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    1N 414 B Search Results

    1N 414 B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5414/BDA Rochester Electronics LLC Replacement for National Semiconductor part number M38510/15102BDA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    5414/BCA Rochester Electronics LLC Replacement for National Semiconductor part number M38510/15102BCA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    PS2841-4B-AX Renesas Electronics Corporation Ultra-small, 4-Channel, 12-pin, Ultra Shrink SOP Photocoupler, , / Visit Renesas Electronics Corporation
    PS2841-4B-F3-AX Renesas Electronics Corporation Ultra-small, 4-Channel, 12-pin, Ultra Shrink SOP Photocoupler Visit Renesas Electronics Corporation
    TAS5414BTPHDQ1 Texas Instruments 4-Channel Automotive Digital Amplifiers 64-HTQFP -40 to 105 Visit Texas Instruments Buy
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    1N 414 B Price and Stock

    Infineon Technologies AG BTS4141NHUMA1

    Power Switch ICs - Power Distribution Smart High Side MINI-PROFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BTS4141NHUMA1 42,543
    • 1 $2.47
    • 10 $1.63
    • 100 $1.44
    • 1000 $1.24
    • 10000 $1.15
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    Infineon Technologies AG BTS4141N

    Power Switch ICs - Power Distribution Smart High Side MINI-PROFET
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    Mouser Electronics BTS4141N 31,010
    • 1 $2.52
    • 10 $2.26
    • 100 $1.82
    • 1000 $1.24
    • 10000 $1.11
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    Rectron Semiconductor 1N4148-T

    Small Signal Switching Diodes DO-35gls,0.3A,75V,Switching
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    Mouser Electronics 1N4148-T 28,485
    • 1 $0.16
    • 10 $0.133
    • 100 $0.071
    • 1000 $0.031
    • 10000 $0.02
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    Rectron Semiconductor 1N4148-B

    Small Signal Switching Diodes 100V If/300mA BULK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1N4148-B 3,369
    • 1 $0.18
    • 10 $0.151
    • 100 $0.081
    • 1000 $0.035
    • 10000 $0.023
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    Wurth Elektronik 1541411NBA210

    Phototransistors WL-STTW SMT Phototransistor Top
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1541411NBA210 2,287
    • 1 $0.44
    • 10 $0.383
    • 100 $0.332
    • 1000 $0.264
    • 10000 $0.246
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    1N 414 B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N414B Dionics Diodes Scan PDF

    1N 414 B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1989963 CENTRAL SEMICONDUCTOR TE 92D 0 0 414 ]>E|nflnt3 DGDDMm eswfie&fi I. D 'f- 0 -o 7 5 " e@Ep. Central 1N771, A 1N772, A ssmiœndustor Corp. Central Semiconductor Corp. Central Semiconductor Corp. 1N 77 3, A . 1N77^t* A 1N775 GERMANIUM DIODE JEDEC D0-7 CASE


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    PDF 1N771, 1N772, 1N775 1N771 1N771 10mW/10Â 1N771A 1N772 1N772A 1N773

    1.5 KE 130 CA

    Abstract: 1.5KE150CP 180ca ke 400 ca 4.5 ke 160 p zt 213 1N5641 ke160p
    Text: Æ 7 SGS-THOMSON Ä7# «03 [I[Li §ïrô»[](gS GENERAL PURPOSE & INDUSTRIAL PROTECTION TRANSIENT VOLTAGE SUPPRESSORS «TRANSIL» Type 'RM @ VRM max @ V(BR * (V) !r V(CL) @ Ipp «T max max 1 ms expo Bidirec­ tional Unidirec­ tional 1.5 (V) min nom max kW I 1 ms expo.


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    PDF KE130P 1N5641 1.5 KE 130 CA 1.5KE150CP 180ca ke 400 ca 4.5 ke 160 p zt 213 1N5641 ke160p

    P6KE400cP

    Abstract: IN6105 P6KE440P IN6116A CB431 U1680 P6KE280CP 180C P6KE160CA P6KE170CP
    Text: TRANSI L T R A N S IE N T V O L T A G E S U P P R E S S O R S " T R A N S IL " c Type* •rm í V r m B id irec­ tional U n id irec­ tional 600 W 1 ms expo. 0 P6KE 160P P6KE 160A 0 P6 K E 1 7 0 P P6KE 170A O P6KS180P P6KB 180A 0 P6KE 200P P6KE 200A P6KE 220P


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    PDF 160CP P6KE160CA P6KE170P P6KE170CP OP6KE180P 180CP P6KE180A P6KE180CA P6KE400cP IN6105 P6KE440P IN6116A CB431 U1680 P6KE280CP 180C

    BAV54-30

    Abstract: 1N4148F BAV54-70 35P4 BAV54 1n4152f 4148f BAY68 BAV54-100 BAW 43
    Text: Silicon signal diodes * High speed switching Diodes de signa! au silicium Type - Case V B oitier V *0 Im A) v(Vp) / / max max max r V rm T a m b 2 5 °C Commutation rapide ' «F (m A ) IR ,/ V r ( n A ) / (V ) 'R / v R <mA ) / (V ) C t rr if D R S 75 tp F)


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    PDF Tamb25Â Tamb150Â ESM523 BAV54-30 1N4148F BAV54-70 35P4 BAV54 1n4152f 4148f BAY68 BAV54-100 BAW 43

    6v8a

    Abstract: BZW07-27 diode P6KE 5KE400A 6276A diode PFZ 15A KE 170A BZW06-102 BZW06-105 BZW06-105B
    Text: transient voltage suppressors «TRANSIL» '«!> THOMSON-CSF diodes de protection «TRANSIL» Types Ir M@Vr M Unidirec­ tional 600 W N N N N N N N N N N N N N N N N N N N N N N N Bidirec­ tional / BZW06-97V2 BZW06-102 BZW06-105 BZW06-111 BZW06-121 BZW06-128


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    PDF BZW06-97V2 BZW06-97V2B BZW06-102 8ZW06-102B BZW06-105 BZW06-105B BZW06-111 BZW06-111B BZW06-121 BZW06-121B 6v8a BZW07-27 diode P6KE 5KE400A 6276A diode PFZ 15A KE 170A

    5011N

    Abstract: IC la 4148 1N44 wm9 05
    Text: TY P ES IN 4148 WM9 1N4446 THRU 1N4449 SILICON SWITCHING DIODES B U L L E T IN N O . D L S 7 3 9 2 6 9 , O C T O B E R 1 9 6 6 - R E V IS E D M A R C H 197 3 FA ST SWITCHING DIODES Rugged Double-Plug Construction • Electrical Equivalents: 1N4148 . . . 1N914 . . . 1N4531


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    PDF 1N4446 1N4449 1N4148 1N914 1N4531 1N4149 1N916 1N4446 1N914A 1N4447 5011N IC la 4148 1N44 wm9 05

    DO-213AB footprint

    Abstract: LL4739A BKC Semiconductors LL4735A
    Text: MELF-SMD 1 Watt LL4729A ILL4729A Zener Diodes thru LL4764A Use Advantages Used where low cost and space are important. Cost effective replacement for plastic SMB zener diodes. Occupies the same footprint as SMB, no PC board rework. LL-41 MELF vs. SMB - savings of up to 50% are possible.


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    PDF LL4729A ILL4729A LL4764A LL-41 DO-213AB) DO-41 DO-213AB footprint LL4739A BKC Semiconductors LL4735A

    IN4733A

    Abstract: in4756a IN4746A IN4749A IN4733 1N4738A ITT 1N4742A JEDEC in 4742A IN4734A IN4730A
    Text: 1N 4728A thru 1N 4764A P L A S T IC Microsemi Corp. SILICON 1 WATT ZEN ER DIODES FEATURES • 3.3 THRU 100 VOLT ZENER VOLTAGE RANGE • HIGH SURGE CURRENT RATING 0.107 , 2 718 'M A X IM U M R A T IN G S Junction and Storage Temperature: -65°C to +200°C DC Power Dissipation: 1 Watt


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    PDF 1N4728A 1N4764A 10mW/Â IN4733A in4756a IN4746A IN4749A IN4733 1N4738A ITT 1N4742A JEDEC in 4742A IN4734A IN4730A

    in 4749A

    Abstract: No abstract text available
    Text: ZENER DIODES, GLASS PACKAGE, GENERAL PURPOSE 1 W a ft JEDEC Part Number Nominal Maximum Zaire r Zener Zerter Voltage Test Impedance Current at Maximum Knee Impedance Maximum Reverse Currant at V 2 S»C Maximum: Maximum Zener i l i i i i i ! Package Current


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    PDF 144791A in 4749A

    T 4148

    Abstract: n4148 N 4148 Diode N4148 diode 4149 1N4148 1n 4148 diode 4446 T03B 95288
    Text: A E G CORP 17E D TTSUHFIUMìSIIIiO electronic CtealcveTechna'ogies o a a m a t a o c n a a i 5 • 1 N 4148 - 1 N 4 1 4 9 - 1 N 4446 1 |M 4447 • 1 N 4 44 8 -1 N 4449 Silicon Epitaxial Planar Diodes A pplication s: Extreme fast switches Features: • •


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    PDF 002T42b N4148 DIN41 -T-03 2c142b T 4148 N 4148 Diode N4148 diode 4149 1N4148 1n 4148 diode 4446 T03B 95288

    IN753

    Abstract: IN751 IN756 1N4335 IN4372 IN759 MICROSEMI 1N746A JANTX IN750 ln741 IN747
    Text: 1 1 .0 12.0 13.0 14.0 15.0 17.0 19.0 * rs o co i n cm H O O O O O O O O o o o CM CMCMcrj «O Ps 00 oi o cm co in io oo o cm^ rs 30.0 33.0 36.0 — Diode types presently available from Microsemi Corporation are shown in bold type. 8 .0 10.0 29.0 20% 3 7 .0


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    PDF 1N4291 1N4292 1N4293 1N3CI12 1N3CI14 1N3015 1N4295Â 400mw 1N4296Â DO-13 IN753 IN751 IN756 1N4335 IN4372 IN759 MICROSEMI 1N746A JANTX IN750 ln741 IN747

    Untitled

    Abstract: No abstract text available
    Text: DL4728 thru DL4764 SILIC O N PLAN AR PO W ER Z E N E R DIODES Cathode Mark fo r use in s ta b ilizin g and clipp ing circu its w ith high pow er rating. S tan da rd Z e n e r vo lta g e to e ra n ce is 610% . Add 0 2 . 55 0 2 . 35 suffix "A " fo r 65% to le ra n ce . O th er to le ra n ce s a va ilab le


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    PDF DL4728 DL4764 DO-41 ZM4728.

    4728a

    Abstract: N4749A
    Text: N N D 1 I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . 4728 thru 1 1 WATT HERMETICALLY SEALED GLASS SILICON ZENER DIODES 4764 MAXIMUM RATINGS O pe rating T e m pe ratu re: S to ra g e T e m p e ra tu re : DC Pow er D issipa tion: P ow er D erating:


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    PDF 1N4728 1N4764D DD375 4728a N4749A

    Untitled

    Abstract: No abstract text available
    Text: r 16 15 M 12. 2 2 -WAY FEMALE HOUSING 22-poliges Buchsengehoeuse O P E L •PART -N O . ZF W22-I, FCI -NO II 1 2 9 10 8 13-WAY FEMALE HOUSING: CAVITY-NO. 14 TO 22 CLOSED I’BLIND C A V I T I E S ’! I 3 -p o I •ges B u c h s e n g eh o e u s e : K o m m e r -N r . 14 bi s 22 geschlossen ’B I i n d k o m m e m ’I


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    PDF 22-poliges W22-I, 13-WAY ZFW13-3. ZFW22-I, ZFW22I 5V51E0

    Untitled

    Abstract: No abstract text available
    Text: 1N4728 I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . thru 1N4 7 6 4 D 1 W ATT HERM ETICALLY SEALED G LASS SILIC O N ZEN ER DIODES MAXIMUM RATINGS * O p e ra tin g T e m perature: -6 5 ° C to + 2 0 0 °C S to ra g e T e m p e ra tu re : -6 5 ° C to + 2 0 0 °C


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    PDF 1N4728 1N4729A 1N4730A 1N4731A

    DIAGRAM IC AN7168

    Abstract: No abstract text available
    Text: AN7168 AN7168 Dual 5.7W Audio Power Amplifier • Description T h e A N 7168 is a m onolithic integrated circuit designed for d u a l 5 .7 W audio p o w e r am p lifier. S te re o o p e ra tio n is p ossible due to the 2 built-in am plifiers and to g eth er w ith


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    PDF AN7168 100cm2 7147N/49 T32fl52 DIAGRAM IC AN7168

    Untitled

    Abstract: No abstract text available
    Text: 6 3 6 7 2 5 5 M O T O R O L A SC D I O D E S / O P T O Tt »F|b3b7ESS _ r n - n _ 1N935,A,B MOTOROLA thru S E M IC O N D U C T O R TECHNICAL DATA i - □ 0 7 7 cn 7 1N939,A,B s | l) a ( a S h e e t 5; i TEMPERATURECOMPENSATED SILICON ZENER


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    PDF 1N935 1N939

    Untitled

    Abstract: No abstract text available
    Text: DO-41 glass 1 Watt Zener Diodes 1 N 4729A thru 1N 4764A Use Advantages Ideal for use as low cost, general purpose regulators and protection devices. Used in hostile environments where long term reliability is important. Competitive replacement for plastic DO-41 zener diodes.


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    PDF DO-41 1N4729A 1N4764A DDG0712 117TTfl3

    Untitled

    Abstract: No abstract text available
    Text: 20 _ 1.132 _ [2 8.75] NOTES: _ 0566 _ [1458] nn n 1. PRESS FIT LEGS 0.120- LONG0.062 [1.57] MINIMUM PCB THICKNESS FOR SINGLE SIDED USE. 0.118 [3.00] MINIMUM PCB THICKNESS FOR BELLY TO BELLY USE. o 2. MATERIAL: COPPER ALLOY PLATING: NONE o x3 SEE NOTE 4 e


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    PDF I-HP-2774 TS-74722-0001. 5IM0N50 SD-74722-001

    DO-41

    Abstract: No abstract text available
    Text: ADVANI OERLIKON/ SEMICOND 3bE D 02blb4fl OOOOODÖ b D S E L I T -O l-O l J SILICON DIODES S E M IC O N D U C T O R S e One-watt silicon zener diodes Vz TYPE /IN /IN ✓IN /IN /IN /IN ✓ IN ''IN ✓IN V4N ,1N /IN /IN /IN ✓ IN / IN ✓ IN ' IN /IN / IN


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    PDF 02blb4fl 6C325P O-105 O-106 Ot37Q 100TP. DO-41

    A/A/78M05 RN

    Abstract: No abstract text available
    Text: 3 -TER M IN A L POSITIVE VOLTAG E REGULATOR NJM78M00 Th e NJM78M00 series o f 3-Terminal M edium Current Positive V olta g e Regfulators is constructed using the N ew JR C Planar epitaxial process. These regulators em ploy internal current-limiting, thermal-shutdown and safe-area compensation


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    PDF NJM78M00 NJM78M00 NJM78M24 NJM78M12 NJM78M05 NJM78MOO NJM78M05 100mA, 350tnA 500niA A/A/78M05 RN

    EM 328

    Abstract: 1N5149A
    Text: tV J A N S tV 1N6103-1N6137 1N6139-1N6173 1N6103A-1N6137A 1N6139A-1N6173A Microsemi Corp. $T+ \}>fj'otfvc*oeri\ SANTA A N A , CA For mure inform ation call' 7M FEATURES • HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR HOST CRITICAL CIRCUITS. • TRIPLE LAYER PASSIVATION.


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    PDF 1N6103-1N6137 1N6139-1N6173 1N6103A-1N6137A 1N6139A-1N6173A MIL-S-1950D/516. 15Q0W 1N6103-1N613 1N6139-1N6173, 1N6103A-1N6137A, 139A-1N6173A EM 328 1N5149A

    LM 344 H

    Abstract: No abstract text available
    Text: OUTLINES OUTLINE 101 OUTLINE 102 .065 OUTLINE 103 OUTLINE 104 PULSAR MICROWAVE CORPORATION 48 INDUSTRIAL WEST - CLIFTON, NEW JERSEY 07012 PAGE 72 PHONE 201 779-6262 - FAX (201) 779-2727 PULSAR MICROWAVE CORPORATION 48 INDUSTRIAL WEST - CLIFTON, NEW JERSEY 07012


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    PDF

    332 6V8

    Abstract: 237 6V8 BZW07-27 BZW06-154 bzw06 BZW06-342 BZW04-188 BZW04-188B BZW04-202 BZW04-202B
    Text: f\ transient voltage suppressor «TRANSIL» utilisations utilisations des diodes de protection «TRANSIL» t h o m s o n -c s f Recom m ended u tilis a tio n s Utilisations recommandées Types General purpose Usage général N e tw o rk p ro te ctio n Protection pour


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    PDF BZW04-5V5 BZW04-188 BZW04-202 BZW04-376 BZW04-5V5B BZW04-188B BZW04-202B BZW04-376B BZW06-5V5 BZW06-188 332 6V8 237 6V8 BZW07-27 BZW06-154 bzw06 BZW06-342 BZW04-188 BZW04-188B BZW04-202 BZW04-202B