S 3590A

Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout

UM0560

Abstract: STM8S105x6 STM8L STM8 bootloader STM8S105XX STM8S
Contextual Info: UM0560 User manual STM8L/S bootloader 1 Introduction This user manual contains the bootloader specifications for STM8L/S devices which contain a bootloader embedded in the system memory of the device the ROM . Through this firmware, the device memory can be erased and programmed using one of the standard

SM59128

Abstract: SM59128C40 SPWM IC spwm sm591 BRM20 SPWM circuit diagram
Contextual Info: SyncMOS Technologies International, Inc. SM59128 8-Bits Micro-controller Embedded 128KB flash & 1KB RAM & IIC & SPWM Product List Features SM59128C25, 25MHz 128KB internal flash MCU SM59128C40, 40MHz 128KB internal flash MCU z z z z Description z The SM59128 series product is an 8-bit single chip

ba37

Abstract: 48FBGA K8D1716U K8D1716UBC K8D1716UTC samsung nor flash BA251
Contextual Info: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary

AT26DF161A-SSU

Abstract: AT26DF161A AT26DF161A-MU AT26DF161A-SU
Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible – Supports SPI Modes 0 and 3 • 70 MHz Maximum Clock Frequency • Flexible, Uniform Erase Architecture • • • • • • • • • • – 4-Kbyte Blocks – 32-Kbyte Blocks

Contextual Info: A M D il ADVANCE INFORM ATIO N M i i .i i n - i i i i n i i in.i i i « Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L AD VA N TA G ES

BGA-56P-M01

Abstract: DS05-50216-1E
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50216-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8/×16) FLASH MEMORY & 2M (× 8/×16) STATIC RAM MB84VD2108XEA-70/85/MB84VD2109XEA-70/85 • FEATURES • Power Supply Voltage of 2.7 to 3.3 V

DN25D

Abstract: pt100 sensors SENSYM AD7707 AD7707BR AD7707BRU AD780 EVAL-AD7707EB RU-20
Contextual Info: a 3 V/5 V, ؎10 V Input Range, 1 mW 3-Channel 16-Bit, Sigma-Delta ADC AD7707 FEATURES Charge Balancing ADC 16 Bits No Missing Codes 0.003% Nonlinearity High Level ؎10 V and Low Level (؎10 mV) Input Channels True Bipolar ؎100 mV Capability on Low Level Input

Contextual Info: Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture - Thirty 32K Word 64K Byte Sectors with Individual Write Lockout - Eight 4K Word (8K Byte) Sectors with Individual Write Lockout - Two 16K Word (32K Byte) Sectors with Individual Write Lockout

Contextual Info: Features • 4.5V to 5.5V Read/Write • Access Time - 70 ns • Sector Erase Architecture - Thirty 32K Word 64K byte Sectors with Individual Write Lockout - Eight 4K Word (8K byte) Sectors with Individual Write Lockout - Two 16K Word (32K byte) Sectors with Individual Write Lockout

Contextual Info: ANALOG DEVICES FEATURES Charge Balancing ADC 24 Bits No Missing Codes 0.0015% Nonlinearity Five-Channel Programmable Gain Front End Gains from 1 to 128 Can Be Configured as Three Fully Differential Inputs or Five Pseudo-Differential Inputs Three-W ire Serial Interface

pl2303

Abstract: AN1310 PL2303 Prolific AN1310ui PIC18 bootloader AN1310 pic GPR circuit schematic diagram full free pic microcontroller details 16/pl2303 0408H pl2303 0408H
Contextual Info: AN1310 High-Speed Serial Bootloader for PIC16 and PIC18 Devices Author: E. Schlunder Microchip Technology Inc. INTRODUCTION Microchip’s enhanced Flash microcontrollers enable firmware to program itself. This is done by a “bootloader” providing a firmware kernel, residing in the

DL161

Abstract: DL162 DL163
Contextual Info: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while

M410000002

Abstract: DL161 DL162 DL163 m410000009 AM29DL164DT
Contextual Info: Am41DL16x4D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

DS42546

Contextual Info: DS42546 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL163D Top Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

A039h

Abstract: 3A400
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.

siemens vdo

Abstract: MB91F362GA MB91F369GAPQS1 BYX 13 400 R CRYSTAL CMAC FR51 TDT55 tdt7 lcd timer
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-16401-3E 32-bit RISC Microcontroller CMOS FR50 Family MB91360G Series MB91FV360GA/F362GA/F369GA • DESCRIPTION The Fujitsu MB91360G series is a standard microcontroller containing a wide range of I/O peripherals and bus

AT49BV1604

Abstract: AT49BV16X4 AT49F1604 AT49F1604T AT49F1614 AT49F1614T
Contextual Info: Features • 4.5V to 5.5V Read/Write • Access Time - 70 ns • Sector Erase Architecture • • • • • • • • • • – Thirty 32K Word 64K byte Sectors with Individual Write Lockout – Eight 4K Word (8K byte) Sectors with Individual Write Lockout

Contextual Info: 8 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space • Superior Reliability – Endurance: Pr el im in ar y – Bank1: 6Mbit 384K x 16 / 768K x 8 Flash – Bank2: 2Mbit (128K x 16 / 256K x 8) Flash

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this

SA30* diode

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE70/90 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

BUS ARCHITECTURE OF MICROPROCESSOR 68000

Abstract: a8000 ATMEL 322 MICROPROCESSOR 68000 AT49F1604 AT49F1604T AT49F1614 AT49F1614T
Contextual Info: Features • 4.5V to 5.5V Read/Write • Access Time - 90 ns • Sector Erase Architecture • • • • • • • • • • – Thirty 32K Word 64K byte Sectors with Individual Write Lockout – Eight 4K Word (8K byte) Sectors with Individual Write Lockout

AD7705

Contextual Info: a AD7705/AD7706/AD7707 Instrumentation Converter FAQs: Serial Interface How does the serial interface operate? The serial interface on this family of converters is implemented as a state machine. The interface works by counting clocks on each data transfer. Therefore, if you are performing a write operation to one of the ADC’s 8-bit registers, 8 SCLK cycles