DRAM 256kx4
Abstract: KM29N32000 KM29N040 dram 4mx4
Text: ICs for Communications Digital Answering Machine with Full Duplex Speakerphone SAM EC PSB 4860 Version 2.1 Delta Sheet 07.97 T4860-XV21-L1-7600 PSB 4860 Revision History: Current Version: 07.97 Previous Version: Edition 07.97 This edition was realized using the software system FrameMaker.
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T4860-XV21-L1-7600
DRAM 256kx4
KM29N32000
KM29N040
dram 4mx4
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D6305B
Abstract: D6455B D0000-29
Text: D6455A/B EASYTAD Chip for an all Digital Telephone Answering Device with Super Low Rate Coder and True FULL Duplex SpeakerPhone General Description The D6455A/B chip is a digital speech/signal processing subsystem that implements all functions of TRUESPEECH
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D6455A/B
D6455A/B
D6455A,
PO-1/96
D6305B
D6455B
D0000-29
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PMB 3330
Abstract: smd code book z1 4MX1 aram 1mx4 aram PMB 27251 MA10 MA11 MA12 MA13 MA15
Text: ICs for Communications Digital Answering Machine SAM PSB 2168 Version 3.1 Product Overview 09.97 DS 1 PSB 2168 Revision History: Current Version: 09.97 Previous Version: None Page in previous Version Page (in current Version) Subjects (major changes since last revision)
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MA0-MA11
MA0-MA11
P-MQFP-80
PMB 3330
smd code book z1
4MX1 aram
1mx4 aram
PMB 27251
MA10
MA11
MA12
MA13
MA15
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4MX1 aram
Abstract: smd diode S7 PMB 27251 block diagram of speech recognition dram memory 256kx4 DTMF detector 3.3v Voice Activity Detector MA10 MA11 MA12
Text: ICs for Communications Digital Answering Machine SAM PSB 2168 Version 3.1 Product Overview 03.98 DS 2 PSB 2168 Revision History: Current Version: 03.98 Previous Version: 09.97 Page Page in previous (in current Version Version) Subjects (major changes since last revision)
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MA0-MA11
P-MQFP-80
4MX1 aram
smd diode S7
PMB 27251
block diagram of speech recognition
dram memory 256kx4
DTMF detector 3.3v
Voice Activity Detector
MA10
MA11
MA12
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4MX1 aram
Abstract: psb 2186 sam audio Echo kb dect pmb MA10 MA11 MA12 MA13 MA15 block diagram of microcontroller based caller id
Text: ICs for Communications Digital Answering Machine with Full Duplex Speakerphone SAM EC PSB 4860 Version 3.1 Product Overview 09.97 DS 1 PSB 4860 Revision History: Current Version: 09.97 Previous Version: None Page in previous Version Page (in current Version)
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MA0-MA11
MA0-MA11
P-MQFP-80
4MX1 aram
psb 2186 sam
audio Echo kb
dect pmb
MA10
MA11
MA12
MA13
MA15
block diagram of microcontroller based caller id
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echo cancellation noise speech recognition
Abstract: code eprom smd atmel SMD diode s16 telephone microcontroller caller id MA10 MA11 MA12 MA13 MA15 PMB 27251
Text: ICs for Communications Digital Answering Machine with Full Duplex Speakerphone SAM EC PSB 4860 Version 3.1 Product Overview 01.98 DS 2 PSB 4860 Revision History: Current Version: 01.98 Previous Version: 09.97 Page Page in previous (in current Version Version)
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MA0-MA11
MA0-MA11
P-MQFP-80
echo cancellation noise speech recognition
code eprom smd atmel
SMD diode s16
telephone microcontroller caller id
MA10
MA11
MA12
MA13
MA15
PMB 27251
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SMD BJ ET
Abstract: L60 SMD IC 1mx4 aram
Text: SIEMENS 1Mx4-Bit Dynamic RAM Low Power 1Mx4-Bit Dynamic RAM HYB 514400BJ -60/-70/-80 HYB 514400BJL -60/-70/-80 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 ‘ C operating temperature • Fast access and cycle time RAS access time:
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514400BJ
514400BJL
514400B
L-60/-70/-80
514400BJ/BJL-60/-70/-80
r77777/,
SMD BJ ET
L60 SMD IC
1mx4 aram
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM64V4002B/BL, KM64V4002B/BLI Document Title 1Mx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark
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KM64V4002B/BL,
KM64V4002B/BLI
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VXXXX
Abstract: No abstract text available
Text: HAR 2 6 ' Order this document by MCM514402A/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MCM514402A 1Mx4 CMOS Dynamic RAM Static Column The MCM514402A is a 0.7^ CMOS high-speed, dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with
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MCM514402A/D
MCM514402A
MCM514402A
VXXXX
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Untitled
Abstract: No abstract text available
Text: High P erform ance 1MX4 CMOS DRAM H A S4C14405 Il IM X 4 C M 0 S EDO DRAM Preliminary information Features • 1024 refresh cydes, 16 ms refresh interva • Organization: 1,048,576 words x 4 bit • High speed - RAS-only o r CAi>-before-RAS refresh • Read-modify-write
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S4C14405
26/20-pin
AS4C14405-60JC
26/20-pin
0Q34HC
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A19T
Abstract: No abstract text available
Text: Prelim inary CMOS SRAM KM 64V4002B/BL, KM 64V4002B/BLI D o cu m e n t Title 1Mx4 Bit with OE High Speed Static RAM (3.3V Operating), Revolutionary Pin out. Operated at Com m ercial and Industrial Tem perature Range. R evision H istory Draft Data R em ark
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KM64V4002B/BL,
KM64V4002B/BLI
32-SOJ-400
A19T
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SRAM sheet samsung
Abstract: No abstract text available
Text: KM64BV4002 BiCMOS SRAM D o cu m e n t Title 1Mx4 Bit with OE High Speed Static RAM (3.3V Operating), Revolutionary Pin out. Operated at Com m ercial Tem perature Range. R evision H istory R em ark Rev No. H isto ry Rev. 0.0 Initial release w ith Design T arget.
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KM64BV4002
10/12/15ns
12/15/20ns
12/15/20ns
0/12nsn
32-SOJ-400
SRAM sheet samsung
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Untitled
Abstract: No abstract text available
Text: Prelim inary CMOS SRAM KM644002B, KM 644002BI D o cu m e n t Title 1Mx4 Bit with OE High Speed Static RAM (5V Operating), Revolutionary Pin out. Operated at Com m ercial and Industrial Tem perature Range. R evision H istory D raft Data R em ark R ev No.
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KM644002B,
KM644002BI
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Untitled
Abstract: No abstract text available
Text: IBM11D2480B IBM11E2480B 2M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Single-error-correct SEC high-speed ECC algorithm • Single 5.0V 0.25V Power Supply • All inputs & outputs are fully TTL & CMOS compatible
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IBM11D2480B
IBM11E2480B
72-Pin
130ns
0L14b
50H4174
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64G2
Abstract: AU 1024 AX4640
Text: IBM11D1360EA IBM11E1360EA 1M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 ÎRAC RA S A cce ss Tim e 60ns 70ns ICAC C A S Access Tim e 15ns 20ns Wi A cce ss T im e From Address 30ns 35ns I rc C ycle Tim e 110ns 130ns
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IBM11D1360EA
IBM11E1360EA
72-Pin
110ns
130ns
64G2987
MMDS36DSU-00
64G2
AU 1024
AX4640
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Untitled
Abstract: No abstract text available
Text: K M 4 4 C lOOODT CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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16Mx4,
512Kx8)
KM44C1000DT
GD341b7
KM44C1
G0341bÃ
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V1000D
Abstract: CA5B KM44V1000D C1000D
Text: KM44C1000DT ELECTRONICS CMOS DRAM 1M X 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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KM44C1000DT
KM44ClOOODT
V1000D
CA5B
KM44V1000D
C1000D
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 D 1 3 2 5 B IB M 1 1 D 2 3 2 5 B 1M/2M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-In-Une Memory Modules • Performance: -6 0 -7 0 ! t RAc ! RA S A ccess Tim e 60ns 70ns ; tcAc I C A S A ccess Tim e 15ns 18ns I aa ; Access Tim e From Address
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72-Pin
104ns
124ns
T00bl4b
D003b37
IBM11D2325B
IBM11D1325B
DDD3b30
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MM7322000
Abstract: No abstract text available
Text: ^ . GMM7322000CS/SG-60/70/80 L G S e m ic o n C o .,L td . Description The GMM7322000CS/SG is a 2M x 32 bits Dynamic RAM MODULE which is assembled 16 pieces of 1M x 4bit DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GMM7322000CS/SG is
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GMM7322000CS/SG-60/70/80
GMM7322000CS/SG
GMM7322000CS/SG
GMM7322000CS
GMM7322000CSon
MM7322000
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m7401
Abstract: m74010
Text: i r* im GMM7401000CS/SG-60/70/80 1,048,576 w o r d s x 40 b i t L G S e m ic o n C o ., L td . CMOS DYNAMIC RAM MODULE Description Features The GMM7401O0OCS/SG is an 1M x 40 bits Dynamic RAM MODULE which is assembled 10 pieces o f 1M x 4 bit DRAMs in 20/26 pin SOJ package on single side the
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GMM7401000CS/SG-60/70/80
GMM7401O0OCS/SG
GMM7401000CS/SG
GMM7401000CS/SG
GMM7401000CS
m7401
m74010
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Untitled
Abstract: No abstract text available
Text: fax id: 2053 CYM1861V33 :/ CYPRESS 2,048K X 32 3.3V Static RAM Module Features • H ig h -d en sity 3.3V 6 4 -m e g a b it S R A M m o d ule • 32-b it S tan d ard F o o tp rin t su p p o rts d e n s itie s from 16K x 32 th ro ug h 2M x 32 • H ig h-speed S R A M s
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CYM1861V33
72-pin
64-pin
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PMB 3330
Abstract: block diagram of answering machine PMB 27251 DECT siemens PSB uart
Text: SIEMENS ICs for Communications Digital Answering Machine with Full Duplex Speakerphone SAM EC PSB4860 Version 3.1 Product Overview 01.98 DS 2 PSB 4860 Revision History: Current Version: 01.98 Previous Version: 09.97 Page in previous Version Page (in current
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PSB4860
P-MQFP-80
PMB 3330
block diagram of answering machine
PMB 27251
DECT siemens
PSB uart
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PDF
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c1003C
Abstract: No abstract text available
Text: KM44C1003C CMOS DRAM «— 1 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6, -7 or -8 , power
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KM44C1003C
c1003C
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5v dram 88 pin card 1M x 32
Abstract: 64G1719
Text: IB M 1 1 J 1 3 2 0 B L 1M x 32 5.0V IC DRAM Card Features • Industry Standard 88Pin IC DRAM Card • Performance: -70 ÎRAC R Â S A cce ss Tim e 70ns tcAC C A S A cce ss Tim e 29ns tAA A cce ss T im e From A ddress 46ns tRC C ycle T im e 130ns tpc F ast Page M ode C ycle Tim e
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88Pin
130ns
128ms
IBM11J1320BL
indust6/94
64G1719
MMDI26DS
5v dram 88 pin card 1M x 32
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