oct. 06. ’ 01


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    HY64UD16322M HYUD16322M PDF

    VL15

    Abstract: No abstract text available
    Text: HY64UD16162M Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul.18. ’ 01 Preliminary Oct. 07. ‘ 01


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    HY64UD16162M 100uA HYUD16162M VL15 PDF

    HYUD16162

    Abstract: HYUD16162M HY64UD16162M HY64UD16162M-DF70E HY64UD16162M-DF70I HY64UD16162M-DF85I
    Text: HY64UD16162M Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’01 Preliminary 1.1 Revised Jul. 03. ’01 Preliminary Jul.18. ’01 Preliminary Oct. 07. ‘01 Preliminary


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    HY64UD16162M HYUD16162M HYUD16162 HYUD16162M HY64UD16162M-DF70E HY64UD16162M-DF70I HY64UD16162M-DF85I PDF

    transistor bc 577

    Abstract: transistor bc 103
    Text: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code


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    Q62702-2372 OT-363 flE35bDS BC847S EHP00365 fl235b05 transistor bc 577 transistor bc 103 PDF

    transistor bc 499

    Abstract: 1CS K2 marking 1cs transistor Bc 580
    Text: SIEMENS BC 847S NPN Silicon AF Transistor Array 1For AF input stages and driver applications •High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package A R n 3 tr ETH "j>- Type Marking Ordering Code


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    Q62702-C2372 OT-363 BC847S transistor bc 499 1CS K2 marking 1cs transistor Bc 580 PDF

    transistor Bc 580

    Abstract: marking 1cs 847S transistor bc 100
    Text: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration


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    OT-363 Q62702-2372 Jan-20-1997 transistor Bc 580 marking 1cs 847S transistor bc 100 PDF

    transistor bc icbo nA npn

    Abstract: 847S Q62702-C2372 marking 1cs
    Text: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Type Marking Ordering Code


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    Q62702-C2372 OT-363 May-12-1998 transistor bc icbo nA npn 847S Q62702-C2372 marking 1cs PDF

    TG 2309

    Abstract: MMBT2369LT1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistors MMBT2369LT1 MMBT2369ALT1* COLLECTOR NPN Silicon 'M o to ro la Preferred D evice BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value C ollector-E m itter Voltage v CEO 15 Vdc C ollector-E m itter Voltage


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    MMBT2369LT1 MMBT2369ALT1* OT-23 O-236AB) MMBT2369ALT1 TG 2309 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY64UD16322A Series Document Title 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 03. ’03 Preliminary 1.1 Change process code May. 13. ’03 -B This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not


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    HY64UD16322A 32Mbit HYUD16322A PDF

    Untitled

    Abstract: No abstract text available
    Text: HY64SD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Dec. 4. ’02 Preliminary Initial This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not


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    HY64SD16162B 16Mbit 16bits. HYSD16162B PDF

    Untitled

    Abstract: No abstract text available
    Text: HY64LD16162M Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul.18. ’ 01 Preliminary Oct. 07. ‘ 01


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    HY64LD16162M 100uA HYLD16162M PDF

    HYNIX lot date code

    Abstract: 1CS MARKING HY64SD16162B HY64SD16162B-DF85E HY64SD16162B-DF85I HYSD16162B
    Text: HY64SD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Dec. 4. ’02 Preliminary Initial This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not


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    HY64SD16162B 16Mbit 16bits. HYSD16162B HYNIX lot date code 1CS MARKING HY64SD16162B-DF85E HY64SD16162B-DF85I HYSD16162B PDF

    Untitled

    Abstract: No abstract text available
    Text: PART NUMBER LED COLOR 5 5 1 - 1 502F GREEN 551 - I602F YELLOW 5 5 1 - 1 702F RE D REV CHARACTERISTICS LUMINOUS A R o H S C om p ì ian t 551 - IX02F Part N u m b e r s w i t h the "F" s u f f i x e n d i n g are R o H S C o m p l i a n t . E x a m p le. 55 I - I502F


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    I602F IX02F I502F PDF