diode IN 5397
Abstract: 1N 5392 DIODE diode in 5392 T3 marking 1N 4000 diode diode 1n5392 diode 1n5397 1N5392-T3 1N5392-TB 1N5399
Text: 1N5391 – 1N5399 WTE POWER SEMICONDUCTORS Pb 1.5A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-15, Molded Plastic
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1N5391
1N5399
DO-15,
MIL-STD-202,
DO-15
diode IN 5397
1N 5392 DIODE
diode in 5392
T3 marking
1N 4000 diode
diode 1n5392
diode 1n5397
1N5392-T3
1N5392-TB
1N5399
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diode 1n5397
Abstract: 1N5392
Text: 1N5391 – 1N5399 WTE POWER SEMICONDUCTORS Pb 1.5A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-15, Molded Plastic
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1N5391
1N5399
DO-15,
MIL-STD-202,
DO-15
diode 1n5397
1N5392
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Untitled
Abstract: No abstract text available
Text: 1N 4148, 1N 4150, 1N 4151, 1N 4448 Silicon Planar Diodes Silizium-Planar-Dioden 150.300 mA Ø 1.9 Repetitive peak reverse voltage Periodische Spitzensperrspannung 3.9 62.5 Nominal current Nennstrom Glass case Glasgehäuse 50…100 V DO-35 SOD-27 Weight approx.
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DO-35
OD-27
150/C)
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1N4148
Abstract: 4148
Text: 1N 4148, 1N 4150, 1N 4151, 1N 4448 Silicon Planar Diodes Silizium-Planar-Dioden Nominal current Nennstrom 150.300 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…100 V Glass case Glasgehäuse DO-35 SOD-27 Weight approx. Gewicht ca.
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DO-35
OD-27
150/C)
1N4148
4148
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5V1 85C
Abstract: bzx 86 c BZX 86c BZ 6V2 1N4189 BZX 24 85C 85C3V3 85c 3v3 85c 5V6 bz-86
Text: DO 41 CB 101 Types V Z T /l2 T * IV) nom 1N 4 7 6 3 A 1N 4764 A 91 1N4187 B 110 120 100 1N 4188 B 1N 4189 B rZT/»ZT* (n ) max >ZT ImA) 250 350 2,8 3000 0,25 0,09 5 69 10 2,5 2,3 2 0,09 0,10 5 5 76 84 9,4 450 3000 0,25 4000 0,25 4500 0,25 0,10 5 91 8,6 7,8
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1N4189
1N4190B
5V1 85C
bzx 86 c
BZX 86c
BZ 6V2
BZX 24 85C
85C3V3
85c 3v3
85c 5V6
bz-86
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P200H
Abstract: PH 1n 40 50 20800-3 ir 150h M300K F40H P56H hf80 1n 48 ph
Text: DIODES DE REDRESSEMENT HAUTE TENSION high voltage rectifier diodes V RWM vF V RRM TYPES 100 JUA min. V VR (V) 200 mA ME ME ME ME ME / tamb = 25°C 20 F 40 F 60 F 80 F 100 F 250 mA 2 0 0 /400 mA EV EV EW EW mA D 40 H D 60 H D 80 H D 150 H D 200 H L D 250 H L
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M300K
P200H
PH 1n 40 50
20800-3
ir 150h
M300K
F40H
P56H
hf80
1n 48 ph
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1N2919
Abstract: CB47 RECTIFIER 1RM150 EV12R CB334 M80K M30K Thomson-CSF diodes de redressement 1N2887 mk plastique
Text: high voltage rectifier diodes o diodes de redressement haute tension THOMSON-CSF Types / T a m il 250 itiA •o Vr r m mA (V) = 50°C M 15 K/1N2887 M 20 K/1N 2891 1N 2897 M 30 K/1N 2901 1N 2905 M 40 K/1 N 2911 1N 2915 M 50 K/1N 2919 1N2921 M 60 K/1 N 2923
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K/1N2887
K/1N2891
M30K/1N2901
M40K/1N2911
K/1N2919
1N2921
80K/05RM
CB-47/CB-48)
650mA
ICB-47/CB-48)
1N2919
CB47 RECTIFIER
1RM150
EV12R
CB334
M80K
M30K
Thomson-CSF diodes de redressement
1N2887
mk plastique
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Untitled
Abstract: No abstract text available
Text: RECTIFIER DIODES, Standard Recovery, Plastic Package ISI P a rt N um ber M axim um R ectified Current at T. Peak in ve rse Voltage I A m ps i f i l i Ptv (Veits) Average 1194001 50 1N 4002 100 4N 4003 200 1N 4004 400 75 1194000 600 1N 4006 800 i „ « (A m ps)
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OCR Scan
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DO-41
RL105
DO-15
RL252M
RL257M
L253M
RL254M
L251M
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M605
Abstract: 100-C IN3283 BAY25 me120
Text: DIODES DE REDRESSEMENT HAUTE TENSION , high voltage rectifier diodes 41 10 m A / ta m b = 25°C t vj = •f r m (mA) 125° C fi 'o (A) C„ = > > Vra @ 100 fiA min. (V) o “H > TYPES Ir vF = 'o *amb — ' 25°C (V) 2 pF ( 0 V) <É- W @ if Vr Vr *amb 100-C
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100-C
M605
IN3283
BAY25
me120
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IN3029B
Abstract: IN3036 4170B zener diodes 1N serie 1N4164 IN3037B 1N4171 IN3016B IN3048B IN3029
Text: DIODES DE RÉGULATION DE TENSION , zener diodes Ps TYPES 1w / 1N 4158 B 1 N 4159 B 1N 4160 B 1N 4161 B 1N 4162 B 1 N 4163 B 1N 4164 B 1N 4165B 1N 4166 B 1N 4167B 1N 4168 B 1N 4169 B 1N4170B 1N4171 B 1N 4172 B 1N 4173B 1N 4174 B 1N 4175B 1N4176B 1N 4177B 1N 4178B
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1N4159
1N4163
1N4164
1N4165B
1N416
IN3029B
IN3036
4170B
zener diodes 1N serie
IN3037B
1N4171
IN3016B
IN3048B
IN3029
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pa 3029 b
Abstract: b3436 1N3019B 1N3027 1N3026B 1N3041
Text: s 7 SGS-THOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MDÊ^OIILiKginSQIfülOtgi ZENER DIODES STANDARD ZENER DIODES Type rZT'IZT* V Z T 'IZ T * rZK 1 >ZK 'ZT* “ VZ •r ' v R VR •ZM V (mA) P ackage Tam b 25° C min nom max (ß) (V) 1W / Tamb 1N 3016 B 1N 3017 B
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1N3019B
pa 3029 b
b3436
1N3027
1N3026B
1N3041
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4742A
Abstract: 4735 zener zener 4733 4732A 4739A 4749A 4731A 1N4187
Text: o zener diodes diodes zener THOMSON-CSF Types Vzr/IZT* rZT/l2T* nom V max A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A B B B B B B B 3,3 3,6 3,9 4,3 4,7 5,1 5,6 6,2 6,8 7,5 8,2 9,1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39
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1N4739
Abstract: zener 4733 1N4189 4742A SGS-THOMSON ZENER DIODES
Text: n Z Z SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# M Q » [i[L [E g ? [M « S ZENER DIODES STANDARD ZENER DIODES Type 1 W VZT ' 'ZT* rZ T 'IZ T * nom max (V) (0) 'ZT* rZK 1 'ZK max (mA) (O) typ (10«/°C) 1 Tamb = 50°C Tj max = 200°C P 1N 4728 A 1N 4729 A
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zener IN 5232
Abstract: 2SA 5242 5234 IN5221B IN5221
Text: zener diodes diodes zener Typo« THOMSON-CSF VZT/'ZT* nom V 500 mW IN 5221 B 1N 5222 B 1N 5223 B 1N 5224 B 1N 5225 B 1N 5226 B 1N 5227 B 1N 5228 B 1N 5229 B 1N 5230 B 1N 5231 B 1N 5232 B 1N 5233 B 1N 5234 B 1N 5235 B 1N 5236 B 1N 5237 B 1N 5238 B 1N 5239 B
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DO-35
CB-102)
zener IN 5232
2SA 5242
5234
IN5221B
IN5221
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zener diodes 1N serie
Abstract: 957b IN981B bzx96 IN4370 1N4371 bzx 96 ZENER bzx 46 c 20 969B ZENER bzx 46 c
Text: zener diodes diodes zener Types v z t / iz t * nom V THOMSON-CSF 'ZT/IZT* >ZT max Ci) Im AI rZK / IZK max (0) (mA) 400 m W / Tam b = 50°C Tj m ax = 175°C 1N 4370 1N4371 1N 4372 1N 746 1N 747 1N 748 1N 749 1N 750 1N 751 1N 752 1N 753 1N 754 1N 755 1N 756
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1N4371
zener diodes 1N serie
957b
IN981B
bzx96
IN4370
bzx 96
ZENER bzx 46 c 20
969B
ZENER bzx 46 c
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tt 3043
Abstract: TT 3034 zener diodes 1N serie 1N3022
Text: zener diodes THOMSON-CSF diodes zener Types vzt m in 1w / / 'z t nom V »ZT/'ZT m ax 'Z T m ax «2) Im A ) m ax C2) 3,3 3,1 3,4 3,6 3,7 3,9 4,0 4,3 4,4 4,7 4,8 5,1 5,2 5,6 5,8 6,2 6.4 6,8 7,0 7,5 7,7 8,2 8,5 9,1 10 9,4 10,4 11 12 11,4 12,4 13 13,8 15 15,3
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E80F
Abstract: MINI-MELF DIODE RED CATHODE
Text: SCHOTTKY DIODES PACKAGING Quantity per rac. or box Buffix following standard part number Packing Leade DO 35 DO 41 53 mm e xlaj reel No standard execution 4000 3000 26 mm axial Am m opack box — B2 4000 3000 reel — AR 2 (cathode up) — AR 1 (cathode down)
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diode 4483
Abstract: 1N4471
Text: 1 N 4 4 6 0 thru 1N4496 and N 6 4 8 5 thru ^ 1 Micmemi Corp. / J SANTA ANA, CA For more information call: 714 979-8220 The diode experts SCOTTSDALE, AZ ☆JANS* 1.5 WATT GLASS ZENER DIODES FE A T U R E S • • • • • • • • M ic ro m in iatu re p ack age.
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1N4496
N6491
diode 4483
1N4471
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Diode BAY 46
Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j
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1N456
BAW21A
CB-26)
CB-127
Tamb100Â
Tamb125Â
Tamb60Â
CB-127
CB-127.
Diode BAY 46
1N 4000 diode
1N3069
BA224-220
BAV45
BAY41
Diode BAY 41
Diode BAY 80
BAX12
SFD49
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PDF
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zener IN 5232
Abstract: 5277A 1N52658
Text: C T SGS-THOMSON *7 # GENERAL PURPOSE & INDUSTRIAL m m ì& jè w w è s ZENER DIODES PREFERRED SERIES JEDEC SERIES Type STANDARD ZENER DIODES Vz t ' I z t * rZT 1 *2T* 'Z T * rZK 1 'Z K Ir ' V r “ VZ Vr Tam b 25 °C 500 mW / nom m ax V (O) Tgirij) — 75°C Tj max
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4493U
Abstract: 1N4471
Text: Square ended SMD 1N4464US thru 1N4496US Applications 1.5 watt Voidless Zeners Hard GlassTungsten MELF "A” Package For use in hostile environments such as military and aerospace. Used where performance, surge and small footprint are important. These zener diodes are ideal for
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1N4464US
1N4496US
MIL-S-19500/406.
4493U
1N4471
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IN3046
Abstract: 1N3016 1N3040 1N3029B 1N3042 1n3029
Text: f Z 7 SGSTHOMSON ^ 7# [ M » i L i O T ( « ( 5S 1 N 3 0 1 6 B -> 1N 3051 B ZENER DIODES • VOLTAGE RANGE : 6.8V TO 200V ■ WELDED, HERMETICALLY SEALED METAL CASE ■ PACKAGE ACCORDING TO NORMALIZATION CCTU : F61 AND JEDEC DO-13 DESCRIPTIO N 1W silicon Zener diodes.
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DO-13
IN3046
1N3016
1N3040
1N3029B
1N3042
1n3029
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PDF
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IN3016
Abstract: No abstract text available
Text: SbE D rz 7 • 7 CÌ2 CÌ237 0 0 m S 2 tï bfl? ■ S G T H S G S -T H O M S O N _I L I M « ! 1 N 3 0 1 6 B~>1N 3051 B S G S-TH0HS0N ZENER DIODES ■ VOLTAGE RANGE : 6.8V TO 200V ■ WELDED, HERMETICALLY SEALED METAL CASE ■ PACKAGE ACCORDING TO NORMALIZATION
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DO-13
alu47
IN3016
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N4460 thru 1N4496 and 1N6485 thru 1N6491 M¡erosemi Corp. j ' The dtOOe experts SCOTTSDALE, 4 / ☆JANS^ 1.5 WATT GLASS ZENER DIODES FEATURES • • • • • • • • M ic ro m in ia tu re packag e. H ig h p e rfo rm a n c e characteristics. S ta b le o p era tio n at te m p e ra tu re s to 2 0 0 ° C .
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1N4460
1N4496
1N6485
1N6491
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