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    1J SOT23 Search Results

    1J SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation
    SF Impression Pixel

    1J SOT23 Price and Stock

    Nexperia BCX71J,235

    Bipolar Transistors - BJT SOT23 45V .1A PNP BJT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BCX71J,235 Reel 30,000
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    Nexperia BCX71J,215

    Bipolar Transistors - BJT SOT23 45V .1A PNP BJT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BCX71J,215 Reel 30,000
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    1J SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MARKING 68W SOT-23

    Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
    Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06


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    25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23 PDF

    BAV19

    Abstract: BAV20 BAV21 FDH400
    Text: BAV19 / BAV20 / BAV21 Discrete POWER & Signal Technologies N BAV19 / 20 / 21 DO-35 High Voltage General Purpose Diode Sourced from Process 1J. NSC alternate for BAV19 & BAV20: FDH400. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


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    BAV19 BAV20 BAV21 DO-35 BAV19 BAV20: FDH400. BAV20 BAV21 FDH400 PDF

    DG302 to220

    Abstract: MAX724 equivalent 9532 zener MAX233 application notes MAX7219 equivalent MAX232CPE application sheet MAX238 MX7226 MAX249 MAX485 application notes
    Text: November 1, 1996 RR-1J Product Reliability Report This report presents the product reliability data for Maxim’s analog products. The data was acquired from extensive reliability stress testing performed in 1995. It is separated into seven fabrication processes: 1 Standard


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    DG302 to220

    Abstract: MAX233 application notes zener 9514 MAX249 MAX238 9545 MAX232CPE application sheet max809 ICM7218AIPI MAX232 application notes
    Text: November 1, 1996 RR-1J Product Reliability Report This report presents the product reliability data for Maxim’s analog products. The data was acquired from extensive reliability stress testing performed in 1995. It is separated into seven fabrication processes: 1 Standard


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    marking 1E

    Abstract: BC848
    Text: BC847 BC848 SMALL SIGNAL NPN TRANSISTORS • ■ ■ ■ Type Marking BC847A 1E BC847B 1F BC848A 1J BC848B 1K 2 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL GENERAL PURPOSE PNP COMPLEMENTS ARE RESPECTIVELY


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    BC847 BC848 BC847A BC847B BC848A BC848B BC857 BC858 OT-23 marking 1E BC848 PDF

    IN5225

    Abstract: BAV19 BAV20 BAV21 DO-35 BLUE CATHODE
    Text: BAV19 / BAV20 / BAV21 BAV19 / 20 / 21 DO-35 High Voltage General Purpose Diode Sourced from Process 1J. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V V V mA W IV Working Inverse Voltage IO Average Rectified Current


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    BAV19 BAV20 BAV21 DO-35 BAV19 BAV20 IN5225 BAV21 DO-35 BLUE CATHODE PDF

    MMBT2369

    Abstract: MARK 1J HIGH SPEED SWITCHING NPN SOT23 MMBT2369 SOT23
    Text: MMBT2369 NPN Switching Transistor MMBT2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. C E SOT-23 Mark: 1J B Absolute Maximum Ratings * T a Symbol


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    MMBT2369 MMBT2369 100mA. OT-23 MARK 1J HIGH SPEED SWITCHING NPN SOT23 MMBT2369 SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT2369 / PN2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. MMBT2369 PN2369 C E SOT-23 B TO-92 1 Mark: 1J Absolute Maximum Ratings * T a Symbol


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    MMBT2369 PN2369 100mA. MMBT2369 OT-23 PN2369 PDF

    MMBT2369

    Abstract: HIGH SPEED SWITCHING NPN SOT23
    Text: MMBT2369 MMBT2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. G S D SOT-23 Mark: 1J Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol


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    MMBT2369 100mA. OT-23 MMBT2369 HIGH SPEED SWITCHING NPN SOT23 PDF

    PN2369

    Abstract: PN2369 EQUIVALENT HIGH SPEED SWITCHING NPN SOT23 FAIRCHILD SOT-23 MARK 30 MMBT2369
    Text: MMBT2369 / PN2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. MMBT2369 PN2369 C E SOT-23 B TO-92 1 Mark: 1J Absolute Maximum Ratings * T a Symbol


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    MMBT2369 PN2369 100mA. MMBT2369 OT-23 PN2369 PN2369 EQUIVALENT HIGH SPEED SWITCHING NPN SOT23 FAIRCHILD SOT-23 MARK 30 PDF

    BAV19

    Abstract: BAV20 BAV21 MARK GM DIODE IN5225A Color code diode DO-35
    Text: BAV19 / BAV20 / BAV21 BAV19 / 20 / 21 DO-35 COLOR BAND DENOTES CATHODE High Voltage General Purpose Diode Sourced from Process 1J. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 100 150 200 200 V V V mA W IV Working Inverse Voltage


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    BAV19 BAV20 BAV21 DO-35 BAV19 BAV20 BAV21 MARK GM DIODE IN5225A Color code diode DO-35 PDF

    BAV19

    Abstract: BAV20 DIODE 1J BAV21 FDH400
    Text: BAV19 / 20 / 21 DO-35 High Voltage General Purpose Diode Sourced from Process 1J. NSC alternate for BAV19 & BAV20: FDH400. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V V V mA W IV Working Inverse Voltage IO Average Rectified Current


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    BAV19 DO-35 BAV19 BAV20: FDH400. BAV20 BAV21 BAV20 DIODE 1J BAV21 FDH400 PDF

    BC848

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC848 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 1J 1 2 Item Marking Description Device Mark 1 BC848 hFE Grade J J, K, L * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


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    BC848 OT-23 BC848 PDF

    1nS pulse width circuit

    Abstract: 9a sot23 FMMT2369A FMMT2369 FMMT2369R FMMTA2369A FMMTA2369AR HIGH SPEED SWITCHING NPN SOT23 DSA003691
    Text: FMMT2369 FMMT2369A ISSUE 3 – AUGUST 1995 APPLICATIONS These devices are suitable for use in high speed, low current switching applications tON CIRCUIT t1 +10.6V 3V 3K3Ω CS < 4pF * -1.5V < 1ns tOFF CIRCUIT t1 +10.75V 3V 270Ω B SOT23 < 1ns Pulse width t1 =300ns


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    FMMT2369 FMMT2369A FMMT2369R FMMTA2369A FMMTA2369AR 300ns 1nS pulse width circuit 9a sot23 FMMT2369A FMMT2369 FMMT2369R HIGH SPEED SWITCHING NPN SOT23 DSA003691 PDF

    MRGF

    Abstract: LP73 UR73D LA73 LT73 NT73 RF73 RK73 RN73 SG73
    Text: Appendix E pad dimensions standard soldering pad dimensions The optimum soldering pad dimensions may differ depending on soldering conditions, however, the following land dimensions are generally recommended. WK73 RK73 SG73 RN73 RN73H SR73 LT73 NT73 PT72 LA73


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    RN73H SDT73 MRGF LP73 UR73D LA73 LT73 NT73 RF73 RK73 RN73 SG73 PDF

    B 660 TG

    Abstract: No abstract text available
    Text: BC847 BC849 BC846 BC848 BC850 SOT23 IMPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS PARTMARKING DETAILS:BC848B - 1K BC846A - 1A BC846B - 1B BC848C - 1L 1E BC849B - 2B BC847A - BC847B - 1F BC849C - 2C 1G BC850B - 2F BC848A - 1J BC850C - 2G BC847C - ABSOLUTE MAXIMUM RATINGS


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    BC847 BC849 BC846 BC848 BC850 BC848B BC846A BC846B BC848C BC849B B 660 TG PDF

    b45 sot23

    Abstract: No abstract text available
    Text: BC847 BC848 r i 7 SGS-THOMSON m 7# KaO B©SILECTI3 raC©i SMALL SIGNAL NPN TRANSISTORS Type M arking BC847A 1E BC847B 1F BC848A 1J BC848B 1K . SILICON EPITAXIAL PLANAR NPN TRANSISTORS • MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS


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    BC847 BC848 BC847A BC847B BC848A BC848B BC857 BC858 OT-23 b45 sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: • This Pro Electron Series ^ CES* V V Min By Its Respective TO-236 (49) 30 30 5 15 BC84BB (IK.) TO-236 (49) 30 30 5 BC&48C (1L.) TO-236 (49) 30 30 ■ (V) Min BC848A (1J.) BC849C (2C.) TO-236 (49) 30 BC850B (2F.) TO-236 (49) BC850C (2G.) (V) Min V V BE(SAT)


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    OT-23 004G523 PDF

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Diodes Type m in iR e e l O rd e r N um ber 500 pcs. d " / w 1 \ V - , 1J jL SOT23 R a tin g s m in iB a g Zlr M M ax VR 100 pcs. T rr M ax cD P a rt M a rk in g S c h e m a tic T o p V iew S ingle D iode B A S 16 M M B D 914 3 72-0016 72-0914


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    100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors SOT23 B SOT23 Case NPN miniReel a » miniBag Order Order Number Number l ^ 7 } Type 500 pcs. ^ 100 pcs. 0 NPN General Purpose MMBT2369 73-2369 53-2369 BC818-16 73-8181 53-8181 BC818-25 73-8182 53-8182 BC818-40 73-8183 53-8183 BC848A 73-8481 53-8481


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    MMBT2369 BC818-16 BC818-25 BC818-40 BC848A BC848B BC848C BCW31 BCW32 BCW33 PDF

    Untitled

    Abstract: No abstract text available
    Text: FMMT2369 FMMT2369A t0 N CIRCUIT 270Q 3V i 3K3Í2 < Pulse width t1 =300ns Duty cycle = 2% t0 FF CIRCUIT Duty cycle = 2% STORAGE TEST CIRCUIT Duty cycle = 2% * Total shunt capacitance of test jig and connectors 3-69 Cg<4pF4 FMMT2369 | FMMT2369A SOT23 NPN SILICON PLANAR


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    FMMT2369 FMMT2369A 300ns FMMT2369R FMMTA2369A FMMTA2369AR FMMT2369 10iiA, PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Reel = 500pcs. SOT23 Case NPN Bag = 100pcs&#39; m i n iR e e l O rd e r Type R a tin g s m in iB a g N um ber V j • O rd e r M d VCEO Ic hpE @Ic fx P a rt V mA M in -M a x V ce (M H z ) M a rk in g 25V 500m A N u m b e r K iS S S ! N P N G e n e ra l P u rp o se


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    500pcs. 100pcs' C848A C848B 100mA 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 - SEPTEMBER 1995 O FEATURES * H igh VCE0 * L o w s a tu ra tio n v o lta g e CO M PLEM ENTARY TYPES - p C BCV27 - BCV28 BCV47 - BCV48 PAR TM ARKING DETAILS - BCV27 - ZFF B C V 4 7 - ZFG SOT23


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    BCV27 BCV28 BCV47 BCV48 BCV47 PDF

    AW74

    Abstract: No abstract text available
    Text: SOT23 HIGH SPEED SWITCHING DIODE PAIR COMMON ANODE ISSUE 3 - JULY 1998 PIN CONFIGU RATIO N 1 A PARTM ARKING DETAILS B A W 74 - W 74 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL C o n tin u o u s Reverse V o lta g e VR A v e ra g e O u tp u t R e c tifie d C u rre n t


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    BAV74 AW74 PDF