C456A
Abstract: FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A FAIRCHILD FDLL
Text: 1N/FDLL 456/A / 457/A / 458/A / 459/A 1N/FDLL 456/A - 1N/FDLL 459/A COLOR BAND MARKING DEVICE FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A FDLL459 FDLL459A LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL
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456/A
457/A
458/A
459/A
LL-34
DO-35
FDLL456
FDLL456A
C456A
FDLL456
FDLL456A
FDLL457
FDLL457A
FDLL458
FDLL458A
FAIRCHILD FDLL
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transistor c 458
Abstract: 1N 457 equivalent RED Color band DIODES 65 diode 1N FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A
Text: 1N/FDLL 456/A / 457/A / 458/A / 459/A Discrete POWER & Signal Technologies N 1N/FDLL 456/A - 1N/FDLL 459/A COLOR BAND MARKING DEVICE LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL DO-35 1ST BAND 2ND BAND
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456/A
457/A
458/A
459/A
LL-34
DO-35
FDLL456
FDLL456A
transistor c 458
1N 457 equivalent
RED Color band DIODES
65 diode 1N
FDLL456
FDLL456A
FDLL457
FDLL457A
FDLL458
FDLL458A
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Darlington Amplifier Transistors z Pb-Free Package is Available. LMBTA13LT1G LMBTA14LT1G ORDERING INFORMATION Device Marking Shipping LMBTA13LT1G 1M LMBTA14LT1G LMBTA13LT3G 1N 3000/Tape & Reel 3000/Tape & Reel 1M LMBTA14LT3G 1N 10000/Tape & Reel
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LMBTA13LT1G
LMBTA14LT1G
LMBTA13LT3G
3000/Tape
LMBTA14LT3G
10000/Tape
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diode st 4148
Abstract: ST 4148 diode 4148 FDLL4148 FDLL4448 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Discrete POWER & Signal Technologies N 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL DO-35 FDLL914
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914/A/B
916/A/B
LL-34
DO-35
FDLL914
FDLL914A
FDLL914B
FDLL916
diode st 4148
ST 4148
diode 4148
FDLL4148
FDLL4448
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
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IN5552
Abstract: lN555 N5550 1N5550 1N5551 1N5553 1N5554 1N5555 1N5556 1N5557
Text: PIV lo 25°C Volts Amps VF IR Volts /iA 1.0 1.0 1.0 1.0 1.0 1.0 Type No. 1N 5550 1N 5551 1N 5552 1N 5553 1N 5554 Zener Type Ho. IN 5 5 5 5 1N 5556 1N 5557 1N 5558 1N 5559 IN 5 5 6 0 1N 5561 1N 5562 1N 5563 1N 5564 200 400 600 800 1000 5 5 °C 5.0 5.0 5.0
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1N5550
1N5551
IN5552
1N5553
1N5554
1N5555
1N5556
1N5557'
1N5558
DO-13
lN555
N5550
1N5557
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SD5171
Abstract: IN5807 1N6811 DO-203AB Package 1N580a 1N5420 1N5415 1N5416 1N5417 1N5418
Text: OPTEK TECHNOLOGY INC 4ÖE D • L^TflSflO D0G1427 TT1 ■ OTK FAST RECOVERY RECTIFIERS 1N 5415-1N 5420; 1N 5615-1N 5623; T 0 3-15 1N 5802-1N 5811 Fast Recovery Rectifiers This series of high speed rectifiers are constructed using Optek's "double-slug" technique, a voidless monolithic construction which is
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D0G1427
1N5415-1N5420;
1N5615-1N5623;
T03-15
1N5802-1N5811
SD5171161
DO-Z03AB
IN6095
IN6097
IN6098
SD5171
IN5807
1N6811
DO-203AB Package
1N580a
1N5420
1N5415
1N5416
1N5417
1N5418
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lN555
Abstract: 1N5550 1N5551 1N5553 1N5554 1N5555 1N5556 1N5557 1N5558 1N5559
Text: Type No. 1N 5550 1N 5551 1 N 55 5 2 1N 5553 1N 5554 Zener Type Ho. PIV lo 25°C Volts Amps 200 400 600 800 1000 5 5 °C 5.0 5.0 5.0 5.0 5.0 Zener Voltage at IZT @ mA Volts IN 5555 1N5556 1N5557 1N5558 1N 5559 IN 5560 1N 5561 33.0 43.7 54.0 191.0 6.8 7.5
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1N5550
1N5551
IN5552
1N5553
1N5554
1N5555
1N5556
1N5557'
1N5558
DO-13
lN555
1N5557
1N5559
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1198A
Abstract: 1196-A RN820
Text: Gl 1N 248 B -» 1N 250 B 1N 1195 A -> 1N 1198 A RN 820/RN 1120 SGS-THOMSON tUEOTlEiMOSS S G S-THOnSON RECTIFIER DIODES • STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY . LOW FORWARD VOLTAGE DROP ABSOLUTE RATINGS limiting values Value Unit Average Forward Current*
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820/RN
250cm.
310cm
1198A
1196-A
RN820
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PDF
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SMD 1N60
Abstract: SMD 1N60 diode 6072a 1N56 1N60 diode SMD 6072A TUBE 1N6072 diode 1n60 sod6 package 1N60 MOS
Text: rz j S G S -T H O M S O N ^ 7£ 1N 5634A /1N 5665A 1N 6040A /1N 6072A TRANSIL FEATURES • PEAK PULSE POWER= 1500 W @ 1ms. ■ BREAKDOWN VOLTAGE RANGE : From 11V to 200 V. ■ UNI AND BIDIRECTIONAL TYPES. ■ LOW CLAMPING FACTOR. ■ FAST RESPONSE TIME: Tclamping : 1ps 0 V to VBR .
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CB472.
CB473.
DIL20
T0220AB
7TBT237
SMD 1N60
SMD 1N60 diode
6072a
1N56
1N60 diode SMD
6072A TUBE
1N6072
diode 1n60
sod6 package
1N60 MOS
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PDF
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1N1183
Abstract: 1N3768
Text: SCS-THOMSON 1N 1183/84/1N 1186 —> 90 1N 3766/1N 3768 [» [H i [i[L Œ O T 2 *S RECTIFIER DIODES • STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY ■ LOW FORW ARD VOLTAGE DROP A B S O L U T E R A T IN G S (limiting values P aram e ter Value Unit
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OCR Scan
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1183/84/1N
3766/1N
140-C
90/1N
3766/1N3768
250cm.
310cm.
1N1183
1N3768
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PDF
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Untitled
Abstract: No abstract text available
Text: 5 bE D • 7=12=1237 G G 4 1 7 7 b SCS-THOMSON [M O ^ a m tK g lM K S 2bS ■ SGTH 1N 1183/84/1N 1186 -> 90 1N 3766/1N 3768 G S-THOMSON s T - O h H RECTIFIER DIODES ■ STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY . LOW FORWARD VOLTAGE DROP ABSOLUTE RATINGS limiting values
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1183/84/1N
3766/1N
7T2T237
3/84/1N
N3768_
250cm.
310cm
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PDF
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IN750
Abstract: 1N239 1N47A IN4858 1N236 1N701 649-1 diode 1N665 1N236 diode DIODE 1N649
Text: Zener Type No. Zener Volt age 3t 1ZT @ mA Volts Zener Voltage Tolerance Max. Zener Impedance @ Ur Ohms S u ffix A 0 .2 0 Device Package 150m w Case A 8 1 N 2 2 5 ÎD 1N 2 2 6 il ) 1N 2 27 (1 ) 7 .5 • 1 0 .0 9 .0 • 12 .0 1 1 .0 • 14 .5 1N 228H ) 1N 229
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OCR Scan
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1N2250)
1N226I1)
1N227
150mw
1N228C)
1N229C)
1N2301D
1N231C)
1N2320
1N233
IN750
1N239
1N47A
IN4858
1N236
1N701
649-1 diode
1N665
1N236 diode
DIODE 1N649
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PDF
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1N4475
Abstract: 1N4465 1N6490 1N4474 ic 4496 1N4477 1N4460 1N4471 1N4469 1N4467
Text: 1N 4460 thru 1N 4496 and 1N 6485 thru 1N6491 s c o u s i m i . t. a / . ☆JA N S* FEATURES • • • • • • • • 1.5 WATT GLASS ZENER DIODES M icrom iniature package. High perform ance characteristics. S table operation at tem peratures to 200°C.
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1N6491
MIL-S-19500/406.
D0Q37
1N4460
1N6485
1N6491
1N4475
1N4465
1N6490
1N4474
ic 4496
1N4477
1N4471
1N4469
1N4467
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PDF
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551-3209F
Abstract: I-409 5510209F 551-0209F 551-3009F 551-0309F 1MA551
Text: O P E R A T 1NG PART N U M B E R F ORWARD VOLTAGE/CURRENT M 1N TYP Drwr Der C H A R A C T E R 1S T I C S T i c n u i PEAK AT T* = 25 °C W A V E L E N G T H n m LUMI NOUS M 1N TYP 5.6 16.0 If M 1N @ 1o m a 585 2.2 6.3 V M 1N @ 10/*A 650 3.6 10 If : If z
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OCR Scan
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551-0209F
551-0309F
551-0409F
551-0509F
100MA
551-0609F
-0709F
551-0809F
-XX09F
551-3209F
I-409
5510209F
551-0209F
551-3009F
551-0309F
1MA551
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PDF
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sol 4011 be
Abstract: 1N4866 in485b 1N483B 1N485B 1N486B 1N5194 1N5195 1N5196
Text: MIL SPECS ICJDDD01ES QDDDÛ31 5 T T n c h -p o u n d T MIL-S-19500/118D AMENDMENT 1 28 April 1989 MILITARY SPECIFICATION S E M I C O N D U C T O R DE V I CE , DI OD E, S I L I C O N T Y PE S 1N 483B, 1 N 4 8 5 B , 1N 486B, 1N 5194, 1N 5195, 1 N 51 96 JAN, J A N T X , J A NT X V , AND J A N S
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OCR Scan
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MIL-S-19500/118D
1N483B,
1N485B,
1N486B,
1N5194,
1N5195,
1N5196
MIL-S-19500/llfiD
sol 4011 be
1N4866
in485b
1N483B
1N485B
1N486B
1N5194
1N5195
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PDF
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IN3155
Abstract: IN3157 BL-5B IN3154 1n3156 1N3154 015G 12123 N3157 3155
Text: SbE ]> • 7 ^ 2 3 7 0041532 «S6TH s 6 S-TH4MS0N SCS-THOMSON !QJOT@«S 171 T- , h ° ^ 1N 3154,A-> 1N 3157,A TEMPERATURE COMPENSATED ZENER DIODES ■ SEMICONDUCTOR MATERIAL : SILICON . TECHNOLOGY : LOCAL EPITAXY + GUARD RING ABSOLUTE RATINGS limiting values
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OCR Scan
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PDF
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diode t 4148
Abstract: TI 4148 FDLL916B 914/A/B FDLL4448 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Discrete POWER & Signal Technologies National Semiconductor" 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE F D L L 91 4 F D LL914A FD LL914B F D L L 91 6 F D LL916A FD LL916B FD LL4148 FD LL4448 1ST BAND
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OCR Scan
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914/A/B
916/A/B
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
FDLL916B
FDLL4148
FDLL4448
diode t 4148
TI 4148
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N/FDLL 456/A / 457/A / 458/A / 459/A Discrete POWER & Signal Technologies N at ion al Semiconductor 1N/FDLL 456/A -1 N/FDLL 459/A COLOR BAND MARKING DEVICE FD LL456 FD LL456A FD LL457 FD LL457A FD LL458 FD LL458A FD LL459 FD LL459A LL-34 THE PLACEMENT OF THE EXPANSION GAP
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OCR Scan
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456/A
457/A
458/A
459/A
LL-34
DO-35
LL456
LL456A
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PDF
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1N54080
Abstract: No abstract text available
Text: 1N 5400 thru 1N 5408 MicmemiCorp. ’ The diod e experts / SANTA ANA, CA SCOTTSDALE, A Z For more information call: 602 941-6300 3A PLASTIC SILICON RECTIFIERS FEA TU RES • • • • • • Low cost. High current capability. Low leakage. Low forward voltage.
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OCR Scan
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DO-27
Q-Q48
D0-201AD)
1N54080
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N 42 45 thru 1N 42 49 SANTA ANA, CA SCOTTSDALE, A Z For more information calí: 7 4) 979-8220 MILITARY RECTIFIERS FEATURES • MICROMINIATURE PACKAGE • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE • TRIPLE LAYER PASSIVATION • METALLURGICALLY RONDED • STANDARD BECOVEBY
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MIL-S-I9500/286
IL-STD-750
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PDF
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Untitled
Abstract: No abstract text available
Text: • b b 53 tm □ □ 2b ac}7 13T APX N AMER PHILIPS/DISCRETE 1N 4001ID TO 1N 4007ID bTE D J V _ SILICON DIFFUSED RECTIRER DIODES This data sheet contains a range of silicon rectifier diodes for general purpose use. QUICK REFERENCE DATA
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OCR Scan
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4001ID
4007ID
4002ID
4003ID
4004ID
4005ID
4006ID
1N4001ID
N4001ID
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 ,0 0 0 V - 5 ,0 0 0 V R e c tifie rs 1N6521U 0.15 A - 0.50 A Forward Current 70 ns Recovery Time 1N 6523U 1N 6525U SURFACE MOUNT HERMETICALLY SEALED ~ ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number] Working Reverse Voltage Average Rectified Current
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1N6521U
6523U
6525U
50VDC
1N6523U
1N6525U
1N6521U
1N6523U
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PDF
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Untitled
Abstract: No abstract text available
Text: [ZT SGS-THOMSON ^ 7 # . ra«mi@TO » g® 1N 3879 -» 1N 3883 FAST RECOVERY RECTIFIER DIODES • FAST RECOVERY TIME ■ LOW FORWARD RECOVERY TIME APPLICATIONS ■ DC AND AC MOTOR CONTROL ■ SWITCH MODE POWER SUPPLY ■ HIGH FREQUENCY CHOPPERS ■ HIGH FREQUENCY RECTIFIERS
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OCR Scan
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00bS227
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PDF
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Untitled
Abstract: No abstract text available
Text: Micmsemi • m m Chatsvrorth, CA m 1N 5391G P thru 1N 5399G P 9261 Owensmouth Ave, Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • • • • 1.5 Amp Glass Passivated Rectifier 50 -1000 Volts Low Current Leakage Low Forward Voltage
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5391G
5399G
DO-15
1000e
1N5391GP
1N5399GP
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PDF
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