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    1LS TRANSISTOR Search Results

    1LS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    1LS TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    top marking 1B sot23

    Abstract: top marking 3c sot23 BC847, 215 sot323 marking code A.C 1BC847BL3 2Cs sot23
    Text: BC847.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC857.-BC860. PNP • Pb-free (RoHS compliant) package


    Original     		BC847. -BC850. BC857. -BC860. Q1011) 1BC847BL3 BC847A BC847B BC847BL3* BC847BW top marking 1B sot23 top marking 3c sot23 BC847, 215 sot323 marking code A.C 1BC847BL3 2Cs sot23 PDF

    marking 1F SOT323

    Abstract: marking 1ks 1LS SOT 23 sot-323 transistor marking code 15 BC846AW BC846BW BC846W BC847AW BC847BW BC847W
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor BC846W/BC847W/BC848W FEATURES z Low Current. z Low voltage. z Power dissipation. PC=200mW Pb Lead-free APPLICATIONS z General purpose switching and amplification application.


    Original     		BC846W/BC847W/BC848W 200mW) OT-323 BC846W BC847W BC848W marking 1F SOT323 marking 1ks 1LS SOT 23 sot-323 transistor marking code 15 BC846AW BC846BW BC846W BC847AW BC847BW BC847W PDF

    1B marking

    Abstract: No abstract text available
    Text: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package1)


    Original     		BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW BC847A 1B marking PDF

    siemens transistor t2

    Abstract: 1LS transistor transistor T1 Q62702-C2155 Q62702-C2156 Q62702-C2157 marking 1ks transistor marking T2 CE030
    Text: NPN Silicon Double Transistors BCV 61 Preliminary Data To be used as a current mirror ● Good thermal coupling and VBE matching ● High current gain ● Low emitter-saturation voltage ● 3 4 Type Marking Ordering Code tape and reel BCV 61 A BCV 61 B BCV 61 C


    Original     		Q62702-C2155 Q62702-C2156 Q62702-C2157 OT-143 siemens transistor t2 1LS transistor transistor T1 Q62702-C2155 Q62702-C2156 Q62702-C2157 marking 1ks transistor marking T2 CE030 PDF

    1LS transistor

    Abstract: 61 TRANSISTOR marking 1ks Q62702-C2155 Q62702-C2156 Q62702-C2157 transistor marking T2
    Text: NPN Silicon Double Transistors BCV 61 Preliminary Data To be used as a current mirror ● Good thermal coupling and VBE matching ● High current gain ● Low emitter-saturation voltage ● Type Marking Ordering Code tape and reel BCV 61 A BCV 61 B BCV 61 C


    Original     		Q62702-C2155 Q62702-C2156 Q62702-C2157 OT-143 1LS transistor 61 TRANSISTOR marking 1ks Q62702-C2155 Q62702-C2156 Q62702-C2157 transistor marking T2 PDF

    BCV61

    Abstract: BCV61A BCV61B BCV61C VPS05178
    Text: BCV61 NPN Silicon Double Transistor 3  To be used as a current mirror  Good thermal coupling and VBE matching 4  High current gain  Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration


    Original     		BCV61 VPS05178 EHA00012 BCV61A OT143 BCV61B BCV61C EHN00002 BCV61 BCV61A BCV61B BCV61C VPS05178 PDF

    VPS05178

    Abstract: BCV61
    Text: BCV 61 NPN Silicon Double Transistor 3 • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain 4 • Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking


    Original     		VPS05178 EHA00012 OT-143 EHN00002 Sep-30-1999 EHP00940 EHP00942 VPS05178 BCV61 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Double Transistors BCV61 • To be used as a current mirror • Good thermal coupling and V be matching • High current gain • Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 61 A BCV61 B BCV 61 C 1Js 1Ks


    OCR Scan     		BCV61 BCV61 Q62702-C2155 Q62702-C2156 Q62702-C2157 OT-143 fi235b05 fl235b05 PDF

    BC846 Infineon

    Abstract: 1bs sot323 marking 1F SOT323 BC846 BC846A BC846B BC846BW BC847A BC847B BC850
    Text: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package 1)


    Original     		BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW OT323 BC846 Infineon 1bs sot323 marking 1F SOT323 BC846 BC846A BC846B BC846BW BC847A BC847B BC850 PDF

    BC 945

    Abstract: BC847F-BC850F BC847 SOT23 BF850 marking code marking CODE 1BS 1bs sot323 BC849CW G t marking SOT323 marking 1F SOT323
    Text: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP 1 2006-09-19


    Original     		BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW OT323 BC 945 BC847F-BC850F BC847 SOT23 BF850 marking code marking CODE 1BS 1bs sot323 BC849CW G t marking SOT323 marking 1F SOT323 PDF

    transistor marking code 7e

    Abstract: D 843 Transistor transistor MUI
    Text: SIEMENS NPN Silicon Double Transistors • • • • BCV61 To be used as a current mirror Good thermal coupling and V b e matching High current gain Low emitter-saturation voltage Type Marking Ordering Code tape and reel B C V 61 A B C V 61 B B C V 61 C


    OCR Scan     		BCV61 Q62702-C2155 Q62702-C2156 Q62702-C2157 transistor marking code 7e D 843 Transistor transistor MUI PDF

    bf850

    Abstract: marking CODE 1BS BC846-BC850 BC847FB marking 1ks 1bs sot323 1Bs sot-23 marking 1F SOT323 BC846 BC846B
    Text: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package 1)


    Original     		BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW OT323 bf850 marking CODE 1BS BC846-BC850 BC847FB marking 1ks 1bs sot323 1Bs sot-23 marking 1F SOT323 BC846 BC846B PDF

    marking 1ks

    Abstract: marking BCV transistor marking T2 BCV61
    Text: BCV61 NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching 3 2 • High current gain 4 1 • Low collector-emitter saturation voltage • Pb-free RoHS compliant package • Qualified according AEC Q101


    Original     		BCV61 EHA00012 BCV61B BCV61C OT143 OT143 marking 1ks marking BCV transistor marking T2 BCV61 PDF

    2SD1415A

    Abstract: No abstract text available
    Text: TO SH IBA 2SD1415A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2 S D 1 4 1 5A HIGH POWER SWITCHING APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0 .3 . 0 3 . 2 ± 0.2 2 .7 ± Q . 2 IP • High DC Current Gain


    OCR Scan     		2SD1415A 2SD1415A PDF

    C1741

    Abstract: Q62702-C1741 bc847 1Bs sot-23 BC850 C1885 bc 846 marking 848 bc 580 BC848BC
    Text: NPN Silicon AF Transistors BC 846 . BC 850 Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 PNP


    Original     		Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 C1741 Q62702-C1741 bc847 1Bs sot-23 BC850 C1885 bc 846 marking 848 bc 580 BC848BC PDF

    BCV61

    Abstract: BCV61B BCV61C BFP181 E6327 VPS05178 transistor marking ac transistor marking T2
    Text: BCV61 NPN Silicon Double Transistor 3 • To be used as a current mirror • Good thermal coupling and V BE matching • High current gain 4 • Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking


    Original     		BCV61 VPS05178 EHA00012 BCV61B OT143 BCV61C BCV61 BCV61B BCV61C BFP181 E6327 VPS05178 transistor marking ac transistor marking T2 PDF

    marking 1ks

    Abstract: BCV61
    Text: BCV61 NPN Silicon Double Transistor 3  To be used as a current mirror  Good thermal coupling and VBE matching 4  High current gain  Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration


    Original     		BCV61 VPS05178 EHA00012 BCV61A BCV61B BCV61C OT143 OT143 marking 1ks BCV61 PDF

    H12E

    Abstract: BCV61 transistor marking T2 BCV61A BCV61B BCV61C BFP181 h11e
    Text: BCV61 NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain 3 2 4 1 • Low collector-emitter saturation voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		BCV61 EHA00012 OT143 BCV61B BCV61C H12E BCV61 transistor marking T2 BCV61A BCV61B BCV61C BFP181 h11e PDF

    Untitled

    Abstract: No abstract text available
    Text: Special Purpose Fuses Semiconductor Fuses 150 – 1300 VAC • Very Fast Acting • 1 – 6000 Amperes Semiconductor Fuses Littelfuse Semiconductor fuses are very fast acting fuses designed specifically for the protection of diodes, thyristors, triacs, and other


    Original     		PDF

    F21E

    Abstract: transistors BC 848 ic 846 l transistors BC 183 Bc 188 pnp
    Text: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,


    OCR Scan     		Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 F21E transistors BC 848 ic 846 l transistors BC 183 Bc 188 pnp PDF

    BC848

    Abstract: BC847
    Text: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC857,


    OCR Scan     		BC857, Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 BC848 BC847 PDF

    BC8488

    Abstract: BC846 BC846A BC846B BC847A BC850 BC856 BC857 BC858 BC859
    Text: BC846.BC850 NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain 3  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type


    Original     		BC846. BC850 BC856, BC857, BC858 BC859, BC860 BC846A BC846B BC847A BC8488 BC846 BC846A BC846B BC847A BC850 BC856 BC857 BC858 BC859 PDF

    BC8488

    Abstract: BC846 BC846A BC846B BC847A BC850 BC856 BC857 BC858 BC859
    Text: BC846.BC850 NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain 3  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type


    Original     		BC846. BC850 BC856, BC857, BC858 BC859, BC860 BC846A BC846B BC847A BC8488 BC846 BC846A BC846B BC847A BC850 BC856 BC857 BC858 BC859 PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT CIRCUIT TD62706P-H TÍ1CUIDA I W M •I I TECHNICAL DATA SILICON MONOLITHIC 6ch HIGH-VOLTAGE SOURCE-CURRENT DRIVER The TD62706P-H is comprised of six source current Transistor Array. This driver is specifically designed for fluorescent display


    OCR Scan     		TD62706P-H TD62706P-H DIP16 -50mA DIP16-P-300A DIP16-P-3Q0A PDF