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    1KS TRANSISTOR Search Results

    1KS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1KS TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor ballast 1000W

    Abstract: transistor 1000W 1030 mhz 1000W TRANSISTOR MAPRST1030-1KS J22 transistor
    Text: AVIONICS PULSED POWER TRANSISTOR 1000 WATTS, 1030 MHz, 10us PULSE, 1% DUTY 23 Jan 2007 Outline Drawing Features • • • • • • • • • MAPRST1030-1KS NPN Silicon Microwave Power Transistors Common Base Configuration Broadband Class C Operation


    Original     		PDF MAPRST1030-1KS transistor ballast 1000W transistor 1000W 1030 mhz 1000W TRANSISTOR MAPRST1030-1KS J22 transistor

    TRANSISTOR 618

    Abstract: J22 transistor "RF Power Transistor" RF POWER TRANSISTOR RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 3 GHZ 200 watts RF NPN POWER TRANSISTOR 3 GHZ RF TRANSISTOR TRANSISTOR 200 GHZ MAPRST1030-1KS
    Text: Advanced Datasheet Rev 17-06-2005 MAPRST1030-1KS Avionics Pulsed RF Power Transistor 1000 Watts, 1030 MHz, 10µs Pulse Width, 1% Duty Cycle Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration


    Original     		PDF MAPRST1030-1KS TRANSISTOR 618 J22 transistor "RF Power Transistor" RF POWER TRANSISTOR RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 3 GHZ 200 watts RF NPN POWER TRANSISTOR 3 GHZ RF TRANSISTOR TRANSISTOR 200 GHZ MAPRST1030-1KS

    transistor 1000W

    Abstract: 1030
    Text: MAPRST1030-1KS Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10 s Pulse, 1% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation


    Original     		PDF MAPRST1030-1KS transistor 1000W 1030

    transistor 1000W

    Abstract: transistor ballast 1000W NPN 1000w MAPRST1030-1KS 1030 mhz
    Text: MAPRST1030-1KS Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10 s Pulse, 1% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation


    Original     		PDF MAPRST1030-1KS transistor 1000W transistor ballast 1000W NPN 1000w MAPRST1030-1KS 1030 mhz

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY SFT8600/4 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: 562 404-4474 * Fax: (562) 404-1773 1 AMP 1000 VOLTS NPN TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • • • • • • • BVCER to 1000 volts Very Low Saturation Voltage


    Original     		PDF SFT8600/4 250mA 2N5010-15 20mADC 100mADC 10mADC)

    bf850

    Abstract: marking CODE 1BS BC846-BC850 BC847FB marking 1ks 1bs sot323 1Bs sot-23 marking 1F SOT323 BC846 BC846B
    Text: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package 1)


    Original     		PDF BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW OT323 bf850 marking CODE 1BS BC846-BC850 BC847FB marking 1ks 1bs sot323 1Bs sot-23 marking 1F SOT323 BC846 BC846B

    BC 945

    Abstract: BC847F-BC850F BC847 SOT23 BF850 marking code marking CODE 1BS 1bs sot323 BC849CW G t marking SOT323 marking 1F SOT323
    Text: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP 1 2006-09-19


    Original     		PDF BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW OT323 BC 945 BC847F-BC850F BC847 SOT23 BF850 marking code marking CODE 1BS 1bs sot323 BC849CW G t marking SOT323 marking 1F SOT323

    transistor A 562

    Abstract: STX7905 STX6905
    Text: PRELIMINARY STX7905 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: 562 404-4474 * Fax: (562) 404-1773 1 AMP 600 VOLTS NPN TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • • • • • • BVCBO 600V. Fast Switching. Low Leakage.


    Original     		PDF STX7905 200oC STX6905. 20uADC) 600VDC) 25mADC, 50mADC 10VDC, 30VDC transistor A 562 STX7905 STX6905

    marking 1F SOT323

    Abstract: marking 1ks 1LS SOT 23 sot-323 transistor marking code 15 BC846AW BC846BW BC846W BC847AW BC847BW BC847W
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor BC846W/BC847W/BC848W FEATURES z Low Current. z Low voltage. z Power dissipation. PC=200mW Pb Lead-free APPLICATIONS z General purpose switching and amplification application.


    Original     		PDF BC846W/BC847W/BC848W 200mW) OT-323 BC846W BC847W BC848W marking 1F SOT323 marking 1ks 1LS SOT 23 sot-323 transistor marking code 15 BC846AW BC846BW BC846W BC847AW BC847BW BC847W

    TR0007A

    Abstract: STX6905 STX7905 pnp transistor 600V transistor A 562
    Text: PRELIMINARY STX6905 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: 562 404-4474 * Fax: (562) 404-1773 1 AMP 600 VOLTS PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • • • • • • BVCBO 600V. Fast Switching. Low Leakage.


    Original     		PDF STX6905 200oC STX7905. 20uADC) 600VDC) 25mADC, 50mADC 10VDC, 30VDC TR0007A STX6905 STX7905 pnp transistor 600V transistor A 562

    1B marking

    Abstract: No abstract text available
    Text: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package1)


    Original     		PDF BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW BC847A 1B marking

    1LS transistor

    Abstract: 61 TRANSISTOR marking 1ks Q62702-C2155 Q62702-C2156 Q62702-C2157 transistor marking T2
    Text: NPN Silicon Double Transistors BCV 61 Preliminary Data To be used as a current mirror ● Good thermal coupling and VBE matching ● High current gain ● Low emitter-saturation voltage ● Type Marking Ordering Code tape and reel BCV 61 A BCV 61 B BCV 61 C


    Original     		PDF Q62702-C2155 Q62702-C2156 Q62702-C2157 OT-143 1LS transistor 61 TRANSISTOR marking 1ks Q62702-C2155 Q62702-C2156 Q62702-C2157 transistor marking T2

    top marking 1B sot23

    Abstract: top marking 3c sot23 BC847, 215 sot323 marking code A.C 1BC847BL3 2Cs sot23
    Text: BC847.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC857.-BC860. PNP • Pb-free (RoHS compliant) package


    Original     		PDF BC847. -BC850. BC857. -BC860. Q1011) 1BC847BL3 BC847A BC847B BC847BL3* BC847BW top marking 1B sot23 top marking 3c sot23 BC847, 215 sot323 marking code A.C 1BC847BL3 2Cs sot23

    KTC3230

    Abstract: KTC3231
    Text: SEMICONDUCTOR KTC3231 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT APPLICATION. A R S E FEAUTRES F ᴌLarge Collector Current Capability. P Q D B ᴌLarge Collector Power Dissipation Capability. MAXIMUM RATING Ta=25ᴱ


    Original     		PDF KTC3231 130uF KTC3230 KTC3231

    BC846 Infineon

    Abstract: 1bs sot323 marking 1F SOT323 BC846 BC846A BC846B BC846BW BC847A BC847B BC850
    Text: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package 1)


    Original     		PDF BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW OT323 BC846 Infineon 1bs sot323 marking 1F SOT323 BC846 BC846A BC846B BC846BW BC847A BC847B BC850

    BC846 Infineon

    Abstract: BC847BL3 bc846 base resistance for SOT23 BC 945 BC847BF marking 2Gs 1bs sot323 BC 945 p marking 1F SOT323
    Text: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package 1)


    Original     		PDF BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW OT323 BC846 Infineon BC847BL3 bc846 base resistance for SOT23 BC 945 BC847BF marking 2Gs 1bs sot323 BC 945 p marking 1F SOT323

    BCV61

    Abstract: BCV61A BCV61B BCV61C VPS05178
    Text: BCV61 NPN Silicon Double Transistor 3  To be used as a current mirror  Good thermal coupling and VBE matching 4  High current gain  Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration


    Original     		PDF BCV61 VPS05178 EHA00012 BCV61A OT143 BCV61B BCV61C EHN00002 BCV61 BCV61A BCV61B BCV61C VPS05178

    VPS05178

    Abstract: BCV61
    Text: BCV 61 NPN Silicon Double Transistor 3 • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain 4 • Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking


    Original     		PDF VPS05178 EHA00012 OT-143 EHN00002 Sep-30-1999 EHP00940 EHP00942 VPS05178 BCV61

    BCV61

    Abstract: No abstract text available
    Text: BCV61 NPN Silicon Double Transistor 3  To be used as a current mirror  Good thermal coupling and VBE matching 4  High current gain  Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration


    Original     		PDF BCV61 VPS05178 EHA00012 BCV61A BCV61B BCV61C OT143 OT143 BCV61

    C1741

    Abstract: Q62702-C1741 bc847 1Bs sot-23 BC850 C1885 bc 846 marking 848 bc 580 BC848BC
    Text: NPN Silicon AF Transistors BC 846 . BC 850 Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 PNP


    Original     		PDF Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 C1741 Q62702-C1741 bc847 1Bs sot-23 BC850 C1885 bc 846 marking 848 bc 580 BC848BC

    marking 1ks

    Abstract: BCV61
    Text: BCV61 NPN Silicon Double Transistor 3  To be used as a current mirror  Good thermal coupling and VBE matching 4  High current gain  Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration


    Original     		PDF BCV61 VPS05178 EHA00012 BCV61A BCV61B BCV61C OT143 OT143 marking 1ks BCV61

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Double Transistors BCV61 • To be used as a current mirror • Good thermal coupling and V be matching • High current gain • Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 61 A BCV61 B BCV 61 C 1Js 1Ks


    OCR Scan     		PDF BCV61 BCV61 Q62702-C2155 Q62702-C2156 Q62702-C2157 OT-143 fi235b05 fl235b05

    3.6C

    Abstract: No abstract text available
    Text: H ìt t a-»-» : Êw ÊiC rïïjSG iT lÈ f I I I V I 140 Commerce Drive Montgomeryviile, PA 18936-1013 ^ ^ ^ «* * SD1 496 Tel: 215 631-9840 RF & MICROWAVE TRANSISTORS 860-900MHZ CLASS C, BASE STATIONS • CLASS C TRANSISTOR * FREQ U EN CY • V O LTA G E


    OCR Scan     		PDF 860-900MHZ 300MHz SD1496 3.6C

    transistor marking code 7e

    Abstract: D 843 Transistor transistor MUI
    Text: SIEMENS NPN Silicon Double Transistors • • • • BCV61 To be used as a current mirror Good thermal coupling and V b e matching High current gain Low emitter-saturation voltage Type Marking Ordering Code tape and reel B C V 61 A B C V 61 B B C V 61 C


    OCR Scan     		PDF BCV61 Q62702-C2155 Q62702-C2156 Q62702-C2157 transistor marking code 7e D 843 Transistor transistor MUI