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    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    1DON TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ANP015

    Abstract: AF4435 SMD Capacitor symbols SOP-14L Capacitor smd 680uf 16v AP2011 SB340 8870796 capacitor huang 470UF 35V SMD 6 PIN IC FOR PWM
    Text: ANP015 Application Note AP2011 High Efficiency Synchronous PWM Controller Preliminary Contents 1. AP2011 Specification 1.1 1.2 1.3 1.4 Features General Description Pin Assignments Pin Descriptions 1.5 Block Diagram 1.6 Absolute Maximum Ratings 2. Hardware


    Original     		ANP015 AP2011 ANP015 AF4435 SMD Capacitor symbols SOP-14L Capacitor smd 680uf 16v SB340 8870796 capacitor huang 470UF 35V SMD 6 PIN IC FOR PWM PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION PIN SYMBOL PARAMETER Drain-source voltage Drain current DC Tsp = 25 °C Drain current (DC) Tamb = 25 °C Total power dissipation Junction temperature


    OCR Scan     		OT223 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION PINNING - SOT404 QUICK REFERENCE DATA SYMBOL PARAMETER w o > N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface


    OCR Scan     		OT404 BUK9656-30 PDF

    BUK10B-S0GS

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSF:ET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other applications.


    OCR Scan     		BUK108-50GS hs/hs25 BUK10B-S0GS PDF

    BUK102-50GL

    Abstract: IEC134 T0220AB AAB3 buk102-500l
    Text: PHILIPS I N T E R N A T I O NA L tSE D • 711Dfl2b D0b3fl25 blfi « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK102-50GL Logic level DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and


    OCR Scan     		7110A2b D0b3fl25 BUK102-50GL ll3/lls25t IEC134 T0220AB AAB3 buk102-500l PDF

    Untitled

    Abstract: No abstract text available
    Text: m h a r r H FA1405 i s S E M I C O N D U C T O R • M M M T T Quad, High-Speed, Low Power, Video Operational Amplifier February1995 Description Features • M l Low Supply Current.5.8mA/OpAmp • High Input


    OCR Scan     		FA1405 560MHz 50MHz) PDF