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Abstract: No abstract text available
Text: 1CY7C1386BV25 CY7C1386BV25 CY7C1387BV25 PRELIMINARY 512K x 36 / 1M x 18 Pipelined DCD SRAM Features • • • • • • • • • • • • Fast clock speed: 200, 167, 150, 133 MHz Provide high-performance 3-1-1-1 access rate Fast OE access times: 3.0, 3.4, 3.8, 4.2 ns
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1CY7C1386BV25
CY7C1386BV25
CY7C1387BV25
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CY7C1386BV25
Abstract: CY7C1387BV25
Text: 1CY7C1386BV25 CY7C1386BV25 CY7C1387BV25 PRELIMINARY 512K x 36 / 1 Mb x 18 Pipelined DCD SRAM Features • • • • • • • • • • • • Fast clock speed: 200,166, 150, 133 MHz Provide high-performance 3-1-1-1 access rate Fast OE access times: 3.0, 3.2,3.4, 3.8, 4.2 ns
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1CY7C1386BV25
CY7C1386BV25
CY7C1387BV25
CY7C1386BV25
CY7C1387BV25
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CY7C1386B-133AC
Abstract: CY7C1386B CY7C1386B-200AC CY7C1387B
Text: 1CY7C1386B CY7C1386B CY7C1387B PRELIMINARY 512K x 36 / 1 Mb x 18 Pipelined DCD SRAM Features inputs, address-pipelining Chip Enable CE , burst control inputs (ADSC, ADSP, and ADV), write enables (BWa, BWb, BWc, BWd and BWE), and Global Write (GW). • •
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1CY7C1386B
CY7C1386B
CY7C1387B
CY7C1386B-133AC
CY7C1386B
CY7C1386B-200AC
CY7C1387B
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