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    1GHZ BJT RF Search Results

    1GHZ BJT RF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE Visit Murata Manufacturing Co Ltd
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd
    LXMS21NCMH-230 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd

    1GHZ BJT RF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control


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    PDF RF3023 10MHz 28dBm 58dBm RF3023 1980MHz) 915MHz) DS090709

    Untitled

    Abstract: No abstract text available
    Text: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control


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    PDF RF3023 RF3023 10MHz 28dBm 18dBm 915MHz) 1980MHz) DS091023

    Untitled

    Abstract: No abstract text available
    Text: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control


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    PDF RF3024 RF3024 10MHz 28dBm 18dBm 915MHz) 1980MHz) DS100118

    Untitled

    Abstract: No abstract text available
    Text: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control


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    PDF RF3023 RF3023 300kHz 28dBm DS100728 RF3023SR

    1ghz bjt

    Abstract: rf3024
    Text: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control


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    PDF RF3024 RF3024 300kHz 28dBm 18dBm DS100728 1ghz bjt

    Untitled

    Abstract: No abstract text available
    Text: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control


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    PDF RF3024 RF3024 10MHz DS120723 RF3024SR RF3024PCK-410

    Untitled

    Abstract: No abstract text available
    Text: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control


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    PDF RF3024 10MHz 28dBm 58dBm RF3024 915MHz) 1980MHz) DS090731

    rfmd sc70-6

    Abstract: 1ghz bjt RF3023
    Text: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control


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    PDF RF3023 RF3023 10MHz 28dBm 18dBm DS120723 rfmd sc70-6 1ghz bjt

    1ghz bjt

    Abstract: No abstract text available
    Text: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control


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    PDF RF3023 RF3023 300kHz 28dBm 18dBm DS120523 1ghz bjt

    Untitled

    Abstract: No abstract text available
    Text: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control


    Original
    PDF RF3024 RF3024 300kHz 28dBm 18dBm DS120523

    Untitled

    Abstract: No abstract text available
    Text: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control


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    PDF RF3024 RF3024 10MHz 28dBm 18dBm DS120723

    RF2316

    Abstract: TA0015 DIN4500B RF2312 RF2317 HBT transistor s parameters measures
    Text: TA0015  TA0015 RF2312/RF2317: High Linearity HBT Amplifiers for CATV Systems +LJK /LQHDULW\ +%7 $PSOLILHUV IRU &$79 6\VWHPV ,QWURGXFWLRQ The need for high linearity amplifiers arises from stress placed on communications channels by the addition of more data and the requirement to handle digitally modulated signals with high fidelity. As the amount of data


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    PDF TA0015 RF2312/RF2317: RF2316 TA0015 DIN4500B RF2312 RF2317 HBT transistor s parameters measures

    Untitled

    Abstract: No abstract text available
    Text: RFPP9850 1GHZ, 28DB GAIN GAAS/GAN PUSH PULL HYBRID Package: SOT-115J Features • Excellent Linearity  Superior Return Loss Performance  Extremely Low Distortion  Optimal Reliability  Suitable for PAL D and Flat NTSC Loading  Unconditionally Stable Under all


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    PDF RFPP9850 OT-115J 250mA 24VDC 40MHz 1003MHz RFPD9850 RFPP9850 1003MHz.

    RF2316

    Abstract: DIN4500B TA0015 HBT transistor s parameters measures
    Text: TA0015  TA0015 RF2312/RF2317: High Linearity HBT Amplifiers for CATV Systems       Monolithic Amplifiers using GaAs HBT technology have been developed. HBT based amplifiers offer extremely flat frequency response with high dynamic


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    PDF TA0015 RF2312/RF2317: 40dBm. RF2317 RF2316. RF2316 DIN4500B TA0015 HBT transistor s parameters measures

    Untitled

    Abstract: No abstract text available
    Text: RF1201 RF1201broadband 10W spdt switch BROADBAND 10W SPDT SWITCH Package: QFN, 6-Pin, 2mm x 2mm x 0.85mm Features         Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:


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    PDF RF1201 RF1201broadband -80dBc 40dBm IEEE802 11b/g 900MHz 1900MHz DS120625

    RFMD RF1201

    Abstract: HDR 1X2 RFmd SPDT
    Text: RF1201 RF1201broadband 10W spdt switch BROADBAND 10W SPDT SWITCH Package: QFN, 6-Pin, 2mm x 2mm x 0.85mm Features         Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:


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    PDF RF1201broadband RF1201 -80dBc 40dBm IEEE802 11b/g RF1201 appl500 900MHz 1900MHz RFMD RF1201 HDR 1X2 RFmd SPDT

    RF1200SPDT

    Abstract: HDR-1X2 HDR1X2 RF1200 RF1200PCBA-410
    Text: RF1200 SPDT SWITCH RoHS Compliant & Pb-Free Product Package Style: QFN, 6-pin, 2x2 Features „ „ „ „ „ Low Insertion Loss 0.3dB at 1GHz High Isolation 26dB at 1GHz Low Control Voltage 2.6V to 5.0V Harmonics H2: -80dBc@1GHz GaAs pHEMT Process RF1 1 6 VRF1


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    PDF RF1200 -80dBc IEEE802 11b/g RF1200 DS070517 1900MHz RF1200SPDT HDR-1X2 HDR1X2 RF1200PCBA-410

    Modeling of SOI FET for RF Switch Applications

    Abstract: No abstract text available
    Text: RTU2D-2 Modeling of SOI FET for RF Switch Applications Tzung-Yin Lee and Sunyoung Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the modeling of an SOI FET for RF switch applications. Given that the HF smallsignal predictability, i.e. the insertion loss and the isolation, is


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    PDF 12-stacked 12stacked Modeling of SOI FET for RF Switch Applications

    Untitled

    Abstract: No abstract text available
    Text: RF1200 RF1200broadband high power spdt switch BROADBAND HIGH POWER SPDT SWITCH Package: QFN, 6-Pin, 2mmx2mmx0.85mm Features       Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:


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    PDF RF1200 RF1200broadband -80dBc RF1200 1900MHz DS101202

    Y parameters of rf bjt

    Abstract: RF1200 RF1200PCBA-410 high power SPDT 1ghz bjt RF HDR1X2
    Text: RF1200 RF1200broadband high power spdt switch BROADBAND HIGH POWER SPDT SWITCH Package: QFN, 6-Pin, 2mmx2mmx0.85mm Features       Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:


    Original
    PDF RF1200 RF1200broadband -80dBc 11b/g RF1200 1900MHz DS101202 Y parameters of rf bjt RF1200PCBA-410 high power SPDT 1ghz bjt RF HDR1X2

    RF1201

    Abstract: RFMD RF1201 jammer gsm
    Text: RF1201 BROADBAND 10W SPDT SWITCH RFMD Green, RoHS Compliant, Pb-Free Product Package Style: QFN, 6-Pin, 2.00mmx2.00mmx0.85mm Features „ „ „ „ „ „ „ „ Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:


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    PDF RF1201 00mmx2 00mmx0 -80dBc 40dBm IEEE802 11b/g DS090216 1900MHz RF1201 RFMD RF1201 jammer gsm

    Untitled

    Abstract: No abstract text available
    Text: RF1200 SPDT SWITCH RoHS Compliant & Pb-Free Product Package Style: QFN, 6-pin, 2x2 Features „ „ „ „ „ Low Insertion Loss 0.3dB at 1GHz High Isolation 26dB at 1GHz Low Control Voltage 2.6V to 5.0V Harmonics H2: -80dBc@1GHz GaAs pHEMT Process RF1 1 6 VRF1


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    PDF RF1200 -80dBc IEEE802 11b/g RF1200 2002/95/EC DS070726

    RFMD RF1201

    Abstract: Bluetooth Jammer RF1201 jammer gsm gsm jammer Y parameters of rf bjt RFmd SPDT
    Text: RF1201 RF1201broadband 10W spdt switch BROADBAND 10W SPDT SWITCH Package: QFN, 6-Pin, 2mmx2mmx0.85mm        Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage: 2.6V to 5.0V


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    PDF RF1201 RF1201broadband -80dBc 40dBm IEEE802 11b/g 1900MHz DS101202 RFMD RF1201 Bluetooth Jammer RF1201 jammer gsm gsm jammer Y parameters of rf bjt RFmd SPDT

    Untitled

    Abstract: No abstract text available
    Text: RFÜ RF2326 [: Preliminary MICRO DEVICES 3 V GENERAL PURPOSE AM PLIFIER Typical Applications • Broadband Gain Blocks • Driver Stage for Power Amplifiers • Final PA for Low-Power Applications • Oscillator Loop Amplifiers • IF or RF Buffer Amplifiers


    OCR Scan
    PDF RF2326 RF2326