i3 processor
Abstract: A43L2632
Text: A43L2632 Preliminary 1M X 32 Bit X 4 Banks Synchronous DRAM Document Title 1M X 32 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue January 13, 2005 Preliminary January, 2005, Version 0.0 AMIC Technology, Corp.
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A43L2632
i3 processor
A43L2632
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Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC PRELIMINARY V4DJX132BLT/V4DJ132BLT 1M X 32 HIGH PERFORMANCE EDO/FPM MEMORY MODULE Features Description • ■ ■ ■ The V4DJX132BLT/V4DJ132BLT memory Module is organized as 1,097,152 x 32 bits in a 72lead single-in-line module. The 1M x 32 memory
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V4DJX132BLT/V4DJ132BLT
72lead
32-bit
V4DJX132BLT
V4DJ132BLT
72-lead
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WED9LAPC2B16P8BC
Abstract: WED9LAPC2C16V8BC
Text: WED9LAPC2C16V8BC White Electronic Designs 512K x 32 SSRAM / 1M x 64 SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT’S LUCTAPC640 ATM PORT CONTROLLER FEATURES DESCRIPTION The WED9LAPC2C16V8BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 1M x 64 Synchronous
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WED9LAPC2C16V8BC
LUCTAPC640
WED9LAPC2C16V8BC
WED9LAPC2B16P8BC,
5M-1994.
WED9LAPC2C16V8BI
WED9LAPC2B16P8BC
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Untitled
Abstract: No abstract text available
Text: UG31E321 4 6GSG 4M Bytes (1M x 32) DRAM 72Pin SODIMM based on 1M X 16 Features General Description The UG31E321(4)6GSG is a 1,048,576 bits by 32 SODIMM module.The UG31E321(4)6GSG is assembled using 2 pcs of 1M x 16 1K/4K refresh DRAMs in 42-pin SOJ package mounted on a 72 pin
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UG31E321
72Pin
42-pin
Re-Tek-295
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Untitled
Abstract: No abstract text available
Text: UG31C321 4 6GSG 4M Bytes (1M x 32) DRAM 72Pin SODIMM based on 1M X 16 Features General Description The UG31C321(4)6GSG is a 1,048,576 bits by 32 SODIMM module.The UG31C321(4)6GSG is assembled using 2 pcs of 1M x 16 1K/4K refresh DRAMs in 42-pin SOJ package mounted on a 72 pin
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UG31C321
72Pin
42-pin
72pin)
1000mil)
Re-Tek-360
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Untitled
Abstract: No abstract text available
Text: SL29041-15 T/G 4(V/R/S) 1M X 32 Bits 80-Pin Flash SIMM (3.3V Only) FEATURES GENERAL DESCRIPTION • • • • • • The SiliconTech SL29041-15(T/G)4(V/R/S) is a 1M x 32 bits flash memory module. This module consists of four 1M x 8 bits CMOS flash memory in 40-pin TSOP packages mounted on an
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SL29041-15
80-Pin
40-pin
150ns
A0-A19
DQ8-DQ15
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A2-A20
Abstract: No abstract text available
Text: Preliminary GS832018/32/36T-250/225/200/166/150/133 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Single Cycle Deselect SCD operation
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GS832018/32/36T-250/225/200/166/150/133
100-Pin
100-lead
A2-A20
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SL29040-90x
Abstract: A1267 AMD flash 80pin simm
Text: SL29040-90x 1M X 32 Bits Flash 80-Pin SIMM 5V Only FEATURES GENERAL DESCRIPTION • • • • • • • The SiliconTech SL29040-90x is a 1M x 32 bits flash Single Inline Memory Module (SIMM). The module consists of eight 512K x 8 bits CMOS flash memory in 32-pin TSOP packages mounted
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SL29040-90x
80-Pin
SL29040-90x
32-pin
Am29F040-90
DQ8-DQ15
DQ16-DQ23
DQ24-DQ31
A1267
AMD flash
80pin simm
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GI9332
Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
Text: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8
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MB83256
MB83512
MB831000
MB832000
MB834100
MB834000
MB834200
27C1024H
27C101A
27C301A
GI9332
mb831000
MB834000
23C2001
23C1001
23c1000
UPD23C1001
23c4001
HN62304
mb832000
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GS832036AGT-375I
Abstract: No abstract text available
Text: Preliminary GS832018/32/36AGT-400/375/333/250/200/150 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features cycles can be initiated with either ADSP or ADSC inputs. In
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GS832018/32/36AGT-400/375/333/250/200/150
100-Pin
100-lead
8320xxA
GS832036AGT-375I
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GS832132AGD-150I
Abstract: No abstract text available
Text: Preliminary GS832118/32/36AD-400/375/333/250/200/150 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 165-Bump BGA Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline
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GS832118/32/36AD-400/375/333/250/200/150
165-Bump
8321xxA
GS832132AGD-150I
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Boundary Scan JTAG Logic
Abstract: GS8321E32AGD-250
Text: GS8321E18/32/36AD-400/375/333/250/200/150 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 165-Bump BGA Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline
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GS8321E18/32/36AD-400/375/333/250/200/150
165-Bump
8321ExxA
Boundary Scan JTAG Logic
GS8321E32AGD-250
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GS832018AGT-150
Abstract: GS832036AGT-375I
Text: GS832018/32/36AGT-400/375/333/250/200/150 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline
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GS832018/32/36AGT-400/375/333/250/200/150
100-Pin
100-lead
8320xxA
GS832018AGT-150
GS832036AGT-375I
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Untitled
Abstract: No abstract text available
Text: Preliminary GS8320E18/32/36AGT-400/375/333/250/200/150 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline
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S8320E18/32/36AGT-400/375/333/250/200/150
100-Pin
100-lead
8320ExxA
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Untitled
Abstract: No abstract text available
Text: GS8320E18/32/36AGT-400/375/333/250/200/150 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline
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S8320E18/32/36AGT-400/375/333/250/200/150
100-Pin
100-lead
8320ExxA
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Untitled
Abstract: No abstract text available
Text: Preliminary GS8321E18/32/36AD-400/375/333/250/200/150 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 165-Bump BGA Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline
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GS8321E18/32/36AD-400/375/333/250/200/150
165-Bump
8321ExxA
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Untitled
Abstract: No abstract text available
Text: Preliminary GS8320E18/32/36AGT-400/375/333/250/200/150 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline
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S8320E18/32/36AGT-400/375/333/250/200/150
100-Pin
100-lead
8320ExxA
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Untitled
Abstract: No abstract text available
Text: Preliminary GS832018/32/36AGT-400/375/333/250/200/150 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline
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GS832018/32/36AGT-400/375/333/250/200/150
100-Pin
100-lead
8320xxA
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DQ27-DQ34
Abstract: UG32E321
Text: UG32E321 4 6GSG 8M Bytes (2M x 32) DRAM 72Pin SODIMM based on 1M X 16 Features General Description The UG32E321(4)6GSG is a 2,097,152 bits by 32 SODIMM module.The UG32E321(4)6GSG is assembled using 4 pcs of 1M x 16 1K/4K refresh DRAMs in 42-pin SOJ package mounted on a 72 pin
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UG32E321
72Pin
42-pin
Re-Tek-294
DQ27-DQ34
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Untitled
Abstract: No abstract text available
Text: 1M x 32 CMOS STATIC RAM MODULE PRELIMINARY IDT7MP4104 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabyte static RAM module The IDT7MP4104 is a 1M x 32 static RAM module con structed on an epoxy laminate FR-4 substrate using 8 1M x
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IDT7MP4104
IDT7MP4104
200mV
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DD660
Abstract: No abstract text available
Text: M OSEL VITEU C PRELIMINARY V1816J32 1M x 32 EDO MEMORY MODULE Features Description • ■ ■ ■ ■ ■ The V1816J32 memory module is organized as 1,097,152 x 32 bits in a 72-lead single-in-line module. The 2M x 32 memory module uses 4 Mosel-Vitelic 1M x 16 DRAMs. The x32 modules
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V1816J32
72-lead
cycles/16ms
b3S33
DD660
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jeida dram 88 pin
Abstract: No abstract text available
Text: STI321000C1 88-PIN CARDS 1M X 32 DRAM Card FEATURES GENERAL DESCRIPTION • The Simple Technology STI321000C1 is a 1M bit x 32 Dynamic RAM high density memory card. The Simple Technology STI321000C1 consist of eight CMOS 1M x 4 bit DRAMs in 20pin SOJ package. The circuit board is enclosed in a credit-card
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STI321000C1
88-PIN
110ns
130ns
150ns
20pin
STI321000C1-60
jeida dram 88 pin
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PM12C
Abstract: No abstract text available
Text: fax id: 20 10 CYM1821 16K x 32 Static RAM Module Features • High-density 512-Kbit SRAM module • 32-bit standard footprint supports densities from 16K x 32 through 1M x 32 • High-speed CMOS SRAMs constructed from eight 16K x 4 SRAM SOJ packages mount
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CYM1821
512-Kbit
32-bit
PM12C
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Untitled
Abstract: No abstract text available
Text: IDT7MP4120 1 M X 32 CMOS STATIC RAM MODULE D E S C R IP T IO N The IDT7MP4120 is a 1M x 32 Static RAM module constructed on an epoxy laminate FR-4 substrate using 8 1M x 4 Static RAMs in plastic packages. Availability of four chip select lines (one for each group of two
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IDT7MP4120
72-pin
7MP4120
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